JPH0119467B2 - - Google Patents
Info
- Publication number
- JPH0119467B2 JPH0119467B2 JP22365286A JP22365286A JPH0119467B2 JP H0119467 B2 JPH0119467 B2 JP H0119467B2 JP 22365286 A JP22365286 A JP 22365286A JP 22365286 A JP22365286 A JP 22365286A JP H0119467 B2 JPH0119467 B2 JP H0119467B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- discharge
- film formation
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 86
- 239000000463 material Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 43
- 238000004140 cleaning Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 36
- 239000012535 impurity Substances 0.000 description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 239000012495 reaction gas Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 230000006837 decompression Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 239000006200 vaporizer Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005524 ceramic coating Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22365286A JPS6379970A (ja) | 1986-09-24 | 1986-09-24 | プラズマｃｖｄ法による高密着性薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22365286A JPS6379970A (ja) | 1986-09-24 | 1986-09-24 | プラズマｃｖｄ法による高密着性薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6379970A JPS6379970A (ja) | 1988-04-09 |
| JPH0119467B2 true JPH0119467B2 (ko) | 1989-04-11 |
Family
ID=16801538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22365286A Granted JPS6379970A (ja) | 1986-09-24 | 1986-09-24 | プラズマｃｖｄ法による高密着性薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6379970A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02258979A (ja) * | 1989-02-21 | 1990-10-19 | Anelva Corp | 常圧ｃｖｄ方法および装置 |
| WO1995018460A1 (en) | 1993-12-27 | 1995-07-06 | Kabushiki Kaisha Toshiba | Thin film formation method |
| TW269743B (ko) * | 1994-04-26 | 1996-02-01 | Toshiba Eng Co | |
| US5690759A (en) * | 1996-06-24 | 1997-11-25 | General Motors Corporation | Coated permanent mold having textured undersurface |
| JP5995108B2 (ja) * | 2011-08-24 | 2016-09-21 | 日本ゼオン株式会社 | カーボンナノチューブ配向集合体の製造装置及び製造方法 |
-
1986
- 1986-09-24 JP JP22365286A patent/JPS6379970A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6379970A (ja) | 1988-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |