JPH0123940B2 - - Google Patents

Info

Publication number
JPH0123940B2
JPH0123940B2 JP59164085A JP16408584A JPH0123940B2 JP H0123940 B2 JPH0123940 B2 JP H0123940B2 JP 59164085 A JP59164085 A JP 59164085A JP 16408584 A JP16408584 A JP 16408584A JP H0123940 B2 JPH0123940 B2 JP H0123940B2
Authority
JP
Japan
Prior art keywords
main surface
nitride film
connection hole
mesa groove
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59164085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142144A (ja
Inventor
Ryoichi Kobayashi
Seiji Fuji
Kenji Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansha Electric Manufacturing Co Ltd
Original Assignee
Sansha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co Ltd filed Critical Sansha Electric Manufacturing Co Ltd
Priority to JP59164085A priority Critical patent/JPS6142144A/ja
Publication of JPS6142144A publication Critical patent/JPS6142144A/ja
Publication of JPH0123940B2 publication Critical patent/JPH0123940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011

Landscapes

  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP59164085A 1984-08-03 1984-08-03 半導体装置の製造方法 Granted JPS6142144A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59164085A JPS6142144A (ja) 1984-08-03 1984-08-03 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59164085A JPS6142144A (ja) 1984-08-03 1984-08-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6142144A JPS6142144A (ja) 1986-02-28
JPH0123940B2 true JPH0123940B2 (enExample) 1989-05-09

Family

ID=15786491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59164085A Granted JPS6142144A (ja) 1984-08-03 1984-08-03 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6142144A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3007734B2 (ja) * 1991-11-15 2000-02-07 シャープ株式会社 太陽電池の製造方法
US5882986A (en) * 1998-03-30 1999-03-16 General Semiconductor, Inc. Semiconductor chips having a mesa structure provided by sawing

Also Published As

Publication number Publication date
JPS6142144A (ja) 1986-02-28

Similar Documents

Publication Publication Date Title
US4622574A (en) Semiconductor chip with recessed bond pads
US4179794A (en) Process of manufacturing semiconductor devices
EP0735576A3 (en) Integrated circuit fabrication
KR100253394B1 (ko) 듀얼 게이트절연막을 가지는 게이트전극의 제조방법
JPH0123940B2 (enExample)
US4067100A (en) Method of making a semiconductor device
JPH11121457A (ja) 半導体装置の製造方法
JPH01259546A (ja) 半導体装置の製造方法
JPH0511668B2 (enExample)
JPS6258541B2 (enExample)
JPH0130295B2 (enExample)
JPH0249732Y2 (enExample)
JPS5852327B2 (ja) ハンドウタイソシノ セイゾウホウホウ
JPS6159678B2 (enExample)
JPH0491453A (ja) 半導体装置
JPS63202034A (ja) 半導体装置の製造方法
JPS5893333A (ja) 半導体装置の製造方法
JPS6341228B2 (enExample)
JPS62122290A (ja) 発光素子
JP2669895B2 (ja) 半導体装置の製造方法
JP2678479B2 (ja) 半導体装置の製造方法
JPH08186083A (ja) 金属膜の形成方法
JPS603129A (ja) 半導体装置の製造方法
KR940016741A (ko) 전자방출 기판의 제조방법
JPS6118869B2 (enExample)