JPH01148796A - Production of oxide superconductor crystal - Google Patents
Production of oxide superconductor crystalInfo
- Publication number
- JPH01148796A JPH01148796A JP62304633A JP30463387A JPH01148796A JP H01148796 A JPH01148796 A JP H01148796A JP 62304633 A JP62304633 A JP 62304633A JP 30463387 A JP30463387 A JP 30463387A JP H01148796 A JPH01148796 A JP H01148796A
- Authority
- JP
- Japan
- Prior art keywords
- oxide superconductor
- flux
- crystal
- superconductor crystal
- naf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 239000002887 superconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000004907 flux Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910020640 KF—NaF Inorganic materials 0.000 claims abstract description 6
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims abstract description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 3
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 3
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 3
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract 2
- 229910052775 Thulium Inorganic materials 0.000 claims abstract 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract 2
- 229910052727 yttrium Inorganic materials 0.000 claims abstract 2
- 239000007788 liquid Substances 0.000 claims description 12
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910021267 NaF—CaF2 Inorganic materials 0.000 abstract description 3
- 229910001632 barium fluoride Inorganic materials 0.000 abstract description 3
- 150000002222 fluorine compounds Chemical class 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 17
- 238000010587 phase diagram Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、多元系酸化物超電導体結晶の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for producing a multi-component oxide superconductor crystal.
（従来の技術）
最近、液体窒素温度程度の高温で超電導を示す高温超電
導体材料として、ペロブスカイト構造の多元系酸化物超
電導体が注目されている。これまでに報告されている酸
化物超電導体の代表的なものは、ＹＢａ Ｃｕ Ｏ
や２ ３７−δ
（Ｌａ、Ｂａ） ２Ｃｕ３Ｏ７−δ等である。これら
４−ｙ
の酸化物超電導材料は、焼結法、蒸着法、スパッタ法等
により得られている。(Prior Art) Recently, multi-component oxide superconductors with a perovskite structure have attracted attention as high-temperature superconductor materials that exhibit superconductivity at temperatures as high as liquid nitrogen temperatures. Typical oxide superconductors reported so far are YBa Cu O
and 2 37-δ (La, Ba) 2Cu3O7-δ. These 4-y oxide superconducting materials are obtained by sintering, vapor deposition, sputtering, or the like.
今後これらの酸化物超電導体を具体的な素子に応用する
に当たって、超電導転移温度を高く安定に保ち、また大
きい臨界電流を得、素子特性の均一性、信頼性を優れた
ものとするためには、ある程度大きい面積の単結晶基板
或いは単結晶層として実現することが強く望まれる。こ
の種の酸化物超電導体の製造には、誘電体酸化物単結晶
の場合と同様にチョクラルスキー法（ＣＺ法）を用いる
ことが考えられる。しかし、結晶材料融液を用いるＣＺ
法では非常に高い温度での結晶成長になり、酸化物超電
導体は相転移を生じるため、所望の超電導体を得ること
ができない。When applying these oxide superconductors to specific devices in the future, it is necessary to maintain a high and stable superconducting transition temperature, obtain a large critical current, and achieve excellent uniformity and reliability of device characteristics. It is strongly desired to realize this as a single-crystal substrate or a single-crystal layer with a relatively large area. For the production of this type of oxide superconductor, it is possible to use the Czochralski method (CZ method) as in the case of dielectric oxide single crystals. However, CZ using a crystalline material melt
In this method, crystal growth occurs at extremely high temperatures, and the oxide superconductor undergoes a phase transition, making it impossible to obtain the desired superconductor.
（発明が解決しようとする問題点）
以上のように、多元系酸化物超電導材料の素子応用に当
たっては、その単結晶化が望まれるが、これまでそのよ
うな酸化物単結晶を形成する有効な方法は提案されてい
ない。(Problems to be Solved by the Invention) As described above, when applying multi-component oxide superconducting materials to devices, it is desirable to make them into single crystals, but so far there has been no effective way to form such oxide single crystals. No method has been proposed.
本発明は上記した点に鑑み、多元系酸化物超電導体の結
晶の製造方法を提供することを目的とする。In view of the above-mentioned points, an object of the present invention is to provide a method for producing a crystal of a multi-component oxide superconductor.
