JP7790019B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置

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Publication number
JP7790019B2
JP7790019B2 JP2023510875A JP2023510875A JP7790019B2 JP 7790019 B2 JP7790019 B2 JP 7790019B2 JP 2023510875 A JP2023510875 A JP 2023510875A JP 2023510875 A JP2023510875 A JP 2023510875A JP 7790019 B2 JP7790019 B2 JP 7790019B2
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light
layer
insulating film
wiring
emitting
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JP2023510875A
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JPWO2022209824A1 (https=
Inventor
肇 秋元
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Nichia Corp
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Nichia Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2023510875A 2021-03-30 2022-03-14 画像表示装置の製造方法および画像表示装置 Active JP7790019B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021057934 2021-03-30
JP2021057934 2021-03-30
PCT/JP2022/011368 WO2022209824A1 (ja) 2021-03-30 2022-03-14 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022209824A1 JPWO2022209824A1 (https=) 2022-10-06
JP7790019B2 true JP7790019B2 (ja) 2025-12-23

Family

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JP2023510875A Active JP7790019B2 (ja) 2021-03-30 2022-03-14 画像表示装置の製造方法および画像表示装置

Country Status (4)

Country Link
US (1) US20240021773A1 (https=)
JP (1) JP7790019B2 (https=)
CN (1) CN116897383A (https=)
WO (1) WO2022209824A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118969934B (zh) * 2024-07-02 2025-11-18 厦门三安光电有限公司 一种发光二极管及发光装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
US20140124799A1 (en) 2012-11-07 2014-05-08 Electronics And Telecommunications Research Institute Light emitting diodes and methods of fabricating the same
JP2015015321A (ja) 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
JP2016512347A (ja) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
WO2018157610A1 (zh) 2017-03-03 2018-09-07 京东方科技集团股份有限公司 发光二极管显示基板及其制作方法、显示器
US20180301442A1 (en) 2017-02-24 2018-10-18 Shenzhen China Star Optoelectronics Technology Co., Ltd. Light emitting diode display and manufacture method thereof
JP2018205741A (ja) 2017-06-05 2018-12-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ディスプレイ装置、電子機器、発光素子
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
JP2020088392A (ja) 2018-11-23 2020-06-04 エルジー ディスプレイ カンパニー リミテッド 表示装置及び表示装置の製造方法
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP2020205336A (ja) 2019-06-17 2020-12-24 キヤノン株式会社 発光素子、発光素子の製造方法
WO2021006112A1 (ja) 2019-07-10 2021-01-14 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

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US9130114B2 (en) * 2005-01-11 2015-09-08 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
JP5368620B1 (ja) * 2012-11-22 2013-12-18 株式会社東芝 半導体発光素子及びその製造方法
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102527303B1 (ko) * 2017-10-31 2023-04-27 엘지디스플레이 주식회사 발광 표시 장치
CN114175261A (zh) * 2019-07-25 2022-03-11 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
WO2021020393A1 (ja) * 2019-07-30 2021-02-04 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN112002733B (zh) * 2020-08-06 2023-12-01 武汉华星光电半导体显示技术有限公司 Oled显示装置及制备方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120141799A1 (en) 2010-12-03 2012-06-07 Francis Kub Film on Graphene on a Substrate and Method and Devices Therefor
US20140124799A1 (en) 2012-11-07 2014-05-08 Electronics And Telecommunications Research Institute Light emitting diodes and methods of fabricating the same
JP2016512347A (ja) 2013-03-15 2016-04-25 ルクスビュー テクノロジー コーポレイション 冗長性スキームを備えた発光ダイオードディスプレイ、及び統合欠陥検出検査を備えた発光ダイオードディスプレイを製造する方法
JP2015015321A (ja) 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
US20180301442A1 (en) 2017-02-24 2018-10-18 Shenzhen China Star Optoelectronics Technology Co., Ltd. Light emitting diode display and manufacture method thereof
WO2018157610A1 (zh) 2017-03-03 2018-09-07 京东方科技集团股份有限公司 发光二极管显示基板及其制作方法、显示器
JP2018205741A (ja) 2017-06-05 2018-12-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． ディスプレイ装置、電子機器、発光素子
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
JP2020088392A (ja) 2018-11-23 2020-06-04 エルジー ディスプレイ カンパニー リミテッド 表示装置及び表示装置の製造方法
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP2020205336A (ja) 2019-06-17 2020-12-24 キヤノン株式会社 発光素子、発光素子の製造方法
WO2021006112A1 (ja) 2019-07-10 2021-01-14 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

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JPWO2022209824A1 (https=) 2022-10-06
WO2022209824A1 (ja) 2022-10-06
CN116897383A (zh) 2023-10-17
US20240021773A1 (en) 2024-01-18

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