JPH0119271B2 - - Google Patents

Info

Publication number
JPH0119271B2
JPH0119271B2 JP56107261A JP10726181A JPH0119271B2 JP H0119271 B2 JPH0119271 B2 JP H0119271B2 JP 56107261 A JP56107261 A JP 56107261A JP 10726181 A JP10726181 A JP 10726181A JP H0119271 B2 JPH0119271 B2 JP H0119271B2
Authority
JP
Japan
Prior art keywords
type
region
emitter
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56107261A
Other languages
English (en)
Japanese (ja)
Other versions
JPS589353A (ja
Inventor
Masahiro Watanabe
Yoichi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP56107261A priority Critical patent/JPS589353A/ja
Publication of JPS589353A publication Critical patent/JPS589353A/ja
Publication of JPH0119271B2 publication Critical patent/JPH0119271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56107261A 1981-07-08 1981-07-08 半導体集積回路 Granted JPS589353A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56107261A JPS589353A (ja) 1981-07-08 1981-07-08 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56107261A JPS589353A (ja) 1981-07-08 1981-07-08 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS589353A JPS589353A (ja) 1983-01-19
JPH0119271B2 true JPH0119271B2 (cs) 1989-04-11

Family

ID=14454557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56107261A Granted JPS589353A (ja) 1981-07-08 1981-07-08 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS589353A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62235412A (ja) * 1986-04-02 1987-10-15 Daido Steel Co Ltd 溶鋼への資材添加方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127064A (en) * 1979-03-26 1980-10-01 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS589353A (ja) 1983-01-19

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