JPH01134344A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPH01134344A
JPH01134344A JP29246887A JP29246887A JPH01134344A JP H01134344 A JPH01134344 A JP H01134344A JP 29246887 A JP29246887 A JP 29246887A JP 29246887 A JP29246887 A JP 29246887A JP H01134344 A JPH01134344 A JP H01134344A
Authority
JP
Japan
Prior art keywords
bus line
gate bus
line
breaking
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29246887A
Inventor
Mikio Katayama
Hiroshi Morimoto
Yasunori Shimada
Hirohisa Tanaka
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP29246887A priority Critical patent/JPH01134344A/en
Priority claimed from US07/273,251 external-priority patent/US5075674A/en
Publication of JPH01134344A publication Critical patent/JPH01134344A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent a gate bus from breaking and decreasing in resistance by forming a gate bus line in multilayered structure of conductive thin films except at the intersection part of the gate and bus line of a thin film transistor(TR) array provided in a matrix on an insulating substrate.
CONSTITUTION: A by-pass line 2 is formed in parallel to a gate bus line 1 and connected through a through hole 3 of an inter-layer insulating film to form a laminate body of thin conductor films. No by-pass part is provided to a cross part 4 where the source bus line 5 is crossed so as to decrease the number of crosses. The gate bus line 1 is a thin conductor film consisting of ≥2 layers of titanium, tantalum, etc. This constitution decreases the possibility of the breaking of a gate bus and reduces the line resistance to improve the picture quality of an active matrix display due to the breaking of the gate bus line.
COPYRIGHT: (C)1989,JPO&Japio
JP29246887A 1987-11-19 1987-11-19 Active matrix substrate Pending JPH01134344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29246887A JPH01134344A (en) 1987-11-19 1987-11-19 Active matrix substrate

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP29246887A JPH01134344A (en) 1987-11-19 1987-11-19 Active matrix substrate
US07/273,251 US5075674A (en) 1987-11-19 1988-11-18 Active matrix substrate for liquid crystal display
DE19883888465 DE3888465D1 (en) 1987-11-19 1988-11-21 Liquid crystal active matrix substrate.
EP19880310967 EP0318224B1 (en) 1987-11-19 1988-11-21 An active matrix substrate for liquid crystal display
DE19883888465 DE3888465T2 (en) 1987-11-19 1988-11-21 Liquid crystal active matrix substrate.

Publications (1)

Publication Number Publication Date
JPH01134344A true JPH01134344A (en) 1989-05-26

Family

ID=17782202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29246887A Pending JPH01134344A (en) 1987-11-19 1987-11-19 Active matrix substrate

Country Status (1)

Country Link
JP (1) JPH01134344A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03153218A (en) * 1989-11-10 1991-07-01 Nec Corp Thin film field effect transistor element array
JPH0566416A (en) * 1991-09-05 1993-03-19 Koudo Eizou Gijutsu Kenkyusho:Kk Liquid crystal display body
US6352911B1 (en) 1999-02-26 2002-03-05 Nec Corporation Thin-film transistor array and method for producing the same
US7102169B2 (en) 1996-12-30 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100415A (en) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp Matrix type liquid crystal display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100415A (en) * 1982-11-30 1984-06-09 Mitsubishi Electric Corp Matrix type liquid crystal display device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03153218A (en) * 1989-11-10 1991-07-01 Nec Corp Thin film field effect transistor element array
JPH0566416A (en) * 1991-09-05 1993-03-19 Koudo Eizou Gijutsu Kenkyusho:Kk Liquid crystal display body
US8497508B2 (en) 1996-12-30 2013-07-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7102169B2 (en) 1996-12-30 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE43782E1 (en) 1996-12-30 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having wiring layers which are connected over multiple contact parts
US7323717B2 (en) 1996-12-30 2008-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8168975B2 (en) 1996-12-30 2012-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7550325B2 (en) 1996-12-30 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an active matrix display device
US6352911B1 (en) 1999-02-26 2002-03-05 Nec Corporation Thin-film transistor array and method for producing the same
US8139001B2 (en) 2003-04-25 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US8018403B2 (en) 2003-04-25 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device
US7250720B2 (en) 2003-04-25 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device
US8674908B2 (en) 2003-04-25 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device

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