JPH0566416A - Liquid crystal display body - Google Patents
Liquid crystal display bodyInfo
- Publication number
- JPH0566416A JPH0566416A JP22598191A JP22598191A JPH0566416A JP H0566416 A JPH0566416 A JP H0566416A JP 22598191 A JP22598191 A JP 22598191A JP 22598191 A JP22598191 A JP 22598191A JP H0566416 A JPH0566416 A JP H0566416A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- electrode
- present
- disconnection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はTVやパソコンのディス
プレイに用いられる液晶表示体に関する。さらに詳しく
は、断線を修正した表示品位の高い液晶表示体に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display used for a display of a TV or a personal computer. More specifically, the present invention relates to a liquid crystal display body having a high display quality in which disconnection is corrected.
【0002】[0002]
【従来の技術】従来、TVやパソコンのディスプレイの
次期主力候補として液晶表示体が注目され、中でもハイ
ビジョンTV等の高精細映像分野ではTFT方式の液晶
表示体が本命とされ、鋭意研究開発が行われてきた。2. Description of the Related Art Conventionally, a liquid crystal display has been attracting attention as a next main candidate for a display of a TV or a personal computer, and a TFT type liquid crystal display has been a favorite in the field of high-definition video such as a high-definition TV. I've been told.
【0003】これら高精細映像分野の液晶表示体では、
電極配線幅やスイッチング素子サイズを微小化し、限ら
れた基板サイズの中に表示性能上可能な限りの表示画素
を配置している。例えばSID 90 Digest,
pp.338に記載のアモルファスSi−TFTを用い
た液晶表示体では、対角5.5”に120万画素の素子
が構成されているし、またSID 90 Diges
t,pp.315に記載のポリSi−TFT方式の液晶
表示体では300/mm2 以上の画素密度が既に報告さ
れている。In the liquid crystal displays in these high definition video fields,
The electrode wiring width and the switching element size are miniaturized, and as many display pixels as possible in display performance are arranged in a limited substrate size. For example, SID 90 Digest,
pp. In the liquid crystal display using the amorphous Si-TFT described in 338, an element having 1.2 million pixels is formed in a diagonal of 5.5 ″, and SID 90 Diges is used.
t, pp. In the liquid crystal display of the poly-Si-TFT method described in 315, a pixel density of 300 / mm 2 or more has already been reported.
【0004】図4は代表的ポリSi−TFT方式の液晶
表示体の1画素部の素子の断面図を示す。石英基板40
5上にSiゲート電極401、Al(アルミニウム)ソ
ース線402、ITO透明画素電極403が形成されて
いる。ゲート線に加えられた選択信号により、TFT4
04がオンし、ソース線に加えられた映像信号が画素電
極に入力され液晶を駆動することが可能である。FIG. 4 shows a cross-sectional view of an element in one pixel portion of a typical poly-Si-TFT type liquid crystal display. Quartz substrate 40
A Si gate electrode 401, an Al (aluminum) source line 402, and an ITO transparent pixel electrode 403 are formed on the substrate 5. The TFT4 is selected by the selection signal applied to the gate line.
When 04 is turned on, the video signal applied to the source line can be input to the pixel electrode to drive the liquid crystal.
【0005】[0005]
【発明が解決しようとする課題】しかし、上記高精細の
液晶表示体では電極配線の幅が数μmと狭く、断線等の
欠陥が多く、表示上問題の無い無断線パネルは歩留まり
が低く、特にハイビジョンTVやパソコン用等の物では
基板サイズが大きく、且つ高密度なため容易に製造でき
ないのが実状であった。このような断線を修正する技術
についてはSPIE Vol.774pp101(19
87)に記載のレーザーCVDと呼ばれる手法と装置が
公知であり、これは半導体のフォトマスクの修正のよう
に、遮光性の修正には高い確率で修正が可能であるが、
図1に記載のようなSiO2 等の絶縁膜103下の電極
102の修正には電気的に低抵抗で接続修正することが
必要で、レーザーの熱で絶縁膜を破壊し、下地の電極を
露出した上で接続を行う必要があり、単にレーザーで穴
を開け上記レーザーCVDで膜をつけたのでは修正の成
功確率がきわめて低いのが実状であった。However, in the above-mentioned high-definition liquid crystal display body, the width of the electrode wiring is as narrow as several μm, there are many defects such as disconnection, and the yield rate is low in the unbroken panel, which has no problem in display. In the case of high-definition TVs, personal computers, etc., the substrate size is large and the density is high, so it cannot be easily manufactured. Regarding the technique for correcting such disconnection, SPIE Vol. 774pp101 (19
The technique and apparatus called laser CVD described in 87) is known, and this can be corrected with a high probability for correction of light-shielding property such as correction of a semiconductor photomask.
