JPH01271759A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPH01271759A JPH01271759A JP10023388A JP10023388A JPH01271759A JP H01271759 A JPH01271759 A JP H01271759A JP 10023388 A JP10023388 A JP 10023388A JP 10023388 A JP10023388 A JP 10023388A JP H01271759 A JPH01271759 A JP H01271759A
- Authority
- JP
- Japan
- Prior art keywords
- sol
- transport layer
- charge transport
- oxide
- electrophotographic photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003980 solgel method Methods 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 9
- -1 silane compound Chemical class 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子写真感光体、特に金属酸化物を電荷輸送
層の主成分として含む電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electrophotographic photoreceptor, particularly an electrophotographic photoreceptor containing a metal oxide as a main component of a charge transport layer.
描平の坊術
近年、感光層として、光照射により電荷キャリアを発生
させる電荷発生層と、電荷発生層で生じた電荷キャリア
を効率良く注入でき、かつ効率的に移動可能な電荷輸送
層とに分離した、いわゆる機能分離型感光層を有する電
子写真感光体が優れたものとして提案されている。この
様な機能分離型電子写真感光体にあける電荷輸送層とし
ては、無機材料を用いることが注目されてあり、例えば
、シラン、ジシラン等のシラン化合物のガスと、炭素、
酸素又は窒素含有カス及び微量の第■族或いは第Ｖ族元
素含有ガス（例えば、ホスフィン或いはジボラン等）の
混合ガスをグロー放電分解して、上記元素を含んだアモ
ルファスシリコン膜を５〜１００μｍ程度の膜厚に形成
したものが用いられている。In recent years, as a photosensitive layer, a charge generation layer that generates charge carriers by light irradiation, and a charge transport layer that can efficiently inject and move the charge carriers generated in the charge generation layer have been developed. An electrophotographic photoreceptor having a separate so-called functionally separated photosensitive layer has been proposed as an excellent one. The use of inorganic materials for the charge transport layer provided in such functionally separated electrophotographic photoreceptors has attracted attention. For example, silane compound gases such as silane and disilane, carbon,
A mixed gas of oxygen or nitrogen-containing scum and a trace amount of group Ⅰ or group V element-containing gas (for example, phosphine or diborane) is decomposed by glow discharge to form an amorphous silicon film containing the above elements to a thickness of about 5 to 100 μm. A thick film is used.
発明か解決しようとする課題
電荷輸送層をシラン化合物のグロー放電分解によって得
るとき、電子写真感光体として十分な性能を得るために
は、膜厚を大きくすることが必要となる。そのため、通
常の製造法では、製造時間を大きくとらねばならず、更
に厚膜作成に伴う欠陥発生確率の増大による得率の低下
が引き起こされ、電子写真感光体は極めて高コストとな
る。本発明者は、上記従来の技術にあける欠点を解決す
べく鋭意検討を重ねた結果、本発明を成すに至った。Problems to be Solved by the Invention When a charge transport layer is obtained by glow discharge decomposition of a silane compound, it is necessary to increase the film thickness in order to obtain sufficient performance as an electrophotographic photoreceptor. Therefore, in the usual manufacturing method, a long manufacturing time is required, and furthermore, the yield rate decreases due to an increase in the probability of defect occurrence due to the formation of a thick film, and the cost of the electrophotographic photoreceptor becomes extremely high. The present inventor has completed the present invention as a result of intensive studies aimed at solving the drawbacks of the above-mentioned conventional techniques.
したがって、本発明の目的は、新規な電荷輸送層を有す
る電子写真感光体を提供することにある。Therefore, an object of the present invention is to provide an electrophotographic photoreceptor having a novel charge transport layer.
