JP7805956B2 - 光電変換素子、光検出装置、光検出システム、電子機器および移動体 - Google Patents
光電変換素子、光検出装置、光検出システム、電子機器および移動体Info
- Publication number
- JP7805956B2 JP7805956B2 JP2022570020A JP2022570020A JP7805956B2 JP 7805956 B2 JP7805956 B2 JP 7805956B2 JP 2022570020 A JP2022570020 A JP 2022570020A JP 2022570020 A JP2022570020 A JP 2022570020A JP 7805956 B2 JP7805956 B2 JP 7805956B2
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- photoelectric conversion
- light
- optical filter
- conversion element
- conversion unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/184—Infrared image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
- H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
- G02B23/24—Instruments or systems for viewing the inside of hollow bodies, e.g. fibrescopes
- G02B23/2407—Optical details
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020208716 | 2020-12-16 | ||
| JP2020208716 | 2020-12-16 | ||
| PCT/JP2021/046110 WO2022131268A1 (ja) | 2020-12-16 | 2021-12-14 | 光電変換素子、光検出装置、光検出システム、電子機器および移動体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022131268A1 JPWO2022131268A1 (https=) | 2022-06-23 |
| JPWO2022131268A5 JPWO2022131268A5 (https=) | 2024-11-27 |
| JP7805956B2 true JP7805956B2 (ja) | 2026-01-26 |
Family
ID=82057809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022570020A Active JP7805956B2 (ja) | 2020-12-16 | 2021-12-14 | 光電変換素子、光検出装置、光検出システム、電子機器および移動体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12520607B2 (https=) |
| EP (1) | EP4266377A4 (https=) |
| JP (1) | JP7805956B2 (https=) |
| KR (1) | KR20230117569A (https=) |
| CN (1) | CN116686097A (https=) |
| WO (1) | WO2022131268A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7805940B2 (ja) * | 2020-09-25 | 2026-01-26 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| US12604551B2 (en) * | 2022-01-14 | 2026-04-14 | Semiconductor Components Industries, Llc | Image pixels having IR sensors with reduced exposure to visible light |
| WO2024048488A1 (ja) * | 2022-08-31 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| JP2024060822A (ja) * | 2022-10-20 | 2024-05-07 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、電子機器、および光学素子 |
| WO2024100993A1 (ja) * | 2022-11-10 | 2024-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2024162113A1 (ja) * | 2023-02-03 | 2024-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光学素子、および電子機器 |
| JPWO2024224980A1 (https=) * | 2023-04-28 | 2024-10-31 | ||
| KR20260049625A (ko) * | 2023-08-15 | 2026-04-14 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 광 검출 장치 |
| WO2025115405A1 (ja) * | 2023-11-28 | 2025-06-05 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置 |
| WO2025177740A1 (ja) * | 2024-02-20 | 2025-08-28 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
| WO2025204245A1 (ja) * | 2024-03-28 | 2025-10-02 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076312A (ja) | 2000-08-28 | 2002-03-15 | Fuji Film Microdevices Co Ltd | 固体撮像素子 |
| JP2006121065A (ja) | 2004-09-24 | 2006-05-11 | Fuji Photo Film Co Ltd | 固体撮像素子 |
| JP2007189376A (ja) | 2006-01-12 | 2007-07-26 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びカメラモジュール |
| JP2009063777A (ja) | 2007-09-05 | 2009-03-26 | Sharp Corp | 着色マイクロレンズアレイおよびその製造方法、カラー固体撮像素子およびその製造方法、カラー表示装置およびその製造方法、電子情報機器 |
| JP2009267169A (ja) | 2008-04-25 | 2009-11-12 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2011199798A (ja) | 2010-03-24 | 2011-10-06 | Sony Corp | 物理情報取得装置、固体撮像装置、物理情報取得方法 |
| JP2013217911A (ja) | 2012-03-09 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| JP2015041780A (ja) | 2013-08-22 | 2015-03-02 | シリコンファイル テクノロジーズ インコーポレイテッドSiliconFile Technologies Inc. | 3次元積層構造のイメージセンサ |
| US20160037098A1 (en) | 2014-07-31 | 2016-02-04 | Samsung Electronics Co., Ltd. | Image Sensors Including Semiconductor Channel Patterns |
| JP2017069955A (ja) | 2015-09-30 | 2017-04-06 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 電子装置 |
