KR20230067578A - 자기장을 사용한 플라즈마 방전 균일도 제어 - Google Patents

자기장을 사용한 플라즈마 방전 균일도 제어 Download PDF

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Publication number
KR20230067578A
KR20230067578A KR1020227045630A KR20227045630A KR20230067578A KR 20230067578 A KR20230067578 A KR 20230067578A KR 1020227045630 A KR1020227045630 A KR 1020227045630A KR 20227045630 A KR20227045630 A KR 20227045630A KR 20230067578 A KR20230067578 A KR 20230067578A
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KR
South Korea
Prior art keywords
magnetic field
radial
axial
magnitude
supplemental
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020227045630A
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English (en)
Korean (ko)
Inventor
테오도로스 파나고파울로스
알렉세이 엠. 마라크타노브
빙 지
앤서니 데 라 예라
존 피. 홀랜드
동 우 팽
Original Assignee
램 리써치 코포레이션
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Publication of KR20230067578A publication Critical patent/KR20230067578A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020227045630A 2020-09-18 2021-08-30 자기장을 사용한 플라즈마 방전 균일도 제어 Pending KR20230067578A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063080513P 2020-09-18 2020-09-18
US63/080,513 2020-09-18
PCT/US2021/048276 WO2022060562A1 (en) 2020-09-18 2021-08-30 Plasma discharge uniformity control using magnetic fields

Publications (1)

Publication Number Publication Date
KR20230067578A true KR20230067578A (ko) 2023-05-16

Family

ID=80776327

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227045630A Pending KR20230067578A (ko) 2020-09-18 2021-08-30 자기장을 사용한 플라즈마 방전 균일도 제어

Country Status (5)

Country Link
US (1) US20230260768A1 (https=)
JP (1) JP7742877B2 (https=)
KR (1) KR20230067578A (https=)
CN (1) CN116171651A (https=)
WO (1) WO2022060562A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12278089B2 (en) 2023-01-31 2025-04-15 Applied Materials, Inc. Plasma uniformity control system and methods
WO2024228931A1 (en) * 2023-05-03 2024-11-07 Lam Research Corporation Systems and methods for achieving uniformity with multiple coils

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62210622A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd プラズマ処理方法及び装置
JPH06251895A (ja) * 1993-02-24 1994-09-09 Sumitomo Metal Ind Ltd 有磁場プラズマ処理装置
US6341574B1 (en) * 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
JP2003342757A (ja) 2002-05-28 2003-12-03 Canon Inc ミリング方法およびミリング装置
WO2008106448A2 (en) 2007-02-26 2008-09-04 Veeco Instruments Inc. Ion sources and methods of operating an electromagnet of an ion source
JP2009277889A (ja) * 2008-05-15 2009-11-26 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理装置の制御方法
JP2010056114A (ja) 2008-08-26 2010-03-11 Hitachi High-Technologies Corp プラズマ処理装置
US8148977B2 (en) * 2009-01-27 2012-04-03 Applied Materials, Inc. Apparatus for characterizing a magnetic field in a magnetically enhanced substrate processing system
CN103477285A (zh) 2011-02-16 2013-12-25 迈普尔平版印刷Ip有限公司 用于磁屏蔽的系统
CN103002649B (zh) * 2011-09-13 2016-09-14 中微半导体设备(上海)有限公司 一种电感耦合式的等离子体处理装置及其基片处理方法
US20140209244A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Skew elimination and control in a plasma enhanced substrate processing chamber
US9257265B2 (en) * 2013-03-15 2016-02-09 Applied Materials, Inc. Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor
US9613783B2 (en) 2014-07-24 2017-04-04 Applied Materials, Inc. Method and apparatus for controlling a magnetic field in a plasma chamber
US9967963B2 (en) 2014-08-19 2018-05-08 General Fusion Inc. System and method for controlling plasma magnetic field
US10170313B2 (en) * 2016-05-02 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a tunable electromagnetic field apparatus to improve doping uniformity
US11322338B2 (en) * 2017-08-31 2022-05-03 Taiwan Semiconductor Manufacturing Co., Ltd. Sputter target magnet
US10170287B1 (en) * 2017-10-16 2019-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Techniques for detecting micro-arcing occurring inside a semiconductor processing chamber
KR20190056521A (ko) * 2017-11-17 2019-05-27 주식회사 조인솔루션 전자석을 구비한 스퍼터링 장치

Also Published As

Publication number Publication date
JP2023541910A (ja) 2023-10-04
CN116171651A (zh) 2023-05-26
JP7742877B2 (ja) 2025-09-22
WO2022060562A1 (en) 2022-03-24
US20230260768A1 (en) 2023-08-17

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