WO2024224980A1 - 固体撮像装置及び電子機器 - Google Patents

固体撮像装置及び電子機器 Download PDF

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Publication number
WO2024224980A1
WO2024224980A1 PCT/JP2024/013936 JP2024013936W WO2024224980A1 WO 2024224980 A1 WO2024224980 A1 WO 2024224980A1 JP 2024013936 W JP2024013936 W JP 2024013936W WO 2024224980 A1 WO2024224980 A1 WO 2024224980A1
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Prior art keywords
pixel
infrared light
imaging device
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2024/013936
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English (en)
French (fr)
Japanese (ja)
Inventor
秀樹 小林
陽介 新田
卓 齋藤
宣年 藤井
義史 財前
章紘 浦田
駿介 古瀬
尚之 佐藤
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2025516658A priority Critical patent/JPWO2024224980A1/ja
Priority to EP24796738.3A priority patent/EP4704155A1/en
Priority to KR1020257037896A priority patent/KR20260002891A/ko
Priority to CN202480025645.2A priority patent/CN121128340A/zh
Publication of WO2024224980A1 publication Critical patent/WO2024224980A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Definitions

  • This disclosure relates to solid-state imaging devices and electronic devices.
  • an image sensor that acquires information in both the visible light band and the infrared light band is a configuration in which information on infrared light band light is acquired in a photoelectric conversion unit formed by stacking on the side opposite the incident surface of the photoelectric conversion unit that acquires the visible light band.
  • the density of the wiring for the upper (incident surface) sensor reduces the light that enters the lower sensor.
  • one of the non-limiting problems that the embodiments of the present disclosure attempt to solve is to properly receive light in the infrared light band in a pixel that receives infrared light and is formed by stacking it on a pixel that receives visible light.
  • the problems that the embodiments of the present disclosure attempt to solve can also be, as some further non-limiting examples, problems that correspond to the effects described in the embodiments.
  • a problem that corresponds to at least one of the effects described in the explanation of the embodiments of the present disclosure can be considered to be a problem that the present disclosure attempts to solve.
  • a solid-state imaging device includes a first pixel, a second pixel, a wiring layer, and an infrared light transmitting filter.
  • the first pixel receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel is formed by being stacked on the first pixel, and receives the light in the infrared light band that has passed through the first pixel, and generates a pixel signal in the infrared light band.
  • the wiring layer is formed between the first pixel and the second pixel, and includes a wiring that propagates a signal output from the first pixel.
  • An infrared light transmitting filter is provided at the light incidence surface of the second pixel.
  • the infrared light transmitting filter may be formed between the bonding surface of the wiring layer and the second pixel.
  • the infrared light transmitting filter may be formed in the wiring layer.
  • the infrared light transmitting filter may be formed between the bonding surface of the first pixel and the wiring layer.
  • the infrared light transmission filter may be formed from a material that has the property of absorbing or reflecting light in the visible light band depending on the wavelength, or a combination of materials that have the property of reflecting light.
  • the infrared light transmission filter may be formed by laminating amorphous silicon and silicon dioxide one or more times in an alternating fashion.
  • the infrared light transmitting filter may be made of a material that has the property of absorbing light in the visible light band.
  • the infrared light transmitting filter may be formed with indium phosphide.
  • the infrared light transmitting filter may be formed from a transition metal dichalcogenide material.
  • the infrared light transmitting filter may have a thickness of 1 nm or more and 200 nm or less.
  • the infrared light transmission filter may have a chalcogenide layer formed of a transition metal dichalcogenide material on the light incident surface side.
  • the chalcogenide layer may have a thickness of 1 nm or more and 200 nm or less.
  • the transition metal dichalcogenide material may be molybdenum diselenide.
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • the solid-state imaging device On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; a top surface of the wiring layer and a top surface of the infrared light transmission filter are joined together to laminate the first substrate and the second substrate; It is manufactured including the steps.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the wiring layer; On the second board, forming a second pixel that receives infrared light; a top surface of the infrared light transmission filter and a top surface of the second pixel are bonded to stack the first substrate and the second substrate. It is manufactured including the steps.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; forming a first infrared light transmitting filter that transmits infrared light on an upper surface of the wiring layer; On the second board, forming a second pixel that receives infrared light; forming a second infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; an upper surface of the first infrared light transmission filter and an upper surface of the second infrared light transmission filter are joined to stack the first substrate and the second substrate; It is manufactured including the steps.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; forming a first wiring layer including wiring for transmitting a signal of the first pixel on an upper surface of the first pixel; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the first wiring layer; forming a second wiring layer on an upper surface of the infrared light transmission filter, the second wiring layer being connected to the wiring of the first wiring layer; On the second board, forming a second pixel that receives infrared light; a top surface of the second wiring layer and a top surface of the second pixel are joined to stack the first substrate and the second substrate; It is manufactured including the steps.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the first pixel; forming a wiring layer including wiring for transmitting a signal of the first pixel on an upper surface of the infrared light transmission filter; On the second board, forming a second pixel that receives infrared light; a top surface of the wiring layer and a top surface of the second pixel are joined to stack the first substrate and the second substrate; It is manufactured including the steps.
  • the infrared light transmission filter may be formed by laminating amorphous silicon and silicon dioxide one or more times.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel by epitaxial growth; a top surface of the wiring layer and a top surface of the infrared light transmission filter are joined together to laminate the first substrate and the second substrate; It is manufactured including the steps.
  • the infrared light transmitting filter may be made of indium phosphide.
  • the second pixel may have the shape of a light receiving region formed before the first substrate and the second substrate are laminated together.
  • the second pixel may be formed in the shape of a light receiving region after the first substrate and the second substrate are laminated.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; Selectively forming a trench in at least the infrared light transmitting filter; forming an insulating film on a side surface of the infrared light transmitting filter in the trench; forming a contact on the inside of the insulating film; forming a wiring layer including wiring connected to the contact on the upper surface of the infrared light transmission filter; bonding an upper surface of the first pixel and the wiring layer to stack the first substrate and the second substrate; It is manufactured including the steps.
  • the infrared light transmitting filter may be formed from a transition metal chalcogenide material.
  • the infrared light transmitting filter may be formed with a thickness of 1 nm or more and 200 nm or less.
  • the solid-state imaging device includes: On the first board, forming a first pixel for receiving visible light; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; forming a chalcogenide layer made of a transition metal chalcogenide material on an upper surface of the infrared light transmission filter; selectively forming a trench in at least the chalcogenide layer; forming an insulating film on a side surface of the chalcogenide layer in the trench; forming a contact on the inside of the insulating film; forming a wiring layer including wiring connected to the contact on the upper surface of the chalcogenide layer; bonding an upper surface of the first pixel and the wiring layer to stack the first substrate and the second substrate; It is manufactured including the steps.
  • the infrared light transmission filter may be formed by laminating amorphous silicon and silicon dioxide one or more times.
  • the infrared light transmitting filter may be made of indium phosphide.
  • the chalcogenide layer may be formed to a thickness of 1 nm or more and 200 nm or less.
  • the chalcogenide layer may be formed from a thin film of molybdenum diselenide.
  • the device according to the embodiment of the present disclosure may have the following form as another aspect.
  • the solid-state imaging device includes a first pixel, a second pixel, a wiring layer, and an infrared light shielding film.
  • the first pixel receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel is formed by being stacked on the first pixel, and receives the light in the infrared light band that has passed through the first pixel, and generates a pixel signal in the infrared light band.
  • the wiring layer is formed between the first pixel and the second pixel, and includes a wiring that propagates a signal output from the first pixel.
  • the infrared light shielding film is provided on at least one side surface of the second pixel.
  • the infrared light blocking film may be formed on the side surface of the photoelectric conversion region of the second pixel via an insulating film.
  • the infrared light shielding film may be made of the same material as the contact electrodes.
  • the infrared light blocking film may be formed between adjacent second pixels on the same side as the incident surface of the second pixels.
  • the infrared light blocking film may be formed on a surface of the photoelectric conversion region of the second pixel opposite the incident surface of the second pixel.
  • the second pixels may be formed so that at least two of them are adjacent to each other, and may have the infrared light blocking film on adjacent sides.
  • the second pixel may receive a voltage on the incident surface side from a transparent electrode connected to the photoelectric conversion film region of the second pixel, and the transparent electrode may be electrically connected to a contact electrode at a position away from the second pixel.
  • the second pixel may receive a voltage on the incident surface side from a transparent electrode connected to the photoelectric conversion film region of the second pixel, and the transparent electrode may be electrically connected to a contact electrode at a position where it contacts adjacent second pixels via the infrared light shielding film.
  • the contact electrode may be made of a material that has light-shielding properties.
  • the contact electrode may be copper, titanium, aluminum or tungsten.
  • the contact electrode may be shared by multiple second pixels.
  • At least one of the infrared light shielding films which is made of the same material as the contact electrode, may be in an electrically floating state.
  • At least one of the infrared light shielding films which is made of the same material as the contact electrode, may be grounded.
  • At least one of the infrared light transmitting filter or the chalcogenide layer described above may be further provided.
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • the solid-state imaging device A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band; A method for manufacturing a solid-state imaging device comprising: After forming the photoelectric conversion region of the second pixel, forming a sidewall of the photoelectric conversion region; forming an infrared light shielding film on a side surface of a side wall of the photoelectric conversion region; It is manufactured including the steps.
  • the method may include the steps of:
  • the method may include the steps of:
  • the two infrared light blocking films may be formed at the same time as the formation of the electrode that supplies power to the first pixel or the second pixel.
  • the method may include the steps of:
  • the method may include the steps of:
  • the method may include the steps of:
  • the method may include the steps of:
  • the method may include the steps of:
  • the solid-state imaging device may be manufactured by including a process for forming at least one of the infrared light transmission filter or the chalcogenide layer described above.
  • the device according to the embodiment of the present disclosure may have the following form as another aspect.
  • the solid-state imaging device includes a first pixel, a second pixel, and a wiring layer.
  • the first pixel has a first photoelectric conversion region that receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel is formed by being stacked with the first pixel, and has a second photoelectric conversion region that receives light in the infrared light band that has passed through the first pixel and generates a pixel signal in the infrared light band.
  • the wiring layer is formed between the first pixel and the second pixel, and includes a wiring that propagates a signal output from the first pixel.
  • the wiring layer is The first pixel and the second pixel which are stacked are provided with the wiring in a region other than between the first photoelectric conversion region and the second photoelectric conversion region.
  • the wiring may be metal.
  • the wiring layer may not include the wiring between the first photoelectric conversion region and the second photoelectric conversion region for the stacked first pixel and second pixel.
  • the wiring layer may have holes between the first photoelectric conversion region and the second photoelectric conversion region for the stacked first pixel and second pixel, which allow light in the infrared light band that has passed through the first pixel to pass through.
  • the holes may have an anti-reflective coating.
  • the voids may have a film different from the insulating film that fills the wiring layer.
  • the film other than the insulating film that fills the wiring layer in the void may be a semiconductor film.
  • the holes may totally reflect infrared light at the boundary with the insulating film that fills the wiring layer.
  • the holes may be rectangular in cross section.
  • the holes may be elliptical or rectangular with rounded corners in cross section.
  • the holes may be rectangular with a taper in cross section.
  • the wiring layer may further be formed with an uneven shape using an insulating film of a different material.
  • This solid-state imaging device may further include at least one of the infrared light transmitting filters or chalcogenide layers described above, or at least one of the infrared light transmitting films described above.
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • a method for manufacturing a solid-state imaging device comprising: This solid-state imaging device is In a wiring layer disposed between the first pixel and the second pixel, a wiring for transmitting a signal from the first pixel is formed so as not to overlap with an incident surface of a photoelectric conversion region of the second pixel; It is manufactured including the steps.
  • the method may include the steps of:
  • the method may include the steps of:
  • the selectively removing step includes: selectively removing an insulating film formed on an upper surface of a region in which the wiring is to be formed and a region in which the void is to be formed in at least a part of the region in which the void is to be formed; performing an etching process from the region where the insulating film has been selectively removed, thereby removing the dummy metal wiring formed in the region where the void is to be formed;
  • the method may include the steps of:
  • the region in which the wiring is formed may be formed so as not to be connected to at least a portion of the region, and the region in which the voids are formed may be formed so as to be connected to at least a portion of the region.
  • the wiring is selectively removing the insulating film in a region where the wiring is to be formed; forming a barrier metal in the region of the insulating film from which the insulating film has been removed; forming the metal wiring in the region of the removed insulating film via the barrier metal;
  • the method may include the steps of:
  • the voids are In the step of forming the wiring, the insulating film is selectively removed from a region in which the void is to be formed; forming the barrier metal in the region of the removed insulating film; forming the dummy metal wiring in the region of the removed insulating film via the barrier metal; The dummy metal wiring is removed to form
  • the method may include the steps of:
  • the barrier metal may be an anti-reflection film.
  • the voids are In the step of forming the wiring, the insulating film is selectively removed from a region in which the void is to be formed; forming the barrier metal in the region of the removed insulating film; forming the dummy metal wiring in the region of the removed insulating film via the barrier metal; The dummy metal wiring and the barrier metal are removed to form
  • the method may include the steps of:
  • the method may include the steps of:
  • the method may include the steps of:
  • the wiring and the holes may be formed in multiple stages.
  • the voids are It is removed at the same time over multiple stages.
  • the method may include the steps of:
  • the voids are removed step by step,
  • the method may include the steps of:
  • the method may include the steps of:
  • the holes may be rectangular in cross section.
  • the holes may be elliptical or rectangular with rounded corners in cross section.
  • the holes may be rectangular with a taper in cross section.
  • the solid-state imaging device may be manufactured by including a process for manufacturing at least one of the infrared light transmitting filters or chalcogenide layers described above, or at least one of the infrared light transmitting films described above.
  • the device according to the embodiment of the present disclosure may have the following form as another aspect.
  • the solid-state imaging device includes a first pixel, a second pixel, and a wiring layer.
  • the first pixel receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel is formed by being stacked on the first pixel, and receives the light in the infrared light band that has passed through the first pixel, and generates a pixel signal in the infrared light band.
  • the wiring layer is formed between the first pixel and the second pixel, and includes a wiring that propagates a signal output from the first pixel.
  • the second pixel is A first electrode located on the incident surface side of the photoelectric conversion region; A second electrode is located on a surface of the photoelectric conversion region opposite to the incident surface. Equipped with.
  • the first electrode may be a transparent electrode.
  • the first electrode may be a semiconductor film.
  • the first electrode may be a metal electrode.
  • the device may further include a first contact that is connected to the first pixel and supplies power to the first pixel or acquires a signal from the first pixel, and the first contact may be formed in an element isolation portion between the second photoelectric conversion regions.
  • the device may further include a second contact connected to the first electrode, and the second contact may be formed in an element isolation portion between the second photoelectric conversion regions.
  • Each of the second pixels may have an independent second photoelectric conversion region.
  • the second pixels may share the second photoelectric conversion region, or may be formed in an element isolation portion between the second photoelectric conversion regions.
  • the solid-state imaging device may further include at least one of the infrared light transmitting filter or chalcogenide layer described above, the infrared light transmitting film described above, or the wiring layer configuration described above.
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • a method for manufacturing a solid-state imaging device comprising: This solid-state imaging device is After forming the photoelectric conversion region in the second pixel, forming a first electrode on an upper surface of the photoelectric conversion region; forming an insulating film on an upper surface of the first electrode; The insulating film is turned upside down so that the insulating film is on the lower surface.
  • Selectively removing the photoelectric conversion region Selectively removing the first electrode in a region where the photoelectric conversion region has been selectively removed; forming an insulator layer on the selectively removed photoelectric conversion region and the selectively removed region of the first electrode; forming a contact in the insulator layer that is electrically connected to the first electrode; It is manufactured including the steps.
  • a first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: This solid-state imaging device is After forming the photoelectric conversion region in the second pixel, forming a first electrode on an upper surface of the photoelectric conversion region; forming an insulating film on an upper surface of the first electrode; The insulating film is turned upside down so that the insulating film is on the lower surface.
  • a second electrode is formed on the upper surface of the photoelectric conversion region. It may include a step.
  • the first electrode may be a transparent electrode.
  • the transparent electrode may be a semiconductor film.
  • the transparent electrode may be a metal electrode.
  • the solid-state imaging device may be manufactured by including a step of manufacturing at least one of the infrared light transmitting filter or chalcogenide layer described above, the infrared light transmitting film described above, or the wiring layer formed between the first pixel and the second pixel described above.
  • the device according to the embodiment of the present disclosure may be configured as follows.
  • the solid-state imaging device includes a first pixel, a second pixel, and a wiring layer.
  • the first pixel has a first photoelectric conversion region that receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel is formed by being stacked with the first pixel, and has a second photoelectric conversion region that receives light in the infrared light band that has passed through the first pixel and generates a pixel signal in the infrared light band.
  • the wiring layer is formed between the first pixel and the second pixel, and includes a wiring that propagates a signal output from the first pixel.
  • the wiring layer is The first pixel and the second pixel that are stacked together are provided with the wiring below an element isolation portion of the first pixel.
  • the wiring that transmits the signal from the first pixel may be formed above the pixel separation portion of the second pixel.
  • the wiring that propagates the signal from the first pixel may be output via a contact formed at the edge of the area in which the second pixel is arranged.
  • the wiring that propagates the signal from the first pixel may be output via a contact formed in the pixel separation of the second pixel.
  • the element isolation portion of the first pixel may be an RDTI.
  • the element isolation portion of the first pixel may be an RDTI having metal embedded therein.
  • the solid-state imaging device may further include at least one of the infrared light transmitting filter or chalcogenide layer described above, the infrared light transmitting film described above, the wiring layer configuration described above, or the first electrode and second electrode described above.
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • a first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: This solid-state imaging device is In a wiring layer disposed between the first pixel and the second pixel, A wiring for transmitting a signal from the first pixel is formed so as to overlap with an element isolation portion of the first pixel. It is manufactured including the steps.
  • the solid-state imaging device may be manufactured by including a step of manufacturing at least one of the infrared light transmitting filter or chalcogenide layer described above, the infrared light transmitting film described above, the wiring layer formed between the first pixel and the second pixel described above, or the first electrode and the second electrode described above.
  • FIG. 1 is a block diagram illustrating an example of a solid-state imaging device according to an embodiment.
  • FIG. 2 is a diagram illustrating an example of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • FIG. 2 is a diagram showing an example of a top view of a sensor unit according to an embodiment.
  • FIG. 1 is a diagram showing an example of a top view of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 2 is a diagram showing an example of a top view of a sensor unit according to an embodiment.
  • FIG. 2 is a diagram showing an example of a top view of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • 5A to 5C are diagrams showing an example of a manufacturing process for a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 4 is a diagram showing an example of a cross section of a sensor unit according to an embodiment.
  • FIG. 2 is a diagram showing an example of a top view of a sensor unit according to an embodiment.
  • various diffusion layers, insulating films, semiconductor films, conductor films, etc. are not shown in the drawings or explanations within the photoelectric conversion region (light receiving region, photodiode) of the light receiving pixel formed from materials such as silicon and indium gallium arsenide, but the light receiving pixels of these image sensors are deemed to have the appropriate configuration and manufacturing process required.
  • FIG. 1 is a block diagram showing a schematic diagram of a solid-state imaging device according to one embodiment.
  • the solid-state imaging device 1 includes, for example, a sensor unit 10, a control unit 20, a power supply unit 22, a memory unit 24, a signal processing unit 26, and an interface (hereinafter referred to as I/F 28).
  • the solid-state imaging device 1 may include other components required for its own operation as appropriate.
  • the solid-state imaging device 1 is a device that performs imaging in the visible light band and imaging in the infrared light band, particularly the shortwave infrared light band, at the same time.
  • the sensor unit 10 comprises a first pixel having a photoelectric conversion element that receives light in the visible light band and outputs a signal, and a second pixel having a photoelectric conversion element that receives light in the infrared light band and outputs a signal.
  • the configuration of each pixel is not limited.
  • the exposure method of the pixel is also not particularly limited.
  • Other configurations, such as the configuration of the lens associated with the pixel, are also not limited to the extent that they are not technically inconsistent with this disclosure.
  • the first pixel outputs a signal based on the light intensity of each color of visible light incident through, for example, an RGB color filter (this does not exclude other color filter configurations).
  • the first pixel includes, for example, a photodiode (Photo Diode: PD) as a photoelectric conversion element that receives light in the visible light band.
  • PD Photo Diode
  • the first pixel may be formed with an organic photoelectric conversion film corresponding to each color, rather than with a configuration including a color filter and a photodiode.
  • the second pixel outputs a signal based on the intensity of the incident infrared light.
  • the second pixel includes, for example, a photodiode that receives infrared light as a photoelectric conversion element.
  • the first pixel and the second pixel are formed by stacking. That is, the second pixel receives infrared light that has passed through the first pixel and the wiring layer for the first pixel, and outputs a signal according to the intensity of the received infrared light.
  • the sensor unit 10 appropriately outputs a signal corresponding to the acquired visible light and a signal corresponding to the acquired infrared light to the memory unit 24 or the signal processing unit 26.
  • the control unit 20 controls each component of the solid-state imaging device 1.
  • the power supply unit 22 supplies the power required for each component of the solid-state imaging device 1.
  • the memory unit 24 stores data such as data acquired by the sensor unit 10, data processed by the signal processing unit 26, or data required for processing by the signal processing unit 26.
  • the memory unit 24 may include any storage medium, such as a memory, storage, a hard disk, a solid-state drive (SSD) or other storage medium using flash memory.
  • the signal processing unit 26 performs appropriate processing on the signal output by the sensor unit 10.
  • the signal processing unit 26 can perform signal processing on the signal itself output by the sensor unit 10, convert the signal output by the sensor unit 10 into an image signal and perform image processing on this image signal, and can also perform various types of processing on image data.
  • the processing of the signal processing unit 26 may be software-based information processing specifically realized using hardware resources.
  • data related to the software may be stored in the memory unit 24.
  • the I/F 28 is an interface that connects the inside and outside of the solid-state imaging device 1.
  • the I/F 28 may include any input/output interface, such as a network interface or a Universal Serial Bus (USB), that outputs data in the solid-state imaging device 1 to the outside and inputs requests from the outside as signals.
  • USB Universal Serial Bus
  • I/F 28 may also include input user interfaces such as buttons, touch panels, microphones, keyboards, mice, and trackballs that directly accept requests from the user, or output user interfaces such as displays and speakers.
  • input user interfaces such as buttons, touch panels, microphones, keyboards, mice, and trackballs that directly accept requests from the user, or output user interfaces such as displays and speakers.
  • FIG. 2 is a schematic diagram showing a non-limiting example of a sensor unit according to one embodiment.
  • the sensor unit 10 includes, for example, an on-chip lens (OCL), color filters (Filter(G)/(B)/(R)), a visible light photoelectric conversion element (PD(Vis)), an infrared light transmitting filter (Filter(IR)), and an infrared light photoelectric conversion element (PD(IR)).
  • OCL on-chip lens
  • color filters Finter(G)/(B)/(R)
  • PD(Vis) visible light photoelectric conversion element
  • IR infrared light transmitting filter
  • PD(IR) infrared light photoelectric conversion element
  • the on-chip lens focuses the light that is incident appropriately on the visible light filter and visible light receiving element that form the first pixel.
  • the first pixel is formed with a visible light filter and a photoelectric conversion element for visible light.
  • the first pixel outputs a signal according to the intensity of the light received by the photoelectric conversion element through the visible light filter corresponding to the wavelength of each color by photoelectric conversion.
  • the second pixel is formed with a photoelectric conversion element for infrared light.
  • the second pixel outputs a signal according to the intensity of light received by the photoelectric conversion element through an infrared light transmission filter that corresponds to the wavelength of infrared light, by photoelectric conversion.
  • the signals acquired by the stacked first and second pixels do not shift in their planar positions. This makes it possible to acquire visible light images and infrared light images with little deviation in coordinates between the first and second pixels.
  • FIG. 2 is shown as a non-limiting example, and does not exclude other configurations.
  • the sensor unit 10 has a second pixel for every 2 ⁇ 2 first pixels, but the number of first pixels relative to a second pixel is not limited, such as for one first pixel, 3 ⁇ 3 second pixels, or 2 ⁇ 3 first pixels.
  • the sensor unit 10 has one on-chip lens for one first pixel, but the ratio of the numbers is not limited to 1:1.
  • FIG. 3 is a diagram showing an example of a cross section of a sensor unit according to one embodiment.
  • the sensor unit 10 includes a first pixel 100, a second pixel 102, an infrared light transmitting filter 104, and a wiring layer 106 as layers, which are formed by stacking each of them.
  • the dotted lines indicate the interface (bonding surface) between the first pixel 100 and the wiring layer 106, or the interface (bonding surface) between the wiring layer 106 and the second pixel 102.
  • the first pixel 100 comprises a color filter 110 and a first photoelectric conversion region 112.
  • the first pixel 100 obtains light intensity information based on the color of the wavelengths transmitted by the color filter 110.
  • the pixel transistor 116 is not included in the first pixel 100, but the pixel transistor 116 may be considered as a component of the first pixel 100.
  • the first photoelectric conversion regions 112 are formed with an insulating film 122 or a reflective film between adjacent first photoelectric conversion regions 112 as necessary to prevent color mixing.
  • the on-chip lens 108 appropriately focuses the incident light onto the first photoelectric conversion regions 112 via the color filter 110.
