JPH01171548U - - Google Patents

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Publication number
JPH01171548U
JPH01171548U JP6864688U JP6864688U JPH01171548U JP H01171548 U JPH01171548 U JP H01171548U JP 6864688 U JP6864688 U JP 6864688U JP 6864688 U JP6864688 U JP 6864688U JP H01171548 U JPH01171548 U JP H01171548U
Authority
JP
Japan
Prior art keywords
voltage
memory
circuit
charging
secondary battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6864688U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6864688U priority Critical patent/JPH01171548U/ja
Publication of JPH01171548U publication Critical patent/JPH01171548U/ja
Pending legal-status Critical Current

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  • Techniques For Improving Reliability Of Storages (AREA)
  • Stand-By Power Supply Arrangements (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案パツケージの第1実施例の構成
を示すブロツク図、第2図はその斜視図、第3図
及び第4図は本考案パツケージの第1実施例の各
構成を示す接続図、第5図は本考案パツケージの
第2実施例の構成を示す接続図、第6図は本考案
パツケージの第3実施例の構成を示すブロツク図
、第7図はその斜視図、第8図は第3実施例の構
成を示す接続図、第9図は本考案パツケージの第
4実施例の構成を示すブロツク図、第10図は第
4実施例の構成を示す回路図である。 1……充電回路、2……二次電池、3……電圧
検出用ICを用いた電圧検出回路、4……電源供
給回路、5……メモリプロテクトロジツク回路、
,D……ダイオード、CPU……中央処理
装置、M……メモリ。
Fig. 1 is a block diagram showing the structure of the first embodiment of the package of the present invention, Fig. 2 is a perspective view thereof, and Figs. 3 and 4 are connection diagrams showing the respective structures of the first embodiment of the package of the present invention. , FIG. 5 is a connection diagram showing the structure of the second embodiment of the package of the present invention, FIG. 6 is a block diagram showing the structure of the third embodiment of the package of the present invention, FIG. 7 is a perspective view thereof, and FIG. 8 9 is a connection diagram showing the structure of the third embodiment, FIG. 9 is a block diagram showing the structure of the fourth embodiment of the package of the present invention, and FIG. 10 is a circuit diagram showing the structure of the fourth embodiment. DESCRIPTION OF SYMBOLS 1... Charging circuit, 2... Secondary battery, 3... Voltage detection circuit using voltage detection IC, 4... Power supply circuit, 5... Memory protection logic circuit,
D1 , D2 ...Diode, CPU...Central processing unit, M...Memory.

Claims (1)

