JP7814873B2 - レーザー加工装置、レーザー剥離方法および半導体装置の製造方法 - Google Patents

レーザー加工装置、レーザー剥離方法および半導体装置の製造方法

Info

Publication number
JP7814873B2
JP7814873B2 JP2021152673A JP2021152673A JP7814873B2 JP 7814873 B2 JP7814873 B2 JP 7814873B2 JP 2021152673 A JP2021152673 A JP 2021152673A JP 2021152673 A JP2021152673 A JP 2021152673A JP 7814873 B2 JP7814873 B2 JP 7814873B2
Authority
JP
Japan
Prior art keywords
laser
stage
substrate
irradiation device
laser irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021152673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023044571A (ja
JP2023044571A5 (https=
Inventor
拓郎 大久保
秀和 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Kioxia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kioxia Corp filed Critical Kioxia Corp
Priority to JP2021152673A priority Critical patent/JP7814873B2/ja
Priority to TW110141846A priority patent/TWI838661B/zh
Priority to CN202111478813.8A priority patent/CN115815815A/zh
Priority to US17/653,290 priority patent/US20230105004A1/en
Publication of JP2023044571A publication Critical patent/JP2023044571A/ja
Publication of JP2023044571A5 publication Critical patent/JP2023044571A5/ja
Application granted granted Critical
Publication of JP7814873B2 publication Critical patent/JP7814873B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multi-focusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electromagnetism (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2021152673A 2021-09-17 2021-09-17 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法 Active JP7814873B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021152673A JP7814873B2 (ja) 2021-09-17 2021-09-17 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法
TW110141846A TWI838661B (zh) 2021-09-17 2021-11-10 雷射加工裝置、雷射剝離方法及半導體裝置的製造方法
CN202111478813.8A CN115815815A (zh) 2021-09-17 2021-12-06 激光加工装置、激光剥离方法以及半导体装置的制造方法
US17/653,290 US20230105004A1 (en) 2021-09-17 2022-03-03 Processing apparatus using laser, method of processing a substrate using laser and method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021152673A JP7814873B2 (ja) 2021-09-17 2021-09-17 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2023044571A JP2023044571A (ja) 2023-03-30
JP2023044571A5 JP2023044571A5 (https=) 2024-09-20
JP7814873B2 true JP7814873B2 (ja) 2026-02-17

