JPWO2023079648A1 - - Google Patents
Info
- Publication number
- JPWO2023079648A1 JPWO2023079648A1 JP2023557510A JP2023557510A JPWO2023079648A1 JP WO2023079648 A1 JPWO2023079648 A1 JP WO2023079648A1 JP 2023557510 A JP2023557510 A JP 2023557510A JP 2023557510 A JP2023557510 A JP 2023557510A JP WO2023079648 A1 JPWO2023079648 A1 JP WO2023079648A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/040657 WO2023079648A1 (ja) | 2021-11-04 | 2021-11-04 | レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023079648A1 true JPWO2023079648A1 (https=) | 2023-05-11 |
| JP7781175B2 JP7781175B2 (ja) | 2025-12-05 |
Family
ID=86240821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023557510A Active JP7781175B2 (ja) | 2021-11-04 | 2021-11-04 | レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7781175B2 (https=) |
| CN (1) | CN118160069A (https=) |
| WO (1) | WO2023079648A1 (https=) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08129189A (ja) * | 1992-11-16 | 1996-05-21 | Tokyo Electron Ltd | 液晶ディスプレイ基板の製造方法、その装置、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置 |
| JPH10242073A (ja) * | 1997-02-28 | 1998-09-11 | Semiconductor Energy Lab Co Ltd | レーザー照射装置およびレーザー照射方法 |
| JPH11251261A (ja) * | 1998-03-04 | 1999-09-17 | Seiko Epson Corp | 半導体膜の製造方法、およびアニール装置及び薄膜トランジスタの製造方法及び液晶表示装置用アクティブマトリクス基板 |
| JP2002158173A (ja) * | 2000-09-05 | 2002-05-31 | Sony Corp | 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置 |
| JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2010141190A (ja) * | 2008-12-12 | 2010-06-24 | Shimadzu Corp | レーザ結晶化装置 |
| JP2017152498A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社ブイ・テクノロジー | レーザアニール方法、レーザアニール装置及び薄膜トランジスタ基板 |
| JP2018060888A (ja) * | 2016-10-04 | 2018-04-12 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| JP2020145362A (ja) * | 2019-03-08 | 2020-09-10 | 株式会社日本製鋼所 | レーザ処理装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217125A (ja) | 2001-01-23 | 2002-08-02 | Sumitomo Heavy Ind Ltd | 表面処理装置及び方法 |
-
2021
- 2021-11-04 WO PCT/JP2021/040657 patent/WO2023079648A1/ja not_active Ceased
- 2021-11-04 CN CN202180103205.0A patent/CN118160069A/zh active Pending
- 2021-11-04 JP JP2023557510A patent/JP7781175B2/ja active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08129189A (ja) * | 1992-11-16 | 1996-05-21 | Tokyo Electron Ltd | 液晶ディスプレイ基板の製造方法、その装置、半導体結晶の評価方法、半導体結晶薄膜の製造方法及び半導体結晶薄膜の製造装置 |
| JPH10242073A (ja) * | 1997-02-28 | 1998-09-11 | Semiconductor Energy Lab Co Ltd | レーザー照射装置およびレーザー照射方法 |
| JPH11251261A (ja) * | 1998-03-04 | 1999-09-17 | Seiko Epson Corp | 半導体膜の製造方法、およびアニール装置及び薄膜トランジスタの製造方法及び液晶表示装置用アクティブマトリクス基板 |
| JP2002158173A (ja) * | 2000-09-05 | 2002-05-31 | Sony Corp | 薄膜の製造方法、半導体薄膜、半導体装置、半導体薄膜の製造方法、及び半導体薄膜製造装置 |
| JP2009135430A (ja) * | 2007-10-10 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2010141190A (ja) * | 2008-12-12 | 2010-06-24 | Shimadzu Corp | レーザ結晶化装置 |
| JP2017152498A (ja) * | 2016-02-23 | 2017-08-31 | 株式会社ブイ・テクノロジー | レーザアニール方法、レーザアニール装置及び薄膜トランジスタ基板 |
| JP2018060888A (ja) * | 2016-10-04 | 2018-04-12 | 株式会社日本製鋼所 | レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 |
| JP2020145362A (ja) * | 2019-03-08 | 2020-09-10 | 株式会社日本製鋼所 | レーザ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023079648A1 (ja) | 2023-05-11 |
| JP7781175B2 (ja) | 2025-12-05 |
| CN118160069A (zh) | 2024-06-07 |
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