JPH01147056A - 真空薄膜形成装置 - Google Patents
真空薄膜形成装置Info
- Publication number
- JPH01147056A JPH01147056A JP30402987A JP30402987A JPH01147056A JP H01147056 A JPH01147056 A JP H01147056A JP 30402987 A JP30402987 A JP 30402987A JP 30402987 A JP30402987 A JP 30402987A JP H01147056 A JPH01147056 A JP H01147056A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- thin film
- vacuum
- orifice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000001704 evaporation Methods 0.000 claims abstract description 32
- 230000008020 evaporation Effects 0.000 claims abstract description 31
- 238000005192 partition Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000638 solvent extraction Methods 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30402987A JPH01147056A (ja) | 1987-11-30 | 1987-11-30 | 真空薄膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30402987A JPH01147056A (ja) | 1987-11-30 | 1987-11-30 | 真空薄膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01147056A true JPH01147056A (ja) | 1989-06-08 |
| JPH0246666B2 JPH0246666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-10-16 |
Family
ID=17928207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30402987A Granted JPH01147056A (ja) | 1987-11-30 | 1987-11-30 | 真空薄膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01147056A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266161A (ja) * | 1987-12-04 | 1990-03-06 | Res Dev Corp Of Japan | 真空蒸着装置 |
| US5077875A (en) * | 1990-01-31 | 1992-01-07 | Raytheon Company | Reactor vessel for the growth of heterojunction devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153775A (ja) * | 1982-03-08 | 1983-09-12 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜の製造方法 |
-
1987
- 1987-11-30 JP JP30402987A patent/JPH01147056A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153775A (ja) * | 1982-03-08 | 1983-09-12 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜の製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266161A (ja) * | 1987-12-04 | 1990-03-06 | Res Dev Corp Of Japan | 真空蒸着装置 |
| US5077875A (en) * | 1990-01-31 | 1992-01-07 | Raytheon Company | Reactor vessel for the growth of heterojunction devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0246666B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-10-16 |