課題を解決するための手段
従来、ＳｉＯ２、Ａ’２０３、ＺｒＯ３、ＴｉＯ２等の
金属酸化物が、電子写真感光体の感光層と支持体界面に
存在する電荷注入阻止層として極めて薄い膜の状態で用
いられることは周知であるが、本発明者は、ゾル−ゲル
法によって作成された膜であって、周期律表第ＩＩ、Ｉ
ＩＩ、ＩＶ及び■族から選択される１種以上の元素の酸
化物よりなる膜が、電子写真感光体の電荷輸送層として
充分に機能することを見出だし、本発明を完成するに至
った。 すなわち、本発明は、支持体上に電荷発生層及
び電荷輸送層を有する電子写真感光体において、該電荷
輸送層が、ゾル−グル法により作成されたもので市って
、周期律表第ＩＩ、ＩＩＩ、ＩＶ及びＶ族から選択され
る１種以上の元素の酸化物を主たる成分としてなること
を特徴とする。Means for Solving the Problem Conventionally, metal oxides such as SiO2, A'203, ZrO3, TiO2, etc. have been used in the form of an extremely thin film as a charge injection blocking layer existing at the interface between the photosensitive layer and the support of an electrophotographic photoreceptor. Although it is well known that the sol-gel method is used in
The present inventors have discovered that a film made of an oxide of one or more elements selected from Groups II, IV, and Group II functions satisfactorily as a charge transport layer of an electrophotographic photoreceptor, leading to the completion of the present invention. That is, the present invention provides an electrophotographic photoreceptor having a charge generation layer and a charge transport layer on a support, in which the charge transport layer is prepared by the sol-glu method, , III, IV, and V groups as a main component.
本発明において、周期律表第ＩＩ、ＩＩＩ、ＩＶ及びＶ
族から選択される１種以上の元素の酸化物としては、チ
タン、ジルコニウム、亜鉛、アルミニウム、シリコン及
び錫から選択される１種以上の元素の酸化物よりなるも
のが特に好ましい。In the present invention, periodic table II, III, IV and V
As the oxide of one or more elements selected from the group, oxides of one or more elements selected from titanium, zirconium, zinc, aluminum, silicon, and tin are particularly preferred.
以下、本発明の電子写真感光体について詳記する。The electrophotographic photoreceptor of the present invention will be described in detail below.
本発明の電子写真感光体において、支持体としては、導
電性、絶縁性のどちらのものも用いることができる。導
電性支持体としては、ステンレススヂール、アルミニウ
ム等の金属あるいは合金が用いられる。又、電気絶縁性
支持体としては、ポリエステル、ポリエチレン、ポリカ
ーボネート、ポリスチレン、ポリアミドなどの合成樹脂
フィルム又はシート、ガラス、セラミック、紙などが用
いられるか、支持体として電気絶縁性のものを用いる場
合には、少なくとも他の層と接触する面が導電処理され
ていることが必要でおる。これら導電性処理は、導電性
支持体に用いられる金属を蒸着、スパッタリング、ラミ
ネートなどの処理をすることによって行うことができる
。支持体は、円筒状、ベル１〜状、板状など任意の形状
をとりうる。In the electrophotographic photoreceptor of the present invention, either conductive or insulating supports can be used. As the conductive support, metals or alloys such as stainless steel and aluminum are used. In addition, as the electrically insulating support, synthetic resin films or sheets such as polyester, polyethylene, polycarbonate, polystyrene, polyamide, glass, ceramic, paper, etc. are used, or when using an electrically insulating material as the support, It is necessary that at least the surface in contact with other layers be treated to be conductive. These conductive treatments can be carried out by vapor depositing, sputtering, laminating, or the like the metal used for the conductive support. The support body can take any shape such as a cylindrical shape, a bell shape, or a plate shape.
又、支持体は多層構造のものであってもよい。支持体の
厚さは、必要とされる電子写真感光体に応じて、適宜選
択されるが、通常１０μｍ以上のものが適している。支
持体としては、導電性、絶縁性のいずれのものも用いる
ことができる。Further, the support may have a multilayer structure. The thickness of the support is appropriately selected depending on the required electrophotographic photoreceptor, but a thickness of 10 μm or more is usually suitable. As the support, either conductive or insulating materials can be used.
上記支持体の上には、電荷発生層と電荷輸送層とが積層
されるか、その積層順序はどちらが先でもよい。A charge generation layer and a charge transport layer may be laminated on the support, or the order of lamination may be arbitrary.
