JP7801215B2 - 可撓性プラテン及びそれに関連する方法 - Google Patents

可撓性プラテン及びそれに関連する方法

Info

Publication number
JP7801215B2
JP7801215B2 JP2022525211A JP2022525211A JP7801215B2 JP 7801215 B2 JP7801215 B2 JP 7801215B2 JP 2022525211 A JP2022525211 A JP 2022525211A JP 2022525211 A JP2022525211 A JP 2022525211A JP 7801215 B2 JP7801215 B2 JP 7801215B2
Authority
JP
Japan
Prior art keywords
layer
temperature control
platen
control element
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022525211A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021091708A5 (https=
JP2023500831A (ja
JP2023500831A5 (https=
Inventor
ダーウェイ スン,
ミン イン,
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2023500831A publication Critical patent/JP2023500831A/ja
Publication of JPWO2021091708A5 publication Critical patent/JPWO2021091708A5/ja
Publication of JP2023500831A5 publication Critical patent/JP2023500831A5/ja
Application granted granted Critical
Publication of JP7801215B2 publication Critical patent/JP7801215B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616Monitoring of warpages, curvatures, damages, defects or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022525211A 2019-11-05 2020-10-24 可撓性プラテン及びそれに関連する方法 Active JP7801215B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/674,340 US11133213B2 (en) 2019-11-05 2019-11-05 Deflectable platen and associated method
US16/674,340 2019-11-05
PCT/US2020/057234 WO2021091708A1 (en) 2019-11-05 2020-10-24 Deflectable platen and associated method

Publications (4)

Publication Number Publication Date
JP2023500831A JP2023500831A (ja) 2023-01-11
JPWO2021091708A5 JPWO2021091708A5 (https=) 2023-11-01
JP2023500831A5 JP2023500831A5 (https=) 2023-11-01
JP7801215B2 true JP7801215B2 (ja) 2026-01-16

Family

ID=75688808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022525211A Active JP7801215B2 (ja) 2019-11-05 2020-10-24 可撓性プラテン及びそれに関連する方法

Country Status (6)

Country Link
US (1) US11133213B2 (https=)
JP (1) JP7801215B2 (https=)
KR (1) KR20220093176A (https=)
CN (1) CN114631177B (https=)
TW (1) TWI873213B (https=)
WO (1) WO2021091708A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031253A (ja) 1998-07-10 2000-01-28 Komatsu Ltd 基板処理装置及び方法
JP2005516379A (ja) 2001-06-28 2005-06-02 ラム リサーチ コーポレーション 高温静電チャック
JP2015517224A (ja) 2012-04-26 2015-06-18 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated リアルタイム加熱ゾーン調整機能を備えた高温静電チャック

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302550A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd 半導体製造装置
JP3149398B2 (ja) * 1998-06-16 2001-03-26 株式会社アドバンスト・ディスプレイ 液晶パネル製造装置および方法
JP2000124299A (ja) * 1998-10-16 2000-04-28 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
TW492135B (en) * 2000-05-25 2002-06-21 Tomoegawa Paper Co Ltd Adhesive sheets for static electricity chuck device, and static electricity chuck device
US6623563B2 (en) 2001-01-02 2003-09-23 Applied Materials, Inc. Susceptor with bi-metal effect
JP2007067349A (ja) * 2005-09-02 2007-03-15 Nissan Motor Co Ltd 圧接型半導体装置
JP4524268B2 (ja) * 2006-04-28 2010-08-11 信越化学工業株式会社 静電チャック機能付きセラミックヒーター及びその製造方法
DE102006022264B4 (de) * 2006-05-11 2008-04-03 Uhlmann Pac-Systeme Gmbh & Co. Kg Siegelwerkzeug zum Siegeln von Folien in einer Siegelstation
JP2011221006A (ja) * 2010-03-23 2011-11-04 Tokyo Electron Ltd ウェハ型温度検知センサおよびその製造方法
US9281252B1 (en) 2014-10-24 2016-03-08 Globalfoundries Inc. Method comprising applying an external mechanical stress to a semiconductor structure and semiconductor processing tool
US10054856B2 (en) 2015-02-12 2018-08-21 Toshiba Memory Corporation Exposure method, manufacturing method of device, and thin film sheet
JP6341457B1 (ja) * 2017-03-29 2018-06-13 Toto株式会社 静電チャック
JP2019057538A (ja) 2017-09-19 2019-04-11 株式会社アルバック 吸着装置、真空装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031253A (ja) 1998-07-10 2000-01-28 Komatsu Ltd 基板処理装置及び方法
JP2005516379A (ja) 2001-06-28 2005-06-02 ラム リサーチ コーポレーション 高温静電チャック
JP2015517224A (ja) 2012-04-26 2015-06-18 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated リアルタイム加熱ゾーン調整機能を備えた高温静電チャック

Also Published As

Publication number Publication date
CN114631177B (zh) 2025-08-19
KR20220093176A (ko) 2022-07-05
JP2023500831A (ja) 2023-01-11
TWI873213B (zh) 2025-02-21
TW202135204A (zh) 2021-09-16
CN114631177A (zh) 2022-06-14
WO2021091708A1 (en) 2021-05-14
US20210134650A1 (en) 2021-05-06
US11133213B2 (en) 2021-09-28

Similar Documents

Publication Publication Date Title
EP3483925A1 (en) Chuck plate for semiconductor post-processing, chuck structure having same chuck plate and chip separating apparatus having same chuck structure
WO2002082511A2 (en) Pedestal assembly with enhanced thermal conductivity
TWI891625B (zh) 用於形成沉積遮罩的方法、半導體處理結構、及用於半導體處理的方法
CN110729227A (zh) 用于结合基底的真空吸盘和设备以及结合基底的方法
JP7801215B2 (ja) 可撓性プラテン及びそれに関連する方法
WO2019211928A1 (ja) 保持装置の製造方法
JPH0256918A (ja) 半導体ウェハの直接接合方法
JP7739273B2 (ja) 撓み可能なプラテン及び関連する方法
JP7645282B2 (ja) 静電クランプシステムおよび方法
CN107533997B (zh) 工件固持加热设备
US20240166495A1 (en) Device with a stress decoupling structure
CN110770923B (zh) 热电模块
US20230402309A1 (en) Substrate fixing device
JP7547282B2 (ja) セラミック構造体の製造方法
CN116959948B (zh) 一种静电吸盘以及等离子体刻蚀装置
US20250132183A1 (en) Wafer chuck
KR20240093918A (ko) 고온들에서 반도체 작업물들을 처리하기 위한 척
JPH06188166A (ja) 静電接合方法
WO2023136096A1 (ja) 保持装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231024

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20241017

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250617

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251202

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260105

R150 Certificate of patent or registration of utility model

Ref document number: 7801215

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150