JPH01148798A - Production of superconducting thin film - Google Patents
Production of superconducting thin filmInfo
- Publication number
- JPH01148798A JPH01148798A JP62309048A JP30904887A JPH01148798A JP H01148798 A JPH01148798 A JP H01148798A JP 62309048 A JP62309048 A JP 62309048A JP 30904887 A JP30904887 A JP 30904887A JP H01148798 A JPH01148798 A JP H01148798A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconducting thin
- crystal growth
- growth chamber
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000012495 reaction gas Substances 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 229910052731 fluorine Inorganic materials 0.000 claims abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 150000002902 organometallic compounds Chemical class 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 239000002887 superconductor Substances 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 3
- 125000002524 organometallic group Chemical group 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002603 lanthanum Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は有機金属化合物を用いた気相成長法によシ超電
導薄膜を作成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a superconducting thin film by a vapor phase growth method using an organometallic compound.
従来の技術
最近、高温超電導体としてＹ−Ｂａ−Ｃｕ−０系が提案
され注目されている（ Ｍ 、 Ｋ 、 ＷｕＭ、 Ｋ
、Ｗｎｅｔａｎ、フィジカル レビュー レターズ（
ＰｈｙｓｉｃａｌＲｅｖｉｅｗ Ｌｅｔｔｅｒｓ）Ｖｏ
ｗ、 ５ Ｂ 、 Ａ ９ 、９０９−９１０（１９
８７）］。Conventional technology Recently, the Y-Ba-Cu-0 system has been proposed as a high-temperature superconductor and has attracted attention (M, K, WuM, K
, Wnetan, Physical Review Letters (
Physical Review Letters) Vo
w, 5B, A9, 909-910 (19
87)].
この材料系が提案されるまではニオブとゲルマニウムの
化合物、Ｎｂ５Ｇθ薄膜の２３Ｋが最高の転移温度であ
った。これまでの超電導材料は金属あるいは半導体であ
りＢＣ３理論から転移温度限界が予測されていた。Until this material system was proposed, the highest transition temperature of a Nb5Gθ thin film, a compound of niobium and germanium, was 23K. Until now, superconducting materials have been metals or semiconductors, and the transition temperature limit has been predicted from the BC3 theory.
Ｙ−Ｂａ−Ｃｕ−０系材料は酸化物セラミクスであり詳
細は明らかではないが転移温度が室温あるいはそれ以上
に高くなる可能性があシ高温超電導体として期待される
。The Y-Ba-Cu-0 material is an oxide ceramic, and although the details are not clear, the transition temperature may be higher than room temperature or higher, and it is expected to be a high-temperature superconductor.
発明が解決しようとする問題点
しかしながら、Ｙ−Ｂａ−Ｃｕ−０系の材料は、現在焼
結法でしか形成できないためセラミックの粉末あるいは
ブロックの形状でしか得られない。−方、実用化を考え
た場合、セラミックの粉末あるいはブロックとしての用
途もあるが薄膜化することが強く望まれている。また、
この種の焼結体では、−度焼結させたのち、含まれる酸
素の量をコントロールするだめに、再度酸素雰囲気中で
アニールする必要があり酸素量によっては超電導になら
ない場合もある。Problems to be Solved by the Invention However, Y-Ba-Cu-0 based materials can currently only be formed by sintering, and therefore can only be obtained in the form of ceramic powder or blocks. - On the other hand, when considering practical use, there is a strong desire to make it into a thin film, although it may be used as ceramic powder or blocks. Also,
After this type of sintered body has been sintered, it is necessary to anneal it again in an oxygen atmosphere in order to control the amount of oxygen contained, and depending on the amount of oxygen, it may not become superconducting.
問題点を解決するだめの手段
これらの問題点を解決するために、本発明は有機金属化
合物を用いて気相成長法により超電導薄膜を形成するも
のであシ、原料ガスに有機金属化合物を用いることによ
り、成長温度は幅広くとることができる。また、成長雰
囲気も水素や不活性ガス雰囲気中に所定の酸素を混入さ
せることにより成膜中の酸素量を容易にコントロールす
ることができる。また、エキシマレーザ等の光を用いる
ことによシ超電導薄膜の構成元素と酸素間の結合を切っ
たり、酸素と炭素間の結合を切ったりできるので、この
方法によっても成膜中の酸素量はコントロールできる。Means for Solving the Problems In order to solve these problems, the present invention forms a superconducting thin film by vapor phase growth using an organometallic compound, and uses the organometallic compound as a raw material gas. As a result, the growth temperature can be varied over a wide range. Furthermore, the amount of oxygen during film formation can be easily controlled by mixing a predetermined amount of oxygen into the growth atmosphere such as hydrogen or an inert gas atmosphere. In addition, by using light from an excimer laser, etc., it is possible to break the bonds between the constituent elements of the superconducting thin film and oxygen, as well as the bonds between oxygen and carbon, so this method also reduces the amount of oxygen during film formation. I can control it.
作 用
本発明によると、超電導体が容易に薄膜化でき、また成
膜後のアニールを必要とせず一度の成長で超電導薄膜が
形成できる。従来の焼結体に比べて均質である。Effects According to the present invention, a superconductor can be easily made into a thin film, and a superconducting thin film can be formed by one-time growth without requiring annealing after film formation. It is more homogeneous than conventional sintered bodies.
実施例
本発明の一実施例を図面とともに説明する。第１図に第
１の実施例を示す。１は結晶成長室、２はサセプターた
とえば炭素製サセプター、３は基板たとえばＳｒＴｉＯ
３，４はキャリアガスとして用いる水素（Ｈ）、６は酸
素（０２）、６はトリスジピバロイルメタナトイツトリ
ウム（Ｙ（Ｃ１１Ｈ１９ｏ２）３）（以下Ｙ（ＤＰＭ）
と記す）、７はバリウムヘキサフルオロアセチルアセト
ナト錯体（Ｂａ （Ｃ５ＨＦ６０２）２）（以下Ｂａ（
ＨＦＡ）２と記す）、８はビスヘキサフルオロアセチル
アセトナト鋼（Ｃｕ（Ｃ６ＨＦ６０２）２（以下Ｃｕ
（ＨＦ Ａ ） ２と記す）、９は反応ガスを結晶成長
室に導く反応ガス導入管、１０はサセプターを熱する高
周波誘導コイルである。Embodiment An embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a first embodiment. 1 is a crystal growth chamber, 2 is a susceptor, for example, a carbon susceptor, and 3 is a substrate, for example, SrTiO.
3 and 4 are hydrogen (H) used as carrier gas, 6 is oxygen (02), and 6 is trisdipivaloylmethanatoytrium (Y(C11H19o2)3) (hereinafter referred to as Y(DPM)).
), 7 is a barium hexafluoroacetylacetonato complex (Ba (C5HF602)2) (hereinafter referred to as Ba (
8 is bishexafluoroacetylacetonato steel (Cu(C6HF602)2 (hereinafter referred to as Cu
(denoted as HF A ) 2), 9 is a reaction gas introduction pipe for introducing the reaction gas into the crystal growth chamber, and 10 is a high frequency induction coil for heating the susceptor.
この方法は基本的には化合物半導体の単結晶薄膜の結晶
成長に用いられている方法と類似したＭ○ＶＰＥ （Ｍ
ｅｔａｌ Ｏｒｇａｎｉｃ Ｖａｐｏｒ Ｐｈａｓｅ
Ｅｐｉｔａｒｙ）法であり焼結させる場合と異なシ非平
衡状態で作成するため成長温度を幅広く検討することが
でき非常に都合がよい。以下に具体的に述べる。This method is basically similar to the method used for crystal growth of single crystal thin films of compound semiconductors.
etal Organic Vapor Phase
Since this method is different from the case of sintering and is produced in a non-equilibrium state, a wide range of growth temperatures can be considered, which is very convenient. The details will be described below.
水素４、酸素６はマスフローコントロラーにより正確に
流量制御される。また、Ｙ（ＤＰＭ）３ｅ、Ｂａ（ＨＦ
Ａ） ７、Ｃｕ （ＨＦ Ａ ） ２ Ｂは、恒温槽
の中で正確に蒸気圧が制御され、マスフローコントロラ
ーにより正確に流量制御された水素ガスを導入すること
により結晶成長室への供給量が決定される。基板３の温
度は高周波誘導によシ熱せられたサセプター２からの熱
で所望の温度にされる。単結晶の薄膜を作成するには基
板温度は３００〜６０Ｃ）Ｃの範囲がこの成長方法では
最適である。The flow rates of hydrogen 4 and oxygen 6 are accurately controlled by a mass flow controller. In addition, Y(DPM)3e, Ba(HF
A) 7, Cu (HF A) 2 B is supplied to the crystal growth chamber by precisely controlling the vapor pressure in a constant temperature bath and introducing hydrogen gas whose flow rate is precisely controlled by a mass flow controller. is determined. The temperature of the substrate 3 is brought to a desired temperature by heat from the susceptor 2 heated by high frequency induction. In order to produce a single-crystal thin film, a substrate temperature in the range of 300 to 60C is optimal for this growth method.