  • the first photoelectric conversion region 112 outputs a signal according to the intensity of the incident light.
  • the signal is output appropriately to the memory unit 24, the signal processing unit 26, etc. via the pixel transistor 116 belonging to the first pixel 100 at an appropriate timing through the wiring 118 formed in the wiring layer 106, and the contact 120 passing from the wiring layer 106 to the region in which the second pixel is formed.
  • contact refers to an electrode made of a conductor such as metal or a semiconductor material that supplies power to an electrically connected electrode.
  • a conductor such as metal or a semiconductor material that supplies power to an electrically connected electrode.
  • an insulating film may be formed in areas that are not electrically connected, if necessary, to prevent the contact from being electrically connected to the surroundings.
  • the light-shielding film 114 is appropriately arranged as necessary to prevent light from leaking from the first photoelectric conversion region 112 in the first pixel 100 to other first photoelectric conversion regions 112.
  • the light-shielding film 114 may be an absorptive film that absorbs light, a reflective film that reflects light, or a combination of these.
  • the wiring 118 may be made of polysilicon (Poly-Si), which is relatively transparent to light in the infrared light band.
  • the infrared light transmission filter 104 is provided at the junction surface between the wiring layer 106 and the second pixel 102.
  • the infrared light transmission filter 104 transmits light in the infrared light band that has passed through the first pixel 100, and allows it to enter the second photoelectric conversion region 124 of the second pixel 102.
  • the infrared light transmission filter 104 is made of a material or a combination of materials that has the property of absorbing or reflecting light of wavelengths in the visible light band depending on the wavelength band.
  • the second pixel 102 In the second pixel 102, light incident on the second photoelectric conversion region 124 via the infrared light transmitting filter 104 is converted into a signal by photoelectric conversion, and output via the contact 126.
  • an oxide film (not shown) may be provided on the upper and lower surfaces of the second pixel 102. This oxide film may be a tetraethoxysilane (TEOS) film.
  • TEOS tetraethoxysilane
  • the first photoelectric conversion region 112 is formed, for example, using silicon.
  • the second photoelectric conversion region 124 is formed, for example, using indium gallium arsenide (InGaAs).
  • the infrared light transmission filter 104 may be formed by laminating, for example, an amorphous silicon (a-Si) film having a relatively high refractive index and a silicon dioxide (SiO 2 ) film having a lower refractive index one or more times.
  • the infrared light transmission filter 104 is formed by laminating, for example, a plurality of a-Si layers and a plurality of SiO 2 layers alternately multiple times.
  • the infrared light transmission filter 104 may have a film having a high refractive index formed of a material such as Poly-Si, titanium dioxide ( TiO2 ), niobium oxide ( Nb2O5 ) , zirconium dioxide ( ZrO2 ), aluminum nitride (AlN), etc.
  • the infrared light transmission filter 104 may have a film having a low refractive index formed of a material such as silicon nitride ( Si3N4 ), aluminum oxide ( Al2O3 ), magnesium oxide (MgO), etc.
  • This laminated film functions as a filter with high reflectance in the visible light band and low transmittance in the infrared light band. Therefore, in addition to the function of eliminating light other than the infrared light band in the second pixel 102, it also has the function of allowing reflected light in the visible light band to be re-entered into the first photoelectric conversion region 112.
  • the infrared light transmission filter 104 may be formed of an indium phosphide (InP) film.
  • InP indium phosphide
  • the infrared light transmission filter 104 has a high light absorption rate in the visible light band and a high light transmittance in the infrared light band. This allows the second pixel 102 to appropriately reject light other than the infrared light band.
  • the transmittance in the visible light band and the infrared light band can be appropriately selected by the thickness of the InP film.
  • Figure 4 shows an example of using InP for the infrared light transmission filter 104. Due to its characteristics, InP generates photoelectric conversion with incident light. For this reason, when using InP, it is desirable to properly release the voltage generated by photoelectric conversion. For this reason, for example, as shown in Figure 4, it is desirable to form contacts 128 that connect to the infrared light transmission filter 104 and properly remove the charge generated in the InP.
  • the infrared light transmitting filter 104 can conduct electricity. For this reason, an insulating film 122 is formed at the interface between the infrared light transmitting filter 104 and the contact 120.
  • the sensor unit 10 includes a first pixel 100 that receives light in the visible light band and generates a pixel signal in the visible light band, and a second pixel 102 that is formed by stacking with the first pixel 100.
  • the second pixel 102 receives light in the infrared light band that has passed through the first pixel 100 and generates a pixel signal in the infrared light band.
  • a wiring layer 106 that has wiring for supplying the signal output by the first pixel 100 to a downstream circuit.
  • An infrared light transmission filter is provided on the incident surface side of the second pixel 102 to efficiently allow light in the infrared light band to enter the second photoelectric conversion region.
  • the solid-state imaging device 1 uses a filter that removes light in the visible light band that has passed through the first pixel while transmitting light in the infrared light band, making it possible to form an image sensor that is efficient even in a configuration having stacked first and second pixels and that can reduce the effects of visible light.
  • the solid-state imaging device 1 reduces the influence of color mixing, and also promotes re-entry of visible light into the first pixel by reflection by using an infrared light transmission filter such as an a-Si film and an SiO2 film.
  • an infrared light transmission filter such as an a-Si film and an SiO2 film
  • it can also be used as a junction surface of a heterostructure.
  • Infrared light transmitting filter 104 as shown in Figure 3 can be easily formed during the semiconductor manufacturing process.
  • FIG. 5 is a diagram showing a modified example of the first embodiment.
  • the infrared light transmitting filter 104 may be provided at the interface (junction surface) between the first photoelectric conversion region 112 (first pixel 100) and the wiring layer 106.
  • an insulating film 122 is provided appropriately according to the conductive and insulating state of the wiring, etc.
  • the infrared light transmission filter 104 When the infrared light transmission filter 104 is formed as a laminate of materials with different refractive indices, such as an a-Si film and a SiO2 film, the infrared light transmission filter 104 has a reflection characteristic for light in the visible light band, as described above. Therefore, by using the arrangement as shown in Fig. 5, the first pixel 100 has a more efficient conversion efficiency in the first photoelectric conversion region 112 of the light reflected from the infrared light transmission filter 104 compared to Fig. 3, and it is possible to reduce the possibility of color mixing occurring in the first pixel 100.
  • the thickness of the infrared light transmitting filter 104 is equal to the thickness of the pixel transistor 116, but this is for illustrative purposes only and is not limiting.
  • the infrared light transmitting filter 104 may be thinner than the pixel transistor 116, i.e., at least a portion of the pixel transistor 116 protrudes from the infrared light transmitting filter 104, or may be thicker than the pixel transistor 116, i.e., the pixel transistor 116 is completely contained within the area of the infrared light transmitting filter 104.
  • FIG. 6 is a modified example of FIG. 5.
  • the first pixel 100 can be considered to include the pixel transistor 116.
  • the area up to the pixel transistor 116 can be considered as the first pixel 100, and an infrared light transmitting filter 104 can be disposed at the interface between the pixel transistor 116 and the wiring layer.
  • an insulating film 122 is appropriately provided according to the conductive and insulating state of the wiring, etc.
  • the infrared light transmitting filter 104 may be disposed below the pixel transistor 116 in the drawing.
  • the infrared light transmitting filter 104 does not need to be disposed in areas where light does not directly pass, such as directly below the light shielding film 114. In other words, the infrared light transmitting filter 104 may selectively have an opening.
  • FIG. 7 shows a modified example of the first embodiment.
  • an infrared light transmitting filter 104 may be disposed inside the wiring layer 106.
  • an insulating film 122 needs to be disposed appropriately so that the wiring 118 and the infrared light transmitting filter 104 are not electrically connected to each other.
  • the Poly-Si that forms the wiring 118 can also be used as part of the infrared light transmitting filter 104.
  • FIGS. 8 to 15 are diagrams showing an example of a manufacturing process for a sensor unit 10 according to one embodiment.
  • This manufacturing process is typically a manufacturing process for a configuration including an infrared light transmitting filter 104 formed by stacking materials with different refractive indices.
  • a first substrate 12 is formed.
  • the first substrate 12 is formed by forming the first pixel 100 on a silicon substrate and forming a wiring layer 106 on the upper surface of the first substrate 12.
  • the wiring layer 106 is formed with, for example, Poly-Si wiring 118.
  • a second substrate 14 is formed.
  • second pixels 102 formed into a pixel shape are formed on the second substrate 14.
  • An infrared light transmitting filter 104 is formed on the top surface of the layer including the second pixels 102, thereby forming the second substrate 14.
  • an insulating film is appropriately formed on the upper surface of the first photoelectric conversion region 112 of the first pixel 100 in FIG. 8 and the upper surface of the second photoelectric conversion region 124 of the second pixel 102 in FIG. 9, but is not shown.
  • the top surface of the second substrate 14 in FIG. 9 is bonded to the top surface of the first substrate 12 in FIG. 8, and the first substrate 12 and the second substrate 14 are laminated. This bonding forms a laminated first pixel 100 and second pixel 102.
  • a trench is selectively formed from the top surface of FIG. 11 to the wiring 118 so as to avoid the second pixel 102.
  • the trench is formed by any method, for example, STI (Shallow Trench Isolation).
  • the trench is selectively formed at the same time or at a different time so as to reach the second photoelectric conversion region 124.
  • an insulating film 122 is formed on the sidewall of the trench.
  • the insulating film 122 can be formed by any method.
  • a contact electrode is formed by depositing a conductor, such as a metal such as copper (Cu), tungsten (W), titanium (Ti), or aluminum (Al), within the trench. This process forms contacts 120, 126.
  • a conductor such as a metal such as copper (Cu), tungsten (W), titanium (Ti), or aluminum (Al)
  • pixel transistors etc. relating to the second pixel 102 can be formed, or pixel transistors etc. relating to the second pixel 102 can be formed in advance, and contacts 126 can be formed to electrodes such as the gate electrodes of these transistors.
  • a metal wiring layer 130 having appropriate wiring is formed to form the sensor portion 10.
  • an InGaAs layer 132 that forms the second photoelectric conversion region 124 on a silicon substrate is formed on the second substrate 14.
  • An infrared light transmission filter 104 is formed on the upper surface of the InGaAs layer 132.
  • the top surface of the second substrate 14 is bonded to the top surface of the first substrate 12 and laminated.
  • the InGaAs layer 132 is selectively removed to form the second photoelectric conversion region 124, and then the second pixel 102 is formed.
  • the subsequent steps are the same as those in FIG. 11 and subsequent steps.
  • the second pixels 102 may be formed before lamination, or the second pixels 102 may be formed after bonding the first substrate 12 and the second substrate 14.
  • an infrared light transmitting filter 104 is formed on the upper surface of the wiring layer 106 in the first substrate 12.
  • the second substrate 14 may have the second pixels 102 formed thereon as shown in FIG. 20, or may have an InGaAs layer 132 formed thereon as shown in FIG. 21.
  • the sensor section 10 can be formed through the manufacturing process starting from FIG. 10.
  • the sensor section 10 can be formed through the manufacturing process from FIG. 17 onwards.
  • the infrared light transmitting filter 104 can be formed on the first substrate 12 side, and then the first substrate 12 and the second substrate 14 can be bonded together.
  • an infrared light transmitting filter 104 on each of the upper surfaces of the first substrate 12 and the second substrate 14, and bond the infrared light transmitting filters 104 together.
  • the manufacturing process from FIG. 10 onwards can be carried out.
  • the manufacturing process from FIG. 17 onwards can be carried out.
  • the top surfaces of the first substrate 12 and the second substrate 14 can be activated with oxygen plasma to facilitate bonding.
  • the laminated infrared light transmission filter 104 is formed of different materials (for example, a-Si and SiO2 ), but the material of the upper surface of the first substrate 12 and the material of the second substrate 14 may be different materials (a-Si and SiO2 ) or the same material (for example, both are s-Si or both are SiO2 ).
  • the bonding method can be changed depending on whether the upper surfaces are made of different materials or the same material. This allows an appropriate method to be selected depending on the manufacturing process environment, etc.
  • the pixel transistor 116 and the like are formed on the upper surface of the first pixel 100. If necessary, an insulating film is formed at the interface between the pixel transistor 116 and the infrared light transmitting filter 104 and the interface with the first pixel 100, and then the infrared light transmitting filter 104 is formed.
  • regions for forming wiring connecting to the pixel transistors 116 etc. are selectively removed. Then, after forming the connecting wiring to the pixel transistors 116 etc., the wiring layer 106 is formed.
  • the upper surface of the first substrate 12 shown in FIG. 22 is bonded to the upper surface of the second substrate 14 shown in FIG. 20, FIG. 21, etc., and the sensor section 10 shown in FIG. 5, etc. can be formed through steps similar to those from FIG. 10 onwards (in addition to the step of forming a contact penetrating the infrared light transmission filter 104, there may be a step of forming this penetrating contact if necessary).
