JPH0119265B2 - - Google Patents
Info
- Publication number
- JPH0119265B2 JPH0119265B2 JP15458381A JP15458381A JPH0119265B2 JP H0119265 B2 JPH0119265 B2 JP H0119265B2 JP 15458381 A JP15458381 A JP 15458381A JP 15458381 A JP15458381 A JP 15458381A JP H0119265 B2 JPH0119265 B2 JP H0119265B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- temperature
- time
- semiconductor device
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 121
- 230000007547 defect Effects 0.000 claims description 97
- 239000013078 crystal Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 230000000694 effects Effects 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 66
- 238000011282 treatment Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005247 gettering Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15458381A JPS5856343A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15458381A JPS5856343A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856343A JPS5856343A (ja) | 1983-04-04 |
| JPH0119265B2 true JPH0119265B2 (US08177716-20120515-C00003.png) | 1989-04-11 |
Family
ID=15587374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15458381A Granted JPS5856343A (ja) | 1981-09-29 | 1981-09-29 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856343A (US08177716-20120515-C00003.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005524228A (ja) * | 2002-04-23 | 2005-08-11 | エス オー イ テク シリコン オン インシュレータ テクノロジース | 高抵抗支持体上に有用層を有する基板の製造方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887833A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS58501927A (ja) * | 1981-12-31 | 1983-11-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | シリコン・ウエハ中の酸素析出を減少させるための方法 |
| JPH03185831A (ja) * | 1989-12-15 | 1991-08-13 | Komatsu Denshi Kinzoku Kk | 半導体装置の製造方法 |
| JP3294723B2 (ja) * | 1994-09-26 | 2002-06-24 | 東芝セラミックス株式会社 | シリコンウェーハの製造方法およびシリコンウェーハ |
| US8357939B2 (en) | 2009-12-29 | 2013-01-22 | Siltronic Ag | Silicon wafer and production method therefor |
-
1981
- 1981-09-29 JP JP15458381A patent/JPS5856343A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005524228A (ja) * | 2002-04-23 | 2005-08-11 | エス オー イ テク シリコン オン インシュレータ テクノロジース | 高抵抗支持体上に有用層を有する基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5856343A (ja) | 1983-04-04 |
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