JPH02120850U - - Google Patents
Info
- Publication number
- JPH02120850U JPH02120850U JP3117089U JP3117089U JPH02120850U JP H02120850 U JPH02120850 U JP H02120850U JP 3117089 U JP3117089 U JP 3117089U JP 3117089 U JP3117089 U JP 3117089U JP H02120850 U JPH02120850 U JP H02120850U
- Authority
- JP
- Japan
- Prior art keywords
- layer metal
- lower layer
- insulating film
- gaas substrate
- mim capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 5
- 239000011229 interlayer Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図ａ〜ｆはこの考案の一実施例によるＭＩ
Ｍキヤパシターの形成順序を示す断面図、第２図
ａ〜ｈは従来のＭＩＭキヤパシターの形成順序を
示す断面図である。
図において、１はＧａＡｓ基板、２は絶縁膜、
２０は絶縁膜、４はＭＩＭ下層メタル、５はＭＩ
Ｍ絶縁膜、７はＭＩＭ上層メタルである。なお、
図中、同一符号は同一、又は相当部分を示す。
FIGS. 1a to 1f show an MI according to an embodiment of this invention.
FIGS. 2A to 2H are cross-sectional views showing the order of formation of a conventional MIM capacitor. In the figure, 1 is a GaAs substrate, 2 is an insulating film,
20 is an insulating film, 4 is an MIM lower layer metal, and 5 is an MI
M insulating film, 7 is MIM upper layer metal. In addition,
In the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
るＭＩＭキヤパシターにおいて、下層メタル下の
ＧａＡｓ基板を堀り込み、上記堀り込み部に絶縁
膜を形成後、下層メタルを形成し、上記下層メタ
ルはＧａＡｓ基板上と同一高さであることを特徴
とするＭＩＭキヤパシター。 In an MIM capacitor consisting of a lower layer metal, an interlayer insulating film, and an upper layer metal, a GaAs substrate under the lower layer metal is dug, an insulating film is formed in the dug portion, a lower layer metal is formed, and the lower layer metal is formed on the GaAs substrate. A MIM capacitor characterized by being the same height as above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3117089U JPH02120850U (en) | 1989-03-16 | 1989-03-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3117089U JPH02120850U (en) | 1989-03-16 | 1989-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02120850U true JPH02120850U (en) | 1990-09-28 |
Family
ID=31256832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3117089U Pending JPH02120850U (en) | 1989-03-16 | 1989-03-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02120850U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022519A (en) * | 2012-07-17 | 2014-02-03 | Saitama Univ | Photon detector using superconduction tunnel junction |
-
1989
- 1989-03-16 JP JP3117089U patent/JPH02120850U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022519A (en) * | 2012-07-17 | 2014-02-03 | Saitama Univ | Photon detector using superconduction tunnel junction |