本発明における電荷輸送層は、周期律表第■、■、ＩＶ
及びＶ族から選択される１種以上の元素の酸化物を主た
る成分とするものであって、ゾル−ゲル法により作成さ
れるが、特に、チタン、ジルコニウム、亜鉛、アルミニ
ウム、シリコン及び錫から選択される１種以上の元素の
酸化物より構成されるものが好ましい。In the present invention, the charge transport layer includes the periodic table No. 1, 2, and IV.
The main component is an oxide of one or more elements selected from Group V and Group V, and is produced by a sol-gel method, particularly selected from titanium, zirconium, zinc, aluminum, silicon, and tin. Preferably, the material is composed of an oxide of one or more elements.
一般に、金属アルコキシドの加水分解生成物からなるゾ
ルをゲル化し、低温で加熱してガラス貿に変化させる、
いわゆるゾル−グル法は、今日まで多く利用されており
、この方法によって高温まで加熱することができないガ
ラス、金属、プラスチックスとカラスの複合体が製造さ
れるが、本発明においては、このゾル−ゲル法を採用す
ることにより、周期律表第■、■、１ｖ及びＶ族から選
択される１種以上の元素の酸化物を主たる成分とする膜
が、電荷輸送層としての機能を有し、しかも、低いコス
トで容易に形成されるのである。Generally, a sol consisting of a metal alkoxide hydrolysis product is gelled and heated at low temperature to transform it into a glass material.
The so-called sol-glu method has been widely used to date, and this method produces composites of glass, metal, plastics, and glass that cannot be heated to high temperatures. By adopting the gel method, a film whose main component is an oxide of one or more elements selected from Groups ■, ■, 1v and V of the periodic table has a function as a charge transport layer, Moreover, it can be easily formed at low cost.
このゾル−グル法による電荷輸送層の作成について具体
的に説明する。The preparation of the charge transport layer by this Sol-Glu method will be specifically explained.
原料物質として、チタンのアルコキシド、ジルコニウム
のアルコキシド及び亜鉛のアルコキシド等、周期律表第
ＩＩ、ＩＩＩ、ＩＶ及びＶ族の金属元素のアルコキシド
か使用される。これ等の原料物質に、触媒として塩酸等
の酸を加え、かつ加水分解を生じさせるために水を加え
る。それにより、原料物質は加水分解及び重合反応を起
こし、ゾル状態になる。このゾル状態の溶液を用いて、
上記支持体を浸漬塗布することによって、表面に塗膜を
形成させ、それを加熱炉中でｉ ｏ Ｏ’Ｃ以上の温度
で乾燥させて、塗膜を焼結する。得られる酸化膜の膜厚
は、水及び触媒としての酸の量、更に溶媒としてのアル
ロールの量を変化させることにより、ゾルの粘性を変化
させ、適宜の値に設定することができるが、本発明にお
いては、電荷輸送層の膜厚は２〜１００μｍ、好ましく
は３〜３０μｍの範囲に設定される。As raw materials, alkoxides of metal elements of groups II, III, IV and V of the periodic table are used, such as titanium alkoxide, zirconium alkoxide and zinc alkoxide. To these raw materials, an acid such as hydrochloric acid is added as a catalyst, and water is added to cause hydrolysis. Thereby, the raw material undergoes hydrolysis and polymerization reactions and becomes a sol. Using this sol-state solution,
A coating film is formed on the surface by dip coating the support, and the coating film is sintered by drying it in a heating oven at a temperature of i o O'C or higher. The thickness of the resulting oxide film can be set to an appropriate value by changing the viscosity of the sol by changing the amount of water and acid as a catalyst, as well as the amount of alurol as a solvent. In the invention, the thickness of the charge transport layer is set in the range of 2 to 100 μm, preferably 3 to 30 μm.
