JPH01215799A - 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 - Google Patents

半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Info

Publication number
JPH01215799A
JPH01215799A JP4250688A JP4250688A JPH01215799A JP H01215799 A JPH01215799 A JP H01215799A JP 4250688 A JP4250688 A JP 4250688A JP 4250688 A JP4250688 A JP 4250688A JP H01215799 A JPH01215799 A JP H01215799A
Authority
JP
Japan
Prior art keywords
crystal
concentration
single crystal
semi
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4250688A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476355B2 (enrdf_load_stackoverflow
Inventor
Hiromasa Yamamoto
山本　裕正
Manabu Kano
学 加納
Osamu Oda
修 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP4250688A priority Critical patent/JPH01215799A/ja
Publication of JPH01215799A publication Critical patent/JPH01215799A/ja
Publication of JPH0476355B2 publication Critical patent/JPH0476355B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4250688A 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法 Granted JPH01215799A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4250688A JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4250688A JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Publications (2)

Publication Number Publication Date
JPH01215799A true JPH01215799A (ja) 1989-08-29
JPH0476355B2 JPH0476355B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=12637950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4250688A Granted JPH01215799A (ja) 1988-02-24 1988-02-24 半絶縁性ＧａＡｓ化合物半導体単結晶及びその製造方法

Country Status (1)

Country Link
JP (1) JPH01215799A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0274597A (ja) * 1988-09-08 1990-03-14 Hitachi Cable Ltd クロムドープ半絶縁性ガリウム・ヒ素単結晶の製造方法
US5041186A (en) * 1987-11-30 1991-08-20 Kabushiki Kaisha Toshiba Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas
JP2005350295A (ja) * 2004-06-09 2005-12-22 Sumitomo Electric Ind Ltd 半導体結晶および半導体結晶の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201097A (ja) * 1987-02-13 1988-08-19 Sumitomo Electric Ind Ltd 半絶縁性ガリウム砒素単結晶

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63201097A (ja) * 1987-02-13 1988-08-19 Sumitomo Electric Ind Ltd 半絶縁性ガリウム砒素単結晶

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041186A (en) * 1987-11-30 1991-08-20 Kabushiki Kaisha Toshiba Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas
JPH0274597A (ja) * 1988-09-08 1990-03-14 Hitachi Cable Ltd クロムドープ半絶縁性ガリウム・ヒ素単結晶の製造方法
JP2005350295A (ja) * 2004-06-09 2005-12-22 Sumitomo Electric Ind Ltd 半導体結晶および半導体結晶の製造方法

Also Published As

Publication number Publication date
JPH0476355B2 (enrdf_load_stackoverflow) 1992-12-03

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