KR20230117569A - 광전 변환 소자, 광 검출 장치, 광 검출 시스템, 전자 기기 및 이동체 - Google Patents

광전 변환 소자, 광 검출 장치, 광 검출 시스템, 전자 기기 및 이동체 Download PDF

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KR20230117569A
KR20230117569A KR1020237018358A KR20237018358A KR20230117569A KR 20230117569 A KR20230117569 A KR 20230117569A KR 1020237018358 A KR1020237018358 A KR 1020237018358A KR 20237018358 A KR20237018358 A KR 20237018358A KR 20230117569 A KR20230117569 A KR 20230117569A
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South Korea
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photoelectric conversion
light
optical filter
conversion element
layer
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Pending
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KR1020237018358A
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Korean (ko)
Inventor
겐이치 무라타
마사히로 조에이
신타로 히라타
신고 다카하시
요시유키 오바
다카시 고지마
도미유키 유카와
요시후미 자이젠
도모히로 스기야마
마사키 오카모토
다쿠야 마스나가
유키 가와하라
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20230117569A publication Critical patent/KR20230117569A/ko
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    • HELECTRICITY
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    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65Light-sensitive field-effect devices, e.g. phototransistors
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    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/191Photoconductor image sensors
    • GPHYSICS
    • G02OPTICS
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    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
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    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
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    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/80Constructional details of image sensors
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    • H10F39/80Constructional details of image sensors
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
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    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • H10K39/34Organic image sensors integrated with organic light-emitting diodes [OLED]
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
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    • HELECTRICITY
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    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B23/00Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
    • G02B23/24Instruments or systems for viewing the inside of hollow bodies, e.g. fibrescopes
    • G02B23/2407Optical details
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/208Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • GPHYSICS
    • G02OPTICS
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    • G02B5/00Optical elements other than lenses
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    • H10F39/10Integrated devices
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    • H10F39/80Constructional details of image sensors
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    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020237018358A 2020-12-16 2021-12-14 광전 변환 소자, 광 검출 장치, 광 검출 시스템, 전자 기기 및 이동체 Pending KR20230117569A (ko)

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JPJP-P-2020-208716 2020-12-16
JP2020208716 2020-12-16
PCT/JP2021/046110 WO2022131268A1 (ja) 2020-12-16 2021-12-14 光電変換素子、光検出装置、光検出システム、電子機器および移動体

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US (1) US12520607B2 (https=)
EP (1) EP4266377A4 (https=)
JP (1) JP7805956B2 (https=)
KR (1) KR20230117569A (https=)
CN (1) CN116686097A (https=)
WO (1) WO2022131268A1 (https=)

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US12604551B2 (en) * 2022-01-14 2026-04-14 Semiconductor Components Industries, Llc Image pixels having IR sensors with reduced exposure to visible light
WO2024048488A1 (ja) * 2022-08-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2024060822A (ja) * 2022-10-20 2024-05-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置、電子機器、および光学素子
WO2024100993A1 (ja) * 2022-11-10 2024-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
WO2024162113A1 (ja) * 2023-02-03 2024-08-08 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光学素子、および電子機器
JPWO2024224980A1 (https=) * 2023-04-28 2024-10-31
KR20260049625A (ko) * 2023-08-15 2026-04-14 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치
WO2025115405A1 (ja) * 2023-11-28 2025-06-05 ソニーセミコンダクタソリューションズ株式会社 光検出装置
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EP4266377A1 (en) 2023-10-25
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WO2022131268A1 (ja) 2022-06-23
EP4266377A4 (en) 2024-05-08
US20240055465A1 (en) 2024-02-15
US12520607B2 (en) 2026-01-06
CN116686097A (zh) 2023-09-01

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