JPH01234388A - 半導体単結晶の成長方法 - Google Patents

半導体単結晶の成長方法

Info

Publication number
JPH01234388A
JPH01234388A JP6269388A JP6269388A JPH01234388A JP H01234388 A JPH01234388 A JP H01234388A JP 6269388 A JP6269388 A JP 6269388A JP 6269388 A JP6269388 A JP 6269388A JP H01234388 A JPH01234388 A JP H01234388A
Authority
JP
Japan
Prior art keywords
crucible
melt
outer chamber
chamber
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6269388A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0511076B2 (enrdf_load_html_response
Inventor
Masakatsu Kojima
児島　正勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6269388A priority Critical patent/JPH01234388A/ja
Publication of JPH01234388A publication Critical patent/JPH01234388A/ja
Publication of JPH0511076B2 publication Critical patent/JPH0511076B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6269388A 1988-03-16 1988-03-16 半導体単結晶の成長方法 Granted JPH01234388A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6269388A JPH01234388A (ja) 1988-03-16 1988-03-16 半導体単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6269388A JPH01234388A (ja) 1988-03-16 1988-03-16 半導体単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPH01234388A true JPH01234388A (ja) 1989-09-19
JPH0511076B2 JPH0511076B2 (enrdf_load_html_response) 1993-02-12

Family

ID=13207628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6269388A Granted JPH01234388A (ja) 1988-03-16 1988-03-16 半導体単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPH01234388A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126114A (en) * 1987-12-08 1992-06-30 Nkk Corporation Manufacturing method and equipment of single silicon crystal
WO2014038166A1 (ja) * 2012-09-04 2014-03-13 新日鐵住金株式会社 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法
CN104213198A (zh) * 2014-09-09 2014-12-17 江苏凯新隆石英科技有限公司 一种椭圆形双层石英坩埚及其制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126114A (en) * 1987-12-08 1992-06-30 Nkk Corporation Manufacturing method and equipment of single silicon crystal
WO2014038166A1 (ja) * 2012-09-04 2014-03-13 新日鐵住金株式会社 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法
KR20150046236A (ko) * 2012-09-04 2015-04-29 신닛테츠스미킨 카부시키카이샤 단결정의 제조 장치, 그것에 이용되는 도가니 및 단결정의 제조 방법
US20150225872A1 (en) * 2012-09-04 2015-08-13 Toyota Jidosha Kabushiki Kaisha Single crystal production apparatus, crucible for use therein, and method of producing single crystal
JPWO2014038166A1 (ja) * 2012-09-04 2016-08-08 新日鐵住金株式会社 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法
CN104213198A (zh) * 2014-09-09 2014-12-17 江苏凯新隆石英科技有限公司 一种椭圆形双层石英坩埚及其制备方法

Also Published As

Publication number Publication date
JPH0511076B2 (enrdf_load_html_response) 1993-02-12

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