JPH0116379B2 - - Google Patents

Info

Publication number
JPH0116379B2
JPH0116379B2 JP56004852A JP485281A JPH0116379B2 JP H0116379 B2 JPH0116379 B2 JP H0116379B2 JP 56004852 A JP56004852 A JP 56004852A JP 485281 A JP485281 A JP 485281A JP H0116379 B2 JPH0116379 B2 JP H0116379B2
Authority
JP
Japan
Prior art keywords
gas
thin film
solid electrolyte
gate
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56004852A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57119252A (en
Inventor
Katsuhiro Teraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56004852A priority Critical patent/JPS57119252A/ja
Publication of JPS57119252A publication Critical patent/JPS57119252A/ja
Publication of JPH0116379B2 publication Critical patent/JPH0116379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP56004852A 1981-01-16 1981-01-16 Gas sensor element Granted JPS57119252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56004852A JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56004852A JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Publications (2)

Publication Number Publication Date
JPS57119252A JPS57119252A (en) 1982-07-24
JPH0116379B2 true JPH0116379B2 (enrdf_load_stackoverflow) 1989-03-24

Family

ID=11595200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56004852A Granted JPS57119252A (en) 1981-01-16 1981-01-16 Gas sensor element

Country Status (1)

Country Link
JP (1) JPS57119252A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57119251A (en) * 1981-01-16 1982-07-24 Seiko Epson Corp Gas sensor element
DE102005046944A1 (de) * 2005-09-30 2007-04-05 Micronas Gmbh Gassensitiver Feldeffekttransistor zur Detektion von Chlor

Also Published As

Publication number Publication date
JPS57119252A (en) 1982-07-24

Similar Documents

Publication Publication Date Title
TWI422818B (zh) 氫離子感測場效電晶體及其製造方法
US6109094A (en) Method and device for gas sensing
CN107449811B (zh) 具有保护栅极电介质的阻挡层的基于fet的湿度传感器
US6450007B1 (en) Robust single-chip hydrogen sensor
JP6233512B2 (ja) ガスセンサー、及びセンサー装置
JPH03222367A (ja) 絶縁ゲート型電界効果トランジスタ
US20140061728A1 (en) Gate Biasing Electrodes For FET Sensors
US4909921A (en) Electrochemical sensor facilitating repeated measurement
JPH0374947B2 (enrdf_load_stackoverflow)
US4650561A (en) Gas sensor
JPH0116379B2 (enrdf_load_stackoverflow)
JP2007017312A (ja) 半導体ガスセンサとその製造方法
JPS62237347A (ja) 電界効果トランジスタ型ガスセンサ−
JPH0115015B2 (enrdf_load_stackoverflow)
WO2016125283A1 (ja) ガスセンサ及びセンサ装置
JPS634657B2 (enrdf_load_stackoverflow)
CN113924477B (zh) 对湿度和温度可忽略响应的气体传感器
JP2514280B2 (ja) 集積化イオンセンサ
Stoev et al. An integrated gas sensor on silicon substrate with sensitive SnOx layer
JP2546340B2 (ja) 感湿素子およびその動作回路
JPH083476B2 (ja) Fet型センサ
JPS6111652A (ja) 電界効果型半導体センサ
JPH01152355A (ja) pHセンサ
JPH02249962A (ja) Fetセンサ
JPH029306B2 (enrdf_load_stackoverflow)