Ｃ発明の構成］
（問題点を解決するための手段）
本発明の方法は、アルカリ金属弗化物を含む２元系酸化
物をフラックスとして用いた液）■成長法（キボラス法
）により多元系酸化物超電導体結晶を製造することを特
徴とする。C Structure of the Invention] (Means for Solving the Problems) The method of the present invention is a multi-component oxidation process using a solution (liquid) growth method (quiboras method) using a binary oxide containing an alkali metal fluoride as a flux. It is characterized by producing a physical superconductor crystal.
具体的に本発明で用いるフラックスとしては、ＫＦ−Ｂ
ａＦ３系混合液混合液Ｆ−ＣａＦ２系混合液、ＫＦ−Ｎ
ａＦ系混合液、ＬｉＦ−ＫＦ系混合液等がある。Specifically, the flux used in the present invention is KF-B.
aF3-based mixed liquid mixed liquid F-CaF2-based mixed liquid, KF-N
There are aF-based mixed liquids, LiF-KF-based mixed liquids, etc.
（作用）
本発明によれば、アルカリ金属弗化物を含む２元系酸化
物をフラックスとする牛ポラス法を用いることにより、
低い温度で多元系酸化物超電導体結晶の成長が可能であ
り、超電導体の相転移が効果的に防止され、良好な多元
系酸化物超電導体結晶を得ることができる。(Function) According to the present invention, by using the Ushiporas method using a binary oxide containing an alkali metal fluoride as a flux,
Multi-component oxide superconductor crystals can be grown at low temperatures, phase transition of the superconductor is effectively prevented, and good multi-component oxide superconductor crystals can be obtained.
（実施例）
以下、本発明の詳細な説明する。実施例では、ＹＢａ
Ｃｕ Ｏ結晶の製造法を説明す２ ３７−δ
る。(Example) The present invention will be described in detail below. In the example, YBa
A method for producing CuO crystals will be explained below.
第１図は、その結晶の引上げ装置を示す。第１図におい
て１は、アルミナシールド材であり、この中に白金ヒー
タ２が配置され、その中心部に白金ルツボ３が支持台４
上に配置されている。支持台４は炉外部止つながる支持
棒５と一体化され、回転可能になっている。６は熱電対
である。ルツボ３内には、ＫＦ−ＢａＦ２混合液（ＫＦ
が７０モル％以下）からなるフラックスを形成し、これ
に、ＹＢａ Ｃｕ Ｏを得るに必要な材料を２ ３
７−δ
溶解した溶液７を形成する。FIG. 1 shows the crystal pulling apparatus. In FIG. 1, reference numeral 1 denotes an alumina shield material, in which a platinum heater 2 is arranged, and a platinum crucible 3 is placed in the center of the material on a support base 4.
placed above. The support stand 4 is integrated with a support rod 5 that is connected to the outside of the furnace, and is rotatable. 6 is a thermocouple. Inside the crucible 3 is a KF-BaF2 mixed solution (KF
70 mol% or less), and add 2 3 of the materials necessary to obtain YBaCuO to this flux.
7-δ Dissolved to form solution 7.
第２図は、Ｋ Ｆ −Ｂａ Ｆ２系の相図であり、この
系で適当なモル比を選ぶことにより、９００℃程度で液
相状態が得られる。従ってこの系をフラックスとして用
いることにより、比較的低温でＹ−Ｂａ −Ｃｕ −０
系結晶を引上げるための溶液を得ることが可能である。FIG. 2 is a phase diagram of the K F -Ba F2 system, and by selecting an appropriate molar ratio in this system, a liquid phase state can be obtained at about 900°C. Therefore, by using this system as a flux, Y-Ba-Cu-0
It is possible to obtain a solution for pulling system crystals.
このようにしてルツボ３内に所望の溶液７を形成し、こ
れを１２００〜１３００℃で約１０時間放置した後、溶
液温度を下げて約９００〜１０００℃に設定する。そし
てこの溶液７に引上げ軸８の先端に取付けられたＹＣｕ
Ｏ単結晶からなる種子結晶を浸し、十分にこの種子結
晶を馴染ませる。その後、０．１〜０．５℃／ｈという
小さい冷却速度で結晶９を引上げる。この引上げに際し
、溶液７の表面にはガス導入パイプ１２を介して酸素ガ
スを１００ｍノ／ｎ＋ｉｎ程度供給する。In this way, a desired solution 7 is formed in the crucible 3, and after being left at 1200 to 1300°C for about 10 hours, the solution temperature is lowered and set to about 900 to 1000°C. Then, the YCu plate attached to the tip of the pulling shaft 8 is added to this solution 7.
