JPH01127260U

JPH01127260U -

Info

Publication number: JPH01127260U
Application number: JP2265988U
Authority: JP
Priority date: 1988-02-22
Filing date: 1988-02-22
Publication date: 1989-08-31

Description

[Brief explanation of the drawing]

第１図〜第７図は、本考案の一実施例によるＭ
ＩＭキヤパシターの形成順序を示したＭＩＭキヤ
パシターの断面図である。１はＧａＡｓ基板、４はＭＩＭ下層メタル、２
はＭＩＭ下層メタル４と同一厚みの絶縁膜である
。なお、図中、同一符号は同一、又は相当部分を
示す。 FIGS. 1 to 7 show M according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of the MIM capacitor showing the order of forming the IM capacitor. 1 is the GaAs substrate, 4 is the MIM lower layer metal, 2
is an insulating film having the same thickness as the MIM lower layer metal 4. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

補正昭６３．６．２３図面の簡単な説明を次のように補正する。明細書第８頁第１２行に「断面図である。」と
あるのを「断面図、第８図〜第１５図は、従来の
ＭＩＭキヤパシターの形成順序を示したＭＩＭキ
ヤパシターの断面図である。」と訂正する。補正昭６３．７．１２実用新案登録請求の範囲を次のように補正する
。Amendment June 23, 1983 The brief description of the drawing is amended as follows. On page 8, line 12 of the specification, the phrase "This is a cross-sectional view." is replaced with "Cross-sectional view." ”, he corrected. Amendment July 12, 1983 The scope of claims for utility model registration is amended as follows.

【実用新案登録請求の範囲】下層メタル、層間絶縁膜および上層メタルから
なるＭＩＭキヤパシターにおいて、ＧａＡｓ基板
上に下層メタルと同一膜厚となる絶縁膜を形成し
、該絶縁膜の所定位置に下層メタル配置用開口部
を設け、ここに下層メタルを形成しこの下層メタ
ルの上に下層メタルと上層メタルの面積よりも大
きくなるように層間絶縁膜を形成し、その上に、
上層メタルを形成する事によつて、下層メタル・
層間絶縁膜及び上層メタルに段差を生じない事を
特徴としたＭＩＭキヤパシター。[Claim for Utility Model Registration] In an MIM capacitor consisting of a lower metal layer, an interlayer insulating film, and an upper metal layer, an insulating film having the same thickness as the lower metal layer is formed on a GaAs substrate, and the lower layer is placed at a predetermined position on the insulating film. An opening for metal placement is provided, a lower layer metal is formed therein, an interlayer insulating film is formed on the lower layer metal so that the area is larger than the area of the lower layer metal and the upper layer metal, and on top of that,
By forming the upper layer metal, the lower layer metal
A MIM capacitor characterized by the fact that there are no steps between the interlayer insulating film and the upper metal layer.

Claims

[Scope of utility model registration request]

In an MIM capacitor consisting of a lower layer metal, an interphase insulating film, and an upper layer metal, an insulating film having the same thickness as the lower layer metal is formed on a GaAs substrate, and an opening for lower layer metal placement is provided at a predetermined position in the insulating film. A lower layer metal is formed on the lower layer metal, a correlative insulating film is formed on the lower layer metal so that the area is larger than the area of the lower layer metal and the upper layer metal, and on top of that,
By forming the upper layer metal, the lower layer metal
A MIM capacitor that features no step difference between the interphase insulating film and the upper metal layer.