本発明における電荷輸送層は、可視光領域において、実
質的に光感度を有しない。ここでいう光感度とは、可視
光領域の波長の光の照射によって、正孔−電子対からな
る電荷キャリアを発生しないことを意味しており、従来
提案されているＺｎＯ１Ｔ１０２を増感色素と共に樹脂
バインダ中に分散した電子写真感光層や、Ｓｅ、Ｓｅ・
下ｅ、３等のカルコゲン化合物の蒸着膜とａ−３ｉ膜を
積層したような電子写真感光層とは全く構成を異にする
ものでおる。本発明における電荷輸送層は、紫外光に対
しては光感度を有してもよい。The charge transport layer in the present invention has substantially no photosensitivity in the visible light region. Photosensitivity here means that charge carriers consisting of hole-electron pairs are not generated by irradiation with light with a wavelength in the visible light range. An electrophotographic photosensitive layer dispersed in a binder, Se, Se.
The structure is completely different from an electrophotographic photosensitive layer in which a vapor-deposited film of a chalcogen compound such as e and 3 and an a-3i film are laminated. The charge transport layer in the present invention may have photosensitivity to ultraviolet light.
一方、電荷発生層を構成する電荷発生材料としては、公
知の種々のものが使用される。例えば、無機半導体とし
てＳｌ、５ｅ１ＣｄＳなどがめげられ、これ等はＣＶＤ
法、スパッタリング法、真空蒸着法等により成膜するこ
とができる。又、有機半導体としては、ポリビニルカル
バゾールとトリニトロフルオレノン、ビスアゾ顔料、フ
タロシアニン、ピラゾリン化合物、ヒドラゾン化合物等
を使用することができ、これ等は、それ自体が成膜性を
有していない場合は、公知の成膜性樹脂を用いて層状に
形成される。On the other hand, various known charge generation materials can be used as the charge generation material constituting the charge generation layer. For example, inorganic semiconductors such as Sl and 5e1CdS have been rejected, and these are
The film can be formed by a method such as a method, a sputtering method, a vacuum evaporation method, or the like. Further, as the organic semiconductor, polyvinylcarbazole, trinitrofluorenone, bisazo pigment, phthalocyanine, pyrazoline compound, hydrazone compound, etc. can be used, and if these do not have film-forming properties themselves, It is formed into a layer using a known film-forming resin.
また、本発明の電子写真感光体においては、表面保護の
目的で表面層か形成されていてもよい。Further, in the electrophotographic photoreceptor of the present invention, a surface layer may be formed for the purpose of surface protection.
表面層は、炭素、酸素、又は窒素原子が添加された非晶
質ケイ素を主体としてなるものが好ましい実施例
以下、実施例によって本発明を説明する。The surface layer is preferably made mainly of amorphous silicon to which carbon, oxygen, or nitrogen atoms are added.Examples The present invention will be explained below with reference to Examples.
実施例１
直径的１２０ｍｍのアルミニウムパイプ上にプラズマＣ
ＶＤ装置で１ μｍのＢドープａ−３ｉニド１膜を積層
した。すなわち、容量結合型プラズマＣＶＤ装置にシラ
ン（ＳｉＨ４）ガス５０ｓｅｃｍ、水素希釈５ｐｐｍジ
ホランガス（Ｂ２１−１６ ＞ １０１０５ｅ、水素ガ
ス１０１００５ｅを導入し、圧力を１．０Ｔｏｒｒとし
た。支持体温度は、２５０°Ｃであった。１３．５６■
Ｈ２の高周波出力８０Ｗで１時間グロー放電分解を行っ
た。Example 1 Plasma C on an aluminum pipe with a diameter of 120 mm
A 1 μm B-doped a-3i nide film was laminated using a VD device. That is, 50 sec of silane (SiH4) gas, 5 ppm diphorane gas diluted with hydrogen (B21-16 > 10105e, hydrogen gas 101005e) were introduced into a capacitively coupled plasma CVD apparatus, and the pressure was set at 1.0 Torr.The support temperature was 250°C. It was 13.56■
Glow discharge decomposition was performed for 1 hour at a high frequency output of H2 of 80 W.
