JPH01270313A - Manufacture of semiconductor thin film - Google Patents
Manufacture of semiconductor thin filmInfo
- Publication number
- JPH01270313A JPH01270313A JP10087288A JP10087288A JPH01270313A JP H01270313 A JPH01270313 A JP H01270313A JP 10087288 A JP10087288 A JP 10087288A JP 10087288 A JP10087288 A JP 10087288A JP H01270313 A JPH01270313 A JP H01270313A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- annealing
- deposited
- recrystallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010408 film Substances 0.000 claims abstract description 36
- 238000000137 annealing Methods 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 150000004678 hydrides Chemical class 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000011810 insulating material Substances 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、絶縁基板上の半導体膜をビームアニールによ
り再結晶化するＳｏｌ技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a Sol technology for recrystallizing a semiconductor film on an insulating substrate by beam annealing.
本発明は、絶縁基板上の半導体膜をビームアニールによ
り再結晶化する際に、Ｓｉ水素化物やＳｉハロゲン化物
を原料ガスとして形成した半導体膜を酸素雰囲気中で熱
処理を施し半導体膜中の水素量を減少、かつ半導体膜中
の酸素濃度を増加させ、ビームアニールを容易にするも
のである。In the present invention, when recrystallizing a semiconductor film on an insulating substrate by beam annealing, the semiconductor film formed using Si hydride or Si halide as a raw material gas is heat-treated in an oxygen atmosphere to increase the amount of hydrogen in the semiconductor film. This decreases the oxygen concentration and increases the oxygen concentration in the semiconductor film, making beam annealing easier.
従来、Ｓｉ水素化物やＳｉハロゲン化物を原料ガスとし
て第２図１ａｌのように形成した半導体膜は、多量の水
素を膜内に含んでおり、第２図１ａｌのように窒素雲囲
気中で熱処理を施し半導体膜内の水素量を減らしていた
。Conventionally, a semiconductor film formed using Si hydride or Si halide as a raw material gas as shown in Fig. 2 1al contains a large amount of hydrogen, and is heat-treated in a nitrogen cloud atmosphere as shown in Fig. 2 1al. was applied to reduce the amount of hydrogen in the semiconductor film.
上記熱処理では、第２図１ａｌのようにビームアニール
中に半導体膜の飛散や膜中のボイドの発生を起こし、表
面に大きな凹凸を持った再結晶化膜になる。In the heat treatment described above, scattering of the semiconductor film and generation of voids in the film occur during beam annealing as shown in FIG. 2 1al, resulting in a recrystallized film with large irregularities on the surface.
半導体膜形成後、窒素アニールの他に、酸素アニールす
ることにより膜中の水素を減少させた。After forming the semiconductor film, in addition to nitrogen annealing, oxygen annealing was performed to reduce hydrogen in the film.
窒素アニールの他に、酸素アニールを行なうことにより
膜中の水素を減少させ、また水素ン震度の不均一を解消
し、かつ膜中の酸素イ・；度を増加させた。In addition to nitrogen annealing, oxygen annealing was performed to reduce hydrogen in the film, eliminate nonuniform hydrogen intensity, and increase oxygen intensity in the film.
以下、図面によって本発明を説明する。第１図ｆＭ１〜
（Ｃ１は本発明の第１の実施例の製造工程順を説明する
為の断面図である、
第１図ｆａｌは絶縁基板１上にｓｉｎ膜２を堆積する工
程である。絶縁基板ｌの例としては、石英や無アルカリ
ガラスやアルカリなどの不純物を含んだガラスの表面に
絶縁物をコートしてガラスからの不純物の拡散を防止し
たものなどがある８Ｓｉ薄１ＩＩＪ２は、原料としてＳ
ｉの水素化物やハロゲン化物等数多くの物質があり、堆
積方法も各種の方法がある０例えば、Ｓｉｎ、を主な原
料としてプラズマＣＶＤ法により、ａ−５ｉを堆積する
場合、堆積温度は２００℃から４００℃の間に設定し、
プラズマＣＶＤにより膜厚０．１−からＯ，ＳＲの間に
堆積する。The present invention will be explained below with reference to the drawings. Figure 1 fM1~
(C1 is a cross-sectional view for explaining the manufacturing process order of the first embodiment of the present invention. FIG. Examples include quartz, alkali-free glass, and glass containing impurities such as alkali, coated with an insulating material to prevent the diffusion of impurities from the glass.8Si thin 1IIJ2 uses S as a raw material.
There are many substances such as hydrides and halides of i, and there are various deposition methods.For example, when depositing a-5i by plasma CVD using Sin as the main raw material, the deposition temperature is 200°C. to 400℃,
The film is deposited by plasma CVD to a film thickness of 0.1- to O,SR.