  • FIG. 6 where an insulating film 122 is formed at the interface with the first pixel 100 including the pixel transistor 116, and then the infrared light transmission filter 104 is formed. Subsequent processing is the same as above.
  • the infrared light transmission filter 104 can be formed on the first substrate 12 while the wiring layer is being formed. For example, after the first pixel 100 and pixel transistor 116 are formed, the material of the wiring layer 106 and the material of the infrared light transmission filter 104 are laminated to form the wiring 118. An insulating film 122 is appropriately formed between the infrared light transmission filter 104 and the wiring 118.
  • the top surface of the first substrate 12 shown in FIG. 23 is bonded to the top surface of the second substrate shown in FIG. 20, FIG. 21, etc., and a process similar to that from FIG. 10 onwards (other than the process of forming a contact penetrating the infrared light transmitting filter 104, there may be a process of forming this penetrating contact if necessary) is carried out to form the sensor section 10 shown in FIG. 7.
  • the infrared light transmitting filter 104 when the infrared light transmitting filter 104 is formed in the wiring layer 106, in addition to the above, the infrared light transmitting filter 104 may be formed in a layer separate from the wiring 118, as shown in FIG. 24. In this case, similar to the examples of FIGS. 12 to 14, contacts 120 to the wiring 118, etc. are formed so as to penetrate the infrared light transmitting filter 104.
  • InGaAs is molded to form the second photoelectric conversion region 124.
  • InP is formed by epitaxial growth on the top surface of the second photoelectric conversion region 124.
  • an insulating film e.g., a TEOS film
  • the second substrate 14 in FIG. 26 is formed through processes such as polishing and etching.
  • the subsequent processing is the same as that for placing the infrared light transmitting filter 104 in contact with the second substrate 14 described above, and the sensor section 10 is formed.
  • the second substrate 14 shown in FIG. 16 is formed by forming InP by epitaxial growth on the upper surface of the second substrate 14 in the state shown in FIG. 21.
  • the subsequent processes are the same as those from FIG. 16 onwards.
  • the infrared light transmitting filter 104 can be formed by epitaxial growth.
  • the manufacturing process shown in Figures 25 to 26 can be applied not only to InP but also to a laminated infrared light transmission filter 104 such as a laminated film of a-Si and SiO2.
  • a laminated film this can be realized by selectively forming a laminated film on the top surface of the InGaAs region of the second pixel 102 and forming an insulating film in other regions.
  • the infrared light transmission filter 104 using a laminated film can also be selectively formed on the top surface of the second photoelectric conversion region 124 of the second pixel 102.
  • the contact 128 is required as shown in FIG. 4. In either manufacturing process, a step is added to form the contact 128 that is insulated from the InGaAs and conducts with the infrared light transmission filter 104. In the case of FIG. 26 etc., wiring or the like for electrically connecting the infrared light transmission filter 104 and the contact 128 may be formed in advance.
  • InP can also be formed through a separate process.
  • the transfer substrate 16 can be a separate substrate on which an InP layer 134 is formed.
  • the transfer substrate 16 has the InP layer 134 formed thereon by any method.
  • a second substrate 14 similar to that shown in FIG. 9 can be formed by bonding the upper surface of a transfer substrate 16 shown in FIG. 27 to the upper surface of a second substrate 14 having an upper surface of an InGaAs layer 132 selectively present as shown in FIG. 20, and then removing the portions of the transfer substrate 16 other than the InP layer 134.
  • FIG. 28 is a top view showing a schematic diagram of one pixel area of the second pixel 102 of the sensor unit 10. Note that this diagram does not show all of the components, but shows a representative configuration in a see-through manner. For the relationship of the components in the depth direction, please refer to FIGS. 3 to 7, etc.
  • the dotted line indicates the first pixel 100 and the dashed line indicates the second pixel 102.
  • the first pixel 100 is formed by stacking with the second pixel 102 as shown in the figure.
  • a contact 120 including an electrode connected to the first pixel 100 and an insulating film 122 around the contact 120 are placed around the second pixel 102 so as not to come into contact with the second pixel 102. Signals and the like are output from the first pixel 100 via this contact 120, and control signals and the like are supplied to the first pixel 100.
  • the infrared light transmission filter between the visible light pixels and the infrared light pixels, it is possible to appropriately supply infrared light that has transmitted through the visible light pixels to the infrared light pixels.
  • a highly accurate visible light image can be generated by reflecting visible light to the visible light pixels.
  • Second embodiment Sensor part made of chalcogenide material>
  • the transmittance in the second pixel 102 that acquires shortwave infrared, as an example, it is desirable to set the transmittance at a wavelength of 700 [nm] to 5%, and to increase the transmittance at wavelengths of 1000 [nm] to 2500 [nm] as much as possible.
  • a chalcogenide material can be disposed.
  • TMDs Transition Metal Dichalcogenides
  • This TMD material can be arranged as an infrared light transmission filter 104, or a thin film of the TMD material can be applied to the infrared light transmission filter 104.
  • the infrared light transmission filter 104 in Figures 3 to 7 may be formed of a TMD film (chalcogenide layer).
  • the sensor portion 10 may use a layer including a TMD film as the infrared light transmission filter 104.
  • Molybdenum diselenide ( MoSe2 ) can be used as the TMD.
  • MoSe2 Molybdenum diselenide
  • the thickness of the TMD film exceeds 200 [nm]
  • the transmittance of light in the visible light band and the infrared light band described above can be almost achieved. Visible light is also absorbed by Si contained in other layers (for example, the layer in which the first pixel 100 or the second pixel 102 is formed, or the wiring layer 106).
  • the thickness of the TMD film is desirable to a range not exceeding 200 nm, for example, between 1 nm and 200 nm, in order to reduce the size of the sensor section 10.
  • the infrared light transmission filter 104 is formed from a TMD film, it is desirable to form the infrared light transmission filter 104 at 1 nm to 200 nm.
  • TMD materials In addition to MoSe2, other materials such as molybdenum disulfide (MoS2) and tungsten diselenide (Wse2) can be used as TMD materials.
  • MoS2 molybdenum disulfide
  • Wse2 tungsten diselenide
  • the transmission wavelengths of these materials are approximately 730 nm and 950 nm, respectively, so an appropriate TMD material can be selected depending on the infrared wavelength obtained.
  • MoS2 molybdenum disulfide
  • Wse2 tungsten diselenide
  • FIG. 29 is a diagram showing an example of a cross section of a sensor unit 10 according to one embodiment.
  • the sensor unit 10 may be configured to include an infrared light transmitting filter 104 on the upper surface of the second pixel 102, and a TMD film 136 on the upper surface of the infrared light transmitting filter 104.
  • the configuration of FIG. 29 may be configured to include a contact 128, as shown in FIG. 4.
  • FIG. 30 is a diagram showing an example of a cross section of a sensor unit 10 according to one embodiment.
  • the sensor unit 10 may be configured to include a TMD film 136 on the underside of the first pixel 100, and an infrared light transmitting filter 104 on the underside of the TMD film 136.
  • the insulating film 122 etc. are positioned appropriately depending on the situation.
  • Figure 31 is a diagram showing an example of a cross section of a sensor unit 10 according to one embodiment.
  • the sensor unit 10 can have a TMD film 136 and an infrared light transmitting filter 104 arranged on the underside of the TMD film 136 in the wiring layer 106.
  • the insulating film 122 and the like are arranged appropriately depending on the situation.
  • the TMD film 136 can achieve higher attenuation of light in the visible light band than the infrared light transmission filter 104 according to the first embodiment described above. For this reason, it is desirable that the TMD film 136 be disposed on the incident surface side of the infrared light transmission filter 104, i.e., on the first pixel 100 side, as shown in Figures 29 to 31, but this is not limited to these forms.
  • the thickness is 1 nm or more and 200 nm or less, but in consideration of the transmittance of light in the visible light band in combination with the infrared light transmission filter 104, the TMD film itself can be made thinner than when used alone.
  • the TMD film is basically formed with an arbitrary thickness on the top surface of the formed second pixel 102, as in FIG. 9. After this, the first substrate 12 and the second substrate 14 are bonded together to manufacture the sensor section 10, as in FIG. 10.
  • the first pixel 100 is formed on the first substrate 12, the second pixel 102 is formed on the second substrate 14, and these substrates are joined together to form a stacked pixel.
  • the first pixel 100 can also be formed on the same substrate after the second pixel 102 is formed.
  • a TMD film 136 is formed on the top surface of the second pixel 102.
  • wiring 138 for inputting and outputting signals to the second pixel 102 and supplying power to the second pixel 102 is formed so as to avoid the second photoelectric conversion region 124.
  • a trench for forming a contact and an insulating film are formed for the wiring 138.
  • the insulating film may be selectively formed on the side surface of the TMD film 136.
  • contact 142 is formed as an electrode that connects to wiring 138.
  • a wiring layer 106 is formed on the top surface of the layer formed in FIG. 34.
  • the first pixel 100 formed in the previous step may be bonded, or a step of forming the first pixel 100 on the top surface of this wiring layer 106 may be performed.
  • the first pixel 100 in order starting from the substrate of the second pixel 102.
  • this is not limited thereto, and an infrared light transmitting filter 104 and/or a TMD film 136 can also be formed between the stacked visible light pixel and infrared light pixel in a front-illuminated image sensor.
  • a transition metal dichalcogenide material with a high extinction coefficient for visible light between the stacked visible light pixels and infrared light pixels, it can be used in place of an infrared light transmission filter, or it can be configured separately from the infrared light transmission filter to thin the infrared light transmission filter.
  • a TMD material it is possible to reduce visible light in the thin layer, suppress attenuation of the amount of infrared light incident, and suppress oblique incidence of infrared light, etc.
  • the infrared light transmitting filter 104 between the first pixel 100 and the second pixel 102 has been described, but by providing an infrared light blocking film on the side surface of the second pixel 102, it is also possible to suppress the effects of color mixing between the second pixels 102.
  • the description and illustration of the infrared light transmitting filter 104 will be omitted, but this does not exclude a configuration that includes the infrared light transmitting filter 104 as in the above-described embodiment, and a configuration that further includes the infrared light transmitting filter 104 in addition to the configuration described below may also be used.
  • electrodes for applying voltages that define the potential of the body, cathode, anode, etc. of the pixel may be provided as appropriate even if they are not shown.
  • the focus is on the description of the light-shielding film (light-shielding shield) against infrared light in the photoelectric conversion region of the second pixel.
  • FIG. 36 is a diagram showing an example of a cross section of a sensor unit 10 according to one embodiment.
  • the first pixel 100 may be omitted, but the first pixel 100 is appropriately stacked with the second pixel 102 as in the previously described embodiment.
  • an insulating film 144 is formed on the side surface of the second photoelectric conversion region 124 and on the bottom surface in the drawing.
  • the insulating film 144 is an insulating film that prevents the charge acquired by photoelectric conversion in the second photoelectric conversion region 124 from flowing out due to contact with other conductors or semiconductors.
  • an infrared light shielding film 146 is provided inside the insulating film 144, more specifically, in the region corresponding to the side wall of the second photoelectric conversion region 124.
  • the infrared light shielding film 146 is formed, for example, from a material that shields infrared light or a material that reflects infrared light.
  • the infrared light shielding film 146 may be, for example, a metal.
  • the second photoelectric conversion region 124 is electrically connected to the contact 126 via the electrode 148.
  • the incident surface of the second photoelectric conversion region 124 is electrically connected to the contact 150 via a semiconductor film or a conductor film, for example, inside the insulating film 144 or at the interface with the wiring layer 106.
  • the sensor unit 10 at least includes a first pixel 100, a second pixel 102, a wiring layer 106, and an infrared light shielding film 146.
  • the first pixel 100 receives light in the visible light band and generates a pixel signal in the visible light band.
  • the second pixel 102 is formed by stacking with the first pixel 100, and receives light in the infrared light band that has passed through the first pixel 100 and generates a pixel signal in the infrared light band.
  • the wiring layer 106 is formed between the first pixel 100 and the second pixel 102, and includes wiring that propagates a signal output from the first pixel 100.
  • An infrared light shielding film 146 is disposed on at least one side surface of the second pixel 102.
  • This infrared light shielding film 146 may be formed on the side surface of the second photoelectric conversion region 124 of the second pixel 102 via an insulating film 144. This infrared light shielding film 146 may be formed, for example, from the same material as the electrode that applies a voltage to the second photoelectric conversion region 124.
  • an infrared light shielding film 146 that blocks infrared light can be disposed on the sidewall of the second photoelectric conversion region 124.
  • the infrared light shielding film 146 and the electrode 148 can be formed from the same material, and in this case, the infrared light shielding film 146 can be formed in the same manufacturing process as the electrode 148.
  • FIG. 37 shows a non-limiting example of the infrared light shielding film 146.
  • the infrared light shielding film 146 is disposed on the side surface of the second photoelectric conversion region 124 via the insulating film 144 in the same manner as described above.
  • the infrared light shielding film 146 is formed from the same material as the contacts 120, 126, 150, etc. Therefore, in the manufacturing process, it can be formed in the same process as the process of forming the electrodes of these contacts.
  • the infrared light shielding film 146 may be a metal such as Cu, Ti, Al, W, etc.
  • Figure 38 is a diagram showing an embodiment in which an infrared light shielding film 146 is disposed within the insulating film 144 on the same side as the incident surface of the second photoelectric conversion region 124.
  • the sensor unit 10 can be configured in such a way that the infrared light shielding film 146 shown in Figure 36 is also disposed on the incident surface side of the second photoelectric conversion region 124 in the region in which the second pixels 102 are disposed.
  • the infrared light shielding film 146 is made of a conductor or semiconductor
  • the infrared light shielding film 146 is disposed on the incident surface side in an area that is not electrically connected to the contacts 120 and 150.
  • the arrangement may be as shown in the drawings, or the infrared light shielding film 146 may be disposed on the incident surface side of the contacts 150 in an area that is not electrically connected to the contacts 150.
  • the infrared light blocking film 146 By forming the infrared light blocking film 146 in this manner, it becomes possible to block infrared light entering from the incident surface side of the second pixel 102 with even higher light blocking performance.
  • the potential of the infrared light shielding film 146 can be defined, for example, set to ground potential.
  • This contact 152 can be formed in the same process as contact 120, contact 126, and contact 150. That is, as shown in FIG. 36, the infrared light shielding film 146 may be in a floating state, or as shown in FIG. 38, the infrared light shielding film 146 may be set to any defined potential (including ground potential).
  • FIG. 39 shows an example in which the infrared light shielding film of FIG. 37 is extended to the incident surface side of the second pixel 102, as in FIG. 38.
  • an infrared light shielding film 146 made of the same material as the contacts may be disposed on the incident surface side between the second photoelectric conversion regions 124.
  • the infrared light shielding film 146 can be disposed in an area where it is not electrically connected to the contacts.
  • the infrared light shielding film 146 can be disposed on the incident surface side of the second pixel 102 in an area where it is not electrically connected to the contact 120, or in an area where it is not electrically connected to the contact 150.
  • Figure 40 is a diagram showing an example in which an infrared light shielding film 146 is disposed on the surface opposite the incident MEN of the second photoelectric conversion region 124 of the second pixel 102.
  • the infrared light shielding film 146 can be formed in the same manufacturing process as the electrode 148. As shown in this figure, a different form from Figure 36 etc. can be adopted depending on the convenience of processing in the manufacturing process.
  • FIG. 41 shows a configuration that combines the example of FIG. 38 and the example of FIG. 40. That is, in the example of FIG. 40, an infrared light shielding film 146 is also provided on the same surface side as the incident surface of the second photoelectric conversion region 124. In this case, a contact 152 can also be further arranged as in FIG. 38. This contact 152 can define the electric potential of the infrared light shielding film 146.
  • Figs. 36 to 41 as in the first embodiment, an example has been described in which, for example, one second pixel 102 is provided for every 2 x 2 first pixels 100, but the ratio of the numbers of first pixels 100 and second pixels 102 is not limited to this.
  • a configuration in which one second pixel 102 is provided for every first pixel 100 is also possible.
  • FIG. 42 shows, as an example, a sensor unit 10 in which one second pixel 102 is arranged for each first pixel 100.
  • the sensor unit 10 can have an infrared light shielding film 146 arranged between the second photoelectric conversion regions 124 of adjacent second pixels 102, more specifically, on the side between adjacent second pixels 102, via an insulating film 144.
  • the infrared light shielding film 146 in FIG. 42 can be formed so that the potential can be controlled, rather than floating, as shown in FIG. 38.
  • the infrared light blocking film 146 in FIG. 42 can also be disposed on the surface opposite the incident surface of the second photoelectric conversion region 124, as shown in FIG. 40.
  • the infrared light shielding film 146 in FIG. 42 can be connected to a contact so that the potential can be controlled, as shown in FIG. 40, and can also be disposed on the surface opposite the incident surface of the second photoelectric conversion region 124.
  • FIG. 43 shows an example in which the infrared light shielding film 146 between adjacent second pixels 102 shown in FIG. 42 is formed from the same material as the contact electrodes, similar to FIG. 37 etc.
  • the infrared light shielding film 146 made of the same material as the contacts may be disposed only between adjacent second pixels 102, and further, the infrared light shielding film 146 on the side walls of a group of adjacent second pixels 102 may be formed from the same material as the contacts.
  • a transparent electrode film is formed on the incident surface side of the second photoelectric conversion region 124, and this transparent electrode film is electrically connected to the contact 150.
  • the potential of the transparent electrode film and the potential of the electrode 148 are controlled by the voltage applied to this contact 150 and the voltage applied to the contact 126, so that the infrared light incident on the second photoelectric conversion region 124 is appropriately converted into an electric charge to generate a signal.
  • An example of the position at which this contact 150 is formed will be described below.
  • FIG. 44 is a partially see-through view from above of a sensor unit 10 according to one embodiment.
  • the sensor unit 10 includes, for example, a second pixel 102 and a transparent electrode 154 that sets an appropriate electric potential on the incident surface side of the second photoelectric conversion region 124 of the second pixel 102, as shown in the figure.
  • the transparent electrode 154 is an electrode having a low resistance value and a transmission spectrum for at least infrared light.
  • the transparent electrode 154 may be, but is not limited to, an indium tin oxide (ITO), indium zinc oxide (IZO), SnO2 , gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO), or other low-resistance transparent conductive film.
  • wiring electrically connecting the contacts 150 and the transparent electrodes 154 is not shown in Figure 44 and Figure 45 described below. This is because these are diagrams for explaining the positional relationship between the contacts 150 and the transparent electrodes 154, and the contacts 150 and the transparent electrodes 154 are electrically connected by wiring, metal films, or semiconductor films arranged in appropriate positions. Also, the arrangement of the second pixels 102 is shown for the purpose of making the arrangement of the contacts 150 etc. easier to understand, and for example, the second pixels 102 may be arranged with an equal pitch from each other.
  • a transparent electrode 154 is formed on the incident surface side of the second photoelectric conversion region 124 of the second pixel 102. This transparent electrode 154 is controlled by a voltage applied via the contact 150.
  • the contact 150 for applying a voltage to the transparent electrode 154 can be located away from the second pixel 102. It can also be located away from the first pixel 100.
  • An insulating film 144 may be formed at least partially around the contact 150 to properly block electrical connection.
  • the positional relationship between the contact 150 and the first and second pixels 100 and 102 is not limited to that shown in FIG. 44, and may be any distance apart within a range that allows appropriate potential control.
  • FIG. 45 is a diagram showing another example of the arrangement of the contacts 150.
  • the contacts 150 may be arranged so as to overlap with a portion of the second pixels 102.
  • the contacts 150 may be arranged in the center of 2 ⁇ 2 second pixels 102.
  • the infrared light shielding film 146 according to this embodiment can be manufactured at various times.
  • the manufacturing process of the infrared light shielding film 146 in the drawings described above will be explained using several examples.
  • the infrared light shielding film 146 can be formed following the process of forming the insulating film 144 at the same time as forming the second photoelectric conversion region 124.
  • the infrared light shielding film 146 may be formed at the same time as forming the second photoelectric conversion region 124. In this case, by laminating it with the first pixel 100 formed on the first substrate 12, a sensor unit 10 is manufactured in which infrared light reaches the second pixel 102 via the first pixel 100.
  • the infrared light shielding film 146 can be formed after the first substrate 12 and the second substrate 14 are laminated.
  • the first pixel 100 can be formed on its surface side.
  • the infrared light blocking film 146 can be formed at the same time as forming the second photoelectric conversion region 124 of the second pixel 102 or at the same time as creating a contact for the second photoelectric conversion region 124 of the second pixel 102.
  • a solid-state imaging device includes a first pixel that receives light in the visible light band and generates a pixel signal in the visible light band, and a second pixel that is formed by stacking with the first pixel and receives light in the infrared light band that has passed through the first pixel and generates a pixel signal in the infrared light band.
  • This solid-state imaging device can be manufactured by a method that includes manufacturing steps of forming a photoelectric conversion region of the second pixel, forming a sidewall of the photoelectric conversion region, and forming an infrared light-shielding film on the side surface of the sidewall of the photoelectric conversion region.
  • the infrared light shielding film 146 can be formed in a process at any appropriate time.
  • the wiring layer between the first photoelectric conversion region of the first pixel and the second photoelectric conversion region of the second pixel is filled with a material that transmits at least infrared light, and that there are no or few other obstructions. For this reason, wiring that transmits and receives current, voltage, etc. to and from the first pixel is formed in an area of the wiring layer that is not on the top surface of the second photoelectric conversion region.
  • the density difference of the metal wiring during the manufacturing process causes the insulating film to be filled to be formed in a concave shape above the second photoelectric conversion region, which creates the problem that it is difficult to flatten the top surface during the manufacturing process.
  • the solid-state imaging device solves this problem by preventing a decrease in the amount of infrared light incident on the second photoelectric conversion region.
  • Figure 46 is a schematic diagram showing a cross section of a sensor unit 10 according to one embodiment.
  • the wiring layer 106 is provided with wiring 118 as in each of the previously described embodiments, and also has holes 156.
  • the wiring 118 is not positioned on the upper part of the incident surface side of the second photoelectric conversion region 124, but is positioned so as to avoid the upper part of the second photoelectric conversion region 124.
  • the voids 156 are disposed in the wiring layer 106 above the second photoelectric conversion region 124.
  • the voids 156 may be filled with air, for example.
  • the voids 156 are shown as rectangles, they are not limited to this and may be connected top to bottom, left to right, like wiring.
  • this void 156 is formed by forming a dummy wiring in the same process as the wiring 118, and then removing this dummy wiring in a subsequent process, so as not to block infrared light.
  • the solid-state imaging device 1 includes, for example, a first pixel 100 having a first photoelectric conversion region 112 that receives light in the visible light band and generates a pixel signal in the visible light band, a second pixel 102 formed by stacking with the first pixel 100 and having a second photoelectric conversion region 124 that receives light in the infrared light band that has passed through the first photoelectric conversion region 112 and generates a pixel signal in the infrared light band, and a wiring layer 106 formed between the first pixel 100 and the second pixel 102 and on which wiring 118 is disposed for transmitting a signal output from the first pixel 100.
  • This wiring layer 106 includes the above-mentioned wiring 118 in a region other than between the first photoelectric conversion region 112 and the second photoelectric conversion region 124 for the stacked first pixel and second pixel.
  • the wiring 118 may be, for example, a metal, and more specifically, may be at least one of Cu, W, Ti, or Al, or an alloy containing at least one of them. As another example, the wiring 118 may include a semiconductor film such as polysilicon.
  • the wiring layer 106 may not include wiring 118 between the first photoelectric conversion region 112 and the second photoelectric conversion region 124 for the stacked first pixel 100 and second pixel 102, and holes 156 that transmit light in the infrared light band that has passed through the first pixel 100 may be formed between the first photoelectric conversion region 112 and the second photoelectric conversion region 124.
  • the cross section of the hole 156 does not have to be rectangular, and the filling material does not have to be air. Some non-limiting examples are given below. In the following, only the inside of the wiring layer 106 may be illustrated, but this wiring layer 106 is formed between the first pixel 100 and the second pixel 102, as in Figure 46 etc.
  • Figure 47 shows another example of a void 156.
  • the void 156 may include an anti-reflective coating 158.
  • the anti-reflective coating 158 may be located below the air-filled area of the void 156 as shown.
  • the anti-reflective coating 158 may be the barrier metal of the wiring 118 or may be formed of other conductors or semiconductors.
  • FIG. 48 is a diagram showing another example of the void 156.
  • the void 156 is filled with air, but the present invention is not limited to this.
  • An insulating film 160 may be formed in the void 156.
  • the insulating film 160 is formed of an insulating material different from the insulating material forming the wiring layer 106, for example, SiN (silicon nitride) and SiO 2.
  • the insulating film 160 may be formed of a SiCN (silicon carbonitride) film, as a non-limiting example.
  • an insulating film 160 is shown in FIG. 48, it may be a semiconductor film that has high transmittance for infrared light.
  • the voids 156 may be filled with a semiconductor film such as polysilicon instead of the insulating film 160.
  • Figure 49 shows another example of voids 156.
  • voids 156 may be formed so as to totally reflect infrared light, particularly short-wave infrared light, in relation to the insulating film forming wiring layer 106. Total reflection of infrared light between voids 156 and the insulating film forming wiring layer 106 allows infrared light that has passed through first photoelectric conversion region 112 to be more efficiently incident on second photoelectric conversion region 124.
  • this configuration makes it possible to prevent infrared light from entering other second pixels 102.
  • the inside of the void 156 may be filled with an insulator or a semiconductor.
  • the insulator or semiconductor may be made of a material that performs total reflection at the boundary with the insulator forming the wiring layer 106, taking into consideration the angle of incidence at which the infrared light that passes through the first photoelectric conversion region 112 and enters the second photoelectric conversion region 124 reaches the side of the void 156.
  • Figure 50 is a diagram showing another example of the wiring layer 106.
  • the wiring layer 106 is formed from the same insulating material, but this is not limited to this.
  • the wiring layer 106 may be formed with two types of insulating films 162, 164.
  • the insulating film 162 forms the lower part of the wiring layer 106, and the insulating film 164 forms the upper part of the wiring layer 106.
  • planarization can be appropriately achieved during the manufacturing process, similar to the void 156 described above.
  • FIGS. 51 to 53 show non-limiting examples of cross-sectional shapes of the air hole 156.
  • the air hole 156 may be a rectangle with rounded corners.
  • the air hole 156 may be a rectangle with a circular short side.
  • the air hole 156 may be a rectangle with a taper.
  • This shape can be determined based on the convenience of the manufacturing process, the strength of the material, etc.
  • Figures 54, 55, and 56 respectively show the A-A cross-sectional view, the B-B cross-sectional view, and the C-C cross-sectional view in Figure 46. Please note that these figures do not show the aspect ratio or exact positions, and the positional relationship with Figure 46 is not exactly the same.
  • color filters 166 corresponding to R, G, and B are arranged. By receiving incident light through these color filters and acquiring it in the first photoelectric conversion region 112, the first pixel 100 is able to acquire information for each color in the visible light band.
  • the cross section B-B shown in Figure 55 shows the holes 156, contacts 120, and wiring 118 provided in the wiring layer 106.
  • the dotted lines are projections of the boundaries of the color filters 166 shown in Figure 55.
  • the dashed lines are perspective views of the boundaries of the second photoelectric conversion regions 124.
  • the wiring 118 and contacts 120 are arranged so as not to overlap the second photoelectric conversion region 124, and the voids 156 are arranged so as to overlap the second photoelectric conversion region 124.
  • This arrangement of the wiring 118 and contacts 120 allows for wiring that does not block infrared light entering the second photoelectric conversion region 124.
  • the second photoelectric conversion region 124 is disposed.
  • the dotted lines indicate the boundaries of the color filters 166, as described above. Note that this figure does not show the structure surrounding the second photoelectric conversion region 124, such as an insulating film.
  • the second photoelectric conversion region 124 is formed at a position away from the contact 120. Compared to FIG. 55, infrared light that has passed through the voids 156 is appropriately incident on the second photoelectric conversion region 124.
  • the wiring layer 106 can be formed from either the first pixel 100 side or the second pixel 102 side.
  • the formation of this wiring layer 106 is realized at an appropriate timing depending on the manufacturing process, etc. In this chapter, only the formation of the wiring 118, etc. in the wiring layer 106 is described, and other components other than the wiring 118, etc., such as the pixel transistor 116, contact 120, etc. are not illustrated.
  • the omitted components are formed at an appropriate timing as in the above-mentioned embodiment.
  • an area for forming the wiring 118 and the voids 156 is formed. This area can be formed, for example, by selectively removing the top surface of the insulating film 162.
  • wiring 118 and dummy wiring 168 are formed in the selectively removed areas. This formation can be achieved in the same process. That is, wiring 118 and dummy wiring 168 may be formed from the same material. If necessary, a process of forming a barrier metal in the removed areas can be inserted as a process prior to forming the metal or other material that will be used for these wiring.
  • the upper surfaces of the wiring 118, the dummy wiring 168, and the insulating film 162 are polished or etched to be flattened, and then the insulating film 162 is further formed.
  • the insulating film 162 is selectively removed.
  • wiring 118 and dummy wiring 168 are formed as shown in FIG. 62.
  • the upper surfaces of the wiring 118 and the dummy wiring 168 are planarized, and then an insulating film 162 is formed on the planarized upper surfaces.
  • a mask 170 is formed to prevent the wiring 118 from being removed.
  • a trench is formed in the insulating film 162 up to the dummy wiring 168.
  • a trench reaching the dummy wiring 168 is formed by dry etching the insulating film 162.
  • the metal forming the dummy wirings 168 is removed, for example, by wet etching.
  • the dummy wirings 168 in the cross-sectional view may be formed, for example, by being connected to each other, and all of the connected dummy wirings 168 are removed in this process.
  • the mask 170 and trench formation of Figures 64-65 can be performed on multiple dummy wirings 168 to remove the dummy wirings 168 from multiple locations by wet etching.
  • the trench is filled with an insulating film 162 and the top surface is planarized to form the wiring layer 106.
  • the subsequent steps can be achieved in the same manner as in the previously described embodiment. If necessary, it is also possible to form the wiring layer on both the first pixel 100 side and the second pixel 102 side, and then join the wiring layers formed on both sides to form the wiring layer 106.
  • a step of removing the dummy wiring 168 may be performed.
  • a step of removing the dummy wiring 168 may be performed for each stage.
  • a mask 170 is selectively formed on the upper surface of the wiring 118 as shown in Figure 68, and the dummy wiring 168 is removed.
  • an insulating film 164 for example a tetraethyl orthosilicate (TEOS) film, is formed on the upper surface as shown in Figure 69, and the upper surface is flattened to form the wiring layer 106 in the example of Figure 50.
  • TEOS tetraethyl orthosilicate
  • the wiring layer 106 according to this embodiment can remove the shielding structure for the infrared light sensor, making it possible to capture infrared light more efficiently. Furthermore, the manufacturing process according to this embodiment can suppress distortion caused by forming voids and properly flatten the upper surface.
  • a transparent electrode is provided on the incident surface side of the second pixel 102.
  • this transparent electrode in the second pixel 102 will be described in detail.
  • the transparency of the transparent electrode in the second pixel 102 means that it is transparent to infrared light, that is, it is sufficient that it transmits light in a desired band in the infrared band, and it does not necessarily have to be transparent to light in the visible light band.
  • a configuration is described in which a first electrode is provided on the incident surface side of the second photoelectric conversion region 124, and a second electrode is provided on the opposite side to the incident surface.
  • the first electrode of the second photoelectric conversion region 124 may be another electrode (semiconductor film, metal electrode) instead of a transparent electrode, and this case will also be described as a modified example.
  • FIG. 70 is a diagram showing a schematic example of the configuration of a sensor unit 10 according to one embodiment, in particular the second pixel 102.
  • the second pixel 102 converts incident light into an electrical signal in the second photoelectric conversion region 124 and outputs the electrical signal.
  • the second pixel 102 also includes a transparent electrode 172 (first electrode) and a transparent insulating film 174.
  • the transparent electrode 172 is an electrode that transmits at least light in the infrared band, and is provided on the light incident surface side of the second photoelectric conversion region 124. This transparent electrode 172 is equivalent to the transparent electrode 154 in the above-mentioned embodiment.
  • the transparent electrode 172 can be formed of, for example, ITO, IZO, SnO2 , GZO, AZO, or other low-resistance transparent conductive film having high transmittance properties for infrared light.
  • This transparent electrode 172 is electrically connected to the contact 150, and the potential can be controlled via the contact 150. By controlling the potential of the transparent electrode 172, the charge generated by incident light in the second photoelectric conversion region 124 can be transmitted with higher efficiency to the electrode 148 via the diffusion layer formed around the electrode 148 (second electrode) of the second photoelectric conversion region 124.
  • the transparent insulating film 174 is formed, for example, as an interlayer insulating film between the second pixel 102 and the wiring layer 106.
  • the transparent insulating film 174 is formed, for example, of a material such as TEOS.
  • the transparent insulating film 174 may be a dielectric film of a silicon compound including at least one of SiO2, SiON (silicon oxynitride), SiN, SiOC (carbon- containing silicon oxide), SiCN, PSG (phosphorous silicate glass), BPSG (boro phosphorus silicate glass), and FSG (fluorine-doped silicate glass), or may be a resin such as a polyimide such as Al2O3 or Sc2O3.
  • This configuration allows infrared light to be incident on the second photoelectric conversion region 124 via the transparent insulating film 174 and the transparent electrode 172, and also allows the charge generated in the photoelectric conversion to be properly propagated to the electrode 148.
  • FIG. 71 shows a modified example in which there is no transparent electrode 172.
  • a diffusion layer formed on the incident surface side of the second photoelectric conversion region 124 can be used as an electrode.
  • the first diffusion layer 176 is a diffusion layer made of a semiconductor formed on the incident surface side of the second photoelectric conversion region 124.
  • the first diffusion layer 176 may be a thin film made of n-type InP, for example, undoped InP.
  • the second diffusion layer 178 is, for example, an n+ type diffusion layer formed using the same material as the second photoelectric conversion region 124.
  • the second diffusion layer 178 may be, for example, a diffusion layer formed via a thin film such as an insulating film (SiN, aluminum oxide (Al 2 O 3 )) formed on the side and bottom surfaces of the second photoelectric conversion region 124 and extended along the incident surface.
  • the contact 150 is electrically connected to the second diffusion layer 178, and the potential of the first diffusion layer 176 can be controlled via the second diffusion layer 178. By applying a voltage through this first diffusion layer 176, the same effect as in FIG. 70 can be achieved.
  • Figure 72 shows another example of a case where a transparent electrode 172 is provided.
  • a transparent electrode 172 is provided.
  • the configuration shown in Figure 72 can be used.
  • the electrode 180 connects the transparent electrode 172 and the contact 150 on the wiring layer 106 side.
  • the electrode 180 may be an alloy containing at least one of the following elements, but is not limited to: gold (Au), nickel (Ni), palladium (Pd), W, Al, Cu, and Ti.
  • the contact 150 is electrically connected to the electrode 180, and a voltage is applied to the transparent electrode 172 via the electrode 180.
  • the electrode 180 selectively penetrates a portion of the transparent insulating film 174 to electrically connect to the transparent electrode 172. This electrical connection allows the potential of the transparent electrode 172 to be controlled via the contact 150. As a result, the same effect as described above can be achieved.
  • FIG. 73 is a diagram showing the relationship between a first pixel 100 and a second pixel 102. As with the drawings relating to the above-mentioned embodiments, this diagram omits illustrations other than characteristic parts, but it should be noted that the diagram includes the necessary configuration as appropriate.
  • the second pixel 102 may be stacked with the first pixel 100 and have an element isolation film, or as shown in FIG. 73, the second pixel 102 may not have an element isolation film and the second photoelectric conversion region 124 may be shared among a plurality of second pixels 102.
  • the diffusion region 182 within the second photoelectric conversion region 124 that shares the diffusion region 182, the range of pixels that acquire the signal of the second pixel 102 and the electrical connection to the contact 126 that transmits the acquired signal can be made clearer.
  • FIG. 74 is a diagram showing another example in which the second photoelectric conversion region 124 is shared. As shown in this diagram, the range of the second pixel 102 is not limited to being stacked in all first pixels 100. For example, some first pixels 100 may not have a corresponding second pixel 102.
  • This type of configuration is not only applicable to cases where the second photoelectric conversion region 124 is shared, but also to cases where the second pixels 102 each have an element-isolated second photoelectric conversion region 124. In other words, even in the case shown in Figure 3 etc., a first pixel 100 that is not stacked with the second pixel 102 may be provided.
  • the contact 120 electrically connected to the first pixel 100 and the contact 150 for applying a voltage to the first electrode (e.g., transparent electrode 172) on the incident surface side of the second pixel 102 may be formed within the element isolation film.
  • the manufacturing process of the second pixel 102 will be described. Note that the materials are shown as examples and are not limited to the following description. Also, in this chapter, we focus on the manufacturing process of the second pixel 102, and the manufacturing processes of the first pixel 100 and the wiring layer 106 are omitted, but they can be formed in the same manner as in each of the above-mentioned embodiments.
  • a material such as InGaAs that will form the second photoelectric conversion region 124 is formed on an InP substrate.
  • an insulating layer or a semiconductor layer is formed as a layer on the upper or lower surface of the InGaAs.
  • the InGaAs can be formed, for example, by epitaxial growth.
  • An InP layer is formed on the upper surface of the formed InGaAs.
  • an ITO layer that will ultimately become the transparent electrode 172 (first electrode) and a TEOS layer that will become the transparent insulating film are formed on the top surface of the InP layer.
  • the formation of the ITO layer is omitted.
  • the substrate is turned upside down and as much of the InP substrate as necessary is removed by etching or the like to prepare for forming the connection contacts in the wiring layer 106 to the first pixel 100 and the connection contacts to the transparent electrode of the second pixel 102.