【実用新案登録請求の範囲】 (1) 直流電圧Viを入力して充電用電圧Vzを
ダイオードDを介して出力する充電回路1と、
充電用電圧Vzにより常時充電される小形の二次
電池2と、直流電圧Viが許容範囲以下に低下し
たことを検出する電圧検出用ICを用いた電圧検
出回路3と、この電圧検出回路3の出力に基づい
てメモリMへの供給電力を遮断する電源供給回路
4と、この回路4によりメモリMへの電力が遮断
されたとき二次電池2の電圧をメモリMに供給す
るダイオードDと、直流電圧Viが許容範囲以
下に低下したときに電源供給回路4より得られる
出力に基づいてメモリMの書き込み動作を禁止し
メモリMをプロテクトするメモリプロテクトロジ
ツク回路5とをパツクしてなる充電機能付き二次
電池パツケージ。 (2) 直流電圧Viを入力して充電用電圧Vzを
ダイオードDを介して出力する充電回路1と、
充電用電圧Vzにより常時充電される小形の二次
電池2と、直流電圧Viが許容範囲以下に低下し
たことを検出する電圧検出用ICを用いた電圧検
出回路3と、この電圧検出回路3の出力に基づい
てメモリMへの供給電力を遮断する電源供給回路
4と、この回路4によりメモリMへの電力が遮断
されたとき、二次電池2の電圧をメモリMに供給
するダイオードDと、中央処理装置CPUの
信号に基づいてメモリMの書き込み動作を
禁止しメモリMをプロテクトするメモリプロテク
トロジツク回路5とをパツクしてなる充電機能付
き二次電池パツケージ。 (3) 直流電圧Viを入力して充電用電圧Vzを
ダイオードDを介して出力する充電回路1と、
充電用電圧Vzにより常時充電される小形の二次
電池2と、直流電圧Viが許容範囲以下に低下し
たことを検出する電圧検出用ICを用いた電圧検
出回路3と、この電圧検出回路3の出力に基づい
てメモリMへの供給電力を遮断する電源供給回路
4と、この回路4によりメモリMへの電力を遮断
したとき二次電池2の電圧をメモリMに供給する
ダイオードDと、電源供給回路4よりの出力と
この中央処理装置CPUの信号に基づい
てメモリMの書き込み動作を禁止しメモリMをプ
ロテクトするメモリプロテクトロジツク回路5と
をパツクしてなる充電機能付き二次電池パツケー
ジ。 (4) 直流電圧Viを入力して充電用電圧Vzを
ダイオードDを介して出力する充電回路1と、
充電用電圧Vzにより常時充電される小形の二次
電池2と、直流電圧Viが許容範囲以下に低下し
たことを検出する電圧検出用ICを用いた電圧検
出回路3と、この電圧検出回路3の出力に基づい
てメモリMへの供給電力を遮断する電源供給回路
4と、この回路4によりメモリMへの電力を遮断
したとき、二次電池2の電圧をメモリMに供給す
るダイオードDと、電圧検出回路3よりの出力
によりメモリMの書き込み動作を禁止しメモリM
をプロテクトするメモリプロテクトロジツク回路
5とをパツクしてなる充電機能付き二次電池パツ
ケージ。 (5) 直流電圧Viを入力して充電用電圧Vzを
ダイオードDを介して出力する充電回路1と、
充電用電圧Vzにより常時充電される小形の二次
電池2と、直流電圧Viが許容範囲以下に低下し
たことを検出する電圧検出用ICを用いた電圧検
出回路3と、この電圧検出回路3の出力に基づい
てメモリMへの供給電力を遮断する電源供給回路
4と、この回路4によりメモリMへの電力を遮断
したとき、二次電池2の電圧をメモリMに供給す
るダイオードDと、直流電圧Viが許容範囲以
下となつたときメモリMをプロテクトし、直流電
圧Viが許容範囲内に復帰したときリセツト回路
の出力に基づいて所定時間メモリMの書き込み動
作の禁止を継続するメモリプロテクトロジツク回
路5とをパツクしてなる充電機能付き二次電池パ
ツケージ。
[Claims for Utility Model Registration] (1) A charging circuit 1 that inputs a DC voltage Vi and outputs a charging voltage Vz via a diode D2 ;
A small secondary battery 2 that is constantly charged with a charging voltage Vz, a voltage detection circuit 3 using a voltage detection IC that detects when the DC voltage Vi has fallen below an allowable range, and a power supply circuit 4 that cuts off the power supplied to the memory M based on the output; a diode D1 that supplies the voltage of the secondary battery 2 to the memory M when the power to the memory M is cut off by this circuit 4; A charging function that includes a memory protection logic circuit 5 that protects the memory M by prohibiting the write operation of the memory M based on the output obtained from the power supply circuit 4 when the DC voltage Vi falls below an allowable range. Comes with secondary battery package. (2) a charging circuit 1 that inputs a DC voltage Vi and outputs a charging voltage Vz via a diode D2 ;
A small secondary battery 2 that is constantly charged with a charging voltage Vz, a voltage detection circuit 3 using a voltage detection IC that detects when the DC voltage Vi has fallen below an allowable range, and A power supply circuit 4 that cuts off the power supplied to the memory M based on the output; and a diode D1 that supplies the voltage of the secondary battery 2 to the memory M when the power to the memory M is cut off by this circuit 4 . , and a memory protection logic circuit 5 which protects the memory M by inhibiting write operation of the memory M based on a signal from a central processing unit CPU. (3) a charging circuit 1 that inputs a DC voltage Vi and outputs a charging voltage Vz via a diode D2 ;
A small secondary battery 2 that is constantly charged with a charging voltage Vz, a voltage detection circuit 3 using a voltage detection IC that detects when the DC voltage Vi has fallen below an allowable range, and A power supply circuit 4 that cuts off the power supplied to the memory M based on the output, a diode D1 that supplies the voltage of the secondary battery 2 to the memory M when the power to the memory M is cut off by this circuit 4, and a power supply. A secondary battery package with a charging function is packed with a memory protection logic circuit 5 which protects the memory M by inhibiting write operation of the memory M based on the output from the supply circuit 4 and the signal from the central processing unit CPU. (4) a charging circuit 1 that inputs a DC voltage Vi and outputs a charging voltage Vz via a diode D2 ;
A small secondary battery 2 that is constantly charged with a charging voltage Vz, a voltage detection circuit 3 using a voltage detection IC that detects when the DC voltage Vi has fallen below an allowable range, and a power supply circuit 4 that cuts off the power supplied to the memory M based on the output; a diode D1 that supplies the voltage of the secondary battery 2 to the memory M when the power to the memory M is cut off by this circuit 4; The output from the voltage detection circuit 3 inhibits the write operation of the memory M.
A secondary battery package with a charging function is packed with a memory protection logic circuit 5 for protecting the memory. (5) a charging circuit 1 that inputs a DC voltage Vi and outputs a charging voltage Vz via a diode D2 ;
A small secondary battery 2 that is constantly charged with a charging voltage Vz, a voltage detection circuit 3 using a voltage detection IC that detects when the DC voltage Vi has fallen below an allowable range, and a power supply circuit 4 that cuts off the power supplied to the memory M based on the output; a diode D 1 that supplies the voltage of the secondary battery 2 to the memory M when the power to the memory M is cut off by this circuit 4; A memory protection technology that protects the memory M when the DC voltage Vi falls below the allowable range, and continues to prohibit write operations to the memory M for a predetermined period of time based on the output of a reset circuit when the DC voltage Vi returns to within the allowable range. This is a secondary battery package with a charging function, which is made up of a power supply circuit 5 and a power supply circuit 5.
JP6864688U 1988-05-23 1988-05-23 Pending JPH01171548U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6864688U JPH01171548U (en) 1988-05-23 1988-05-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6864688U JPH01171548U (en) 1988-05-23 1988-05-23

Publications (1)

Publication Number Publication Date
JPH01171548U true JPH01171548U (en) 1989-12-05

Family

ID=31293954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6864688U Pending JPH01171548U (en) 1988-05-23 1988-05-23

Country Status (1)

Country Link
JP (1) JPH01171548U (en)

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