この温度より低い温度では成膜自体は超電導を示すが、
単結晶にはならない。この温度よシ高い温度では成膜自
体は超電導を示すが、多結晶膜となる場合が多い。At temperatures lower than this temperature, the film itself exhibits superconductivity, but
It will not become a single crystal. At temperatures higher than this temperature, the film itself exhibits superconductivity, but it often becomes a polycrystalline film.
第２の実施例を第２図に示す。サセプター３の上流に発
振波長が３００ｎｍ付近のレーザ光入射する窓２１を結
晶成長室１に設け、レーザ光２０を入射する。この場合
、第１の実施例に比べて装置は複雑になるが、有機金属
化合物の特定のボンドで切り放すことができ、基板温度
をさらに低くできる。たとえば１００℃付近まで良好な
単結晶薄膜が容易に作成することができる。これらの方
法で作成された超電導薄膜の成長速度は１μｍ／ｈであ
シ典型的な転移温度は２１０にであった。A second embodiment is shown in FIG. A window 21 through which laser light having an oscillation wavelength of around 300 nm enters is provided in the crystal growth chamber 1 upstream of the susceptor 3, and the laser light 20 enters the window 21. In this case, although the device becomes more complicated than in the first embodiment, it can be cut using a specific bond of the organometallic compound, and the substrate temperature can be further lowered. For example, a good single crystal thin film can be easily produced up to temperatures around 100°C. The growth rate of superconducting thin films produced by these methods was 1 μm/h, and the typical transition temperature was 210°C.
以上述べた方法は水素と酸素の混合雰囲気で作成したも
のであるが、酸素雰囲気はもちろんあこと、Ａｒ、Ｘｅ
、Ｎｅ、Ｋｒのような不活性ガスとの混合雰囲気でも良
好な超電導薄膜が得られるのけ言うまでもない。さらに
Ｙ（イツトリウム）をＳｃ（スカンジウム）やＬａ （
ランタン）、さらにランタン系列の元素（原子番号５７
〜７１）に置き換えてもよい。また、Ｂａ （バリウ
ム）についてもＳｒ（ストロンチウム）、Ｃａ（カルシ
ウム）等のＩＩａ 族元素に置き換えてもよいことはも
ちろんである。また、基板３は、ペロブスカイト構造あ
るいはスピネル構造を有する酸化物、Ｓｉ、Ｇｅあるい
はＩ−Ｖ、ｎ −Ｖｌ化合物半導体等を用いることがで
きる。The method described above was created in a mixed atmosphere of hydrogen and oxygen.
Needless to say, a good superconducting thin film can be obtained even in a mixed atmosphere with an inert gas such as , Ne, or Kr. Furthermore, Y (yttrium) is replaced with Sc (scandium) and La (
Lanthanum), as well as elements in the lanthanum series (atomic number 57
~71) may be replaced. Furthermore, it goes without saying that Ba (barium) may be replaced with IIa group elements such as Sr (strontium) and Ca (calcium). Further, the substrate 3 can be made of an oxide having a perovskite structure or a spinel structure, Si, Ge, IV, n-Vl compound semiconductor, or the like.
発明の効果
本発明にかかる超電導薄膜の製造方法は超電導体を均一
性のよい薄膜化している所に大きな特徴がある。しかも
従来成膜後酸素雰囲気でアニールする必要があったが成
膜中に酸素濃度を容易にコントロールできるため成膜後
のアニールは必要がない。したがって本発明により形成
された超電導薄膜は良好な特性を示すだけでなく、非常
に低価格で作成することができ、工業的価値は高く、実
用的効果は大である。Effects of the Invention The method for producing a superconducting thin film according to the present invention is characterized in that the superconductor is made into a thin film with good uniformity. Moreover, although conventionally it was necessary to anneal in an oxygen atmosphere after film formation, since the oxygen concentration can be easily controlled during film formation, there is no need for annealing after film formation. Therefore, the superconducting thin film formed according to the present invention not only exhibits good properties, but also can be produced at a very low cost, has high industrial value, and has great practical effects.
