JPH03174304A - Production of thin film of oxide superconductor - Google Patents
Production of thin film of oxide superconductorInfo
- Publication number
- JPH03174304A JPH03174304A JP1310672A JP31067289A JPH03174304A JP H03174304 A JPH03174304 A JP H03174304A JP 1310672 A JP1310672 A JP 1310672A JP 31067289 A JP31067289 A JP 31067289A JP H03174304 A JPH03174304 A JP H03174304A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- thin film
- oxide superconductor
- compd
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- -1 ether compound Chemical class 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 239000012808 vapor phase Substances 0.000 abstract description 2
- 229910002480 Cu-O Inorganic materials 0.000 abstract 3
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 abstract 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 229960002163 hydrogen peroxide Drugs 0.000 abstract 1
- 125000002524 organometallic group Chemical group 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 239000011575 calcium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は酸化物超伝導体薄膜の製造方法に係り、特に気
相で高品質な酸化物超伝導体薄膜を製造する方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing an oxide superconductor thin film, and particularly to a method for producing a high quality oxide superconductor thin film in a gas phase.
近年、高い臨界温度Ｔｃを有する酸化物超伝導体が発見
され、液体窒素温度での利用を０指して精力的な研究が
展開されている。材料的に分類すると、１）ランタン系
超伝導体といわれ、Ｔｃが４０に前後のもの（（Ｌ ａ
、−ｘＢ ａ ｘ）ｔ Ｃｕ ０ｎｅ（Ｌａ、。Ｓ
ｒｘ）、Ｃｕ Ｏ４）、２）イツトリウム系超伝導体と
いわれＴｃが９０に前後のもの［Ｙ Ｂ ａ、Ｃｕ、０
ｅ−ｘ］、３）ビスマス系超伝導体といわれＴｃがｌｌ
ｏＫ前後のもの（Ｂｉ、Ｓｒ。In recent years, oxide superconductors having a high critical temperature Tc have been discovered, and intensive research is being conducted with the aim of utilizing them at liquid nitrogen temperatures. Classified in terms of materials, 1) Lanthanum-based superconductors with a Tc of around 40 ((La
, -xB a x)t Cu 0ne(La,.S
rx), Cu O4), 2) Yttrium-based superconductors with a Tc of around 90 [Y B a, Cu, 0
e-x], 3) It is said to be a bismuth-based superconductor and Tc is ll
Those around OK (Bi, Sr.
Ｃａ、Ｃｕ、Ｏ，］、４）タリウム系超伝導体といわれ
Ｔｃが１２５に前後のもの［Ｔ ＋ ｓ Ｂ ａ ＊
Ｃａ ｍＣｕ、Ｏ，］等が知られている。今後の応用、
例えば配線やセンサーへの応用を考えた場合単結晶と同
等の特性を持つ薄膜を作製する必要がある。−膜の作製
方法としてはスパッタ法、蒸着法、ＣＶＤ法、などが知
られておりそれぞれ長所／失所があるが、ＣＶＤ法は、
ｌ）大面積、均質な６膜が得られる、２）成長速度が速
い、３）組成昆御が容易である、等の利点が得られる可
能性がまり、最近多くの研究がなされている。Ca, Cu, O, ], 4) Thallium-based superconductors with Tc around 125 [T + s B a *
Ca mCu, O, ], etc. are known. Future applications,
For example, when considering applications in wiring and sensors, it is necessary to produce thin films with properties equivalent to those of single crystals. - Sputtering, vapor deposition, CVD, etc. are known methods for producing films, and each has its strengths and weaknesses, but CVD has
Many studies have been conducted recently because of the possibility of obtaining advantages such as 1) large area and homogeneous 6 membranes, 2) high growth rate, and 3) easy composition control.
〔発明が解決しようとする課題Ｊ
しかしながら従来の方法では酸素を導入するσに酸素ガ
スやオゾン等の形で導入していたので。[Problem to be solved by the invention J] However, in the conventional method, oxygen was introduced into σ in the form of oxygen gas, ozone, etc.
成長温度を８００℃程度まで上げないと酸素欠間が生じ
たりして品質のよい薄膜が得られず、またこのように温
度を上げると、薄膜の平坦性が低１したり、基板と薄膜
の界面で相互拡散が起こるなどの問題を有していた。Unless the growth temperature is raised to about 800°C, oxygen vacancies may occur, making it impossible to obtain a high-quality thin film.If the temperature is raised this way, the flatness of the thin film may become poor, or the bond between the substrate and the thin film may deteriorate. There were problems such as mutual diffusion occurring at the interface.