A seed crystal consisting of an O single crystal is immersed in the solution, and the seed crystal is sufficiently absorbed. Thereafter, the crystal 9 is pulled up at a low cooling rate of 0.1 to 0.5°C/h. During this pulling, oxygen gas is supplied to the surface of the solution 7 through the gas introduction pipe 12 at a rate of approximately 100 m/n+in.
１０は内部観察用光入射窓であり、１１は内部観察窓で
ある。10 is a light entrance window for internal observation, and 11 is an internal observation window.
こうしてこの実施例によれば、キポラス法によって比較
的低温で、従って相転移を生じることなく、良質のＹＢ
ａ Ｃｕ Ｏ結晶を引上げる２ ３７−δ
ことができる。この場合、結晶引上げに際して酸素ガス
を供給することにより、溶液中および成長結晶中の酸素
欠陥の発生を防止することができる。Thus, according to this example, good quality YB can be obtained by the Kiporus method at a relatively low temperature and therefore without phase transition.
a CuO crystal can be pulled up 237-δ. In this case, by supplying oxygen gas during crystal pulling, it is possible to prevent the generation of oxygen defects in the solution and in the grown crystal.
ＫＦ−ＢａＦ２に更にＢａＯを加えた混合液をフラック
スとして用いても、同様の結晶成長が可能である。Similar crystal growth is also possible by using a mixture of KF-BaF2 and BaO as the flux.
次に、フラックスとして、ＮａＦ−ＣａＦ２混合液を用
いた場合を説明する。第３図は、ＮａＦＣａＦ２系の相
図であり、この系で適当なモル比を選ぶことにより、や
はり９００℃程度で液相状態が得られる。このＮａＦＣ
ａＦ２混合液（Ｎａ Ｆが４０〜８０モル％）をフラッ
クスとして用いて先の実施例と同様に必要な原料を溶解
した溶液を形成し、１２００〜１３００℃で約１０時間
放置した後、溶液温度を下げて９００〜１０００℃に設
定する。この後先の実施例と同様にして、ＹＢａ Ｃ
ｕ Ｏ結晶を引上げる。Next, a case will be described in which a NaF-CaF2 mixed solution is used as the flux. FIG. 3 is a phase diagram of the NaFCaF2 system, and by selecting an appropriate molar ratio in this system, a liquid phase state can also be obtained at about 900°C. This NaFC
Using an aF2 mixture (40 to 80 mol% NaF) as a flux, a solution containing the necessary raw materials was formed in the same manner as in the previous example, and after being left at 1200 to 1300 °C for about 10 hours, the solution temperature was Lower the temperature and set to 900-1000℃. After this, in the same manner as in the previous example, YBa C
u Pull up the O crystal.
２ ３７−δ
この実施例によっても先の実施例と同様、良質のＹＢａ
Ｃｕ Ｏ結晶を得ることができる。2 37-δ In this example, as well as in the previous example, good quality YBa
CuO crystals can be obtained.
２ ３７−δ
次に、フラックスとして、ＫＦ−ＮａＦ混合液を用いた
場合を説明する。第４図は、ＫＦ−ＮａＦ系の相図であ
り、この系で適当なモル比を選ぶことにより、やはり９
００℃程度で液相状態が得られる。二〇ＫＦ−ＮａＦ混
合液（Ｎａ Ｆが７０モル％以下）をフラックスとして
用いて先の実施例と同様に必要な原料を溶解した溶液を
形成し、１２００〜１３００℃で約１０時間放置した後
、溶液温度を下げて９００〜１０００℃に設定する。こ
の後先の実施例と同様にして、ＹＢａ Ｃｕ Ｏ結
晶を引上げる。2 37-δ Next, a case will be described in which a KF-NaF mixed liquid is used as the flux. Figure 4 is a phase diagram of the KF-NaF system, and by selecting an appropriate molar ratio in this system, 9
A liquid phase state is obtained at about 00°C. 20 Using a KF-NaF mixed solution (NaF is 70 mol% or less) as a flux, a solution containing the necessary raw materials was formed in the same manner as in the previous example, and after being left at 1200 to 1300°C for about 10 hours. , lower the solution temperature and set it to 900-1000°C. After this, the YBa Cu O crystal is pulled up in the same manner as in the previous example.
２ ３７−δ
この実施例によっても先の実施例と同様、良質のＹＢａ
Ｃｕ Ｏ結晶を得ることができる。2 37-δ In this example, as well as in the previous example, good quality YBa
CuO crystals can be obtained.
