JPWO2024224980A1 - - Google Patents

Info

Publication number
JPWO2024224980A1
JPWO2024224980A1 JP2025516658A JP2025516658A JPWO2024224980A1 JP WO2024224980 A1 JPWO2024224980 A1 JP WO2024224980A1 JP 2025516658 A JP2025516658 A JP 2025516658A JP 2025516658 A JP2025516658 A JP 2025516658A JP WO2024224980 A1 JPWO2024224980 A1 JP WO2024224980A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025516658A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024224980A1 publication Critical patent/JPWO2024224980A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184Infrared image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
JP2025516658A 2023-04-28 2024-04-04 Pending JPWO2024224980A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023075177 2023-04-28
PCT/JP2024/013936 WO2024224980A1 (ja) 2023-04-28 2024-04-04 固体撮像装置及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2024224980A1 true JPWO2024224980A1 (https=) 2024-10-31

Family

ID=93256284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025516658A Pending JPWO2024224980A1 (https=) 2023-04-28 2024-04-04

Country Status (6)

Country Link
EP (1) EP4704155A1 (https=)
JP (1) JPWO2024224980A1 (https=)
KR (1) KR20260002891A (https=)
CN (1) CN121128340A (https=)
TW (1) TW202447947A (https=)
WO (1) WO2024224980A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02299265A (ja) * 1989-05-15 1990-12-11 Fujitsu Ltd 赤外線検知素子の製造方法
JPH05347399A (ja) * 1992-06-12 1993-12-27 Japan Energy Corp 赤外線検出装置
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置
JP2017112169A (ja) * 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
WO2018154644A1 (ja) * 2017-02-22 2018-08-30 オリンパス株式会社 固体撮像装置、蛍光観察内視鏡装置、および固体撮像装置の製造方法
EP3886183B1 (en) * 2018-11-19 2023-06-14 Panasonic Intellectual Property Management Co., Ltd. Imaging device and imaging system
US10950638B2 (en) * 2019-03-29 2021-03-16 Toyota Motor Engineering & Manufacturing North America, Inc. Tunable imaging systems and methods thereof
DE112020002994T5 (de) * 2019-06-21 2022-03-17 Sony Semiconductor Solutions Corporation Fotoelektrisches umwandlungselement, fotodetektor, fotodetektionssystem,elektronische einrichtung und mobiler körper
WO2022130776A1 (ja) * 2020-12-16 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出システム、電子機器および移動体
WO2022131268A1 (ja) * 2020-12-16 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、光検出システム、電子機器および移動体

Also Published As

Publication number Publication date
CN121128340A (zh) 2025-12-12
TW202447947A (zh) 2024-12-01
EP4704155A1 (en) 2026-03-04
WO2024224980A1 (ja) 2024-10-31
KR20260002891A (ko) 2026-01-06

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