JPH01246863A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH01246863A
JPH01246863A JP63075204A JP7520488A JPH01246863A JP H01246863 A JPH01246863 A JP H01246863A JP 63075204 A JP63075204 A JP 63075204A JP 7520488 A JP7520488 A JP 7520488A JP H01246863 A JPH01246863 A JP H01246863A
Authority
JP
Japan
Prior art keywords
thin film
formed
channel section
built
gate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63075204A
Inventor
Hideto Ishiguro
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP63075204A priority Critical patent/JPH01246863A/en
Publication of JPH01246863A publication Critical patent/JPH01246863A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To realize a CMOS structure not using an ion implantation device by a method wherein the deposition method is employed to form a dopantintroduced semiconductor thin film.
CONSTITUTION: An N-type Si thin film is attached to an insulating substrate 1 using the deposition method and is formed into islands using photolithography for the construction of N-channel field effect type thin film transistor drain electrode 2 and source electrode 3. A channel section 4 is formed of a dopant- free semiconductor thin film, a gate insulating film 5 is positioned on the channel section 4, and a gate electrode 6 is built over the channel section 4. Another gate insulating film 7 is formed on the gate electrode 6, and a P-channel field effect type thin film transistor drain electrode 8 and source electrode 9 are built on the gate insulating film 7. A channel section 10 is formed of a dopant- free semiconductor thin film bridging the two electrodes 8 and 9. A CMOS inverter is constructed when connection is established by a metal wire 13 and others among the electrodes. In this way, a CMOS structure may be built without an ion implantation device.
COPYRIGHT: (C)1989,JPO&Japio
JP63075204A 1988-03-29 1988-03-29 Semiconductor device and manufacture thereof Pending JPH01246863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63075204A JPH01246863A (en) 1988-03-29 1988-03-29 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63075204A JPH01246863A (en) 1988-03-29 1988-03-29 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH01246863A true JPH01246863A (en) 1989-10-02

Family

ID=13569430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63075204A Pending JPH01246863A (en) 1988-03-29 1988-03-29 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH01246863A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2693034A1 (en) * 1992-06-30 1993-12-31 Gold Star Co Thin-film transistor and its manufacturing process
US5567959A (en) * 1993-12-27 1996-10-22 Nec Corporation Laminated complementary thin film transistor device with improved threshold adaptability
US8470688B2 (en) 2007-07-11 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104576755A (en) * 2014-12-30 2015-04-29 深圳市华星光电技术有限公司 Thin film transistor, array substrate and display device
JP2015179838A (en) * 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2693034A1 (en) * 1992-06-30 1993-12-31 Gold Star Co Thin-film transistor and its manufacturing process
US5567959A (en) * 1993-12-27 1996-10-22 Nec Corporation Laminated complementary thin film transistor device with improved threshold adaptability
US8470688B2 (en) 2007-07-11 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841730B2 (en) 2007-07-11 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9472680B2 (en) 2011-12-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043833B2 (en) 2011-12-01 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US9368501B2 (en) 2011-12-22 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2015179838A (en) * 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 semiconductor device
WO2016106805A1 (en) * 2014-12-30 2016-07-07 深圳市华星光电技术有限公司 Thin film transistor, array substrate and display device
CN104576755A (en) * 2014-12-30 2015-04-29 深圳市华星光电技术有限公司 Thin film transistor, array substrate and display device

Similar Documents

Publication Publication Date Title
KR960008735B1 (en) Mos transistor and the manufacturing method thereof
JPS58132975A (en) Semiconductor device and preparation thereof
JPS60213062A (en) Manufacture of thin-film transistor
JPS5833870A (en) Semiconductor device
JPH0372681A (en) Manufacture of semiconductor device
JPH02304982A (en) Surface field effect transistor having dropped source and/source area for ultra-large scale integration
JPH02218166A (en) Thin film transistor
JPH03268434A (en) Field-effect transistor and manufacture thereof
JPH02294076A (en) Semiconductor integrated circuit device
JPH04267563A (en) Thin film semiconductor device and method of manufacturing same
JPS57143858A (en) Semiconductor integrated circuit
JPH04369271A (en) Thin film transistor
JPS63314868A (en) Manufacture of mos semiconductor device
JPH02303157A (en) Asymmetric cmos field effect transistor
JPS60241256A (en) Semiconductor device and manufacture thereof
JPH02166762A (en) Compact cmos device and its manufacture
JPS59155968A (en) Semiconductor memory device
JPS5681972A (en) Mos type field effect transistor
JPH03165575A (en) Thin film transistor and manufacture thereof
JPH0215675A (en) Field effect transistor and manufacture thereof
JPS5662356A (en) Logic integrated circuit device and its manufacturing method
JPS5827364A (en) Insulated gate type field effect semiconductor device
JPS63140577A (en) Field effect transistor
JPS61160975A (en) Mos field effect transistor
TW349273B (en) Fabrication method of semiconductor device containing N- and P-channel MOSFETS