| US20170243913A1 (en) | 2016-02-24 | 2017-08-24 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
| JP2017152511A (ja) | 2016-02-24 | 2017-08-31 | ソニー株式会社 | 撮像装置 |
| JP2017208496A (ja) | 2016-05-20 | 2017-11-24 | ソニー株式会社 | 固体撮像装置、及び、電子機器 |
| WO2020026720A1 (ja) | 2018-07-31 | 2020-02-06 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2020026851A1 (ja) | 2018-07-31 | 2020-02-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| JP2020113749A (ja) | 2019-01-07 | 2020-07-27 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー及びその製造方法 |
| WO2020158515A1 (ja) | 2019-01-28 | 2020-08-06 | ソニー株式会社 | 固体撮像素子、電子機器、および固体撮像素子の製造方法 |
| WO2020166309A1 (ja) | 2019-02-15 | 2020-08-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102701853B1 (ko) * | 2015-12-14 | 2024-09-02 | 삼성전자주식회사 | 이미지 센서 |
| JP2017175102A (ja) * | 2016-03-16 | 2017-09-28 | ソニー株式会社 | 光電変換素子及びその製造方法並びに撮像装置 |
| US10985201B2 (en) * | 2018-09-28 | 2021-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor including silicon over germanium layer |
| KR102625276B1 (ko) * | 2018-10-10 | 2024-01-12 | 삼성전자주식회사 | 이미지 센서 |
| KR102819931B1 (ko) * | 2019-08-01 | 2025-06-11 | 삼성전자주식회사 | 센서 및 전자 장치 |
-
2021
- 2021-12-14 WO PCT/JP2021/046110 patent/WO2022131268A1/ja not_active Ceased
- 2021-12-14 JP JP2022570020A patent/JP7805956B2/ja active Active
- 2021-12-14 CN CN202180081142.3A patent/CN116686097A/zh active Pending
- 2021-12-14 KR KR1020237018358A patent/KR20230117569A/ko active Pending
- 2021-12-14 EP EP21906630.5A patent/EP4266377A4/en active Pending
- 2021-12-14 US US18/267,712 patent/US12520607B2/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076312A (ja) | 2000-08-28 | 2002-03-15 | Fuji Film Microdevices Co Ltd | 固体撮像素子 |
| JP2006121065A (ja) | 2004-09-24 | 2006-05-11 | Fuji Photo Film Co Ltd | 固体撮像素子 |
| JP2007189376A (ja) | 2006-01-12 | 2007-07-26 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びカメラモジュール |
| JP2009063777A (ja) | 2007-09-05 | 2009-03-26 | Sharp Corp | 着色マイクロレンズアレイおよびその製造方法、カラー固体撮像素子およびその製造方法、カラー表示装置およびその製造方法、電子情報機器 |
| JP2009267169A (ja) | 2008-04-25 | 2009-11-12 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| JP2011199798A (ja) | 2010-03-24 | 2011-10-06 | Sony Corp | 物理情報取得装置、固体撮像装置、物理情報取得方法 |
| JP2013217911A (ja) | 2012-03-09 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の駆動方法 |
| JP2015041780A (ja) | 2013-08-22 | 2015-03-02 | シリコンファイル テクノロジーズ インコーポレイテッドSiliconFile Technologies Inc. | 3次元積層構造のイメージセンサ |
| US20160037098A1 (en) | 2014-07-31 | 2016-02-04 | Samsung Electronics Co., Ltd. | Image Sensors Including Semiconductor Channel Patterns |
| JP2017069955A (ja) | 2015-09-30 | 2017-04-06 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 電子装置 |
| US20170243913A1 (en) | 2016-02-24 | 2017-08-24 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
| JP2017152511A (ja) | 2016-02-24 | 2017-08-31 | ソニー株式会社 | 撮像装置 |
| JP2017208496A (ja) | 2016-05-20 | 2017-11-24 | ソニー株式会社 | 固体撮像装置、及び、電子機器 |
| WO2020026720A1 (ja) | 2018-07-31 | 2020-02-06 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2020026851A1 (ja) | 2018-07-31 | 2020-02-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| JP2020113749A (ja) | 2019-01-07 | 2020-07-27 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンサー及びその製造方法 |
| WO2020158515A1 (ja) | 2019-01-28 | 2020-08-06 | ソニー株式会社 | 固体撮像素子、電子機器、および固体撮像素子の製造方法 |
| WO2020166309A1 (ja) | 2019-02-15 | 2020-08-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
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| Publication number | Publication date |
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| KR20230117569A (ko) | 2023-08-08 |
| EP4266377A1 (en) | 2023-10-25 |
| JPWO2022131268A1 (https=) | 2022-06-23 |
| WO2022131268A1 (ja) | 2022-06-23 |
| EP4266377A4 (en) | 2024-05-08 |
| US20240055465A1 (en) | 2024-02-15 |
| US12520607B2 (en) | 2026-01-06 |
| CN116686097A (zh) | 2023-09-01 |
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