JP7781175B2 - レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法 - Google Patents

レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法

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Publication number
JP7781175B2
JP7781175B2 JP2023557510A JP2023557510A JP7781175B2 JP 7781175 B2 JP7781175 B2 JP 7781175B2 JP 2023557510 A JP2023557510 A JP 2023557510A JP 2023557510 A JP2023557510 A JP 2023557510A JP 7781175 B2 JP7781175 B2 JP 7781175B2
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JP
Japan
Prior art keywords
laser light
optical system
laser
transparent substrate
light source
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JP2023557510A
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English (en)
Japanese (ja)
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JPWO2023079648A1 (https=
Inventor
英通 鎌倉
直之 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSW Aktina System Co Ltd
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JSW Aktina System Co Ltd
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Recrystallisation Techniques (AREA)
JP2023557510A 2021-11-04 2021-11-04 レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法 Active JP7781175B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/040657 WO2023079648A1 (ja) 2021-11-04 2021-11-04 レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法

Publications (2)

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JPWO2023079648A1 JPWO2023079648A1 (https=) 2023-05-11
JP7781175B2 true JP7781175B2 (ja) 2025-12-05

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JP2023557510A Active JP7781175B2 (ja) 2021-11-04 2021-11-04 レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法

Country Status (3)

Country Link
JP (1) JP7781175B2 (https=)
CN (1) CN118160069A (https=)
WO (1) WO2023079648A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158173A (ja) 2000-09-05 2002-05-31 Sony Corp 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置
JP2002217125A (ja) 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法
JP2009135430A (ja) 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010141190A (ja) 2008-12-12 2010-06-24 Shimadzu Corp レーザ結晶化装置
JP2017152498A (ja) 2016-02-23 2017-08-31 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタ基板
JP2018060888A (ja) 2016-10-04 2018-04-12 株式会社日本製鋼所 レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法
JP2020145362A (ja) 2019-03-08 2020-09-10 株式会社日本製鋼所 レーザ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3196132B2 (ja) * 1992-11-16 2001-08-06 東京エレクトロン株式会社 液晶ディスプレイ基板の製造方法、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置
JP4056577B2 (ja) * 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JP3528577B2 (ja) * 1998-03-04 2004-05-17 セイコーエプソン株式会社 半導体装置の製造方法及びアニール装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158173A (ja) 2000-09-05 2002-05-31 Sony Corp 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置
JP2002217125A (ja) 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法
JP2009135430A (ja) 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010141190A (ja) 2008-12-12 2010-06-24 Shimadzu Corp レーザ結晶化装置
JP2017152498A (ja) 2016-02-23 2017-08-31 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタ基板
JP2018060888A (ja) 2016-10-04 2018-04-12 株式会社日本製鋼所 レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法
JP2020145362A (ja) 2019-03-08 2020-09-10 株式会社日本製鋼所 レーザ処理装置

Also Published As

Publication number Publication date
WO2023079648A1 (ja) 2023-05-11
JPWO2023079648A1 (https=) 2023-05-11
CN118160069A (zh) 2024-06-07

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