JPH0119272B2 - - Google Patents

Info

Publication number
JPH0119272B2
JPH0119272B2 JP56215817A JP21581781A JPH0119272B2 JP H0119272 B2 JPH0119272 B2 JP H0119272B2 JP 56215817 A JP56215817 A JP 56215817A JP 21581781 A JP21581781 A JP 21581781A JP H0119272 B2 JPH0119272 B2 JP H0119272B2
Authority
JP
Japan
Prior art keywords
emitter
base
pattern
diffusion region
long side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56215817A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58115857A (ja
Inventor
Makoto Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56215817A priority Critical patent/JPS58115857A/ja
Publication of JPS58115857A publication Critical patent/JPS58115857A/ja
Publication of JPH0119272B2 publication Critical patent/JPH0119272B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP56215817A 1981-12-28 1981-12-28 半導体装置 Granted JPS58115857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56215817A JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215817A JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS58115857A JPS58115857A (ja) 1983-07-09
JPH0119272B2 true JPH0119272B2 (enrdf_load_html_response) 1989-04-11

Family

ID=16678742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215817A Granted JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS58115857A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442917Y2 (enrdf_load_html_response) * 1985-02-01 1992-10-12

Also Published As

Publication number Publication date
JPS58115857A (ja) 1983-07-09

Similar Documents

Publication Publication Date Title
US6023086A (en) Semiconductor transistor with stabilizing gate electrode
KR970077744A (ko) 박막 트랜지스터 및 그 제조 방법
US4868613A (en) Microwave monolithic integrated circuit device
US5614762A (en) Field effect transistors having comb-shaped electrode assemblies
KR950010067A (ko) 반도체장치 및 그 제조방법
KR970072480A (ko) 박막 트랜지스터의 제조방법 및 그 방법에 의해 제조되는 박막 트랜지스터의 구조
US4729969A (en) Method for forming silicide electrode in semiconductor device
JPH0582519A (ja) 半導体装置の配線及びその製造方法
JPH0119272B2 (enrdf_load_html_response)
JPS6271256A (ja) 化合物半導体集積回路
KR100288896B1 (ko) 금속 반도체 접합 전계 효과 트랜지스터
US5204735A (en) High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
KR920017256A (ko) 반도체 집적회로의 제조방법
US5449932A (en) Field effect transistor having gate and source regions in recesses
JP2868771B2 (ja) 電子ビーム露光用位置合せマークの形成方法
JPS58173870A (ja) 半導体装置の製造方法
JPS6112080A (ja) 半導体素子の製造方法
JPH0497528A (ja) 半導体装置及びその製造方法
JP3251788B2 (ja) Mos制御サイリスタ装置
JP3389510B2 (ja) 半導体装置の製造方法
JPS6110258A (ja) 半導体集積回路の形成方法
JPS6112079A (ja) 半導体素子の製造方法
JPS62193280A (ja) シヨツトキ−バリアダイオ−ド
JPS61148878A (ja) 電子装置の製造法
JPS60177679A (ja) 半導体装置