CN117981061A - 衬底处理方法、半导体器件的制造方法、衬底处理装置及程序 - Google Patents
衬底处理方法、半导体器件的制造方法、衬底处理装置及程序 Download PDFInfo
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- CN117981061A CN117981061A CN202280062453.XA CN202280062453A CN117981061A CN 117981061 A CN117981061 A CN 117981061A CN 202280062453 A CN202280062453 A CN 202280062453A CN 117981061 A CN117981061 A CN 117981061A
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| JP2021211201 | 2021-12-24 | ||
| JP2021-211201 | 2021-12-24 | ||
| PCT/JP2022/031498 WO2023119726A1 (ja) | 2021-12-24 | 2022-08-22 | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
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| KR (1) | KR20240119078A (https=) |
| CN (1) | CN117981061A (https=) |
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| JP5864637B2 (ja) * | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP5788448B2 (ja) * | 2013-09-09 | 2015-09-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| KR101846850B1 (ko) * | 2013-09-30 | 2018-04-09 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 장치, 기판 처리 시스템 및 기록 매체 |
| JP6490374B2 (ja) | 2014-09-24 | 2019-03-27 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| CN118315255A (zh) * | 2017-08-14 | 2024-07-09 | 株式会社国际电气 | 等离子体生成装置 |
| US10971357B2 (en) * | 2018-10-04 | 2021-04-06 | Applied Materials, Inc. | Thin film treatment process |
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| JPWO2023119726A1 (https=) | 2023-06-29 |
| US20240234132A1 (en) | 2024-07-11 |
| JP7828977B2 (ja) | 2026-03-12 |
| KR20240119078A (ko) | 2024-08-06 |
| TWI864491B (zh) | 2024-12-01 |
| TW202330971A (zh) | 2023-08-01 |
| WO2023119726A1 (ja) | 2023-06-29 |
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