次に、フラックスとして、Ｌｉ Ｆ−ＫＦ混合液を用い
た場合を説明する。第５図は、Ｌｉ Ｆ−ＫＦ系の相図
であり、この系で適当なモル比を選ぶことにより、やは
り９００℃程度で液相状態が得られる。このＬｉ Ｆ−
ＫＦ混合液をフラックスとして用いて先の実施例と同様
に必要な原料を溶解した溶液を形成し、１２００〜１３
００℃で約１０時間放置した後、溶液温度を下げて９０
０〜１０００℃に設定する。この後先の実施例と同様に
して、ＹＢａ Ｃｕ Ｏ結晶を引上げる。Next, a case will be described in which a Li F-KF mixed solution is used as the flux. FIG. 5 is a phase diagram of the Li F-KF system, and by selecting an appropriate molar ratio in this system, a liquid phase state can also be obtained at about 900°C. This Li F-
Using the KF mixture as a flux, a solution containing the necessary raw materials was formed in the same manner as in the previous example, and the solution was 1200-13
After leaving it at 00°C for about 10 hours, lower the solution temperature to 90°C.
Set at 0-1000°C. After this, the YBa Cu O crystal is pulled up in the same manner as in the previous example.
２ ３７−δ
この実施例によっても先の実施例と同様、良質のＹＢａ
Ｃｕ Ｏ結晶を得る４とができる。2 37-δ In this example, as well as in the previous example, good quality YBa
4 to obtain CuO crystals.
２ ３ ７−δ
以上の実施例では、ＹＢａ Ｃｕ Ｏ結晶２ ３７
−δ
を引上げる場合を説明したが、Ｙの代わりにＹｂ。2 3 7-δ In the above examples, YBa Cu O crystal 2 37
We have explained the case where -δ is raised, but Yb is used instead of Y.
Ｈｏ、Ｄｙ、Ｅｕ、Ｅｒ、Ｔｔａ、Ｌｕなど他の希土類
元素が入った酸化物超電導体結晶の場合にも本発明は有
効であり、また、Ｓｃ −Ｂａ −Ｃｕ −０系、Ｓｒ
−Ｌａ −Ｃｕ−０系、更にＳ「をＢａ。The present invention is also effective in the case of oxide superconductor crystals containing other rare earth elements such as Ho, Dy, Eu, Er, Tta, and Lu;
-La-Cu-0 system, and further S' and Ba.
Ｃａなどで置換した系等、他のペロブスカイト構造を有
する多元系酸化物超電導体結晶を成長させる場合にも本
発明は有効である。また実施例では結晶引上げを説明し
たが、本発明は多元系酸化物超電導体のエピタキシャル
成長にも有効である。The present invention is also effective when growing multi-component oxide superconductor crystals having other perovskite structures, such as those substituted with Ca or the like. Furthermore, although crystal pulling has been explained in the embodiment, the present invention is also effective for epitaxial growth of multi-component oxide superconductors.
その池水発明はその趣旨を逸脱しない範囲で種々変形し
て実施することができる。The pond water invention can be implemented with various modifications without departing from the spirit thereof.
［発明の効果］
以上述べたように本発明によれば、アルカリ金属弗化物
を含む２元系酸化物をフラックスとするキポラス法によ
り、多元系酸化物超電導体の良質の結晶を得ることがで
きる。[Effects of the Invention] As described above, according to the present invention, high-quality crystals of a multi-component oxide superconductor can be obtained by the Kiporas method using a binary oxide containing an alkali metal fluoride as a flux. .
第１図は本発明の一実施例のＹ−Ｂａ−Ｃｕ−０系結晶
の引上げ装置を示す図、第２図は、ＫＦ−Ｂａ Ｆ２系
の相図、第３図は、Ｎａ −ｃａ Ｆ２系の相図、第４
図は、ＫＦ−ＮａＦ系の相図、第５図は、ＬＩ Ｆ−Ｋ
Ｆ系の相図である。
１・・・アルミナシールド材、２・・・白金ヒータ、３
・・・白金ルツボ、４・・・支持台、５・・・支持棒、
６・・・熱電対、７・・・フラックスを含む溶液、８・
・・引上げ軸、９・・・ＹＢａ Ｃｕ Ｏ結晶、１
０・・・内部観察２ ３７−δ
用光照射窓、１１・・・内部観察窓、１２・・・ガス導
入バイブ。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
ＮａＦ−ＣａＦ２
第３図
第４図FIG. 1 is a diagram showing a pulling device for Y-Ba-Cu-0 system crystal according to an embodiment of the present invention, FIG. 2 is a phase diagram of KF-Ba F2 system, and FIG. Phase diagram of the system, 4th
The figure shows the phase diagram of the KF-NaF system, and Figure 5 shows the LIF-K
It is a phase diagram of F system. 1... Alumina shield material, 2... Platinum heater, 3
...Platinum crucible, 4...Support stand, 5...Support rod,
6... Thermocouple, 7... Solution containing flux, 8...
