JP7766024B2 - コンフォーマルかつ平滑な窒化チタン層及びその形成方法 - Google Patents

コンフォーマルかつ平滑な窒化チタン層及びその形成方法

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Publication number
JP7766024B2
JP7766024B2 JP2022520985A JP2022520985A JP7766024B2 JP 7766024 B2 JP7766024 B2 JP 7766024B2 JP 2022520985 A JP2022520985 A JP 2022520985A JP 2022520985 A JP2022520985 A JP 2022520985A JP 7766024 B2 JP7766024 B2 JP 7766024B2
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precursor
exposure
thin film
vapor deposition
forming
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JPWO2021071625A5 (https=
JP2022552204A (ja
JP2022552204A5 (https=
Inventor
ジュング、スング－ホーン
ムクヘルジー、ニロイ
オクヤマ、ヨシカズ
ナグヒボラシュラフィ、ナリマン
ニエ、ブンセン、ビー．
キム、ハエ、ヤング
ラシ、ソミルクマール、ジェイ．
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ユージェヌス インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2022520985A 2019-10-08 2020-09-14 コンフォーマルかつ平滑な窒化チタン層及びその形成方法 Active JP7766024B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025180204A JP2026012867A (ja) 2019-10-08 2025-10-27 コンフォーマルかつ平滑な窒化チタン層及びその形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/595,945 US11482413B2 (en) 2019-10-08 2019-10-08 Conformal and smooth titanium nitride layers and methods of forming the same
US16/595,945 2019-10-08
PCT/US2020/050627 WO2021071625A1 (en) 2019-10-08 2020-09-14 Conformal and smooth titanium nitride layers and methods of forming the same

Related Child Applications (1)

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JP2025180204A Division JP2026012867A (ja) 2019-10-08 2025-10-27 コンフォーマルかつ平滑な窒化チタン層及びその形成方法

Publications (4)

Publication Number Publication Date
JP2022552204A JP2022552204A (ja) 2022-12-15
JPWO2021071625A5 JPWO2021071625A5 (https=) 2023-09-20
JP2022552204A5 JP2022552204A5 (https=) 2023-09-20
JP7766024B2 true JP7766024B2 (ja) 2025-11-07

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JP2022520985A Active JP7766024B2 (ja) 2019-10-08 2020-09-14 コンフォーマルかつ平滑な窒化チタン層及びその形成方法
JP2025180204A Pending JP2026012867A (ja) 2019-10-08 2025-10-27 コンフォーマルかつ平滑な窒化チタン層及びその形成方法

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Country Status (6)

Country Link
US (2) US11482413B2 (https=)
JP (2) JP7766024B2 (https=)
KR (1) KR20220082859A (https=)
CN (1) CN114729451A (https=)
TW (1) TWI872126B (https=)
WO (1) WO2021071625A1 (https=)

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US12272599B2 (en) 2019-10-08 2025-04-08 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 (en) 2019-10-08 2025-04-22 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12444648B2 (en) 2019-10-08 2025-10-14 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
US11482413B2 (en) 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12431388B2 (en) 2019-10-08 2025-09-30 Eugenus, Inc. Conformal titanium silicon nitride-based thin films and methods of forming same
KR102254394B1 (ko) * 2020-07-16 2021-05-24 솔브레인 주식회사 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판
US20240234482A9 (en) * 2022-10-19 2024-07-11 Micron Technology, Inc. Microelectronic devices including capacitors, and related electronic systems and methods
US20250054748A1 (en) * 2023-08-09 2025-02-13 Applied Materials, Inc. Adhesion improvements in metal-containing hardmasks

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US20050054196A1 (en) 2003-09-08 2005-03-10 Taiwan Semiconductor Manufacturing Co., Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
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US20030124798A1 (en) 2001-12-27 2003-07-03 Hyun-Seok Lim Method of manufacturing a semiconductor device using a two-step deposition process
US20050054196A1 (en) 2003-09-08 2005-03-10 Taiwan Semiconductor Manufacturing Co., Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
JP2006057180A (ja) 2004-08-19 2006-03-02 Ips Ltd 多重積層膜構造の金属窒化膜の蒸着方法
WO2010055603A1 (ja) 2008-11-12 2010-05-20 パナソニック株式会社 半導体装置及びその製造方法
JP2011006783A (ja) 2009-05-25 2011-01-13 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法及び基板処理装置
JP2012193445A (ja) 2011-02-28 2012-10-11 Tokyo Electron Ltd 窒化チタン膜の形成方法、窒化チタン膜の形成装置及びプログラム
JP2015078418A (ja) 2013-10-18 2015-04-23 東京エレクトロン株式会社 成膜方法および成膜装置
WO2015145751A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US20190304790A1 (en) 2018-03-27 2019-10-03 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

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Publication number Publication date
US20210104396A1 (en) 2021-04-08
US11482413B2 (en) 2022-10-25
US20230215725A1 (en) 2023-07-06
JP2026012867A (ja) 2026-01-27
TWI872126B (zh) 2025-02-11
WO2021071625A1 (en) 2021-04-15
JP2022552204A (ja) 2022-12-15
TW202122621A (zh) 2021-06-16
KR20220082859A (ko) 2022-06-17
CN114729451A (zh) 2022-07-08
US12308226B2 (en) 2025-05-20

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