本！＠明の目的は従来技術の問題点を解決し、ＣＶＤ法
により優れた品質の酸化物超伝導体薄膜を得ることにあ
る。Book! The purpose of @Ming is to solve the problems of the prior art and to obtain an oxide superconductor thin film of excellent quality using the CVD method.
［！！ＩｊＩ！を解決するための手段〕上記目的を達成
するために５本発明の酸化物超伝導体薄膜の製造方法は
、反応容器内に、多種類の有機金属化合物と、酸素を含
む化合物とを気相で導入し、これらを熱分解して上記反
応容器内に設置した基板上に酸化物超伝導体薄膜を製造
する方法において、上記酸素を含む化合物として、過酸
化水素、エーテル化合物、アルコール化合物の中から選
択された少なくとも１つの化合物を使用することを特徴
とする。より具体的に述べると、その（１）は酸化物超
伝導体がランタン元素、バリウム元素またはストロンチ
ウム元素、銅元素および酸素元素からなることを特徴と
し、その（２）は酸化物超伝導体がイツトリウム元素、
バリウム元素、銅元素および酸素元素からなることを特
徴とし、その（３）は酸化物超伝導体がビスマス元素、
ストロンチウム元素、カルシウム元素、銅元素、および
酸素元素からなることを特徴とし、その（４）は酸化物
超伝導体がタリウム元素、バリウム元素、カルシウム元
素、銅元素、および酸素元素からなることを特徴とする
酸化物超伝導体薄膜の製造方法である。また（１）から
（４）以外の酸化物超伝導体に対しても適用できるもの
である。[! ! IjI! [Means for Solving the Problems] In order to achieve the above object, the method for producing an oxide superconductor thin film of the present invention includes a reaction vessel in which various organometallic compounds and an oxygen-containing compound are placed in a gas phase. In the method of producing an oxide superconductor thin film on a substrate placed in the reaction vessel by thermally decomposing them, the oxygen-containing compounds include hydrogen peroxide, ether compounds, and alcohol compounds. It is characterized by using at least one compound selected from: To be more specific, (1) is characterized in that the oxide superconductor is composed of lanthanum element, barium element, or strontium element, copper element, and oxygen element, and (2) is characterized in that the oxide superconductor is yztrium element,
The oxide superconductor is characterized by consisting of barium element, copper element and oxygen element.
The oxide superconductor is characterized by being composed of strontium element, calcium element, copper element, and oxygen element, and (4) is characterized in that the oxide superconductor is composed of thallium element, barium element, calcium element, copper element, and oxygen element. This is a method for producing an oxide superconductor thin film. Moreover, it can also be applied to oxide superconductors other than (1) to (4).
本発明は酸素を含む化合物としてこうした化合物を使用
すると、低い基板温度においても基板上での熱分解性が
良く、酸素欠陥が少ない薄膜が得られることを見いだし
たことにより完成に到ったものである。The present invention was completed based on the discovery that when such a compound is used as an oxygen-containing compound, a thin film with good thermal decomposition properties on the substrate and few oxygen defects can be obtained even at low substrate temperatures. be.
表１．２に化合物の具体名を記すが、本発明はこれらに
限定されるものではない。Although specific names of the compounds are listed in Table 1.2, the present invention is not limited thereto.
以下余白。Margin below.
表
エーテル系酸素含有化合物（１）
表
１
エーテル系酸素含有化合物（２）
表
エーテル系酸素含有化合物（３）
表
エーテル系酸素含有化合物（４）
表
エーテル系酸素含有化合物（５）（環状エーテ／１４の
表
２
アルコール系酸素含有化合物（１）
表
アルコール系酸素含有化合物（２）
表
エーテル系酸素含有化合物（３）
表
エーテル系酸素含有化合物（４）
（実施例］
以下実施例に従って詳しく説明する。Table Ether oxygen-containing compounds (1) Table 1 Ether oxygen-containing compounds (2) Table Ether oxygen-containing compounds (3) Table Ether oxygen-containing compounds (4) Table Ether oxygen-containing compounds (5) (cyclic ether/ 14 Table 2 Alcohol-based oxygen-containing compounds (1) Table: Alcohol-based oxygen-containing compounds (2) Table: Ether-based oxygen-containing compounds (3) Table: Ether-based oxygen-containing compounds (4) (Example) A detailed explanation will be given below according to the examples. .
