JP7742877B2 - 磁場を用いるプラズマ放電の不均一性制御 - Google Patents

磁場を用いるプラズマ放電の不均一性制御

Info

Publication number
JP7742877B2
JP7742877B2 JP2023516489A JP2023516489A JP7742877B2 JP 7742877 B2 JP7742877 B2 JP 7742877B2 JP 2023516489 A JP2023516489 A JP 2023516489A JP 2023516489 A JP2023516489 A JP 2023516489A JP 7742877 B2 JP7742877 B2 JP 7742877B2
Authority
JP
Japan
Prior art keywords
magnetic field
axial
radial
vacuum chamber
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023516489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023541910A (ja
JP2023541910A5 (https=
Inventor
パナゴプーロス・テオドロス
マラクタノフ・アレクセイ・エム．
ジ・ビング
ラ レラ・アンソニー デ
ホランド・ジョン・ピー．
ウー ペン・ドン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023541910A publication Critical patent/JP2023541910A/ja
Publication of JP2023541910A5 publication Critical patent/JP2023541910A5/ja
Application granted granted Critical
Publication of JP7742877B2 publication Critical patent/JP7742877B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2023516489A 2020-09-18 2021-08-30 磁場を用いるプラズマ放電の不均一性制御 Active JP7742877B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063080513P 2020-09-18 2020-09-18
US63/080,513 2020-09-18
PCT/US2021/048276 WO2022060562A1 (en) 2020-09-18 2021-08-30 Plasma discharge uniformity control using magnetic fields

Publications (3)

Publication Number Publication Date
JP2023541910A JP2023541910A (ja) 2023-10-04
JP2023541910A5 JP2023541910A5 (https=) 2024-09-06
JP7742877B2 true JP7742877B2 (ja) 2025-09-22

Family

ID=80776327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023516489A Active JP7742877B2 (ja) 2020-09-18 2021-08-30 磁場を用いるプラズマ放電の不均一性制御

Country Status (5)

Country Link
US (1) US20230260768A1 (https=)
JP (1) JP7742877B2 (https=)
KR (1) KR20230067578A (https=)
CN (1) CN116171651A (https=)
WO (1) WO2022060562A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12278089B2 (en) 2023-01-31 2025-04-15 Applied Materials, Inc. Plasma uniformity control system and methods
WO2024228931A1 (en) * 2023-05-03 2024-11-07 Lam Research Corporation Systems and methods for achieving uniformity with multiple coils

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003342757A (ja) 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
JP2006237590A (ja) 2005-01-28 2006-09-07 Applied Materials Inc プラズマ均一性およびデバイス損傷減少のためのカスプ、ソレノイドおよびミラー磁場用最小ｄｃコイルを持ったプラズマ反応器
JP2010056114A (ja) 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2010519710A (ja) 2007-02-26 2010-06-03 ビーコ・インスツルメンツ・インコーポレーテッド イオン源およびイオン源の電磁石を動作させる方法
JP2014511567A (ja) 2011-02-16 2014-05-15 マッパー・リソグラフィー・アイピー・ビー．ブイ． 磁気シールド用システム
US20160027613A1 (en) 2014-07-24 2016-01-28 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
JP2017524237A (ja) 2014-08-19 2017-08-24 ジェネラル フュージョン インコーポレイテッド プラズマ磁場を制御するためのシステム及び方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210622A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd プラズマ処理方法及び装置
JPH06251895A (ja) * 1993-02-24 1994-09-09 Sumitomo Metal Ind Ltd 有磁場プラズマ処理装置
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
JP2009277889A (ja) * 2008-05-15 2009-11-26 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理装置の制御方法
US8148977B2 (en) * 2009-01-27 2012-04-03 Applied Materials, Inc. Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system
CN103002649B (zh) * 2011-09-13 2016-09-14 中微半导体设备(上海)有限公司 一种电感耦合式的等离子体处理装置及其基片处理方法
US20140209244A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Skew elimination and control in a plasma enhanced substrate processing chamber
US9257265B2 (en) * 2013-03-15 2016-02-09 Applied Materials, Inc. Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US10170313B2 (en) * 2016-05-02 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a tunable electromagnetic field apparatus to improve doping uniformity
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
US10170287B1 (en) * 2017-10-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
KR20190056521A (ko) * 2017-11-17 2019-05-27 주식회사 조인솔루션 전자석을 구비한 스퍼터링 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003342757A (ja) 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
JP2006237590A (ja) 2005-01-28 2006-09-07 Applied Materials Inc プラズマ均一性およびデバイス損傷減少のためのカスプ、ソレノイドおよびミラー磁場用最小ｄｃコイルを持ったプラズマ反応器
JP2010519710A (ja) 2007-02-26 2010-06-03 ビーコ・インスツルメンツ・インコーポレーテッド イオン源およびイオン源の電磁石を動作させる方法
JP2010056114A (ja) 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2014511567A (ja) 2011-02-16 2014-05-15 マッパー・リソグラフィー・アイピー・ビー．ブイ． 磁気シールド用システム
US20160027613A1 (en) 2014-07-24 2016-01-28 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
JP2017524237A (ja) 2014-08-19 2017-08-24 ジェネラル フュージョン インコーポレイテッド プラズマ磁場を制御するためのシステム及び方法

Also Published As

Publication number Publication date
JP2023541910A (ja) 2023-10-04
CN116171651A (zh) 2023-05-26
KR20230067578A (ko) 2023-05-16
WO2022060562A1 (en) 2022-03-24
US20230260768A1 (en) 2023-08-17

Similar Documents

Publication Publication Date Title
KR101809150B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP5931063B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP5819154B2 (ja) プラズマエッチング装置
US9263237B2 (en) Plasma processing apparatus and method thereof
CN115938906B (zh) 等离子体处理装置
JP2012049376A (ja) プラズマ処理装置およびプラズマ処理方法
JP7742877B2 (ja) 磁場を用いるプラズマ放電の不均一性制御
US12387916B2 (en) Magnetic field control system
CN110770880B (zh) 等离子处理装置
JP6595335B2 (ja) プラズマ処理装置
US12512307B2 (en) Profile twisting control in dielectric etch
KR102891151B1 (ko) 자기를 사용한 에칭 및 플라즈마 균일도 제어
JP7639030B2 (ja) 調節可能な形状トリムコイル
KR102571380B1 (ko) 피처리체를 처리하는 방법
KR100751535B1 (ko) 다중 주파수 유도 코일을 갖는 페라이트 코어를 구비한플라즈마 발생기 및 이를 구비한 플라즈마 처리 장치
CN119366267A (zh) 等离子处理装置以及等离子处理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240829

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240829

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250819

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250902

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250909

R150 Certificate of patent or registration of utility model

Ref document number: 7742877

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150