JPH01106428A - マスクとウエハのプリアライメント方法 - Google Patents

マスクとウエハのプリアライメント方法

Info

Publication number
JPH01106428A
JPH01106428A JP62264601A JP26460187A JPH01106428A JP H01106428 A JPH01106428 A JP H01106428A JP 62264601 A JP62264601 A JP 62264601A JP 26460187 A JP26460187 A JP 26460187A JP H01106428 A JPH01106428 A JP H01106428A
Authority
JP
Japan
Prior art keywords
mask
wafer
stage
chuck
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62264601A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055369B2 (enrdf_load_stackoverflow
Inventor
Ryoji Tanaka
良治 田中
Hidekazu Kono
英一 河野
Joji Iwata
岩田 穣治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62264601A priority Critical patent/JPH01106428A/ja
Publication of JPH01106428A publication Critical patent/JPH01106428A/ja
Publication of JPH055369B2 publication Critical patent/JPH055369B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP62264601A 1987-10-19 1987-10-19 マスクとウエハのプリアライメント方法 Granted JPH01106428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62264601A JPH01106428A (ja) 1987-10-19 1987-10-19 マスクとウエハのプリアライメント方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62264601A JPH01106428A (ja) 1987-10-19 1987-10-19 マスクとウエハのプリアライメント方法

Publications (2)

Publication Number Publication Date
JPH01106428A true JPH01106428A (ja) 1989-04-24
JPH055369B2 JPH055369B2 (enrdf_load_stackoverflow) 1993-01-22

Family

ID=17405581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62264601A Granted JPH01106428A (ja) 1987-10-19 1987-10-19 マスクとウエハのプリアライメント方法

Country Status (1)

Country Link
JP (1) JPH01106428A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007225727A (ja) * 2006-02-21 2007-09-06 Orc Mfg Co Ltd 基板露光装置および基板露光方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007225727A (ja) * 2006-02-21 2007-09-06 Orc Mfg Co Ltd 基板露光装置および基板露光方法

Also Published As

Publication number Publication date
JPH055369B2 (enrdf_load_stackoverflow) 1993-01-22

Similar Documents

Publication Publication Date Title
JP3074579B2 (ja) 位置ずれ補正方法
JPH01161243A (ja) 相関関係のあるアライメントをされたデュアル光学システムを用いるフラットパネル形ディスプレイ等の大面積電子デバイスを製造するための装置及び方法
US4617469A (en) Exposure apparatus with detecting means insertable into an exposure path
US6583430B1 (en) Electron beam exposure method and apparatus
JPH0616476B2 (ja) パターン露光方法
US4669867A (en) Alignment and exposure apparatus
US6517997B1 (en) Production of an integrated optical device
JPH08330222A (ja) X線露光用マスク及びそれを用いた半導体素子の製造方法
US6426508B1 (en) Surface-position detection device, a projection exposure apparatus using the device, and a device manufacturing method using the apparatus
JP2994968B2 (ja) マスクとワークの位置合わせ方法および装置
KR19990045161A (ko) 위치맞춤장치 및 투영노광장치
JP3360744B2 (ja) アライメント方法、及び走査型露光装置
JPH06232027A (ja) 投影露光装置
JPH01106428A (ja) マスクとウエハのプリアライメント方法
JP2000012455A (ja) 荷電粒子線転写露光装置及び荷電粒子線転写露光装置におけるマスクと感応基板の位置合わせ方法
JP3507205B2 (ja) 走査型露光装置及び該装置を用いてデバイスを製造する方法
JPH01101629A (ja) マスクとウェハのプリアライメント方法
JP2868548B2 (ja) アライメント装置
JP3639231B2 (ja) 位置合わせ装置及び位置合わせ方法
KR100283838B1 (ko) 스캔노광장치및스캔노광방법
JPH0520888B2 (enrdf_load_stackoverflow)
JP2637412B2 (ja) 位置あわせ方法
JP3472078B2 (ja) 露光方法及び露光装置
JP2802846B2 (ja) アライメントシステム
KR100574076B1 (ko) 노광 장치