実施例 ｌ
第１図は、本発明をイツトリウム系超伝導体薄膜の製造
に適用した場合の装置の構成を示す系統図である。同図
において、イツトリウム元素を含む原料である固体のＹ
（ｄ ｐｍ）、 （ビスジピバロイルメタナートイツ
トリウム）が封入されているバブラー容器６内に、ガス
流量コントローラー１１により流量調節されたアルゴン
ガス１６をバブリングさせることにより、Ｙ（ｄｐｍ）
、を所要量含むアルゴンガスを形成し、同様にしてバリ
ウム元素を含む原料であるＢａ （ｄｐｍ）、（ビスジ
ピバロイルメタナートバリウム）のＴＨＦ錯体を含む容
器７、および銅元素を含む原料であるＣｕ（ｄｐｍ）、
（ビスジピバロイルメタナート銅）を含む容器内８に流
量制御されたアルゴンガスを導入する。他方過酸化水素
を含む容器９内を通過させた所定流量のアルゴンガスを
導入する。この他に圧力調整のため、流量コントローラ
ーｌ０１１４を介して所要量のアルゴンガスを供給する
。Embodiment l FIG. 1 is a system diagram showing the configuration of an apparatus when the present invention is applied to the production of a yttrium-based superconductor thin film. In the same figure, solid Y, which is a raw material containing yttrium element, is
(d pm), by bubbling argon gas 16 whose flow rate is adjusted by a gas flow controller 11 into a bubbler container 6 in which (yttrium bisdipivaloyl methanate) is sealed.
, a container 7 containing a THF complex of Ba (dpm), (barium bisdipivaloyl methanate), which is a raw material containing barium element, and a raw material containing copper element. Cu (dpm),
Argon gas with a controlled flow rate is introduced into the container 8 containing (copper bisdipivaloyl methanate). On the other hand, a predetermined flow rate of argon gas that has passed through the container 9 containing hydrogen peroxide is introduced. In addition, a required amount of argon gas is supplied via a flow controller 10114 to adjust the pressure.
反応容器内にはチタン酸ストロンチウム（１００）基板
３が基板ホルダ２の上に配置されていて、高周波加熱コ
イル５により所定の温度に加熱され、化学気相反応によ
りイツトリム系酸化物超伝導体薄膜が基板上に形成され
る。基板としては酸化マグネシウム基板等も使用できる
。Inside the reaction vessel, a strontium titanate (100) substrate 3 is placed on a substrate holder 2, heated to a predetermined temperature by a high-frequency heating coil 5, and formed into an yttrium-based oxide superconductor thin film by a chemical vapor phase reaction. is formed on the substrate. A magnesium oxide substrate or the like can also be used as the substrate.
以上説明した酸化物超伝導体薄膜の製造をより具体的に
説明すると、温度２００℃の
Ｙ（ｄｐｍ）、のバブラー容器６を通過した２５０ｃｃ
／分のアルゴンガスと、温度１５０°ＣのＢａ （ｄｐ
ｍ）２ＴＨＦ錯体容器７を通過した２００ｃｃ／分のア
ルゴンガスと、温度１２０℃のＣｕ（ｄｐｍ）、の容器
８を通過した２００ｃｃ／分のアルゴンガスと圧力調整
用のＩＱ／分のアルゴンガスを反応容器ｌ内に導く。同
時に、温度３０’（１：の過酸化水素容器９を通過した
ｌＱ／分の酸素ガス、および圧力調整用のＩＱ／分のア
ルゴンガスを反応容器ｌ内に導き、６００℃の温度に加
熱された基板に吹き付ける。成長速度は１時間当たり５
μｍであり、得られた単結晶薄膜の表面は、良好な鏡面
が形成され結晶性にも問題はなかった。Ｔｃは９０にで
あった。To explain in more detail the production of the oxide superconductor thin film described above, 250 cc of Y (dpm) was passed through a bubbler container 6 at a temperature of 200°C.
/min of argon gas and Ba (dp
m) 200 cc/min of argon gas passed through the 2THF complex container 7, 200 cc/min of argon gas passed through the container 8 of Cu (dpm) at a temperature of 120°C, and argon gas of IQ/min for pressure adjustment. into the reaction vessel l. At the same time, oxygen gas of 1Q/min passed through the hydrogen peroxide container 9 at a temperature of 30' (1:1) and argon gas of IQ/min for pressure adjustment were introduced into the reaction vessel 1 and heated to a temperature of 600°C. The growth rate is 5% per hour.
μm, and the surface of the obtained single crystal thin film had a good mirror surface and no problem with crystallinity. Tc was 90.
実施例 ２〜４
実施例１において過酸化水素の替わりに表３の原料およ
び条件を使用する他は同様にしてイツトリウム系超伝導
体薄膜の成長を行った。いずれの場合においても実施例
１と同様、優れた特性の単結晶薄膜が得られた。Examples 2 to 4 Yttrium-based superconductor thin films were grown in the same manner as in Example 1 except that the raw materials and conditions shown in Table 3 were used instead of hydrogen peroxide. In each case, as in Example 1, single crystal thin films with excellent properties were obtained.
