KR20260002891A - 고체 촬상 장치 및 전자 기기 - Google Patents

고체 촬상 장치 및 전자 기기

Info

Publication number
KR20260002891A
KR20260002891A KR1020257037896A KR20257037896A KR20260002891A KR 20260002891 A KR20260002891 A KR 20260002891A KR 1020257037896 A KR1020257037896 A KR 1020257037896A KR 20257037896 A KR20257037896 A KR 20257037896A KR 20260002891 A KR20260002891 A KR 20260002891A
Authority
KR
South Korea
Prior art keywords
pixel
infrared light
state imaging
solid
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257037896A
Other languages
English (en)
Korean (ko)
Inventor
히데키 고바야시
요스케 니타
스구루 사이토
노부토시 후지이
요시후미 자이젠
아키히로 우라타
슌스케 후루세
šœ스케 후루세
나오유키 사토
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20260002891A publication Critical patent/KR20260002891A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020257037896A 2023-04-28 2024-04-04 고체 촬상 장치 및 전자 기기 Pending KR20260002891A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-075177 2023-04-28
JP2023075177 2023-04-28
PCT/JP2024/013936 WO2024224980A1 (ja) 2023-04-28 2024-04-04 固体撮像装置及び電子機器

Publications (1)

Publication Number Publication Date
KR20260002891A true KR20260002891A (ko) 2026-01-06

Family

ID=93256284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257037896A Pending KR20260002891A (ko) 2023-04-28 2024-04-04 고체 촬상 장치 및 전자 기기

Country Status (6)

Country Link
EP (1) EP4704155A1 (https=)
JP (1) JPWO2024224980A1 (https=)
KR (1) KR20260002891A (https=)
CN (1) CN121128340A (https=)
TW (1) TW202447947A (https=)
WO (1) WO2024224980A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02299265A (ja) * 1989-05-15 1990-12-11 Fujitsu Ltd 赤外線検知素子の製造方法
JPH05347399A (ja) * 1992-06-12 1993-12-27 Japan Energy Corp 赤外線検出装置
JP2017112169A (ja) * 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
WO2018154644A1 (ja) * 2017-02-22 2018-08-30 オリンパス株式会社 固体撮像装置、蛍光観察内視鏡装置、および固体撮像装置の製造方法
EP3886183B1 (en) * 2018-11-19 2023-06-14 Panasonic Intellectual Property Management Co., Ltd. Imaging device and imaging system
US10950638B2 (en) * 2019-03-29 2021-03-16 Toyota Motor Engineering & Manufacturing North America, Inc. Tunable imaging systems and methods thereof
DE112020002994T5 (de) * 2019-06-21 2022-03-17 Sony Semiconductor Solutions Corporation Fotoelektrisches umwandlungselement, fotodetektor, fotodetektionssystem,elektronische einrichtung und mobiler körper
WO2022130776A1 (ja) * 2020-12-16 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出システム、電子機器および移動体
WO2022131268A1 (ja) * 2020-12-16 2022-06-23 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、光検出システム、電子機器および移動体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013070030A (ja) 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置

Also Published As

Publication number Publication date
CN121128340A (zh) 2025-12-12
TW202447947A (zh) 2024-12-01
EP4704155A1 (en) 2026-03-04
WO2024224980A1 (ja) 2024-10-31
JPWO2024224980A1 (https=) 2024-10-31

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