KR102795783B1 - 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 - Google Patents

2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 Download PDF

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KR102795783B1
KR102795783B1 KR1020217040346A KR20217040346A KR102795783B1 KR 102795783 B1 KR102795783 B1 KR 102795783B1 KR 1020217040346 A KR1020217040346 A KR 1020217040346A KR 20217040346 A KR20217040346 A KR 20217040346A KR 102795783 B1 KR102795783 B1 KR 102795783B1
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photoresist layer
substrate
layer
layers
patterning
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KR20210156841A (ko
Inventor
앤드류 리앙
네이더 샴마
리치 와이즈
아킬 싱할
아르판 프라빈 마호로왈라
그레고리 블라추트
더스틴 재커리 오스틴
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램 리써치 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/115—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020217040346A 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피 Active KR102795783B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257011688A KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962849115P 2019-05-16 2019-05-16
US62/849,115 2019-05-16
PCT/US2020/033047 WO2020232329A1 (en) 2019-05-16 2020-05-15 Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257011688A Division KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Publications (2)

Publication Number Publication Date
KR20210156841A KR20210156841A (ko) 2021-12-27
KR102795783B1 true KR102795783B1 (ko) 2025-04-11

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Application Number Title Priority Date Filing Date
KR1020217040346A Active KR102795783B1 (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피
KR1020257011688A Pending KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Family Applications After (1)

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KR1020257011688A Pending KR20250054129A (ko) 2019-05-16 2020-05-15 2 차 전자 생성을 위한 가변하는 평균 자유 경로들을 갖는 중간 층 또는 멀티-층 스택을 사용하는 EUV (extreme ultraviolet) 리소그래피

Country Status (7)

Country Link
US (1) US12372872B2 (https=)
JP (1) JP7840155B2 (https=)
KR (2) KR102795783B1 (https=)
CN (1) CN113924528B (https=)
SG (1) SG11202112490QA (https=)
TW (2) TWI842899B (https=)
WO (1) WO2020232329A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202328816A (zh) * 2021-09-03 2023-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法
TW202340524A (zh) 2022-04-13 2023-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 光敏性材料以及形成圖案化結構之方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114332A1 (ja) 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
US20130129995A1 (en) 2011-11-21 2013-05-23 Brewer Science Inc. Assist layers for euv lithography
US20170271150A1 (en) 2016-03-18 2017-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
US20180166278A1 (en) * 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275129B (en) 2001-06-22 2007-03-01 Taiwan Semiconductor Mfg Method to improve the line-width uniformity and figure fidelity of OPC mask by adding an assistant gap on the mask
US8257910B1 (en) * 2008-06-24 2012-09-04 Brewer Science Inc. Underlayers for EUV lithography
US9104113B2 (en) * 2013-01-07 2015-08-11 International Business Machines Corporation Amplification method for photoresist exposure in semiconductor chip manufacturing
GB201405335D0 (en) * 2014-03-25 2014-05-07 Univ Manchester Resist composition
CN114899096A (zh) 2015-10-14 2022-08-12 艾克索乔纳斯公司 使用基于气体团簇离子束技术的中性射束处理的超浅蚀刻方法以及由此产生的物品
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
SG11202108851RA (en) * 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114332A1 (ja) 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
US20130129995A1 (en) 2011-11-21 2013-05-23 Brewer Science Inc. Assist layers for euv lithography
US20170271150A1 (en) 2016-03-18 2017-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
US20180166278A1 (en) * 2016-12-14 2018-06-14 International Business Machines Corporation Resist Having Tuned Interface Hardmask Layer For EUV Exposure

Also Published As

Publication number Publication date
TW202447756A (zh) 2024-12-01
TWI842899B (zh) 2024-05-21
US12372872B2 (en) 2025-07-29
WO2020232329A1 (en) 2020-11-19
KR20250054129A (ko) 2025-04-22
US20220197147A1 (en) 2022-06-23
TW202113457A (zh) 2021-04-01
CN113924528B (zh) 2024-05-24
JP2022533126A (ja) 2022-07-21
KR20210156841A (ko) 2021-12-27
JP7840155B2 (ja) 2026-04-03
SG11202112490QA (en) 2021-12-30
CN113924528A (zh) 2022-01-11

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