JP7779257B2 - 組成物、及び接着性ポリマーの洗浄方法 - Google Patents

組成物、及び接着性ポリマーの洗浄方法

Info

Publication number
JP7779257B2
JP7779257B2 JP2022514393A JP2022514393A JP7779257B2 JP 7779257 B2 JP7779257 B2 JP 7779257B2 JP 2022514393 A JP2022514393 A JP 2022514393A JP 2022514393 A JP2022514393 A JP 2022514393A JP 7779257 B2 JP7779257 B2 JP 7779257B2
Authority
JP
Japan
Prior art keywords
composition
mass
group
formula
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022514393A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021205885A1 (https=
Inventor
宏太朗 林
晋 中崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2021205885A1 publication Critical patent/JPWO2021205885A1/ja
Application granted granted Critical
Publication of JP7779257B2 publication Critical patent/JP7779257B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C11D7/30—Halogenated hydrocarbons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5018—Halogenated solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5027—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5036—Azeotropic mixtures containing halogenated solvents
    • C11D7/5068—Mixtures of halogenated and non-halogenated solvents
    • C11D7/5095—Mixtures including solvents containing other heteroatoms than oxygen, e.g. nitriles, amides, nitroalkanes, siloxanes or thioethers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Detergent Compositions (AREA)
  • Adhesives Or Adhesive Processes (AREA)
JP2022514393A 2020-04-09 2021-03-24 組成物、及び接着性ポリマーの洗浄方法 Active JP7779257B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020070543 2020-04-09
JP2020070543 2020-04-09
PCT/JP2021/012376 WO2021205885A1 (ja) 2020-04-09 2021-03-24 組成物、及び接着性ポリマーの洗浄方法

Publications (2)

Publication Number Publication Date
JPWO2021205885A1 JPWO2021205885A1 (https=) 2021-10-14
JP7779257B2 true JP7779257B2 (ja) 2025-12-03

Family

ID=78023037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022514393A Active JP7779257B2 (ja) 2020-04-09 2021-03-24 組成物、及び接着性ポリマーの洗浄方法

Country Status (6)

Country Link
US (1) US12577508B2 (https=)
JP (1) JP7779257B2 (https=)
KR (1) KR102924922B1 (https=)
CN (1) CN115427547A (https=)
TW (1) TWI769770B (https=)
WO (1) WO2021205885A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023120322A1 (https=) * 2021-12-24 2023-06-29
US20240117280A1 (en) * 2022-09-16 2024-04-11 Tokyo Ohka Kogyo Co., Ltd. Metal residue removing liquid, metal residue removing method, and metal wiring manufacturing method
TWI894074B (zh) * 2024-12-16 2025-08-11 鴻悅先進科技股份有限公司 清洗劑組成物及使用其去除高分子膜之方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030148904A1 (en) 2002-02-01 2003-08-07 Moore John C. Cured polymers dissolving compositions
JP2004000969A (ja) 2002-05-31 2004-01-08 Internatl Business Mach Corp <Ibm> 電子コンポーネントからシリコーンポリマ付着物を除去する方法
JP2004361433A (ja) 2003-05-30 2004-12-24 Mitsubishi Gas Chem Co Inc 表面処理液
WO2018043690A1 (ja) 2016-09-02 2018-03-08 富士フイルム株式会社 溶液、溶液収容体、感活性光線性又は感放射線性樹脂組成物、パターン形成方法、半導体デバイスの製造方法
US20180265819A1 (en) 2015-12-04 2018-09-20 Samsung Electronics Co., Ltd. Composition for removing silicone resins and method of thinning substrate by using the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
JP2006503972A (ja) * 2002-10-22 2006-02-02 イーケーシー テクノロジー，インコーポレイティド 半導体デバイスを洗浄するための水性リン酸組成物
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
WO2006110645A2 (en) * 2005-04-11 2006-10-19 Advanced Technology Materials, Inc. Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US20080234162A1 (en) * 2007-03-21 2008-09-25 General Chemical Performance Products Llc Semiconductor etch residue remover and cleansing compositions
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
US9063431B2 (en) * 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
DE102011088885A1 (de) 2011-12-16 2013-06-20 Wacker Chemie Ag Siliconlöser
KR101974224B1 (ko) * 2012-11-09 2019-05-02 동우 화인켐 주식회사 접착 폴리머 제거용 조성물
JP2014133855A (ja) 2012-12-11 2014-07-24 Fujifilm Corp シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法
JP6363116B2 (ja) * 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102101722B1 (ko) * 2014-05-02 2020-04-20 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정액 및 세정방법
KR102347599B1 (ko) * 2014-12-16 2022-01-10 동우 화인켐 주식회사 실리콘계 수지 제거용 조성물
KR102223781B1 (ko) * 2015-01-22 2021-03-05 동우 화인켐 주식회사 경화 고분자 제거용 조성물
US10233413B2 (en) * 2015-09-23 2019-03-19 Versum Materials Us, Llc Cleaning formulations
US10731109B2 (en) * 2017-04-11 2020-08-04 Entegris, Inc. Post chemical mechanical polishing formulations and method of use
JP7574798B2 (ja) * 2019-08-27 2024-10-29 株式会社レゾナック 組成物、及び接着性ポリマーの洗浄方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030148904A1 (en) 2002-02-01 2003-08-07 Moore John C. Cured polymers dissolving compositions
JP2004000969A (ja) 2002-05-31 2004-01-08 Internatl Business Mach Corp <Ibm> 電子コンポーネントからシリコーンポリマ付着物を除去する方法
JP2004361433A (ja) 2003-05-30 2004-12-24 Mitsubishi Gas Chem Co Inc 表面処理液
US20180265819A1 (en) 2015-12-04 2018-09-20 Samsung Electronics Co., Ltd. Composition for removing silicone resins and method of thinning substrate by using the same
WO2018043690A1 (ja) 2016-09-02 2018-03-08 富士フイルム株式会社 溶液、溶液収容体、感活性光線性又は感放射線性樹脂組成物、パターン形成方法、半導体デバイスの製造方法

Also Published As

Publication number Publication date
WO2021205885A1 (ja) 2021-10-14
KR102924922B1 (ko) 2026-02-10
TW202202610A (zh) 2022-01-16
TWI769770B (zh) 2022-07-01
KR20220108107A (ko) 2022-08-02
US20230039366A1 (en) 2023-02-09
JPWO2021205885A1 (https=) 2021-10-14
US12577508B2 (en) 2026-03-17
CN115427547A (zh) 2022-12-02

Similar Documents

Publication Publication Date Title
JP7574798B2 (ja) 組成物、及び接着性ポリマーの洗浄方法
KR102467591B1 (ko) 조성물, 접착성 폴리머의 세정 방법, 디바이스 웨이퍼의 제조 방법, 및 지지 웨이퍼의 재생 방법
JP7619277B2 (ja) 分解洗浄組成物の製造方法
JP7779257B2 (ja) 組成物、及び接着性ポリマーの洗浄方法
CN113302269A (zh) 分解清洗组合物、粘接性聚合物的清洗方法及器件晶圆的制造方法
JP2024173330A (ja) 接着性ポリマーの洗浄方法
JP7852632B2 (ja) 分解洗浄組成物及びその製造方法、並びに接着性ポリマーの洗浄方法
TWI869744B (zh) 分解洗淨組成物及其製造方法
TWI824513B (zh) 分解洗淨組成物及其製造方法，以及接著性聚合物之洗淨方法
JP2025140006A (ja) 洗浄組成物及び洗浄組成物の製造方法
JP2025073670A (ja) 接着性ポリマーの洗浄方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20230131

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20230202

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20230307

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241203

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20250422

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250716

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20251021

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20251103

R150 Certificate of patent or registration of utility model

Ref document number: 7779257

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150