TWI873213B - 可偏轉壓板以及使壓板偏轉的方法 - Google Patents

可偏轉壓板以及使壓板偏轉的方法 Download PDF

Info

Publication number
TWI873213B
TWI873213B TW109137685A TW109137685A TWI873213B TW I873213 B TWI873213 B TW I873213B TW 109137685 A TW109137685 A TW 109137685A TW 109137685 A TW109137685 A TW 109137685A TW I873213 B TWI873213 B TW I873213B
Authority
TW
Taiwan
Prior art keywords
layer
temperature control
control element
pressure plate
platen
Prior art date
Application number
TW109137685A
Other languages
English (en)
Chinese (zh)
Other versions
TW202135204A (zh
Inventor
孫大偉
明 殷
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202135204A publication Critical patent/TW202135204A/zh
Application granted granted Critical
Publication of TWI873213B publication Critical patent/TWI873213B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109137685A 2019-11-05 2020-10-29 可偏轉壓板以及使壓板偏轉的方法 TWI873213B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/674,340 US11133213B2 (en) 2019-11-05 2019-11-05 Deflectable platen and associated method
US16/674,340 2019-11-05

Publications (2)

Publication Number Publication Date
TW202135204A TW202135204A (zh) 2021-09-16
TWI873213B true TWI873213B (zh) 2025-02-21

Family

ID=75688808

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109137685A TWI873213B (zh) 2019-11-05 2020-10-29 可偏轉壓板以及使壓板偏轉的方法

Country Status (6)

Country Link
US (1) US11133213B2 (https=)
JP (1) JP7801215B2 (https=)
KR (1) KR20220093176A (https=)
CN (1) CN114631177B (https=)
TW (1) TWI873213B (https=)
WO (1) WO2021091708A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031253A (ja) * 1998-07-10 2000-01-28 Komatsu Ltd 基板処理装置及び方法
TW492135B (en) * 2000-05-25 2002-06-21 Tomoegawa Paper Co Ltd Adhesive sheets for static electricity chuck device, and static electricity chuck device
TW200802679A (en) * 2006-04-28 2008-01-01 Shinetsu Chemical Co Electrostatic chuck and method for making the same
US9281252B1 (en) * 2014-10-24 2016-03-08 Globalfoundries Inc. Method comprising applying an external mechanical stress to a semiconductor structure and semiconductor processing tool
TW201838089A (zh) * 2017-03-29 2018-10-16 日商Ｔｏｔｏ股份有限公司 靜電吸盤

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302550A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd 半導体製造装置
JP3149398B2 (ja) * 1998-06-16 2001-03-26 株式会社アドバンスト・ディスプレイ 液晶パネル製造装置および方法
JP2000124299A (ja) * 1998-10-16 2000-04-28 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
US6623563B2 (en) 2001-01-02 2003-09-23 Applied Materials, Inc. Susceptor with bi-metal effect
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
JP2007067349A (ja) * 2005-09-02 2007-03-15 Nissan Motor Co Ltd 圧接型半導体装置
DE102006022264B4 (de) * 2006-05-11 2008-04-03 Uhlmann Pac-Systeme Gmbh & Co. Kg Siegelwerkzeug zum Siegeln von Folien in einer Siegelstation
JP2011221006A (ja) * 2010-03-23 2011-11-04 Tokyo Electron Ltd ウェハ型温度検知センサおよびその製造方法
US9948214B2 (en) * 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US10054856B2 (en) 2015-02-12 2018-08-21 Toshiba Memory Corporation Exposure method, manufacturing method of device, and thin film sheet
JP2019057538A (ja) 2017-09-19 2019-04-11 株式会社アルバック 吸着装置、真空装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031253A (ja) * 1998-07-10 2000-01-28 Komatsu Ltd 基板処理装置及び方法
TW492135B (en) * 2000-05-25 2002-06-21 Tomoegawa Paper Co Ltd Adhesive sheets for static electricity chuck device, and static electricity chuck device
TW200802679A (en) * 2006-04-28 2008-01-01 Shinetsu Chemical Co Electrostatic chuck and method for making the same
US9281252B1 (en) * 2014-10-24 2016-03-08 Globalfoundries Inc. Method comprising applying an external mechanical stress to a semiconductor structure and semiconductor processing tool
TW201838089A (zh) * 2017-03-29 2018-10-16 日商Ｔｏｔｏ股份有限公司 靜電吸盤

Also Published As

Publication number Publication date
CN114631177B (zh) 2025-08-19
JP7801215B2 (ja) 2026-01-16
KR20220093176A (ko) 2022-07-05
JP2023500831A (ja) 2023-01-11
TW202135204A (zh) 2021-09-16
CN114631177A (zh) 2022-06-14
WO2021091708A1 (en) 2021-05-14
US20210134650A1 (en) 2021-05-06
US11133213B2 (en) 2021-09-28

Similar Documents

Publication Publication Date Title
CN1293620C (zh) 高温静电夹盘
JP6728196B2 (ja) 高温ポリマー接合によって金属ベースに接合されたセラミックス静電チャック
EP0512936A1 (en) Temperature cycling ceramic electrostatic chuck
US20230118651A1 (en) Replaceable electrostatic chuck outer ring for edge arcing mitigation
TWI385725B (zh) A structure that reduces the deposition of polymer on the backside of the substrate
CN110729227A (zh) 用于结合基底的真空吸盘和设备以及结合基底的方法
TWI873213B (zh) 可偏轉壓板以及使壓板偏轉的方法
TW466560B (en) Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure
JP7645282B2 (ja) 静電クランプシステムおよび方法
CN121195340A (zh) 使用无机介电键合的基板支撑装置的制造
CN114402427B (zh) 可偏转压板以及使压板偏转的方法
US12424477B2 (en) Wafer chuck
EP4371931A1 (en) Mems device with a stress decoupling structure
JP3602410B2 (ja) 成膜装置
KR20250011141A (ko) 고장 보호를 갖는 고온 기판 지지 조립체
JPS63130784A (ja) マイクロ波プラズマ処理装置