又、Ｓ Ｉ Ｉ ！ ｃｆ ｚを原料としてＣＶ Ｉ）
法により、多結晶ｓｉｎ堆積する場合、堆積温度は５０
０°（：から９００ ｔの間に設定し、Ｂ！ ｎ ０１
１μｍから０．５の間に堆積する。Also, SII! CV I) using cf z as raw material
When polycrystalline sin is deposited by the method, the deposition temperature is 50°C.
Set between 0° (: and 900 t, B! n 01
Deposit between 1 μm and 0.5 μm.
第１図（ｇｌは第１図ｔａ＋のようにして堆積した５ｉ
ｉｉ膜を、酸素雰囲気中で熱処理する工程である。堆積
１−だ薄膜を、０８雰囲気中で、例えば、室７塁から２
時間程かけて４００℃から７００℃程度の任意の温度に
加熱し、そのまま１時間程アニールし、その後７時間程
かけて室温まで温度を降下させる等のように熱処理する
。以上の工程で膜中の水素が除去され、かつ酸素が増加
する。Figure 1 (gl is 5i deposited as in Figure 1 ta+)
This is a step of heat-treating the ii film in an oxygen atmosphere. The deposited 1-layer thin film is deposited, for example, from 7th base to 2nd base in a 08 atmosphere.
Heat treatment is performed by heating to an arbitrary temperature of about 400° C. to 700° C. over a period of time, annealing as it is for about 1 hour, and then lowering the temperature to room temperature over a period of about 7 hours. Through the above steps, hydrogen in the film is removed and oxygen is increased.
第１図（Ｃ１は、Ｓｉ薄膜２をエネルギービーム４でア
ニールして再結晶Ｓｉ薄膜３を製作する］−捏である。FIG. 1 (C1 is a process in which a Si thin film 2 is annealed with an energy beam 4 to produce a recrystallized Si thin film 3).
アニール方法にはレーザや電子ビームまたはランプやヒ
ータなどを用いた多数の方法があるが、ここでは静レー
ザを使用して行なう。Although there are many methods for annealing using a laser, an electron beam, a lamp, a heater, etc., a static laser is used here.
一般にＳｉＨ４のみで堆積したａ−３ｉには多量の水素
が含まれているが、０□雰囲気中で熱処理した事で水素
が除去され、かつ酸素が増加しているため、ビーム７二
−ルにより平坦で結晶性の良い再結晶薄膜３ができる。In general, a-3i deposited with only SiH4 contains a large amount of hydrogen, but the heat treatment in a 0□ atmosphere removes hydrogen and increases oxygen, so beam 7 A recrystallized thin film 3 that is flat and has good crystallinity is produced.
第３図（８）〜（ｄ＋は、本発明の第２の実施例の製造
工程順を説明する断面図である。FIGS. 3(8) to 3(d+) are cross-sectional views illustrating the order of manufacturing steps of the second embodiment of the present invention.
第３図（ａｌはＳｉ基板６上に絶縁膜７を形成する工程
である。絶縁Ｗｉ７の例としてはＳ１酸化膜やＳｉ窒化
膜等があり、形成法にも熱酸化や（’： Ｖ Ｄなど多
数の方法があるが、ここではプラズマＣＶＤ法で堆積し
たＳｉ酸化膜を用いる。FIG. 3 (Al is the step of forming an insulating film 7 on the Si substrate 6. Examples of the insulating Wi 7 include an S1 oxide film and a Si nitride film, and forming methods include thermal oxidation and (': V D Although there are many methods such as this, a Si oxide film deposited by plasma CVD method is used here.
第３図中）は、絶縁膜７上にＳｉ薄膜２を堆積する工程
で、第１の実施例の第１図ｆａｔと同様にして堆積する
。3) is a step of depositing the Si thin film 2 on the insulating film 7, which is deposited in the same manner as in FIG. 1 fat of the first embodiment.
第３図（Ｃ１は第３図（ｂｌのようにして堆積したＳｉ
ｌ膜２を、酸素雰囲気中で熱処理する工程であり、第１
の実施例の第１図中）と同様にして処理する。Figure 3 (C1 is Si deposited as shown in Figure 3 (bl)
This is a step of heat-treating the l film 2 in an oxygen atmosphere, and the first
Processing is performed in the same manner as in the embodiment (in FIG. 1).
第３図ｆｄｌは、Ｓｉ薄膜２をエネルギービーム４でア
ニールして再結晶Ｓｉ薄膜３を製作する工程であり、第
１の実施例と同様にして行なう。FIG. 3fdl shows a step of annealing the Si thin film 2 with an energy beam 4 to produce a recrystallized Si thin film 3, which is carried out in the same manner as in the first embodiment.
