JPH01165100A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPH01165100A JPH01165100A JP63210766A JP21076688A JPH01165100A JP H01165100 A JPH01165100 A JP H01165100A JP 63210766 A JP63210766 A JP 63210766A JP 21076688 A JP21076688 A JP 21076688A JP H01165100 A JPH01165100 A JP H01165100A
- Authority
- JP
- Japan
- Prior art keywords
- address
- circuit
- defective
- output
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210766A JPH01165100A (ja) | 1988-08-26 | 1988-08-26 | 半導体メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210766A JPH01165100A (ja) | 1988-08-26 | 1988-08-26 | 半導体メモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57113916A Division JPS595497A (ja) | 1982-07-02 | 1982-07-02 | 半導体rom |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01165100A true JPH01165100A (ja) | 1989-06-29 |
| JPH0357559B2 JPH0357559B2 (enExample) | 1991-09-02 |
Family
ID=16594778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63210766A Granted JPH01165100A (ja) | 1988-08-26 | 1988-08-26 | 半導体メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165100A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680354A (en) * | 1995-07-14 | 1997-10-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device capable of reading information stored in a non-volatile manner in a particular operation mode |
| JP2017502445A (ja) * | 2014-01-08 | 2017-01-19 | クアルコム,インコーポレイテッド | 抵抗性メモリのビット不良のリアルタイム訂正 |
-
1988
- 1988-08-26 JP JP63210766A patent/JPH01165100A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5680354A (en) * | 1995-07-14 | 1997-10-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device capable of reading information stored in a non-volatile manner in a particular operation mode |
| JP2017502445A (ja) * | 2014-01-08 | 2017-01-19 | クアルコム,インコーポレイテッド | 抵抗性メモリのビット不良のリアルタイム訂正 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0357559B2 (enExample) | 1991-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3892832B2 (ja) | 半導体記憶装置 | |
| US4942556A (en) | Semiconductor memory device | |
| US4592024A (en) | Semiconductor ROM | |
| JPH07226100A (ja) | 半導体メモリ装置 | |
| JPH08212796A (ja) | 半導体メモリ装置の冗長回路及び冗長方法 | |
| US7949933B2 (en) | Semiconductor integrated circuit device | |
| JP2669303B2 (ja) | ビットエラー訂正機能付き半導体メモリ | |
| JPH06119796A (ja) | 欠陥メモリセル救済用デコーダ | |
| US11443827B2 (en) | Memory device and method for error detection | |
| JPH0683716A (ja) | 電気的書換可能型不揮発メモリ | |
| US6731550B2 (en) | Redundancy circuit and method for semiconductor memory devices | |
| JPH0383299A (ja) | 半導体記憶装置 | |
| CN111694691B (zh) | 一种纠检错后具有自动回写功能的sram电路及回写方法 | |
| JP2515097B2 (ja) | 半導体記憶装置 | |
| JP2004521430A (ja) | メモリエラー処理のための方法及び回路装置 | |
| JP2003059290A (ja) | 半導体メモリ装置 | |
| CN100498975C (zh) | 半导体存储器件和半导体存储器件测试方法 | |
| JPH01165100A (ja) | 半導体メモリ | |
| JPS6120300A (ja) | 欠陥救済回路を有する半導体メモリ | |
| US8370708B2 (en) | Data error measuring circuit for semiconductor memory apparatus | |
| JP3898390B2 (ja) | 半導体記憶装置 | |
| CN117524291B (zh) | 封装后修复电路、封装后修复方法和存储器装置 | |
| US7069482B1 (en) | ROM error-correction control | |
| JPS61123100A (ja) | 半導体記憶装置 | |
| JP3580267B2 (ja) | 半導体記憶装置 |