その後、以下のゾル−グル法によって、主にチタンと酸
素とからなる薄膜をＢドープａ−３ｉ：［」膜上に積層
した。まず、チタンテトラエトキシド３０重量部をエチ
ルアルコール２０型組部で希釈した。次にこの溶液に水
と１％塩酸２５重量部のアルコール溶液を加え、ゆっく
りと攪拌した。この混合−９＝
液に約ＩＣｍ／Ｓｅｃの引上げ速度で、浸漬塗布を行い
、真空中、全部で６時間放置し、加水分解及び重合反応
を起こさせた。以上の操作を行った後、加熱炉で１２０
’Ｃにおいて２時間加熱し、焼結を行い、チタン酸化膜
よりなる６μｍの電荷輸送層を形成した。Thereafter, a thin film mainly consisting of titanium and oxygen was laminated on the B-doped a-3i:['' film by the following Sol-Glu method. First, 30 parts by weight of titanium tetraethoxide was diluted with 20 parts of ethyl alcohol. Next, water and an alcoholic solution of 25 parts by weight of 1% hydrochloric acid were added to this solution, and the mixture was slowly stirred. This mixture-9= solution was dip coated at a pulling rate of about ICm/Sec and left in vacuum for a total of 6 hours to allow hydrolysis and polymerization reactions to occur. After performing the above operations, heat in a heating furnace for 120 minutes.
It was heated for 2 hours at 'C and sintered to form a 6 μm charge transport layer made of a titanium oxide film.
得られた電子写真感光体に、コロナ放電により帯電させ
、６００ｎｍの光によって露光したところ、＋２０μＡ
／ｃｍの感光体流入電流時に、コロナ放電による帯電か
ら０．１秒後の表面電位は＋４００Ｖであり、又、露光
後の残留電位は＋５０Ｖであった。更に、暗減衰率は１
０％／ｓｅｃであった。The obtained electrophotographic photoreceptor was charged by corona discharge and exposed to 600 nm light, resulting in +20 μA.
The surface potential 0.1 seconds after charging by corona discharge was +400 V when the photoreceptor inflow current was /cm, and the residual potential after exposure was +50 V. Furthermore, the dark decay rate is 1
It was 0%/sec.
実施例２
厚さ１ｍｍのステンレススチール基板上に、ゾル−グル
法により、ＺｒＯ２の膜を形成した。まず、ジルコニウ
ムテトライソプロポキシド：Ｚｒ（０−ｉｓｏ−Ｃ３Ｈ
７） ４のプロピルアルコール溶液２０重量部と、エチ
ルアルコール３０重量部からなる溶液を作成した。この
溶液を用いて実施例１におけると同様な操作を行ない、
膜厚的６μｍの透明膜よりなる電荷輸送層を形成した。Example 2 A ZrO2 film was formed on a 1 mm thick stainless steel substrate by the Sol-Glu method. First, zirconium tetraisopropoxide: Zr (0-iso-C3H
7) A solution consisting of 20 parts by weight of the propyl alcohol solution of 4 and 30 parts by weight of ethyl alcohol was prepared. Using this solution, perform the same operation as in Example 1,
A charge transport layer consisting of a transparent film having a thickness of 6 μm was formed.
次いで、プラズマＣＶＤ装置を用いて、シラン（Ｓ Ｉ
Ｈ４）カス６０ｃｃ／ｓｅｃ、圧力１．０Ｔｏｒｒ
、支持体温度２５０°Ｃの条件に於いて、約１μｍのａ
−３ｉＨ膜を積層した。更に形成された電荷発生層の上
に、同様にしてシラン（Ｓ ｉ Ｈ４）ガス５０ｃｃ／
ｓｅｃ。Next, using a plasma CVD device, silane (S I
H4) Waste 60cc/sec, pressure 1.0Torr
, at a support temperature of 250°C, an a of about 1 μm
-3iH films were laminated. Further, on the formed charge generation layer, 50 cc of silane (S i H4) gas was added in the same manner.
sec.
アンモニアカス（ＮＨ３＞ １０ｃｃ／ｓｅｃ、圧力
１．０ＴＯｒｒ、支持体温度２５０°Ｃの条件で膜厚６
００人のａ−３ｉ：Ｎ膜を積層した。Ammonia gas (NH3 > 10 cc/sec, pressure 1.0 TOrr, support temperature 250°C, film thickness 6
00 a-3i:N films were stacked.
