JP7830519B2 - 光電変換装置、光電変換システム、および移動体 - Google Patents

光電変換装置、光電変換システム、および移動体

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Publication number
JP7830519B2
JP7830519B2 JP2023572264A JP2023572264A JP7830519B2 JP 7830519 B2 JP7830519 B2 JP 7830519B2 JP 2023572264 A JP2023572264 A JP 2023572264A JP 2023572264 A JP2023572264 A JP 2023572264A JP 7830519 B2 JP7830519 B2 JP 7830519B2
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JP
Japan
Prior art keywords
wiring
substrate
photoelectric conversion
conversion device
circuit
Prior art date
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Active
Application number
JP2023572264A
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English (en)
Japanese (ja)
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JPWO2023131994A1 (https=
Inventor
旬史 岩田
和浩 森本
雄 前橋
良之 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JPWO2023131994A1 publication Critical patent/JPWO2023131994A1/ja
Application granted granted Critical
Publication of JP7830519B2 publication Critical patent/JP7830519B2/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023572264A 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体 Active JP7830519B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000055 WO2023131994A1 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体

Publications (2)

Publication Number Publication Date
JPWO2023131994A1 JPWO2023131994A1 (https=) 2023-07-13
JP7830519B2 true JP7830519B2 (ja) 2026-03-16

Family

ID=87073433

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JP2023572264A Active JP7830519B2 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、および移動体

Country Status (3)

Country Link
US (2) US12249616B2 (https=)
JP (1) JP7830519B2 (https=)
WO (1) WO2023131994A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025057564A (ja) * 2023-09-28 2025-04-09 キヤノン株式会社 光電変換装置
US20250143001A1 (en) * 2023-10-31 2025-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. High performance stacking pixel

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011066069A1 (en) 2009-11-30 2011-06-03 Corning Incorporated Method and apparatus for thermally debindering a cellular ceramic green body
WO2011077580A1 (ja) 2009-12-26 2011-06-30 キヤノン株式会社 固体撮像装置および撮像システム
JP2013232647A (ja) 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd 縦方向に集積化される背面照射型イメージセンサ装置
JP2014107448A (ja) 2012-11-28 2014-06-09 Nikon Corp 積層半導体装置の製造方法および積層半導体製造装置
JP2016040847A (ja) 2010-06-30 2016-03-24 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
JP2017174994A (ja) 2016-03-24 2017-09-28 ソニー株式会社 撮像装置、電子機器
WO2018186192A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
WO2019146723A1 (ja) 2018-01-26 2019-08-01 浜松ホトニクス株式会社 光検出装置
WO2020045122A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2020141122A (ja) 2019-02-25 2020-09-03 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2021002542A (ja) 2019-06-19 2021-01-07 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9299732B2 (en) 2013-10-28 2016-03-29 Omnivision Technologies, Inc. Stacked chip SPAD image sensor
JP7102159B2 (ja) * 2018-02-09 2022-07-19 キヤノン株式会社 光電変換装置、撮像システム、および、移動体
JP7679169B2 (ja) * 2019-08-08 2025-05-19 キヤノン株式会社 光電変換装置、光電変換システム
JP7384213B2 (ja) * 2019-09-30 2023-11-21 株式会社ニコン 撮像素子及び撮像装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011066069A1 (en) 2009-11-30 2011-06-03 Corning Incorporated Method and apparatus for thermally debindering a cellular ceramic green body
WO2011077580A1 (ja) 2009-12-26 2011-06-30 キヤノン株式会社 固体撮像装置および撮像システム
JP2016040847A (ja) 2010-06-30 2016-03-24 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
JP2013232647A (ja) 2012-04-27 2013-11-14 Taiwan Semiconductor Manufacturing Co Ltd 縦方向に集積化される背面照射型イメージセンサ装置
JP2014107448A (ja) 2012-11-28 2014-06-09 Nikon Corp 積層半導体装置の製造方法および積層半導体製造装置
JP2017174994A (ja) 2016-03-24 2017-09-28 ソニー株式会社 撮像装置、電子機器
WO2018186192A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
WO2019146723A1 (ja) 2018-01-26 2019-08-01 浜松ホトニクス株式会社 光検出装置
WO2020045122A1 (ja) 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2020141122A (ja) 2019-02-25 2020-09-03 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP2021002542A (ja) 2019-06-19 2021-01-07 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置

Also Published As

Publication number Publication date
JPWO2023131994A1 (https=) 2023-07-13
US20250185402A1 (en) 2025-06-05
US12249616B2 (en) 2025-03-11
WO2023131994A1 (ja) 2023-07-13
US20240355856A1 (en) 2024-10-24

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