表３ 実施例２〜４での成長条件
実施例 ５
第２図は、本発明をビスマス系超伝導体ＩＷＸの製造に
適用した場合の装置の構成を示す系統図である。同図に
おいて、有機金属化合物としてそれぞれＢ ｉ （Ｃ
Ｈ，）、、 Ｓ ｒ （ｄ ｐｍ）、、 Ｃａ（ｄｐｍ
）、Ｃｕ（ｄｐｍ）、、を容器１６から１９で使用して
いる。ボンベ温度はそれぞれ８゜’Ｃ，２００℃、１８
０℃、＋２０’ｃとした。実施例１と同様過酸化水素を
用いて、基板温度６５０℃で成長を行ったところ、１時
間当たり１０μｍの速度で成長できた。得られた単結晶
薄膜の表面は、良好な鏡面が形成され結晶性にも問題は
なかった。Ｔｃはｌｌ０Ｋであった。Table 3 Growth Condition Example 5 for Examples 2 to 4 FIG. 2 is a system diagram showing the configuration of an apparatus when the present invention is applied to the production of bismuth-based superconductor IWX. In the figure, B i (C
H,),, S r (d pm),, Ca (dpm
), Cu (dpm), are used in containers 16 to 19. The cylinder temperatures were 8°C, 200°C, and 18°C, respectively.
The temperature was 0°C and +20'c. When growth was performed at a substrate temperature of 650° C. using hydrogen peroxide as in Example 1, growth was possible at a rate of 10 μm per hour. The surface of the obtained single crystal thin film had a good mirror surface and no problem in crystallinity. Tc was 110K.
実施例 ６
実施例５において以下の原料化合物を使用する他は同様
にしてタリウム系の酸化物超伝導体薄膜の成長を行った
。Ｔｉ （ＣＨ，）、、Ｂａ（ｄｐｍ）２ＴＨＦ錯体
、Ｃａ（ｄｐｍ）、Ｃｕ（ｄｐｍ）。Example 6 A thallium-based oxide superconductor thin film was grown in the same manner as in Example 5 except that the following raw material compounds were used. Ti (CH,), Ba (dpm)2THF complex, Ca (dpm), Cu (dpm).
を容器１６から１９で使用した。ボンベ温度はそれぞれ
８０℃、２００℃、１８０’ｃ、１２０℃とした。実施
例１と同様過酸化水素を用いて、基板温度６５０℃で成
長を行ったところ、１時間当たりｌｏＩＬｍの速度で成
長できた。得られた単結晶薄膜の表面は、良好な鏡面が
形成され結晶性にも問題はなかった。Ｔｃは１２０にで
あった。was used in containers 16 to 19. The bomb temperatures were 80°C, 200°C, 180'C, and 120°C, respectively. When growth was performed at a substrate temperature of 650° C. using hydrogen peroxide as in Example 1, growth was possible at a rate of loILm per hour. The surface of the obtained single crystal thin film had a good mirror surface and no problem in crystallinity. Tc was 120.
実施例 ７
実施例５において以下の原料化合物を使用する他は同様
にしてランタン系の酸化物超伝導体薄膜の成長を行った
。Ｌａ（Ｃ１Ｈ１）、、Ｂａ （ｄｐｍ）２ＴＨＦ錯体
、Ｃｕ （ｄｐｍ）ｊを容器１６から１９で使用した。Example 7 A lanthanum-based oxide superconductor thin film was grown in the same manner as in Example 5 except that the following raw material compounds were used. La(C1H1), Ba(dpm)2THF complex, Cu(dpm)j were used in vessels 16-19.
ボンベ温度はそれぞれ３００℃、２００℃、１８０℃、
１２０℃とした。実施例１と同様過酸化水素を用いて、
基板温度６５０℃で成長を行ったところ、１時間当たり
５μｍの速度で成長できた。得られた単結晶薄膜の表面
は、良好な鏡面が形成され結晶性にも問題はなかった。Cylinder temperature is 300℃, 200℃, 180℃, respectively.
The temperature was 120°C. Using hydrogen peroxide as in Example 1,
When growth was performed at a substrate temperature of 650° C., growth was possible at a rate of 5 μm per hour. The surface of the obtained single crystal thin film had a good mirror surface and no problem in crystallinity.
Ｔｃは４０にであった。Tc was 40.
以上、本発明の実施例を具体的に説明したが、本発明は
上記実施例に限定されるものではなく、その要旨を逸脱
しない範囲において種々変更可能であることは勿論であ
る。Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and it goes without saying that various changes can be made without departing from the spirit of the invention.
〔発明の効果Ｊ
以上説明したように、本発明に係る酸化物超伝導体薄膜
の製造方法によれば、酸素を含有した特定の化合物を使
用するので、低い基板温度で高品質の単結晶薄膜が得ら
れる利点がある。[Effect of the invention J As explained above, according to the method for producing an oxide superconductor thin film according to the present invention, a specific compound containing oxygen is used, so that a high quality single crystal thin film can be produced at a low substrate temperature. There are advantages that can be obtained.
第１図は、本発明の実施例１〜４において用いたイツト
リウム系酸化物超伝導体薄膜の製造装置の構成を示す系
統図、第２図は、実施例５〜７において用いた酸化物超
伝導体薄膜の製造装置の構成を示す系統図である。
ｌ・・・反応容器
２・・・基板ホルダ
３・・・基板
４・・・熱電対
５・・・高周波加熱コイル
６．７．８．１８．１９・・・有機金属化合物容器９．
２０・・・酸素含有化合物容器
１０．１１，１２．１３．１４．１５．２１．２２．２
３．２４．２５．２６．２７・・・ガス流量コントロー
ラーFIG. 1 is a system diagram showing the configuration of the manufacturing apparatus for the yttrium-based oxide superconductor thin film used in Examples 1 to 4 of the present invention, and FIG. FIG. 1 is a system diagram showing the configuration of a conductor thin film manufacturing apparatus. l...Reaction container 2...Substrate holder 3...Substrate 4...Thermocouple 5...High frequency heating coil 6.7.8.18.19...Organometallic compound container 9.
20... Oxygen-containing compound container 10.11, 12.13.14.15.21.22.2
3.24.25.26.27...Gas flow controller
Claims (2)
含む化合物とを気相で導入し、これらを熱分解して上記
反応容器内に設置した基板上に酸化物超伝導体薄膜を製
造する方法において、上記酸素を含む化合物として、過
酸化水素、エーテル化合物、アルコール化合物の中から
選択された少なくとも１つの化合物を使用することを特
徴とする酸化物超伝導体薄膜の製造方法。1. A variety of organometallic compounds and a compound containing oxygen are introduced in a gas phase into a reaction vessel, and these are thermally decomposed to produce an oxide superconductor thin film on a substrate placed in the reaction vessel. A method for producing an oxide superconductor thin film, characterized in that at least one compound selected from hydrogen peroxide, an ether compound, and an alcohol compound is used as the oxygen-containing compound.
ウム元素またはストロンチウム元素・銅元素・酸素元素
、（２）イットリウム元素・バリウム元素・銅元素・酸
素元素、（３）ビスマス元素・ストロンチウム元素・カ
ルシウム元素・銅元素・酸素元素、または（４）タリウ
ム元素・バリウム元素・カルシウム元素・銅元素・酸素
元素からなることを特徴とする請求項１記載の酸化物超
伝導体薄膜の製造方法。2. The above oxide superconductor includes (1) lanthanum element, barium element or strontium element, copper element, oxygen element, (2) yttrium element, barium element, copper element, oxygen element, (3) bismuth element, strontium element, 2. The method for producing an oxide superconductor thin film according to claim 1, characterized in that it consists of calcium element, copper element, oxygen element, or (4) thallium element, barium element, calcium element, copper element, and oxygen element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1310672A JPH03174304A (en) | 1989-12-01 | 1989-12-01 | Production of thin film of oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1310672A JPH03174304A (en) | 1989-12-01 | 1989-12-01 | Production of thin film of oxide superconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03174304A true JPH03174304A (en) | 1991-07-29 |
Family
ID=18008068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1310672A Pending JPH03174304A (en) | 1989-12-01 | 1989-12-01 | Production of thin film of oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03174304A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5458086A (en) * | 1993-10-13 | 1995-10-17 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
| US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
| CN103771852A (en) * | 2014-01-06 | 2014-05-07 | 西安理工大学 | Preparation method of yttrium-group high-temperature superconducting thin film |
-
1989
- 1989-12-01 JP JP1310672A patent/JPH03174304A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5686151A (en) * | 1993-09-14 | 1997-11-11 | Kabushiki Kaisha Toshiba | Method of forming a metal oxide film |
| US5458086A (en) * | 1993-10-13 | 1995-10-17 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
| USRE36295E (en) * | 1993-10-13 | 1999-09-14 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
| CN103771852A (en) * | 2014-01-06 | 2014-05-07 | 西安理工大学 | Preparation method of yttrium-group high-temperature superconducting thin film |
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