このようにして得られた電子写真感光体に負のコロナ帯
電を行ったところ、−２０μＡ／ｃｍの感光体流入電流
時にコロナ帯電から０．１秒後の表面電位は約−２８０
Ｖであった。半減衰露光量は５５０ｎｍの単色露光時て
１０ｅｒｇ／ｃｍであり、又このときの残留電位は約−
４０Ｖてあった。When the electrophotographic photoreceptor thus obtained was subjected to negative corona charging, the surface potential 0.1 seconds after corona charging at a photoreceptor inflow current of -20 μA/cm was approximately -280.
It was V. The half-attenuation exposure amount is 10 erg/cm during monochrome exposure at 550 nm, and the residual potential at this time is approximately -
It was 40V.
発明の効果
本発明の電子写真感光体は、上記のようにゾル−ゲル法
により作成された、周期律表第■、■、ＩＶ及びＶ族か
ら選択される１種以上の元素の酸化物を主たる成分とす
る電荷輸送層を有することにより、低温の製造条件にお
いて製造することができ、そして、このものは、帯電性
がよく、暗減衰率が低く、又、高い感度を有するという
優れた電子写真特性を有する。Effects of the Invention The electrophotographic photoreceptor of the present invention contains an oxide of one or more elements selected from Groups ■, ■, IV, and V of the periodic table, prepared by the sol-gel method as described above. By having a charge transport layer as the main component, it can be manufactured under low-temperature manufacturing conditions, and this product has excellent electronic properties such as good chargeability, low dark decay rate, and high sensitivity. Has photographic properties.
特許出願人 富士ゼロックス株式会社代理人
弁理士 部品 剛Patent applicant Fuji Xerox Co., Ltd. Agent
Patent Attorney Tsuyoshi Parts
Claims (2)
子写真感光体において、該電荷輸送層が、ゾルーゲル法
により作成されたものであって、周期律表第II、III、
IV及びＶ族から選択される１種以上の元素の酸化物を主
たる成分としてなることを特徴とする電子写真感光体。(1) In an electrophotographic photoreceptor having a charge generation layer and a charge transport layer on a support, the charge transport layer is prepared by a sol-gel method,
An electrophotographic photoreceptor comprising as a main component an oxide of one or more elements selected from Group IV and V groups.
のであって、チタン、ジルコニウム、亜鉛、アルミニウ
ム、シリコン及び錫から選択される１種以上の元素の酸
化物よりなることを特徴とする請求項１記載の電子写真
感光体。(2) The charge transport layer is created by a sol-gel method and is made of an oxide of one or more elements selected from titanium, zirconium, zinc, aluminum, silicon, and tin. The electrophotographic photoreceptor according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10023388A JPH01271759A (en) | 1988-04-25 | 1988-04-25 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10023388A JPH01271759A (en) | 1988-04-25 | 1988-04-25 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01271759A true JPH01271759A (en) | 1989-10-30 |
Family
ID=14268553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10023388A Pending JPH01271759A (en) | 1988-04-25 | 1988-04-25 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01271759A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0296178A (en) * | 1988-08-17 | 1990-04-06 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| JP2005182027A (en) * | 2003-12-19 | 2005-07-07 | Xerox Corp | Sol-gel process for photoreceptor layers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6363051A (en) * | 1986-09-04 | 1988-03-19 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| JPH01202759A (en) * | 1988-02-09 | 1989-08-15 | Seiko Epson Corp | Electrophotographic sensitive body |
-
1988
- 1988-04-25 JP JP10023388A patent/JPH01271759A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6363051A (en) * | 1986-09-04 | 1988-03-19 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| JPH01202759A (en) * | 1988-02-09 | 1989-08-15 | Seiko Epson Corp | Electrophotographic sensitive body |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0296178A (en) * | 1988-08-17 | 1990-04-06 | Fuji Xerox Co Ltd | Electrophotographic sensitive body |
| JP2005182027A (en) * | 2003-12-19 | 2005-07-07 | Xerox Corp | Sol-gel process for photoreceptor layers |
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