第１図は本発明の第１の実施例の方法を示す概略図、第
２図は本発明の第２の実施例の方法を示す概略図である
。
１・・・・・・結晶成長室、２・・・・・・サセプター
、３・・・・・・・ 基板、４・・・・・・水素ガス、
６・・・・・・酸素ガス、６・・・・・・Ｙ（Ｃ１１Ｈ
１９ｏ２）３．７・・・・・・Ｂａ（Ｃ２ＨＦ６ｏ２）
２．８・・・・・・Ｃｕ（Ｃ５ＨＦ６ｏ２）２．１０・
・・・・・高周波誘導コイル、２ｏ・・・・・・エキシ
マレーザ。FIG. 1 is a schematic diagram showing a method according to a first embodiment of the present invention, and FIG. 2 is a schematic diagram showing a method according to a second embodiment of the present invention. 1...Crystal growth chamber, 2...Susceptor, 3...Substrate, 4...Hydrogen gas,
6...Oxygen gas, 6...Y(C11H
19o2)3.7...Ba(C2HF6o2)
2.8...Cu(C5HF6o2)2.10.
...High frequency induction coil, 2o...Excimer laser.
Claims (5)
室内に載置されたサセプター上の基板上に超電導薄膜を
作成する際、前記反応ガスの内少なくとも一種は有機金
属化合物を用いる超電導薄膜の製造方法。(1) When a reactive gas is introduced into a crystal growth chamber and a superconducting thin film is created on a substrate on a susceptor placed in the crystal growth chamber, at least one of the reactive gases is a superconducting thin film using an organometallic compound. manufacturing method.
り分解および反応が行われる特許請求の範囲第１項に記
載の超電導薄膜の製造方法。(2) The method for producing a superconducting thin film according to claim 1, wherein the reaction gas is decomposed and reacted by heat generated by high-frequency induction or electric current.
特許請求の範囲第１項に記載の超電導薄膜の製造方法。(3) The method for producing a superconducting thin film according to claim 1, wherein the reaction gas is decomposed and reacted by light.
に記載の超電導薄膜の製造方法。(4) The method for producing a superconducting thin film according to claim 3, wherein the light is an excimer laser.
とＣ、Ｈ、Ｏ、Ｆからなり、結晶成長室内の雰囲気は酸
素雰囲気あるいは酸素と水素からなる雰囲気あるいは酸
素と不活性ガスからなる雰囲気である特許請求の範囲第
１項に記載の超電導薄膜の製造方法。(5) The organometallic compound consists of one of the constituent elements of the superconducting thin film, C, H, O, and F, and the atmosphere in the crystal growth chamber is an oxygen atmosphere, an atmosphere consisting of oxygen and hydrogen, or an atmosphere consisting of oxygen and an inert gas. A method for producing a superconducting thin film according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62309048A JPH01148798A (en) | 1987-12-07 | 1987-12-07 | Production of superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62309048A JPH01148798A (en) | 1987-12-07 | 1987-12-07 | Production of superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01148798A true JPH01148798A (en) | 1989-06-12 |
Family
ID=17988246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62309048A Pending JPH01148798A (en) | 1987-12-07 | 1987-12-07 | Production of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01148798A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294506A (en) * | 1988-05-19 | 1989-11-28 | Nichicon Corp | Production of metallic oxide and thin film thereof with excimer laser |
| JPH01308806A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308804A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308802A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor and device therefor |
| JPH01308807A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH0254769A (en) * | 1988-08-18 | 1990-02-23 | Mitsubishi Metal Corp | Manufacture of thin superconductor film |
-
1987
- 1987-12-07 JP JP62309048A patent/JPH01148798A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294506A (en) * | 1988-05-19 | 1989-11-28 | Nichicon Corp | Production of metallic oxide and thin film thereof with excimer laser |
| JPH01308806A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308804A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH01308802A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor and device therefor |
| JPH01308807A (en) * | 1988-06-06 | 1989-12-13 | Mitsubishi Metal Corp | Production of filmy superconductor |
| JPH0254769A (en) * | 1988-08-18 | 1990-02-23 | Mitsubishi Metal Corp | Manufacture of thin superconductor film |
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