JP7828977B2 - 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム - Google Patents

基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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JP7828977B2
JP7828977B2 JP2023569054A JP2023569054A JP7828977B2 JP 7828977 B2 JP7828977 B2 JP 7828977B2 JP 2023569054 A JP2023569054 A JP 2023569054A JP 2023569054 A JP2023569054 A JP 2023569054A JP 7828977 B2 JP7828977 B2 JP 7828977B2
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film
bonds
substrate
gas
processing
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JPWO2023119726A1 (https=
JPWO2023119726A5 (https=
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祐輔 照井
宥貴 山角
良知 橋本
雅則 中山
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
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WO2015045163A1 (ja) 2013-09-30 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及び記録媒体
WO2019035223A1 (ja) 2017-08-14 2019-02-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ プラズマ生成装置、基板処理装置および半導体装置の製造方法

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WO2015045163A1 (ja) 2013-09-30 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及び記録媒体
WO2019035223A1 (ja) 2017-08-14 2019-02-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ プラズマ生成装置、基板処理装置および半導体装置の製造方法

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