In order to repair the electrode 102 under the insulating film 103 such as SiO 2 as shown in FIG. 1, it is necessary to electrically correct the connection with a low resistance, and the heat of the laser destroys the insulating film to remove the underlying electrode. It is necessary to make a connection after exposing, and it is the actual situation that the success probability of the correction is extremely low if the holes are simply made by laser and the film is made by the laser CVD.
【0006】そこで、本発明は以上の課題を解決するも
ので、その目的は断線の修正確率の高い液晶表示体の提
供にある。Therefore, the present invention solves the above problems, and an object of the present invention is to provide a liquid crystal display having a high probability of correcting a disconnection.
【0007】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明の液晶表示体は、液晶を駆動するスイッチン
グ素子を有する基板上の電極配線の断線箇所の両側上に
複数の電気的導通部を形成し、該電気的導通部を介して
前記断線箇所を結線したことを特徴とする。In order to solve the above-mentioned problems, a liquid crystal display of the present invention has a plurality of electrical conductions on both sides of a broken portion of an electrode wiring on a substrate having a switching element for driving a liquid crystal. A portion is formed, and the disconnection point is connected through the electrically conductive portion.
【0008】[0008]
【作用】本発明によれば断線箇所が確実に結線される。According to the present invention, the disconnection point is surely connected.
【0009】[0009]
【実施例】以下実施例に従い、本発明を詳細に説明す
る。The present invention will be described in detail with reference to the following examples.
【0010】(実施例1)図1は本発明の液晶表示体に
かかるポリSi−TFT基板の断線部分の構成断面図で
ある。石英基板101上の膜厚3000Åのp(ポリ)
−Siゲート電極102にできた断線部109を修正接
続するために、膜厚7000ÅのSiO2膜103の上
から各々2ケ所のコンタクトホール104,105,1
06,107をパルスレーザー加工により穴開けし、そ
の上に膜厚約2000ÅのCoのCVD膜108を選択
膜付けしてなるものである。(Embodiment 1) FIG. 1 is a sectional view showing the structure of a broken portion of a poly-Si-TFT substrate according to the liquid crystal display of the present invention. 3,000 Å thick p (poly) on quartz substrate 101
In order to correct and connect the disconnection portion 109 formed in the -Si gate electrode 102, two contact holes 104, 105, 1 are formed from the SiO 2 film 103 having a film thickness of 7000Å.
Nos. 06 and 107 are perforated by pulse laser processing, and a Co CVD film 108 having a film thickness of about 2000 Å is selectively formed thereon.
【0011】図2は同基板の正面からの配置図で、4つ
のコンタクトホール104,105,106,107を
介して両側の電極202,203が結線201(例えば
CoのCVD膜)されている。コンタクトホールの穴径
はレーザーパワーと時間によるが、2〜5μmレベルの
物は可能である。一方CoのCVD膜はシート抵抗で5
Ω/□以下で短い結線には問題がなかった。FIG. 2 is a front view of the same substrate, in which electrodes 202 and 203 on both sides are connected 201 (for example, a CVD CVD film) through four contact holes 104, 105, 106 and 107. The diameter of the contact hole depends on the laser power and time, but a diameter of 2 to 5 μm is possible. On the other hand, the Co CVD film has a sheet resistance of 5
There was no problem with short connections below Ω / □.
【0012】本実施例で用いた修正装置の基本構成は上
記引用文献に記載の物と同様でSiO2 膜の穴開けには
YLFレーザーからの523nmのパルス光を照射し
た。また膜付けには電極用原料としてCo有機金属を含
むHeガスをフローさせながら、Ar+ レーザーの51
4nm連続光を用いた。上記方法によりゲート線の断線
を修正したTFT基板を用いて、通常のTN液晶を対向
基板との間で挾持し、液晶パネルを構成して表示信号を
入力したところ、線上の表示不良は無く、電気的に修正
されていることが確認された。コンタクトホールが1ケ
の場合修正が成功する確率はきわめて低く、単に穴を開
けて描画すれば良いわけでなく、本発明の如き冗長性の
ある配線修正により初めて高い修正率が得られた。The basic structure of the correction device used in this example is the same as that described in the above cited document, and 523 nm pulsed light from a YLF laser was irradiated to make holes in the SiO 2 film. Further, for film deposition, while flowing He gas containing Co organic metal as an electrode raw material, 51% of Ar + laser was used.
4 nm continuous light was used. When a normal TN liquid crystal is sandwiched between the counter substrate and the TFT substrate in which the disconnection of the gate line is corrected by the above method, and a display signal is inputted by forming a liquid crystal panel, there is no display defect on the line. It was confirmed that it was corrected electrically. When the number of contact holes is one, the probability of successful repair is extremely low, and it is not necessary to simply make a hole for drawing, and a high repair rate was obtained for the first time by the redundant wiring repair as in the present invention.
【0013】(実施例2)図3は、本発明の別の実施例
に於ける基板の断線部の配置正面図で、本発明が特に効
果を発揮する場合を示す。ゲート線の断線部301がT
FT素子302並びにソース線303と近接しているた
め充分なコンタクト部を電極の中心部に形成できない場
合、断線301の周辺部において複数のコンタクトホー
ル305,306,307,308を絶縁膜に形成し導
通確率を高めた。(Embodiment 2) FIG. 3 is a front view of an arrangement of a broken portion of a substrate according to another embodiment of the present invention, showing a case where the present invention is particularly effective. The disconnection part 301 of the gate line is T
When a sufficient contact portion cannot be formed in the central portion of the electrode because it is close to the FT element 302 and the source line 303, a plurality of contact holes 305, 306, 307, 308 are formed in the insulating film in the peripheral portion of the disconnection 301. Increased conduction probability.
【0014】本発明を用いない場合、断線修復の確率よ
りも新たなソース線−ゲート線間のショートの発生によ
り不良の増加が多発したのに対し、本発明の適用により
修正確率が大幅に改良された。さらに本発明の別の実施
例ではアモルファスSi−TFT基板のTaゲート電極
に対しても適用し、同様の効果が得られていることから
本発明の範囲が上記実施例に限定されず、配線並びに材
料の種類に係わりなく修正確率を高める効果があること
は明らかである。When the present invention is not used, the number of defects frequently increases due to the occurrence of a new short between the source line and the gate line rather than the probability of repairing the disconnection, whereas the application of the present invention significantly improves the correction probability. Was done. Furthermore, in another embodiment of the present invention, it is applied to the Ta gate electrode of the amorphous Si-TFT substrate, and the same effect is obtained. Therefore, the scope of the present invention is not limited to the above embodiment, and wiring and wiring It is clear that there is an effect of increasing the correction probability regardless of the type of material.
【0015】[0015]
【発明の効果】以上からも明らかなように本発明によれ
ば高い修正確率で電極配線の断線の修正が可能となり、
ハイビジョンTVをはじめ、パソコン用ディスプレイの
分野に対し無欠陥で高品位な液晶表示体を提供すること
ができる。As is apparent from the above, according to the present invention, it is possible to correct the disconnection of the electrode wiring with a high correction probability,
It is possible to provide defect-free and high-quality liquid crystal displays for the fields of personal computer displays such as high-definition TVs.
【図1】本発明の断線部分の構成断面図である。FIG. 1 is a cross-sectional view showing a configuration of a disconnection portion of the present invention.
【図2】本発明の基板の正面配置図である。FIG. 2 is a front layout view of a substrate of the present invention.
【図3】本発明の断線部分の正面配置図である。FIG. 3 is a front layout view of a disconnection portion of the present invention.
【図4】従来の素子の断面図である。FIG. 4 is a sectional view of a conventional element.