以上のようにして、５ｉＪＪ板６上の絶縁膜７の−Ｅに
堆積したＳｉ薄膜２を酸素雰囲気中で熱処理する事によ
り、エネルギービーム４でアニールした浚に平坦で結晶
性の良い再結晶５ｉＦｔｌ膜３ができる。By heat-treating the Si thin film 2 deposited on -E of the insulating film 7 on the 5iJJ board 6 in the above manner in an oxygen atmosphere, the recrystallized 5iFtl is flat and has good crystallinity on the surface annealed with the energy beam 4. A film 3 is formed.
〔発明の効果）
以上説明したように、堆積したＳ１薄膜を酸素雰囲気中
で熱処理する事により、膜中の水素を減少させ、また水
素１度の不均一を解消し、かつ膜中の酸素濃度を増加さ
せる事ができるので、ビームアニール後、平坦で結晶性
の良い再結晶Ｓｉ薄膜ができる。[Effects of the Invention] As explained above, by heat-treating the deposited S1 thin film in an oxygen atmosphere, hydrogen in the film is reduced, hydrogen non-uniformity is eliminated, and the oxygen concentration in the film is reduced. After beam annealing, a flat recrystallized Si thin film with good crystallinity can be obtained.
【図面の簡単な説明】
第１図ｔａ＋〜（ｃｌは本発明の第１の実施例の製造工
程順を説明するための断面図、第２Ｅｔａ１〜（ｃｌは
従来の製造方法の工程１頑を説明する為の＃ＪＴ面図、
第３図ｆａｔ〜ｆｄ＋は本発明の第２の実施例の製造工
程順を説明する為の断面図である。
１ ・ ・ ・ 基色縁基尋反
２・・・Ｓｉ薄膜
３・・・再結晶Ｓｉ薄膜
４ ・ エネルギービーム
５・・・走査方向
６・・・Ｓｉ基板
７・・・絶縁膜
８・・・酸素
９・・・窒素
以上
出願人 セイコー電子工業株式会社
（ｂ）８段系−
第１の喫犯イ列の筆へ４工が！１収噌−面図第１図
（ｂ） ９−
従来の９！遣ガ沫のニオ里預Ｐｉ酌図
第２図
８ 曜系−
第２の芙４琶グリの雫ム瓦ニオ１ｎ＠筺γＪ旬図第３図[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 ta + (cl) is a sectional view for explaining the manufacturing process order of the first embodiment of the present invention, and Fig. 2 Eta1 - (cl is a cross-sectional view for explaining the manufacturing process order of the first embodiment of the present invention. #JT surface diagram for explanation,
FIG. 3 fat to fd+ are cross-sectional views for explaining the manufacturing process order of the second embodiment of the present invention. 1 ・ ・ ・ Base color edge base strip 2... Si thin film 3... Recrystallized Si thin film 4 ・ Energy beam 5... Scanning direction 6... Si substrate 7... Insulating film 8... Oxygen 9...Nitrogen or above Applicant Seiko Electronics Industries Co., Ltd. (b) 8th stage series - 4th grade to the brush of the first crime row! 1 storage - Side view Figure 1 (b) 9- Conventional 9! Figure 2 8 Yo-kei - 2nd Fu 4 Waguri Shizukumu Kawara Nio 1n@Ken γJ Junzu Figure 3
Claims (2)
ールして再結晶化する工程で、前記半導体膜の堆積方法
として、Ｓｉの水素化物とＳｉのハロゲン化物を主な原
料とし、堆積後酸素雰囲気中で熱処理することを特徴と
する半導体薄膜の製造方法。(1) A step of recrystallizing a semiconductor film on an insulating substrate or an insulating film by beam annealing, in which the semiconductor film is deposited using Si hydride and Si halide as the main raw materials, and after the deposition, oxygen A method for producing a semiconductor thin film, characterized by heat treatment in an atmosphere.
コンであることを特徴とする特許請求の範囲第１項記載
の半導体薄膜の製造方法。(2) The method for manufacturing a semiconductor thin film according to claim 1, wherein the semiconductor film is made of amorphous silicon or polycrystalline silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10087288A JPH01270313A (en) | 1988-04-22 | 1988-04-22 | Manufacture of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10087288A JPH01270313A (en) | 1988-04-22 | 1988-04-22 | Manufacture of semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01270313A true JPH01270313A (en) | 1989-10-27 |
Family
ID=14285406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10087288A Pending JPH01270313A (en) | 1988-04-22 | 1988-04-22 | Manufacture of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01270313A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6979632B1 (en) | 1995-07-13 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method for thin-film semiconductor |
-
1988
- 1988-04-22 JP JP10087288A patent/JPH01270313A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6979632B1 (en) | 1995-07-13 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method for thin-film semiconductor |
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