  • etching or the like First, as much of the substrate as necessary is removed by wet etching or the like.
  • a mask 170 is formed to allow the trenches to be in the appropriate positions.
  • a SiN film may be formed as an interlayer insulating film in contact with the TEOS film. This SiN film may be formed on the substrate on the side on which the inverted second photoelectric conversion region 124 is to be laminated, or the SiN film may be formed on the front side of the TEOS film, and then inverted and laminated on the substrate.
  • the first pixel 100 and the wiring layer 106 may already be formed on this substrate.
  • a SiN film may be formed on the top surface of the wiring layer 106, and a TEOS film may be laminated on top of the SiN film.
  • a trench is formed so that the ITO layer is exposed on the top surface.
  • the trench is formed, for example, by anisotropic dry etching.
  • the ITO layer is selectively removed.
  • a mask is formed and then anisotropic etching is performed.
  • a protective film 184 is formed, and if necessary, a second diffusion layer 178 is formed.
  • the second diffusion layer 178 can be formed, for example, by applying heat to activate the sidewalls.
  • a Zn diffusion mask is formed to selectively remove the top surface, and Zn is diffused to form diffusion region 182.
  • electrode 148 which will become the second electrode, is formed.
  • an interlayer insulating film 186 is formed and the upper surface is planarized.
  • another protective film may be formed if necessary.
  • the necessary contacts are formed to form the second pixel 102 and the area of the second pixel 102.
  • the contact 120 protrudes downward, and is formed so as to connect to the wiring 118 of the wiring layer 106 that is already formed below the TEOS film.
  • a TEOS film is formed on the top surface of the InP film.
  • the semiconductor layer shown in Figure 86 is formed through the same process as above, except for the selective removal of the ITO film. Note that when inverting, a TEOS film may be laminated on the support substrate as shown in the figure.
  • each contact is formed as shown in Figure 87.
  • the depth of each contact is appropriately determined depending on the position of the electrode to which each contact is connected.
  • an ITO electrode that forms the transparent electrode 172, which will be the first electrode, and a protective film 184 are formed.
  • electrode 180 is formed as a third electrode that electrically connects contact 150 and transparent electrode 172 (ITO electrode). Electrode 180 can be created by forming a trench of an appropriate depth on the upper side of contact 150 and on a portion of the upper side of the ITO electrode, and selectively forming a metal film.
  • the second pixel 102 of this embodiment can be formed by forming an appropriate interlayer insulating film and extending and connecting the contact 120.
  • the relationship between the second pixel 102 and the wiring 118 has been mainly described, but in this embodiment, a non-limiting example of the positional relationship between the first pixel 100 in the sensor section 10 and the wiring 118 of the wiring layer 106 will be described.
  • FIG. 91 is a cross-sectional view showing a schematic example of a sensor section 10 of a solid-state imaging device 1 according to an embodiment.
  • the wiring 118 may be provided below the light-shielding film 114, which is an element isolation section of the first pixel 100.
  • infrared light that passes through the first photoelectric conversion region 112 is reflected by the wiring 118 and can be incident on the appropriate second photoelectric conversion region 124.
  • the wirings 118 are appropriately connected to each other under the light-shielding film 114, which is an element isolation section of the first pixels 100, and are connected to the contacts 120 at the pixel ends.
  • the wirings 118 are arranged along lines and columns, and are electrically connected to the contacts 120 arranged at the pixel ends at the ends of the lines and columns, making it possible to appropriately output signals from the first pixels 100.
  • a contact 120 may be provided in each of the element isolation sections of the second pixels 102 or at an appropriate location.
  • the second photoelectric conversion region 124 is isolated for each second pixel 102 by an element isolation section, but as described in some of the embodiments above, the second photoelectric conversion region 124 may be shared by multiple second pixels 102.
  • the light-shielding film 114 which is the element isolation section, is an insulator formed, for example, by RDTI (Rear Deep Trench Isolation).
  • the sensor unit 10 includes a first pixel 100 having a first photoelectric conversion region that receives light in the visible light band and generates a pixel signal in the visible light band, a second pixel 102 formed by stacking with the first pixel 100 and having a second photoelectric conversion region 124 that receives light in the infrared light band that has passed through the first pixel 100 and generates a pixel signal in the infrared light band, and a wiring layer formed between the first pixel 100 and the second pixel 102 and including wiring 118 that transmits a signal output from the first pixel 100.
  • the wiring layer 106 is arranged such that the wiring 118 is disposed below the element isolation portion (light-shielding film 114) of the first pixel 100 for the stacked first pixel 100 and second pixel 102.
  • Fig. 92 is a diagram showing another example of this embodiment.
  • the light-shielding film 114 which is an element isolation portion, may have a metal film 188 therein.
  • the metal film 188 is electrically insulated from the surroundings by an insulating film at least on the side of the first photoelectric conversion region 112 and the wiring layer 106.
  • the metal film 188 may be in a floating state.
  • the metal film 188 may be appropriately connected to a contact at any location, for example, at the pixel end of the first pixel 100, and controlled to any potential, such as ground potential.
  • FIG. 93 is a diagram showing another example of this embodiment. As shown in FIG. 93, when one second pixel 102 is provided for two first pixels 100 in the cross section, it is also possible to adopt a configuration in which no wiring 118 is arranged below the element isolation portion of the first pixel 100 located above the second photoelectric conversion region 124.
  • FIG. 94 is a diagram showing another example of this embodiment. As shown in this figure, when two first pixels 100 are stacked on top of one second pixel 102 in the cross section, the pixel transistors 116 may be arranged around the element isolation parts of the two first pixels 100.
  • Figure 95 is a partial top perspective view of the configuration of Figure 94.
  • the dotted lines indicate wiring 118 and the brackets indicate that a pixel separator is located in that region of the first pixel 100.
  • the pixel transistors 116 can be positioned close to the center of these first pixels 100. This arrangement also makes it easy to share the floating diffusion regions in the first pixels 100.
  • the sensor unit 10 according to this embodiment and the modified example can be manufactured by forming a light-shielding film 114 as an RDTI using a DTI or the like in the manufacturing process of the above-described embodiment, and by appropriately controlling the arrangement of the wiring 118, the contacts 120, etc.
  • the infrared light transmitting filter is formed between a bonding surface of the wiring layer and the second pixel, The solid-state imaging device according to (A1).
  • (A3) The infrared light transmitting filter is formed in the wiring layer, The solid-state imaging device according to (A1).
  • the infrared light transmitting filter is formed between a bonding surface of the first pixel and the wiring layer;
  • the infrared light transmitting filter is It is formed of a material having a characteristic of absorbing or reflecting light in the visible light band depending on the wavelength, or a combination of materials having a characteristic of reflecting light.
  • a solid-state imaging device according to any one of (A1) to (A4).
  • the infrared light transmitting filter is It is formed by laminating amorphous silicon and silicon dioxide one or more times alternately.
  • the infrared light transmitting filter is Formed of a material having the property of absorbing light in the visible light band, A solid-state imaging device according to any one of (A1) to (A4).
  • the infrared light transmitting filter is formed of indium phosphide, The solid-state imaging device according to (A7).
  • the infrared light transmitting filter is formed of a transition metal dichalcogenide material, A solid-state imaging device according to any one of (A1) to (A4).
  • the infrared light transmitting filter is A thickness of 1 nm or more and 200 nm or less.
  • a chalcogenide layer formed of a transition metal dichalcogenide material is provided on the light incident surface side of the infrared light transmission filter.
  • a solid-state imaging device according to any one of (A1) to (A8).
  • the chalcogenide layer is A thickness of 1 nm or more and 200 nm or less.
  • the transition metal dichalcogenide material is Molybdenum diselenide, The solid-state imaging device according to (A9) or (A11).
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • (B1) On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; a top surface of the wiring layer and a top surface of the infrared light transmission filter are joined together to laminate the first substrate and the second substrate; A method for manufacturing a solid-state imaging device.
  • (B2) On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the wiring layer; On the second board, forming a second pixel that receives infrared light; a top surface of the infrared light transmission filter and a top surface of the second pixel are bonded to stack the first substrate and the second substrate.
  • a method for manufacturing a solid-state imaging device On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the wiring layer; On the second board, forming a second pixel that receives infrared light; a top surface
  • (B3) On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; forming a first infrared light transmitting filter that transmits infrared light on an upper surface of the wiring layer; On the second board, forming a second pixel that receives infrared light; forming a second infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel; an upper surface of the first infrared light transmission filter and an upper surface of the second infrared light transmission filter are joined to stack the first substrate and the second substrate; A method for manufacturing a solid-state imaging device.
  • (B4) On the first board, forming a first pixel for receiving visible light; forming a first wiring layer including wiring for transmitting a signal of the first pixel on an upper surface of the first pixel; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the first wiring layer; forming a second wiring layer on an upper surface of the infrared light transmission filter, the second wiring layer being connected to the wiring of the first wiring layer; On the second board, forming a second pixel that receives infrared light; a top surface of the second wiring layer and a top surface of the second pixel are joined to stack the first substrate and the second substrate; A method for manufacturing a solid-state imaging device.
  • (B5) On the first board, forming a first pixel for receiving visible light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the first pixel; forming a wiring layer including wiring for transmitting a signal of the first pixel on an upper surface of the infrared light transmission filter; On the second board, forming a second pixel that receives infrared light; a top surface of the wiring layer and a top surface of the second pixel are joined to stack the first substrate and the second substrate; A method for manufacturing a solid-state imaging device.
  • the infrared light transmitting filter is It is formed by laminating amorphous silicon and silicon dioxide one or more times. The method according to any one of (B1) to (B5).
  • (B7) On the first board, forming a first pixel for receiving visible light; forming a wiring layer on an upper surface of the first pixel, the wiring layer including wiring for transmitting a signal of the first pixel; On the second board, forming a second pixel that receives infrared light; forming an infrared light transmitting filter that transmits infrared light on an upper surface of the second pixel by epitaxial growth; an upper surface of the wiring layer and an upper surface of the infrared light transmission filter are joined to stack the first substrate and the second substrate; A method for manufacturing a solid-state imaging device.
  • the second pixel is Before laminating the first substrate and the second substrate, a shape of a light receiving region is formed.
  • the second pixel is After the first substrate and the second substrate are laminated, the shape of the light receiving region is formed.
  • the infrared light transmitting filter is formed from a transition metal chalcogenide material; The manufacturing method described in B11.
  • the infrared light transmitting filter is It is formed with a thickness of 1 nm to 200 nm.
  • the infrared light transmitting filter is It is formed by laminating amorphous silicon and silicon dioxide one or more times. The method for producing the same according to (B14).
  • the chalcogenide layer comprises: It is formed with a thickness of 1 nm to 200 nm.
  • a solid-state imaging device according to any one of (B14) to (B16).
  • the chalcogenide layer comprises: Formed by a thin film of molybdenum diselenide, The solid-state imaging device according to (B12) or (B17).
  • the device according to the embodiment of the present disclosure may be configured as follows:
  • (C1) A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band; a wiring layer formed between the first pixel and the second pixel and including wiring for transmitting a signal output from the first pixel; An infrared light blocking film is provided on at least one side surface of the second pixel.
  • the infrared light-shielding film is a second pixel formed on a side surface of the photoelectric conversion region of the second pixel via an insulating film;
  • (C1) A solid-state imaging device.
  • the infrared light-shielding film is It is formed of the same material as the contact electrode.
  • the solid-state imaging device according to (C2) is the same material as the contact electrode.
  • the infrared light-shielding film is Between the adjacent second pixels, the second pixel is formed on the same surface side as the incident surface of the second pixel.
  • the infrared light-shielding film is The light-transmitting layer is formed on a surface of the photoelectric conversion region of the second pixel opposite to the incident surface of the second pixel.
  • a solid-state imaging device according to any one of (C2) to (C4).
  • the second pixel is At least two are formed adjacent to each other, The infrared light shielding film is provided on an adjacent side surface.
  • a solid-state imaging device according to any one of (C1) to (C5).
  • the second pixel is A voltage on the incident surface side is input from a transparent electrode connected to the photoelectric conversion film region of the second pixel, The transparent electrode is The second pixel is electrically connected to a contact electrode at a position away from the second pixel.
  • a solid-state imaging device according to any one of (C1) to (C6).
  • the second pixel is A voltage on the incident surface side is input from a transparent electrode connected to the photoelectric conversion film region of the second pixel,
  • the transparent electrode is the contact electrodes are electrically connected to the adjacent second pixels at positions where the contact electrodes are in contact with the adjacent second pixels via the infrared light shielding film;
  • a solid-state imaging device according to any one of (C1) to (C6).
  • the contact electrode is Formed from a material having light blocking properties, The solid-state imaging device according to (C4).
  • the contact electrode is copper, titanium, aluminum or tungsten;
  • the contact electrode is The second pixel is shared by multiple pixels.
