CN116171651A - 使用磁场的等离子体放电均匀性控制 - Google Patents

使用磁场的等离子体放电均匀性控制 Download PDF

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Publication number
CN116171651A
CN116171651A CN202180063047.0A CN202180063047A CN116171651A CN 116171651 A CN116171651 A CN 116171651A CN 202180063047 A CN202180063047 A CN 202180063047A CN 116171651 A CN116171651 A CN 116171651A
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CN
China
Prior art keywords
magnetic field
radial
axial
vacuum chamber
supplemental
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180063047.0A
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English (en)
Chinese (zh)
Inventor
西奥多罗斯·帕纳戈普路斯
阿列克谢·M·马拉赫塔诺夫
季兵
安东尼·德拉列拉
约翰·P·霍兰德
彭东羽
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN116171651A publication Critical patent/CN116171651A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202180063047.0A 2020-09-18 2021-08-30 使用磁场的等离子体放电均匀性控制 Pending CN116171651A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063080513P 2020-09-18 2020-09-18
US63/080,513 2020-09-18
PCT/US2021/048276 WO2022060562A1 (en) 2020-09-18 2021-08-30 Plasma discharge uniformity control using magnetic fields

Publications (1)

Publication Number Publication Date
CN116171651A true CN116171651A (zh) 2023-05-26

Family

ID=80776327

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180063047.0A Pending CN116171651A (zh) 2020-09-18 2021-08-30 使用磁场的等离子体放电均匀性控制

Country Status (5)

Country Link
US (1) US20230260768A1 (https=)
JP (1) JP7742877B2 (https=)
KR (1) KR20230067578A (https=)
CN (1) CN116171651A (https=)
WO (1) WO2022060562A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12278089B2 (en) 2023-01-31 2025-04-15 Applied Materials, Inc. Plasma uniformity control system and methods
WO2024228931A1 (en) * 2023-05-03 2024-11-07 Lam Research Corporation Systems and methods for achieving uniformity with multiple coils

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210622A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd プラズマ処理方法及び装置
JPH06251895A (ja) * 1993-02-24 1994-09-09 Sumitomo Metal Ind Ltd 有磁場プラズマ処理装置
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
JP2003342757A (ja) 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
WO2008106448A2 (en) 2007-02-26 2008-09-04 Veeco Instruments Inc. Ion sources and methods of operating an electromagnet of an ion source
JP2009277889A (ja) * 2008-05-15 2009-11-26 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理装置の制御方法
JP2010056114A (ja) 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
US8148977B2 (en) * 2009-01-27 2012-04-03 Applied Materials, Inc. Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system
CN103477285A (zh) 2011-02-16 2013-12-25 迈普尔平版印刷Ip有限公司 用于磁屏蔽的系统
CN103002649B (zh) * 2011-09-13 2016-09-14 中微半导体设备(上海)有限公司 一种电感耦合式的等离子体处理装置及其基片处理方法
US20140209244A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Skew elimination and control in a plasma enhanced substrate processing chamber
US9257265B2 (en) * 2013-03-15 2016-02-09 Applied Materials, Inc. Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US9613783B2 (en) 2014-07-24 2017-04-04 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
US9967963B2 (en) 2014-08-19 2018-05-08 General Fusion Inc. System and method for controlling plasma magnetic field
US10170313B2 (en) * 2016-05-02 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a tunable electromagnetic field apparatus to improve doping uniformity
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
US10170287B1 (en) * 2017-10-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
KR20190056521A (ko) * 2017-11-17 2019-05-27 주식회사 조인솔루션 전자석을 구비한 스퍼터링 장치

Also Published As

Publication number Publication date
JP2023541910A (ja) 2023-10-04
KR20230067578A (ko) 2023-05-16
JP7742877B2 (ja) 2025-09-22
WO2022060562A1 (en) 2022-03-24
US20230260768A1 (en) 2023-08-17

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