JPH01111872A - スパッタリング装置 - Google Patents
スパッタリング装置Info
- Publication number
- JPH01111872A JPH01111872A JP26889387A JP26889387A JPH01111872A JP H01111872 A JPH01111872 A JP H01111872A JP 26889387 A JP26889387 A JP 26889387A JP 26889387 A JP26889387 A JP 26889387A JP H01111872 A JPH01111872 A JP H01111872A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- semiconductor substrate
- capture electrode
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 66
- 239000000463 material Substances 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 description 45
- 239000004065 semiconductor Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 230000002411 adverse Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 241000283986 Lepus Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26889387A JPH01111872A (ja) | 1987-10-23 | 1987-10-23 | スパッタリング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26889387A JPH01111872A (ja) | 1987-10-23 | 1987-10-23 | スパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01111872A true JPH01111872A (ja) | 1989-04-28 |
JPH0583633B2 JPH0583633B2 (enrdf_load_stackoverflow) | 1993-11-26 |
Family
ID=17464731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26889387A Granted JPH01111872A (ja) | 1987-10-23 | 1987-10-23 | スパッタリング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01111872A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08239761A (ja) * | 1995-02-28 | 1996-09-17 | Hiroshima Nippon Denki Kk | スパッタリング装置 |
WO1998053117A1 (en) * | 1997-05-22 | 1998-11-26 | Tokyo Electron Limited | Apparatus and method for sputter depositing dielectric films on a substrate |
US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
US6361667B1 (en) | 1997-03-18 | 2002-03-26 | Anelva Corporation | Ionization sputtering apparatus |
CN104008268A (zh) * | 2014-03-20 | 2014-08-27 | 上海宇航系统工程研究所 | 空间目标可见光散射特性分析模型校验方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5916975A (ja) * | 1982-07-20 | 1984-01-28 | Canon Inc | スパツタリング装置 |
-
1987
- 1987-10-23 JP JP26889387A patent/JPH01111872A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5916975A (ja) * | 1982-07-20 | 1984-01-28 | Canon Inc | スパツタリング装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08239761A (ja) * | 1995-02-28 | 1996-09-17 | Hiroshima Nippon Denki Kk | スパッタリング装置 |
US6361667B1 (en) | 1997-03-18 | 2002-03-26 | Anelva Corporation | Ionization sputtering apparatus |
WO1998053117A1 (en) * | 1997-05-22 | 1998-11-26 | Tokyo Electron Limited | Apparatus and method for sputter depositing dielectric films on a substrate |
US6475353B1 (en) * | 1997-05-22 | 2002-11-05 | Sony Corporation | Apparatus and method for sputter depositing dielectric films on a substrate |
US6077403A (en) * | 1997-06-06 | 2000-06-20 | Anelva Corporation | Sputtering device and sputtering method |
CN104008268A (zh) * | 2014-03-20 | 2014-08-27 | 上海宇航系统工程研究所 | 空间目标可见光散射特性分析模型校验方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0583633B2 (enrdf_load_stackoverflow) | 1993-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |