JP2023541910A5 - - Google Patents

Info

Publication number
JP2023541910A5
JP2023541910A5 JP2023516489A JP2023516489A JP2023541910A5 JP 2023541910 A5 JP2023541910 A5 JP 2023541910A5 JP 2023516489 A JP2023516489 A JP 2023516489A JP 2023516489 A JP2023516489 A JP 2023516489A JP 2023541910 A5 JP2023541910 A5 JP 2023541910A5
Authority
JP
Japan
Prior art keywords
magnetic field
vacuum chamber
magnitude
auxiliary
axial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023516489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023541910A (ja
JP7742877B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/048276 external-priority patent/WO2022060562A1/en
Publication of JP2023541910A publication Critical patent/JP2023541910A/ja
Publication of JP2023541910A5 publication Critical patent/JP2023541910A5/ja
Application granted granted Critical
Publication of JP7742877B2 publication Critical patent/JP7742877B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023516489A 2020-09-18 2021-08-30 磁場を用いるプラズマ放電の不均一性制御 Active JP7742877B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063080513P 2020-09-18 2020-09-18
US63/080,513 2020-09-18
PCT/US2021/048276 WO2022060562A1 (en) 2020-09-18 2021-08-30 Plasma discharge uniformity control using magnetic fields

Publications (3)

Publication Number Publication Date
JP2023541910A JP2023541910A (ja) 2023-10-04
JP2023541910A5 true JP2023541910A5 (https=) 2024-09-06
JP7742877B2 JP7742877B2 (ja) 2025-09-22

Family

ID=80776327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023516489A Active JP7742877B2 (ja) 2020-09-18 2021-08-30 磁場を用いるプラズマ放電の不均一性制御

Country Status (5)

Country Link
US (1) US20230260768A1 (https=)
JP (1) JP7742877B2 (https=)
KR (1) KR20230067578A (https=)
CN (1) CN116171651A (https=)
WO (1) WO2022060562A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12278089B2 (en) 2023-01-31 2025-04-15 Applied Materials, Inc. Plasma uniformity control system and methods
WO2024228931A1 (en) * 2023-05-03 2024-11-07 Lam Research Corporation Systems and methods for achieving uniformity with multiple coils

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210622A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd プラズマ処理方法及び装置
JPH06251895A (ja) * 1993-02-24 1994-09-09 Sumitomo Metal Ind Ltd 有磁場プラズマ処理装置
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
JP2003342757A (ja) 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
WO2008106448A2 (en) 2007-02-26 2008-09-04 Veeco Instruments Inc. Ion sources and methods of operating an electromagnet of an ion source
JP2009277889A (ja) * 2008-05-15 2009-11-26 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理装置の制御方法
JP2010056114A (ja) 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
US8148977B2 (en) * 2009-01-27 2012-04-03 Applied Materials, Inc. Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system
CN103477285A (zh) 2011-02-16 2013-12-25 迈普尔平版印刷Ip有限公司 用于磁屏蔽的系统
CN103002649B (zh) * 2011-09-13 2016-09-14 中微半导体设备(上海)有限公司 一种电感耦合式的等离子体处理装置及其基片处理方法
US20140209244A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Skew elimination and control in a plasma enhanced substrate processing chamber
US9257265B2 (en) * 2013-03-15 2016-02-09 Applied Materials, Inc. Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US9613783B2 (en) 2014-07-24 2017-04-04 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
US9967963B2 (en) 2014-08-19 2018-05-08 General Fusion Inc. System and method for controlling plasma magnetic field
US10170313B2 (en) * 2016-05-02 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a tunable electromagnetic field apparatus to improve doping uniformity
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
US10170287B1 (en) * 2017-10-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
KR20190056521A (ko) * 2017-11-17 2019-05-27 주식회사 조인솔루션 전자석을 구비한 스퍼터링 장치

Similar Documents

Publication Publication Date Title
JP4145248B2 (ja) 永久磁石式磁界発生装置
US6545580B2 (en) Electromagnetic field generator and method of operation
JP2023541910A5 (https=)
TWI364787B (en) Faraday dose and uniformity monitor for plasma based ion implantation
JP2005534150A5 (https=)
NL8701549A (nl) Plasmareactor van het magnetrontype voor hoge-flux plasma-etsen en plasma-depositie.
US8884526B2 (en) Coherent multiple side electromagnets
TW200425312A (en) Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
JP2009027194A5 (https=)
KR102410836B1 (ko) 다이폴 링 자계 발생 장치
JP2010512620A5 (https=)
JPH08508852A (ja) スパッタエッチング制御用のプラズマ成形プラグ
WO2006131670A3 (fr) Dispositif de controle des especes gazeuses par spectrometrie d’emission optique d’un plasma
CN114898966B (zh) 一种基于圆形磁体构型的麦克斯韦组合线圈
JPH0855699A (ja) プラズマ処理装置
BR112013021546B1 (pt) fonte de evaporação do arco
JP7645890B2 (ja) 磁気を使用するエッチングおよびプラズマ均一性の制御
JP4558563B2 (ja) 永久磁石式磁界発生装置
CN101960278B (zh) 氦传感器
JP2573702B2 (ja) プラズマエッチング装置
WO2012018770A3 (en) Control of plasma profile using magnetic null arrangement by auxiliary magnets
US9953808B2 (en) Arc evaporation source
JPH0339676A (ja) 磁場補正装置
KR100456287B1 (ko) 스퍼터링 증착장치의 스퍼터 건
Lee et al. Response to “Comment on ‘Equilibrium potential well due to finite Larmor radius effects at the tokamak edge’”[Phys. Plasmas 25, 054701 (2018)]