  • the solid-state imaging device according to any one of (C4), (C9) and (C10).
  • At least one of the infrared light shielding films formed of the same material as the contact electrodes is Electrically floating The solid-state imaging device according to (C4) or any one of (C9) to (C11) dependent on (C4).
  • At least one of the infrared light shielding films formed of the same material as the contact electrodes is Grounded, The solid-state imaging device according to (C4) or any one of (C9) to (C11) dependent on (C4).
  • (C14) At least one of an infrared light transmission filter or a chalcogenide layer according to any one of (A1) to (A13), Further comprising: A solid-state imaging device according to any one of (C1) to (C13).
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • (D1) A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: After forming the photoelectric conversion region of the second pixel, forming a sidewall of the photoelectric conversion region; forming an infrared light shielding film on a side surface of a side wall of the photoelectric conversion region; A method for manufacturing a solid-state imaging device.
  • (D2) After forming the photoelectric conversion region of the second pixel, forming an insulating film on an upper surface and a side surface of the photoelectric conversion region; forming an electrode on an upper surface of the photoelectric conversion region so as to be electrically connected to the photoelectric conversion region, and forming a first infrared light shielding film on a side surface of the insulating film on the side surface; forming an insulating film on an upper surface of an electrode that is in electrical contact with the photoelectric conversion region and on a side surface of the first infrared light shielding film; forming a top surface and a side wall of the photoelectric conversion region; A method for manufacturing the solid-state imaging device according to (D1).
  • the two infrared light-shielding films are is formed at the same time as the formation of an electrode for supplying power to the first pixel or the second pixel.
  • (D5) After forming the sidewall of the photoelectric conversion region, forming a metal film as a second infrared light shielding film in an area spaced a predetermined distance from a sidewall of the photoelectric conversion area; A method for manufacturing a solid-state imaging device according to any one of (D1) to (D4).
  • (D6) In the step of forming a side wall of the photoelectric conversion region, forming an insulating film on a plane of the incident surface of the photoelectric conversion region; forming a first infrared light shielding film on an upper surface of the insulating film on the flat surface; forming an insulating film on an upper surface of the first infrared light shielding film; A method for manufacturing a solid-state imaging device according to any one of (D1) to (D5).
  • (D7) At least two of the second pixels are formed adjacent to each other, The first infrared light shielding film is formed between the adjacent second pixels.
  • At least two of the second pixels are formed adjacent to each other,
  • the second infrared light shielding film is formed between the adjacent second pixels.
  • (D9) A step of forming at least one of an infrared light transmission filter or a chalcogenide layer according to any one of (B1) to (B18), A method for manufacturing a solid-state imaging device according to any one of (D1) to (D8).
  • the device according to the embodiment of the present disclosure may be configured as follows:
  • a solid-state imaging device comprising:
  • the wiring layer is The first pixel and the second pixel which are stacked together do not include the wiring between the first photoelectric conversion region and the second photoelectric conversion region.
  • the wiring layer is a void between the first photoelectric conversion region and the second photoelectric conversion region of the stacked first pixel and second pixel, the void allowing light in an infrared light band that has passed through the first pixel to pass therethrough; Equipped with A solid-state imaging device according to any one of (E1) to (E3).
  • the void has a film different from the insulating film filling the wiring layer;
  • the film other than the insulating film filling the wiring layer in the hole is a semiconductor film.
  • the holes are elliptical or rectangular in cross section;
  • a solid-state imaging device according to any one of (E1) to (E8).
  • the hole has a tapered rectangular cross section.
  • a solid-state imaging device according to any one of (E1) to (E8).
  • the wiring layer further comprises: The uneven shape is formed by insulating films of different materials.
  • a solid-state imaging device according to any one of (E1) to (E11).
  • (E13) At least one of an infrared light transmission filter or a chalcogenide layer according to any one of (A1) to (A13), or an infrared light transmission film according to any one of (C1) to (C13), A solid-state imaging device according to any one of (E1) to (E12).
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • a method for manufacturing a solid-state imaging device comprising: In a wiring layer disposed between the first pixel and the second pixel, a wiring for transmitting a signal from the first pixel is formed so as not to overlap with an incident surface of a photoelectric conversion region of the second pixel; A method for manufacturing a solid-state imaging device.
  • (F3) In the wiring layer, forming a metal wiring in a region where the wiring is to be formed, and forming a dummy metal wiring in a region where the void is to be formed; forming an insulating film on an upper surface of a region in which the wiring is to be formed and a region in which the voids are to be formed; Selectively removing the dummy metal wiring.
  • the selectively removing step includes: selectively removing an insulating film formed on an upper surface of a region in which the wiring is to be formed and a region in which the void is to be formed in at least a part of the region in which the void is to be formed; performing an etching process from the region where the insulating film has been selectively removed, thereby removing the dummy metal wiring formed in the region where the void is to be formed; A method for manufacturing a solid-state imaging device according to (F3).
  • the region in which the wiring is formed is formed so as not to be connected to at least the part of the region;
  • the region in which the voids are formed is formed so as to be connected to at least a portion of the region.
  • the wiring is selectively removing the insulating film in a region where the wiring is to be formed; forming a barrier metal in the region of the insulating film from which the insulating film has been removed; forming the metal wiring in the region of the removed insulating film via the barrier metal;
  • the voids are In the step of forming the wiring, the insulating film is selectively removed from a region in which the void is to be formed; forming the barrier metal in the region of the removed insulating film; forming the dummy metal wiring in the region of the removed insulating film via the barrier metal; The dummy metal wiring is removed to form The barrier metal is an anti-reflective film.
  • the voids are In the step of forming the wiring, the insulating film is selectively removed from a region in which the void is to be formed; forming the barrier metal in the region of the removed insulating film; forming the dummy metal wiring in the region of the removed insulating film via the barrier metal; The dummy metal wiring and the barrier metal are removed to form A method for manufacturing a solid-state imaging device according to (F6).
  • (F10) forming an insulating film in the hole, the insulating film being made of an insulating material different from the insulating film forming the wiring layer;
  • the holes are rectangular in cross section.
  • the holes are elliptical or rectangular in cross section; A method for manufacturing a solid-state imaging device according to any one of (F1) to (F14).
  • the hole has a tapered rectangular cross section.
  • (F18) A method for manufacturing at least one of an infrared light transmission filter or a chalcogenide layer according to any one of (B1) to (B18), or an infrared light transmission film according to any one of (D1) to (D8), A method for manufacturing a solid-state imaging device according to any one of (F1) to (F17).
  • the device according to the embodiment of the present disclosure may be configured as follows:
  • (G1) A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band; a wiring layer formed between the first pixel and the second pixel and including wiring for transmitting a signal output from the first pixel; Equipped with The second pixel is A first electrode located on the incident surface side of the photoelectric conversion region; A second electrode is located on a surface of the photoelectric conversion region opposite to the incident surface. Equipped with Solid-state imaging device.
  • the first electrode is a transparent electrode.
  • the first electrode is a semiconductor film.
  • the first electrode is a metal electrode.
  • (G5) a first contact that is connected to the first pixel and that supplies power to the first pixel or obtains a signal from the first pixel; Further equipped with the first contact is formed in an element isolation portion between the second photoelectric conversion regions;
  • a solid-state imaging device according to any one of (G1) to (G4).
  • Each of the second pixels includes an independent second photoelectric conversion region.
  • a solid-state imaging device according to any one of (G1) to (G6).
  • a plurality of the second pixels share the second photoelectric conversion region. formed in an element isolation portion between the second photoelectric conversion regions, A solid-state imaging device according to any one of (G1) to (G4).
  • (G9) At least one of an infrared light transmitting filter or a chalcogenide layer according to any one of (A1) to (A13), an infrared light transmitting film according to any one of (C1) to (C13), or a configuration of the wiring layer according to any one of (E1) to (E12), A solid-state imaging device according to any one of (G1) to (G8).
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • H1 A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: After forming the photoelectric conversion region in the second pixel, forming a first electrode on an upper surface of the photoelectric conversion region; forming an insulating film on an upper surface of the first electrode; The insulating film is turned upside down so that the insulating film is on the lower surface.
  • H2 A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: After forming the photoelectric conversion region in the second pixel, forming a first electrode on an upper surface of the photoelectric conversion region; forming an insulating film on an upper surface of the first electrode; The insulating film is turned upside down so that the insulating film is on the lower surface.
  • a second electrode is formed on the upper surface of the photoelectric conversion region.
  • the first electrode is a transparent electrode.
  • the transparent electrode is a semiconductor film.
  • the transparent electrode is a metal electrode.
  • the method includes a step of manufacturing at least one of an infrared light transmission filter or a chalcogenide layer according to any one of (B1) to (B18), an infrared light transmission film according to any one of (D1) to (D8), or a wiring layer formed between the first pixel and the second pixel according to any one of (F1) to (F17), A method for manufacturing a solid-state imaging device according to any one of (H1) to (H6).
  • the device according to the embodiment of the present disclosure may be configured as follows:
  • a first pixel having a first photoelectric conversion region that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel and having a second photoelectric conversion region that receives light in an infrared light band that has passed through the first pixel and generates a pixel signal in an infrared light band; a wiring layer formed between the first pixel and the second pixel and including wiring for transmitting a signal output from the first pixel; Equipped with The wiring layer is Regarding the first pixel and the second pixel which are stacked, the wiring,
  • a solid-state imaging device comprising:
  • a wiring for propagating a signal from the first pixel is output via a contact formed in a pixel separation of the second pixel.
  • the element isolation portion of the first pixel is a RDTI.
  • a solid-state imaging device according to any one of (I1) to (I4).
  • the element isolation portion of the first pixel is a metal-embedded RDTI.
  • a solid-state imaging device according to any one of (I1) to (I4).
  • the first pixels stacked on one of the second pixels are multiple.
  • a solid-state imaging device according to any one of (I1) to (I6).
  • the display device further includes at least one of an infrared light transmission filter or a chalcogenide layer according to any one of (A1) to (A13), an infrared light transmission film according to any one of (C1) to (C13), a configuration of the wiring layer according to any one of (E1) to (E12), or a first electrode and a second electrode according to any one of (G1) to (G8), A solid-state imaging device according to any one of (I1) to (I7).
  • the above solid-state imaging device can be manufactured by the following manufacturing method.
  • J1 A first pixel that receives light in a visible light band and generates a pixel signal in the visible light band; a second pixel formed by stacking with the first pixel, receiving light in an infrared light band that has passed through the first pixel and generating a pixel signal in an infrared light band;
  • a method for manufacturing a solid-state imaging device comprising: In a wiring layer disposed between the first pixel and the second pixel, A wiring for transmitting a signal from the first pixel is formed so as to overlap with an element isolation portion of the first pixel.
  • a method for manufacturing a solid-state imaging device In a wiring layer disposed between the first pixel and the second pixel, A wiring for transmitting a signal from the first pixel is formed so as to overlap with an element isolation portion of the first pixel.
  • the method includes a step of manufacturing at least one of an infrared light transmission filter or a chalcogenide layer according to any one of (B1) to (B18), an infrared light transmission film according to any one of (D1) to (D8), a wiring layer formed between the first pixel and the second pixel according to any one of (F1) to (F17), or a first electrode and a second electrode according to any one of (H1) to (H6), A method for manufacturing the solid-state imaging device according to (J1).
  • 1 Solid-state imaging device
  • 10 Sensor section, 100: 1st pixel, 102: second pixel, 104: Infrared light transmitting filter, 106: wiring layer, 108: On-chip lens, 110: color filter, 112: first photoelectric conversion region, 114: Light-shielding film, 116: pixel transistor, 118: Wiring, 120: Contact, 122: insulating film, 124: second photoelectric conversion region, 126: Contact, 128: Contact, 130: metal wiring layer; 132: InGaAs layer, 134: InP layer, 136: TMD membrane, 138: Wiring, 140: insulating film, 142: Contact, 144: Insulating film, 146: Infrared light shielding film, 148: Electrode, 150: Contact, 152: Contact, 154: Transparent electrode, 156: Vacancy, 158: Anti-reflective coating, 160: Insulating film, 162: Insulating film, 164: Insulating film, 166: Color filters,

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PCT/JP2024/013936 2023-04-28 2024-04-04 固体撮像装置及び電子機器 Ceased WO2024224980A1 (ja)

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EP24796738.3A EP4704155A1 (en) 2023-04-28 2024-04-04 Solid-state imaging device and electronic apparatus
KR1020257037896A KR20260002891A (ko) 2023-04-28 2024-04-04 고체 촬상 장치 및 전자 기기
CN202480025645.2A CN121128340A (zh) 2023-04-28 2024-04-04 固态成像装置和电子设备

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JPH05347399A (ja) * 1992-06-12 1993-12-27 Japan Energy Corp 赤外線検出装置
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