Family

ID=85516112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021152673A Active JP7814873B2 (ja) 2021-09-17 2021-09-17 レーザー加工装置、レーザー剥離方法および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US20230105004A1 (https=)
JP (1) JP7814873B2 (https=)
CN (1) CN115815815A (https=)
TW (1) TWI838661B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026038301A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
WO2026038302A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
CN121890269A (zh) * 2024-08-13 2026-04-17 东京毅力科创株式会社 半导体装置的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013172110A1 (ja) 2012-05-16 2013-11-21 東京応化工業株式会社 支持体分離方法および支持体分離装置
WO2020090896A1 (ja) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置
US20200201281A1 (en) 2018-12-20 2020-06-25 Carl Zeiss Jena Gmbh Device and Method for the Controlled Processing of a Workpiece with Processing Radiation
JP2021506106A (ja) 2017-12-01 2021-02-18 シリコン ジェネシス コーポレーション 三次元集積回路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324195B1 (en) * 1999-01-13 2001-11-27 Kaneka Corporation Laser processing of a thin film
DE112009001200B4 (de) * 2008-06-04 2016-03-10 Mitsubishi Electric Corp. Laserbearbeitungsverfahren und Laserbearbeitungsvorrichtung hierfür
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
KR101117732B1 (ko) * 2010-01-19 2012-02-24 삼성모바일디스플레이주식회사 기판 밀봉에 사용되는 레이저 빔 조사 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
CN102859676A (zh) * 2010-02-03 2013-01-02 Limo专利管理有限及两合公司 用于对太阳能电池的片状基本材料进行热处理的方法和装置
JP2013046924A (ja) * 2011-07-27 2013-03-07 Toshiba Mach Co Ltd レーザダイシング方法
JP5977532B2 (ja) * 2012-02-20 2016-08-24 東京応化工業株式会社 支持体分離方法及び支持体分離装置
KR102161241B1 (ko) * 2013-03-15 2020-09-29 어플라이드 머티어리얼스, 인코포레이티드 펄스형 광-여기된 증착 및 에칭을 위한 장치 및 방법들
DE102014202801B4 (de) * 2014-02-17 2023-08-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
JP6512063B2 (ja) * 2015-10-28 2019-05-15 東京エレクトロン株式会社 成膜装置
WO2017154597A1 (ja) * 2016-03-09 2017-09-14 三菱電機株式会社 熱処理装置、熱処理方法、レーザアニール装置、および、レーザアニール方法
JP6809304B2 (ja) * 2017-03-10 2021-01-06 東京エレクトロン株式会社 成膜装置
US10840141B2 (en) * 2018-06-18 2020-11-17 Shin-Etsu Engineering Co., Ltd. Workpiece-separating device and workpiece-separating method
KR102270780B1 (ko) * 2019-04-30 2021-06-30 세메스 주식회사 막질 제거 방법, 기판 처리 방법 및 기판 처리 장치
JP7339031B2 (ja) * 2019-06-28 2023-09-05 株式会社ディスコ レーザー加工装置
JP7721257B2 (ja) * 2020-06-08 2025-08-12 浜松ホトニクス株式会社 加工物の製造方法、加工物、及び、加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013172110A1 (ja) 2012-05-16 2013-11-21 東京応化工業株式会社 支持体分離方法および支持体分離装置
JP2021506106A (ja) 2017-12-01 2021-02-18 シリコン ジェネシス コーポレーション 三次元集積回路
WO2020090896A1 (ja) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置
US20220009038A1 (en) 2018-10-30 2022-01-13 Hamamatsu Photonics K.K. Laser machining device
US20200201281A1 (en) 2018-12-20 2020-06-25 Carl Zeiss Jena Gmbh Device and Method for the Controlled Processing of a Workpiece with Processing Radiation

Also Published As

Publication number Publication date
CN115815815A (zh) 2023-03-21
TWI838661B (zh) 2024-04-11
TW202314831A (zh) 2023-04-01
JP2023044571A (ja) 2023-03-30
US20230105004A1 (en) 2023-04-06

Similar Documents

Publication Publication Date Title
JP7814873B2 (ja) レーザー加工装置、レーザー剥離方法および半導体装置の製造方法
JP5479454B2 (ja) ガラス基板内に微細構造を形成するための方法およびシステム
US9312178B2 (en) Method of dicing thin semiconductor substrates
JP6452490B2 (ja) 半導体チップの生成方法
JP4027930B2 (ja) ポリゴンミラーと利用したレーザー加工装置及び方法
CN103943567A (zh) 晶片加工方法
US20140073224A1 (en) Method for processing edge surface and edge surface processing apparatus
JP2023044571A5 (https=)
JP7746429B2 (ja) レーザ加工装置、及び、レーザ加工方法
WO2010095671A1 (ja) 太陽電池パネルのレーザ加工方法
KR20220035442A (ko) 처리 장치 및 처리 방법
JP2022165203A (ja) 積層ウェーハの研削方法
TWI903011B (zh) 基板處理裝置、基板處理方法及基板製造方法
US12506015B2 (en) Semiconductor wafer thinned by horizontal stealth lasing
KR102884576B1 (ko) 기판 처리 장치 및 기판 처리 방법
US20240096682A1 (en) Processing apparatus using laser, method of laser lift-off and method of manufacturing semiconductor device
KR102642496B1 (ko) 적층형 소자의 제조 방법
CN1939644B (zh) 激光加工方法以及激光加工装置
JP3764155B2 (ja) レーザ加工方法及びレーザ加工装置
JP2019009273A (ja) ウェーハの加工方法
JP6791585B2 (ja) ウェーハの加工方法
KR20260016511A (ko) 기판 처리 방법 및 기판 처리 장치
JP7690038B2 (ja) 基板処理方法及び基板処理装置
JP7625345B2 (ja) チップの製造方法
KR20120016453A (ko) 레이저 조사방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240910

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240910

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250627

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250715

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250904

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260204

R150 Certificate of patent or registration of utility model

Ref document number: 7814873

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150