JP2022533126A5 - - Google Patents

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Publication number
JP2022533126A5
JP2022533126A5 JP2021568218A JP2021568218A JP2022533126A5 JP 2022533126 A5 JP2022533126 A5 JP 2022533126A5 JP 2021568218 A JP2021568218 A JP 2021568218A JP 2021568218 A JP2021568218 A JP 2021568218A JP 2022533126 A5 JP2022533126 A5 JP 2022533126A5
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JP
Japan
Prior art keywords
layer
thickness
substrate
consist
layers
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JP2021568218A
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English (en)
Japanese (ja)
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JP2022533126A (ja
JP7840155B2 (ja
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Priority claimed from PCT/US2020/033047 external-priority patent/WO2020232329A1/en
Publication of JP2022533126A publication Critical patent/JP2022533126A/ja
Publication of JP2022533126A5 publication Critical patent/JP2022533126A5/ja
Application granted granted Critical
Publication of JP7840155B2 publication Critical patent/JP7840155B2/ja
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JP2021568218A 2019-05-16 2020-05-15 二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ Active JP7840155B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962849115P 2019-05-16 2019-05-16
US62/849,115 2019-05-16
PCT/US2020/033047 WO2020232329A1 (en) 2019-05-16 2020-05-15 Extreme ultraviolet (euv) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generation

Publications (3)

Publication Number Publication Date
JP2022533126A JP2022533126A (ja) 2022-07-21
JP2022533126A5 true JP2022533126A5 (https=) 2023-05-19
JP7840155B2 JP7840155B2 (ja) 2026-04-03

Family

ID=73289370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021568218A Active JP7840155B2 (ja) 2019-05-16 2020-05-15 二次電子発生のために様々な平均自由行程を有する介在層または多層積層を用いる極端紫外線（ｅｕｖ）リソグラフィ

Country Status (7)

Country Link
US (1) US12372872B2 (https=)
JP (1) JP7840155B2 (https=)
KR (2) KR102795783B1 (https=)
CN (1) CN113924528B (https=)
SG (1) SG11202112490QA (https=)
TW (2) TWI842899B (https=)
WO (1) WO2020232329A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202328816A (zh) * 2021-09-03 2023-07-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成用於極紫外光（ｅｕｖ）劑量減少之底層及包括該底層之結構的方法
TW202340524A (zh) 2022-04-13 2023-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 光敏性材料以及形成圖案化結構之方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI275129B (en) 2001-06-22 2007-03-01 Taiwan Semiconductor Mfg Method to improve the line-width uniformity and figure fidelity of OPC mask by adding an assistant gap on the mask
TW200603150A (en) * 2004-05-21 2006-01-16 Pioneer Corp Electron beam recording substrate
US8257910B1 (en) * 2008-06-24 2012-09-04 Brewer Science Inc. Underlayers for EUV lithography
EP2783389B1 (en) * 2011-11-21 2021-03-10 Brewer Science, Inc. Structure comprising assist layers for euv lithography and method for forming it
US9104113B2 (en) * 2013-01-07 2015-08-11 International Business Machines Corporation Amplification method for photoresist exposure in semiconductor chip manufacturing
GB201405335D0 (en) * 2014-03-25 2014-05-07 Univ Manchester Resist composition
CN114899096A (zh) 2015-10-14 2022-08-12 艾克索乔纳斯公司 使用基于气体团簇离子束技术的中性射束处理的超浅蚀刻方法以及由此产生的物品
US10825684B2 (en) * 2016-03-18 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Material composition and methods thereof
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
US9929012B1 (en) * 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
SG11202108851RA (en) * 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction

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