JPH01102935A - Formation of bump - Google Patents
Formation of bumpInfo
- Publication number
- JPH01102935A JPH01102935A JP62259787A JP25978787A JPH01102935A JP H01102935 A JPH01102935 A JP H01102935A JP 62259787 A JP62259787 A JP 62259787A JP 25978787 A JP25978787 A JP 25978787A JP H01102935 A JPH01102935 A JP H01102935A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- metal
- metal bumps
- pellet
- bump forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000007747 plating Methods 0.000 claims abstract description 24
- 239000008188 pellet Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 19
- 239000011889 copper foil Substances 0.000 abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 241000121220 Tricholoma matsutake Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、フィルム（フィルムキャリヤ）に固着され
たリード部材に、ＩＣペレットの外部接続端子を接合す
るための金属バンプを形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of forming metal bumps for bonding external connection terminals of an IC pellet to a lead member fixed to a film (film carrier).
［従来の技術］
ＩＣペレットの外部接続端子を、フィルムに固着された
リード部材に接合する方法としては、ＩＣペレットのア
ルミニウム電極（外ａＢ接続端子）上に金（ＡＵ）製の
金属バンプを形成し、この金属バンプに、フィルムキャ
リヤに形成された銅リードを接合する所ＸＩ Ｔ Ａ
Ｂ （Ｔａｐｅ ＡｕｔｏｍａｔｅｄＢｏｎｄｉｎｓ）
方式が知られている。[Prior Art] A method for joining the external connection terminal of an IC pellet to a lead member fixed to a film is to form a metal bump made of gold (AU) on the aluminum electrode (outer aB connection terminal) of the IC pellet. Then, the copper lead formed on the film carrier is bonded to this metal bump.
B (Tape Automated Bonds)
The method is known.
上述の方法では、アルミニウム電極と金属バンプとの接
続強度を強くする等の目的で、アルミニウム電極とバン
プ材料との間にバリヤメタルを介在させた三層構造をと
っている。このような三層構造を形成するには、レジス
ト形成１霧光１現像、スパッタリング（または蒸Ｒ）及
びメッキ等（７） ａ １１ ＷＲな処理を何回も行な
わなければならず。In the above-described method, a three-layer structure in which a barrier metal is interposed between the aluminum electrode and the bump material is used for the purpose of increasing the connection strength between the aluminum electrode and the metal bump. In order to form such a three-layer structure, it is necessary to perform several processes such as resist formation, fog light, development, sputtering (or evaporation), and plating (7) a 11 WR.
製作工程がａｍで、コスト高となる要因となる。The manufacturing process is AM, which causes high costs.
と０ろで・このようにアルミニウム電極側にＩくンプを
形成する複雑さを避けるため、従来からフィルムの銅リ
ードに、フォトエツチング法や転写法などにより金属バ
ンプを形成し、この金属バンプをＩＣペレットの外部接
続端子に接合するようにしたバンプ付フィルムキャリヤ
が検討されている。このバンプ付フィルムキャリヤを用
いる場合、ＩＣペレットのアルミニウム電極とバンプと
が直接、熱圧着で接合されるため、メッキによりバンプ
を形成する場合における金属間のガルバニックコロ−ジ
ョンの対処としてのバリアメタルが不必要となるため、
大変、ｆ戯事的な生産が可能となる。In order to avoid the complexity of forming I bumps on the aluminum electrode side, conventionally metal bumps have been formed on the copper lead of the film by photo-etching or transfer methods. Bumped film carriers that are bonded to external connection terminals of IC pellets are being considered. When using this film carrier with bumps, the aluminum electrodes of the IC pellet and the bumps are directly bonded by thermocompression bonding, so barrier metal is used to prevent galvanic corrosion between metals when forming bumps by plating. Since it is no longer necessary,
This makes it possible to produce extremely humorous production.
しかして、このバンプ付フィルムキャリヤにおいては、
銅リードにメッキによりバンプを形成する方法で検討さ
れているが、このバンプの形状は銅リード接合部よりも
頭部を幅広の半球状となした、所謂、マツシュルーム形
状としたものであった。However, in this bumped film carrier,
A method of forming bumps on copper leads by plating has been considered, but the shape of the bumps was so-called a pine mushroom shape, with the head being wider than the copper lead joint.
［発明が解決しようとする問題点Ｊ
しかし、上述の如く、従来の金属バンプの頭部は半球状
であって、その端面が平坦でないため、ＩＣペレットの
外部接続端子との接合に、部分的な強引が生じ、強力な
接合を困難にすると共に、金属バンプの頭部は銅リード
接合部よりも幅広であるため、その分、隣接する端子間
のピッチを小さくできなくなるという不都合が生じる。[Problem to be solved by the invention J However, as mentioned above, the head of the conventional metal bump is semispherical and its end surface is not flat, so it is difficult to connect the IC pellet with the external connection terminal partially. In addition, since the head of the metal bump is wider than the copper lead joint, the pitch between adjacent terminals cannot be made smaller.
この発明は上記の事情に鑑みてなされたもので、その目
的は、隣接する端子間のピッチを小さくし且つＩＣペレ
ットのアルミニウム電極への接合力を完全なものとする
バンプ形成方法を提供することである。This invention has been made in view of the above circumstances, and its purpose is to provide a bump forming method that reduces the pitch between adjacent terminals and perfects the bonding force of the IC pellet to the aluminum electrode. It is.
［問題点を解決するための手段］
この発明のバンプ形成方法は、フィルムに固着されたリ
ード部材に、ＩＣペレットの外部接続端子を接合するた
めの金属バンプを形成する方法において、前記リード部
材のバンプ形成面に臨んでバンプ形成孔を形成する所定
厚さのメッキレジストを前記リード部材に形成し、前記
バンプ形成孔内に臨む前記リード部材のバンプ形成面に
、前記バンプ形成孔から突出しない厚さに金属バンプを
メッキにより形成するようにしたものである。[Means for Solving the Problems] The bump forming method of the present invention is a method for forming a metal bump for bonding an external connection terminal of an IC pellet to a lead member fixed to a film. A plating resist having a predetermined thickness is formed on the lead member to form a bump forming hole facing the bump forming surface, and a plating resist having a predetermined thickness that does not protrude from the bump forming hole is formed on the bump forming surface of the lead member facing into the bump forming hole. A metal bump is formed by plating.
［作 用］
すなわち、この発明のバンプ形成方法は、メッキレジス
トのバンプ形成孔内に臨むリード部材のバンプ形成面に
、金属バンプをメッキにより／＜ンプ形成孔から突出し
ない厚さに形成したものであるから、メッキ金属はバン
プ形成孔の対向面以外の周囲から付着されることがなく
、それ故金属バンプの頭部端面は、半球状に盛り上がる
ことなく平坦に形成され、しかも、前記金属バンプの頭
部が幅広となることもない。[Function] That is, in the bump forming method of the present invention, metal bumps are formed by plating on the bump forming surface of the lead member facing into the bump forming holes of the plating resist to a thickness that does not protrude from the bump forming holes. Therefore, the plating metal is not attached from the periphery other than the surface facing the bump forming hole, and therefore the head end surface of the metal bump is formed flat without being hemispherically raised. The head of the head is not wide.
［実施例１
この発明の一実施例を第１図（Ａ）〜（Ｉ）及び第２図
を参照して説明する。[Embodiment 1] An embodiment of the present invention will be described with reference to FIGS. 1(A) to (I) and FIG. 2.
第１図（Ａ）〜（Ｉ）は、この発明により金属バンプ５
を形成し、この金属バンプ６ａ、６ｂに、ＩＣペレット
９の外部接続端子９ａ、９ｂを接合してＩＣＣチップ装
作する工程を、その工程順に示したものである。FIGS. 1A to 1I show metal bumps 5 according to the present invention.
The steps of forming an ICC chip and bonding the external connection terminals 9a and 9b of the IC pellet 9 to the metal bumps 6a and 6b to form an ICC chip are shown in order.
ｉｆ、第１図（Ａ）において、フィルム（フィルムキャ
リヤ）ｌは、ポリエステルまたはポリイミド等の合成樹
脂製の９膜（例えば、厚さ５０〜１０１００ｐからなり
１両側縁部には搬送用スプロケットと係合されるスプロ
ケット保合札（いずれも図示しない）が、そして中央部
にはデバイス孔１ａが、プレスにより打抜かれて形成さ
れている。このフィルムｌの上面には、例えば厚さｌＯ
〜３０ＪＬｍのリード形成用銅箔２がデバイス孔１ａを
含めてラミネートされている。この銅箔２は、接着剤３
によりフィルムｌに固着されている。If, in FIG. 1 (A), the film (film carrier) l is made of 9 films made of synthetic resin such as polyester or polyimide (for example, 50 to 10,100 p thick, and has 1 film on both sides that engages with the conveying sprocket. A sprocket retaining tag (none of which is shown) to be fitted and a device hole 1a in the center are punched out using a press.The upper surface of this film 1 has a thickness of, for example,
A lead-forming copper foil 2 of ~30 JLm is laminated including the device hole 1a. This copper foil 2 is attached to the adhesive 3
is fixed to the film l.
そして、この銅箔２の両面、すなわち銅箔２の上面と、
デバイス孔ｌａ内に臨む銅箔２の下面に、第１図（Ｂ）
に示すように、メッキレジスト４．５をそれぞれ塗布ま
たは印刷により形成する・前記デバイス孔ｌａ内に形成
されたメッキレジスト５は、後述する金属バンプ６ａ、
６ｂの厚さＬ（例えば、 Ｌ＝ ｌ Ｏ〜２０ｔｔ−ｍ
）より低くならない所定の厚さＨ（例えば、Ｈ＝２０〜
３０＃Ｌｍ）に形成されている。Then, both sides of this copper foil 2, that is, the upper surface of the copper foil 2,
1(B) on the bottom surface of the copper foil 2 facing into the device hole la.
As shown in FIG. 2, plating resists 4.5 are formed by coating or printing, respectively. The plating resists 5 formed in the device holes la are formed by metal bumps 6a, which will be described later.
Thickness L of 6b (e.g. L=lO~20tt-m
) (e.g., H=20~
30#Lm).
次に、第１図（Ｃ）に示すように、前記銅箔２のバンプ
形成面２ａ、２ｂに臨む前記メッキレジスト５の部分に
、マスク、露光、現像によりバンプ形成孔５ａ、５ｂを
形成する。Next, as shown in FIG. 1C, bump forming holes 5a and 5b are formed in the portions of the plating resist 5 facing the bump forming surfaces 2a and 2b of the copper foil 2 by masking, exposure, and development. .
そして、第１ｓ（Ｄ）及び第２１！ｉ５に示すように、
前記バンプ形成孔５ａ、Ｓｂ内に臨む前記銅箔２のバン
プ形成面２ａ、２ｂに、前記バンプ形成孔５ａ、５ｂか
ら突出しない厚さ、すなわち前記メッキレジスト５の表
面から突出しない厚さＬになるように金（ＡＵ ）をメ
ッキして金属バンプ６ａ、６ｂを形成する。And the 1st (D) and the 21st! As shown in i5,
The bump forming surfaces 2a and 2b of the copper foil 2 facing into the bump forming holes 5a and Sb have a thickness that does not protrude from the bump forming holes 5a and 5b, that is, a thickness L that does not protrude from the surface of the plating resist 5. Gold (AU) is plated to form metal bumps 6a and 6b.
次に、第１図（Ｅ）に示すように、前記メッキレジスト
４．５を、銅箔２かち取り除く。Next, as shown in FIG. 1(E), two pieces of the copper foil are removed from the plating resist 4.5.
上述の如くメッキレジスト４，５を取り除いた銅箔２の
両面に、第１図ＣＦ）に示すように、前記金属バンプ６
ａ、６ｂを含んで後述のリード８ａ、８ｂと同一形状の
エツチングレジスト７を塗布または印刷によりＮｊＩ＆
した後、銅箔２の不要部分をエツチング処理により除去
し、第１図（Ｇ）に示すような所定形状のリード８ａ、
８ｂを形成する。The metal bumps 6 are placed on both sides of the copper foil 2 from which the plating resists 4 and 5 have been removed as described above, as shown in FIG.
Nj I
After that, unnecessary portions of the copper foil 2 are removed by etching to form leads 8a in a predetermined shape as shown in FIG. 1(G).
Form 8b.
この後、前記エツチングレジスト７を取り除けば、第１
図（Ｈ）に示すように、フィルムｌに固着されたリード
８ａ、８ｂに金属バンプ６ａ。After that, if the etching resist 7 is removed, the first
As shown in Figure (H), metal bumps 6a are attached to leads 8a and 8b fixed to film l.
６ｂを形成したものになる。6b is formed.
この金属バンプ６ａ、６ｂに、第１図（Ｉ）に示すよう
に、フィルムｌのデバイス孔ｌａ内に挿入したＩＣペレ
ット９の例えばアルミニウム電極からなる外部接続端子
９ａ、９ｂを、加熱圧着治具または高周波振動を利用し
て接合する。この接合状ｌｌで、ＩＣペレット９は、フ
ィルムｌのデバイス孔ｌａ内に収納固定され、前記フィ
ルムｌとＩＣペレット９とからなるＩＣチップが完成さ
れる。As shown in FIG. 1(I), external connection terminals 9a and 9b made of, for example, aluminum electrodes of the IC pellet 9 inserted into the device hole la of the film l are attached to the metal bumps 6a and 6b using a heat-pressing jig. Or bonding using high frequency vibration. In this bonded state 11, the IC pellet 9 is housed and fixed in the device hole la of the film 1, and an IC chip consisting of the film 1 and the IC pellet 9 is completed.
しかして、上述のバンプ形成方法においては、メッキレ
ジスト５のバンプ形成孔５ａ、Ｓｂ内に臨むリード用銅
箔２のバンプ形成面２ａ、２ｂに、第２図に示すように
金属バンプ６ａ、６ｂをメッキによりバンプ形成孔５ａ
、５ｂから突出しない厚さに形成したから、メッキ金属
はバンプ形成孔５ａ、５ｂの対向面以外の周囲から付着
されることがなく、それ故金属バンプ６ａ、６ｂの頭部
端面は、１！Ｉ凸になることなく平坦に形成される。こ
れにより、この金属バンプ６ａ、６ｂの頭部端面とＩＣ
ペレット９の外部接続端子９ａ、９ｂとの接合に、部分
的な強弱を生じることがなく１強力に接合できる。しか
も、前記金属バンプ６ａ、６ｂを、前記バンプ形成孔５
ａ、５ｂから突出しない厚さに形成したこ゛とにより、
金属バンプ６ａ、６ｂの頭部がバンプ形成孔５ａ、５ｂ
よりも幅広となることがなく、隣接する端子間のピッチ
を可及的に小さくできる。In the above-described bump forming method, metal bumps 6a, 6b are formed on the bump forming surfaces 2a, 2b of the lead copper foil 2 facing into the bump forming holes 5a and Sb of the plating resist 5, as shown in FIG. Bump forming hole 5a by plating
, 5b, the plated metal is not attached from the periphery of the bump forming holes 5a, 5b other than the opposing surfaces.Therefore, the head end surfaces of the metal bumps 6a, 6b are 1! I is formed flat without becoming convex. As a result, the head end faces of the metal bumps 6a, 6b and the IC
The pellet 9 can be strongly joined to the external connection terminals 9a and 9b without causing any local strength or weakness. Moreover, the metal bumps 6a and 6b are connected to the bump forming holes 5.
By forming it to a thickness that does not protrude from a and 5b,
The heads of the metal bumps 6a, 6b form the bump forming holes 5a, 5b.
The pitch between adjacent terminals can be made as small as possible without making the terminals wider than the terminals.
なお、上記実施例において、フィルムｌにり−Ｆ８ａ・
８ｂを先に形成しておき、このリード８ａ・８ｂに金
属バンプ６ａ、６ｂを形成するようにしてもよい。In addition, in the above example, the film L-F8a・
Alternatively, the leads 8b may be formed first, and then the metal bumps 6a, 6b may be formed on the leads 8a, 8b.
さらに、この発明のバンプ形成方法は、電子式卓上計算
機等のキー接点を有するフィルム配線基板のリードに、
ＩＣペレットを接合する場合、或はＩＣカードのコンタ
クトを有する回路基板に、ＩＣペットを接合する場合等
に、広範囲に利用できる。Furthermore, the bump forming method of the present invention can be applied to the leads of a film wiring board having key contacts such as an electronic desktop calculator.
It can be used in a wide range of applications, such as when bonding IC pellets, or when bonding IC pet to a circuit board having IC card contacts.
［発明の効果］
この発明は以上詳述したように、メッキレジストのバン
プ形成孔内に臨むリード部材のバンプ形成面に、金属バ
ンプをメッキによりバンプ形成孔から突出しない厚さに
形成したから、金属バンプのｍｉｓ端面は、凹凸になる
ことなく平坦に形成され、しかも、ｊｌ［のみが幅広と
なることもないから、外部接続端子との接合を強力にで
きる上、隣接する端子間のピッチを可及的に小さくでき
る。[Effects of the Invention] As described in detail above, the present invention is characterized in that metal bumps are formed by plating on the bump forming surface of the lead member facing into the bump forming holes of the plating resist to a thickness that does not protrude from the bump forming holes. The mis end face of the metal bump is formed flat without any unevenness, and since only jl is not wide, it is possible to strengthen the bond with external connection terminals and to reduce the pitch between adjacent terminals. Can be made as small as possible.
図面はこの発明の一実施例を示し、第１図（Ａ）〜（Ｉ
）は、この発明により金属バンプを形成し、この金属バ
ンプに、ＩＣペレットの外部接続端子を接合してＩＣチ
ップを製作する工程を、その工程順に示した断面図、第
２図は同要部の拡大断面図である。
ｌ・・・・・・フィルム（フィルムキャリヤ）、１ａ・
・・・・・デバイス孔、２・・・・・・リード形成用銅
箔、２ａ。
２ｂ・・・・・・バンプ形成面、３・・・・・・接着剤
、４，５・・・・・・メッキレジスト、５ａ、５ｂ・・
・・・・バンプ形成孔、６ａ、６ｂ・・・・・・金属バ
ンプ、７・・・・・・エツチングレジスト、８ａ、８ｂ
・・・・・・リード、９・・・・・・ＩＣペレット、９
ａ、９ｂ・・・・・・外部接続端子。
特許出願人 カシオ計算機株式会社
第１図
第２ｒＡThe drawings show one embodiment of the present invention, and FIGS. 1(A) to (I)
) is a cross-sectional view showing the process of manufacturing an IC chip by forming a metal bump according to the present invention and bonding an external connection terminal of an IC pellet to the metal bump, in order of process, and FIG. 2 shows the same main part. FIG. l...Film (film carrier), 1a.
...Device hole, 2...Copper foil for lead formation, 2a. 2b...Bump forming surface, 3...Adhesive, 4, 5...Plating resist, 5a, 5b...
...Bump formation hole, 6a, 6b...Metal bump, 7...Etching resist, 8a, 8b
...Lead, 9...IC pellet, 9
a, 9b...External connection terminal. Patent applicant: Casio Computer Co., Ltd. Figure 1, Figure 2rA
Claims (1)
外部接続端子を接合するための金属バンプを形成する方
法において、 前記リード部材のバンプ形成面に臨んでバンプ形成孔を
形成する所定厚さのメッキレジストを前記リード部材に
形成し、前記バンプ形成孔内に臨む前記リード部材のバ
ンプ形成面に、前記バンプ形成孔から突出しない厚さに
金属バンプをメッキにより形成することを特徴とするバ
ンプ形成方法。[Claims] A method for forming a metal bump for bonding an external connection terminal of an IC pellet to a lead member fixed to a film, comprising: forming a bump forming hole facing the bump forming surface of the lead member. A plating resist having a predetermined thickness is formed on the lead member, and a metal bump is formed by plating on the bump forming surface of the lead member facing into the bump forming hole to a thickness that does not protrude from the bump forming hole. A bump forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259787A JPH01102935A (en) | 1987-10-16 | 1987-10-16 | Formation of bump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259787A JPH01102935A (en) | 1987-10-16 | 1987-10-16 | Formation of bump |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01102935A true JPH01102935A (en) | 1989-04-20 |
Family
ID=17338978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62259787A Pending JPH01102935A (en) | 1987-10-16 | 1987-10-16 | Formation of bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102935A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494943B1 (en) | 1999-10-28 | 2002-12-17 | Cabot Corporation | Ink jet inks, inks, and other compositions containing colored pigments |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622644A (en) * | 1985-06-28 | 1987-01-08 | Dainippon Printing Co Ltd | Manufacture of lead frame with supporting body |
| JPS62125656A (en) * | 1985-11-26 | 1987-06-06 | Keiji Iimura | Manufacture of tape carrier with bump |
| JPS62299041A (en) * | 1986-06-18 | 1987-12-26 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-10-16 JP JP62259787A patent/JPH01102935A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622644A (en) * | 1985-06-28 | 1987-01-08 | Dainippon Printing Co Ltd | Manufacture of lead frame with supporting body |
| JPS62125656A (en) * | 1985-11-26 | 1987-06-06 | Keiji Iimura | Manufacture of tape carrier with bump |
| JPS62299041A (en) * | 1986-06-18 | 1987-12-26 | Nec Corp | Manufacture of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6494943B1 (en) | 1999-10-28 | 2002-12-17 | Cabot Corporation | Ink jet inks, inks, and other compositions containing colored pigments |
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