CN113924528B - 使用具有用于二次电子生成的不同平均自由程的中间层或多层堆叠件的极紫外(euv)光刻 - Google Patents

使用具有用于二次电子生成的不同平均自由程的中间层或多层堆叠件的极紫外(euv)光刻 Download PDF

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Publication number
CN113924528B
CN113924528B CN202080036400.1A CN202080036400A CN113924528B CN 113924528 B CN113924528 B CN 113924528B CN 202080036400 A CN202080036400 A CN 202080036400A CN 113924528 B CN113924528 B CN 113924528B
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CN
China
Prior art keywords
photoresist layer
layer
layers
mean free
substrate
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CN202080036400.1A
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English (en)
Chinese (zh)
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CN113924528A (zh
Inventor
安德鲁·梁
内德·沙玛
里奇·怀斯
阿希尔·辛格哈尔
阿尔潘·普拉文·毛洛瓦拉
格雷戈里·布拉楚特
达斯汀·扎卡里·奥斯丁
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Lam Research Corp
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Lam Research Corp
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/115—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having supports or layers with means for obtaining a screen effect or for obtaining better contact in vacuum printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN202080036400.1A 2019-05-16 2020-05-15 使用具有用于二次电子生成的不同平均自由程的中间层或多层堆叠件的极紫外(euv)光刻 Active CN113924528B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962849115P 2019-05-16 2019-05-16
US62/849,115 2019-05-16
PCT/US2020/033047 WO2020232329A1 (en) 2019-05-16 2020-05-15 Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

Publications (2)

Publication Number Publication Date
CN113924528A CN113924528A (zh) 2022-01-11
CN113924528B true CN113924528B (zh) 2024-05-24

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CN202080036400.1A Active CN113924528B (zh) 2019-05-16 2020-05-15 使用具有用于二次电子生成的不同平均自由程的中间层或多层堆叠件的极紫外(euv)光刻

Country Status (7)

Country Link
US (1) US12372872B2 (https=)
JP (1) JP7840155B2 (https=)
KR (2) KR102795783B1 (https=)
CN (1) CN113924528B (https=)
SG (1) SG11202112490QA (https=)
TW (2) TWI842899B (https=)
WO (1) WO2020232329A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202328816A (zh) * 2021-09-03 2023-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法
TW202340524A (zh) 2022-04-13 2023-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 光敏性材料以及形成圖案化結構之方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114332A1 (ja) * 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
CN106462060A (zh) * 2014-03-25 2017-02-22 曼彻斯特大学 二次电子发生组合物
US9929012B1 (en) * 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
CN113574456A (zh) * 2020-01-15 2021-10-29 朗姆研究公司 用于光刻胶粘附和剂量减少的底层

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275129B (en) 2001-06-22 2007-03-01 Taiwan Semiconductor Mfg Method to improve the line-width uniformity and figure fidelity of OPC mask by adding an assistant gap on the mask
US8257910B1 (en) * 2008-06-24 2012-09-04 Brewer Science Inc. Underlayers for EUV lithography
EP2783389B1 (en) * 2011-11-21 2021-03-10 Brewer Science, Inc. Structure comprising assist layers for euv lithography and method for forming it
US9104113B2 (en) * 2013-01-07 2015-08-11 International Business Machines Corporation Amplification method for photoresist exposure in semiconductor chip manufacturing
CN114899096A (zh) 2015-10-14 2022-08-12 艾克索乔纳斯公司 使用基于气体团簇离子束技术的中性射束处理的超浅蚀刻方法以及由此产生的物品
US10825684B2 (en) * 2016-03-18 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005114332A1 (ja) * 2004-05-21 2005-12-01 Pioneer Corporation 電子ビーム記録基板
CN106462060A (zh) * 2014-03-25 2017-02-22 曼彻斯特大学 二次电子发生组合物
US9929012B1 (en) * 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
CN113574456A (zh) * 2020-01-15 2021-10-29 朗姆研究公司 用于光刻胶粘附和剂量减少的底层

Also Published As

Publication number Publication date
TW202447756A (zh) 2024-12-01
TWI842899B (zh) 2024-05-21
US12372872B2 (en) 2025-07-29
WO2020232329A1 (en) 2020-11-19
KR20250054129A (ko) 2025-04-22
US20220197147A1 (en) 2022-06-23
TW202113457A (zh) 2021-04-01
KR102795783B1 (ko) 2025-04-11
JP2022533126A (ja) 2022-07-21
KR20210156841A (ko) 2021-12-27
JP7840155B2 (ja) 2026-04-03
SG11202112490QA (en) 2021-12-30
CN113924528A (zh) 2022-01-11

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