JP7840155B2 - 二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ - Google Patents

二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ

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Publication number
JP7840155B2
JP7840155B2 JP2021568218A JP2021568218A JP7840155B2 JP 7840155 B2 JP7840155 B2 JP 7840155B2 JP 2021568218 A JP2021568218 A JP 2021568218A JP 2021568218 A JP2021568218 A JP 2021568218A JP 7840155 B2 JP7840155 B2 JP 7840155B2
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JP
Japan
Prior art keywords
layer
mean free
photoresist layer
free path
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021568218A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022533126A5 (https=
JP2022533126A (ja
Inventor
リャン・アンドリュー
シャンマ・ナダー
ワイズ・リッチ
シンハル・アキル
マホロワラ・アーパン・プラヴィン
ブラハト・グレゴリー
オースティン・ダスティン・ザッカリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JP2022533126A5 publication Critical patent/JP2022533126A5/ja
Application granted granted Critical
Publication of JP7840155B2 publication Critical patent/JP7840155B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/115—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2021568218A 2019-05-16 2020-05-15 二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ Active JP7840155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962849115P 2019-05-16 2019-05-16
US62/849,115 2019-05-16
PCT/US2020/033047 WO2020232329A1 (en) 2019-05-16 2020-05-15 Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

Publications (3)

Publication Number Publication Date
JP2022533126A JP2022533126A (ja) 2022-07-21
JP2022533126A5 JP2022533126A5 (https=) 2023-05-19
JP7840155B2 true JP7840155B2 (ja) 2026-04-03

Family

ID=73289370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021568218A Active JP7840155B2 (ja) 2019-05-16 2020-05-15 二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ

Country Status (7)

Country Link
US (1) US12372872B2 (https=)
JP (1) JP7840155B2 (https=)
KR (2) KR102795783B1 (https=)
CN (1) CN113924528B (https=)
SG (1) SG11202112490QA (https=)
TW (2) TWI842899B (https=)
WO (1) WO2020232329A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202328816A (zh) * 2021-09-03 2023-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法
TW202340524A (zh) 2022-04-13 2023-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 光敏性材料以及形成圖案化結構之方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166278A1 (en) 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275129B (en) 2001-06-22 2007-03-01 Taiwan Semiconductor Mfg Method to improve the line-width uniformity and figure fidelity of OPC mask by adding an assistant gap on the mask
TW200603150A (en) * 2004-05-21 2006-01-16 Pioneer Corp Electron beam recording substrate
US8257910B1 (en) * 2008-06-24 2012-09-04 Brewer Science Inc. Underlayers for EUV lithography
EP2783389B1 (en) * 2011-11-21 2021-03-10 Brewer Science, Inc. Structure comprising assist layers for euv lithography and method for forming it
US9104113B2 (en) * 2013-01-07 2015-08-11 International Business Machines Corporation Amplification method for photoresist exposure in semiconductor chip manufacturing
GB201405335D0 (en) * 2014-03-25 2014-05-07 Univ Manchester Resist composition
CN114899096A (zh) 2015-10-14 2022-08-12 艾克索乔纳斯公司 使用基于气体团簇离子束技术的中性射束处理的超浅蚀刻方法以及由此产生的物品
US10825684B2 (en) * 2016-03-18 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
SG11202108851RA (en) * 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166278A1 (en) 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

Also Published As

Publication number Publication date
TW202447756A (zh) 2024-12-01
TWI842899B (zh) 2024-05-21
US12372872B2 (en) 2025-07-29
WO2020232329A1 (en) 2020-11-19
KR20250054129A (ko) 2025-04-22
US20220197147A1 (en) 2022-06-23
TW202113457A (zh) 2021-04-01
CN113924528B (zh) 2024-05-24
KR102795783B1 (ko) 2025-04-11
JP2022533126A (ja) 2022-07-21
KR20210156841A (ko) 2021-12-27
SG11202112490QA (en) 2021-12-30
CN113924528A (zh) 2022-01-11

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