... Pulling shaft, 9 ... YBa Cu O crystal, 1
0... Light irradiation window for internal observation 2 37-δ, 11... Internal observation window, 12... Gas introduction vibrator. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 NaF-CaF2 Figure 3 Figure 4
Claims (6)
クスとして用いた液相成長法により多元系酸化物超電導
体結晶を成長させることを特徴とする酸化物超電導体結
晶の製造方法。(1) A method for producing an oxide superconductor crystal, which comprises growing a multi-component oxide superconductor crystal by a liquid phase growth method using a binary oxide containing an alkali metal fluoride as a flux.
Ｈｏ、Ｄｙ、Ｅｕ、Ｅｒ、Ｔｍ、Ｌｕから選ばれた一種
〕である特許請求の範囲第１項記載の酸化物超電導体結
晶の製造方法。(2) The multi-component oxide superconductor is ABa_2Cu_3O_7_-_δ (A is Y, Yb,
The method for producing an oxide superconductor crystal according to claim 1, wherein the oxide superconductor crystal is one selected from Ho, Dy, Eu, Er, Tm, and Lu.
ある特許請求の範囲第１項記載の酸化物超電導体結晶の
製造方法。(3) The method for producing an oxide superconductor crystal according to claim 1, wherein the flux is a KF-BaF_2 mixed liquid.
である特許請求の範囲第１項記載の酸化物超電導体結晶
の製造方法。(4) The method for producing an oxide superconductor crystal according to claim 1, wherein the flux is a NaF-CaF_2-based mixed liquid.
特許請求の範囲第１項記載の酸化物超電導体結晶の製造
方法。(5) The method for producing an oxide superconductor crystal according to claim 1, wherein the flux is a KF-NaF mixed liquid.
特許請求の範囲第１項記載の酸化物超電導体結晶の製造
方法。(6) The method for producing an oxide superconductor crystal according to claim 1, wherein the flux is a LiF-KF mixed liquid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304633A JP2672533B2 (en) | 1987-12-03 | 1987-12-03 | Method for producing oxide superconductor crystal |
| US07/205,177 US5162297A (en) | 1987-06-11 | 1988-06-10 | Liquid phase epitaxial growth of high temperature superconducting oxide wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62304633A JP2672533B2 (en) | 1987-12-03 | 1987-12-03 | Method for producing oxide superconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01148796A true JPH01148796A (en) | 1989-06-12 |
| JP2672533B2 JP2672533B2 (en) | 1997-11-05 |
Family
ID=17935385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62304633A Expired - Fee Related JP2672533B2 (en) | 1987-06-11 | 1987-12-03 | Method for producing oxide superconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2672533B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043319A (en) * | 1988-08-03 | 1991-08-27 | General Electric Company | Synthesis of lanthanum-alkaline earth-copper-oxygen superconductive material |
| US5602081A (en) * | 1993-05-10 | 1997-02-11 | International Superconductivity Technology Center | Method of preparing metal oxide crystal |
| US5962374A (en) * | 1997-02-21 | 1999-10-05 | International Superconductivity Technology Center | Preparation of oxide crystals |
-
1987
- 1987-12-03 JP JP62304633A patent/JP2672533B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| JAPANESE JOURNAL OF APPLIED PHYSICS=1987 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043319A (en) * | 1988-08-03 | 1991-08-27 | General Electric Company | Synthesis of lanthanum-alkaline earth-copper-oxygen superconductive material |
| US5602081A (en) * | 1993-05-10 | 1997-02-11 | International Superconductivity Technology Center | Method of preparing metal oxide crystal |
| US5962374A (en) * | 1997-02-21 | 1999-10-05 | International Superconductivity Technology Center | Preparation of oxide crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2672533B2 (en) | 1997-11-05 |
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