101 石英基板 102 p−siゲート電極 103 SiO2 104〜107 コンタクトホール 108 Co CVD膜 109 断線部 201 結線 202,203 両側電極 301 ゲート線断線部 302 TFT素子 303 ソース線 304 画素電極 401 Siゲート電極 402 Alソース線 403 ITO透明電極 404 TFT 405 石英基板101 quartz substrate 102 p-si gate electrode 103 SiO 2 104 to 107 contact hole 108 Co CVD film 109 disconnecting section 201 connected 202 and 203 on both sides electrodes 301 a gate line disconnection unit 302 TFT element 303 the source line 304 pixel electrode 401 Si gate electrode 402 Al source line 403 ITO transparent electrode 404 TFT 405 Quartz substrate
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 29/784 H04N 5/66 102 A 7205−5C Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI Technical indication location H01L 29/784 H04N 5/66 102 A 7205-5C
Claims (1)
る基板上の電極配線の断線箇所の両側上に複数の電気的
導通部を形成し、該電気的導通部を介して前記断線箇所
を結線したことを特徴とする液晶表示体。1. A plurality of electrically conductive portions are formed on both sides of a disconnected portion of an electrode wiring on a substrate having a switching element for driving a liquid crystal, and the disconnected portion is connected through the electrically conductive portion. Liquid crystal display body characterized by.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22598191A JPH0566416A (en) | 1991-09-05 | 1991-09-05 | Liquid crystal display body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22598191A JPH0566416A (en) | 1991-09-05 | 1991-09-05 | Liquid crystal display body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0566416A true JPH0566416A (en) | 1993-03-19 |
Family
ID=16837924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22598191A Pending JPH0566416A (en) | 1991-09-05 | 1991-09-05 | Liquid crystal display body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0566416A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002328398A (en) * | 2001-05-01 | 2002-11-15 | Matsushita Electric Ind Co Ltd | Repairing method for disconnection of circuit wiring of liquid crystal panel |
JP2004361443A (en) * | 2003-06-02 | 2004-12-24 | Advanced Display Inc | Display device and method for manufacturing the display device |
JP2006171576A (en) * | 2004-12-17 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device and method of manufacturing the same |
JP2006171610A (en) * | 2004-12-20 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device and method of manufacturing the same |
WO2008026352A1 (en) * | 2006-09-01 | 2008-03-06 | Sharp Kabushiki Kaisha | Method for manufacturing display and display |
JP2009076722A (en) * | 2007-09-21 | 2009-04-09 | Sony Corp | Circuit board, display device, repair method of circuit board |
US8199273B2 (en) | 2007-08-31 | 2012-06-12 | Toshiba Matsushita Display Technology Co., Ltd. | Array substrate for flat-panel display device and its manufacturing method |
US8711297B2 (en) | 2009-02-26 | 2014-04-29 | Ricoh Company, Ltd. | Display device and method of repairing display device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01134344A (en) * | 1987-11-19 | 1989-05-26 | Sharp Corp | Active matrix substrate |
JPH02157828A (en) * | 1988-12-12 | 1990-06-18 | Hosiden Electron Co Ltd | Liquid crystal display element |
-
1991
- 1991-09-05 JP JP22598191A patent/JPH0566416A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01134344A (en) * | 1987-11-19 | 1989-05-26 | Sharp Corp | Active matrix substrate |
JPH02157828A (en) * | 1988-12-12 | 1990-06-18 | Hosiden Electron Co Ltd | Liquid crystal display element |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002328398A (en) * | 2001-05-01 | 2002-11-15 | Matsushita Electric Ind Co Ltd | Repairing method for disconnection of circuit wiring of liquid crystal panel |
JP2004361443A (en) * | 2003-06-02 | 2004-12-24 | Advanced Display Inc | Display device and method for manufacturing the display device |
JP2006171576A (en) * | 2004-12-17 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device and method of manufacturing the same |
JP2006171610A (en) * | 2004-12-20 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device and method of manufacturing the same |
WO2008026352A1 (en) * | 2006-09-01 | 2008-03-06 | Sharp Kabushiki Kaisha | Method for manufacturing display and display |
US8199273B2 (en) | 2007-08-31 | 2012-06-12 | Toshiba Matsushita Display Technology Co., Ltd. | Array substrate for flat-panel display device and its manufacturing method |
JP2009076722A (en) * | 2007-09-21 | 2009-04-09 | Sony Corp | Circuit board, display device, repair method of circuit board |
US8711297B2 (en) | 2009-02-26 | 2014-04-29 | Ricoh Company, Ltd. | Display device and method of repairing display device |
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