JP7740990B2 - 撮像装置および撮像装置の製造方法 - Google Patents

撮像装置および撮像装置の製造方法

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Publication number
JP7740990B2
JP7740990B2 JP2021562471A JP2021562471A JP7740990B2 JP 7740990 B2 JP7740990 B2 JP 7740990B2 JP 2021562471 A JP2021562471 A JP 2021562471A JP 2021562471 A JP2021562471 A JP 2021562471A JP 7740990 B2 JP7740990 B2 JP 7740990B2
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Japan
Prior art keywords
imaging
imaging element
imaging device
light
disposed
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Active
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JP2021562471A
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English (en)
Japanese (ja)
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JPWO2021111715A1 (https=
Inventor
昌也 長田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of JPWO2021111715A1 publication Critical patent/JPWO2021111715A1/ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • H10W70/652Cross-sectional shapes
    • H10W70/6528Cross-sectional shapes of the portions that connect to chips, wafers or package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/255Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2021562471A 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法 Active JP7740990B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019219543 2019-12-04
JP2019219543 2019-12-04
PCT/JP2020/037159 WO2021111715A1 (ja) 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021111715A1 JPWO2021111715A1 (https=) 2021-06-10
JP7740990B2 true JP7740990B2 (ja) 2025-09-17

Family

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Application Number Title Priority Date Filing Date
JP2021562471A Active JP7740990B2 (ja) 2019-12-04 2020-09-30 撮像装置および撮像装置の製造方法

Country Status (4)

Country Link
US (1) US12356753B2 (https=)
EP (1) EP4071795B1 (https=)
JP (1) JP7740990B2 (https=)
WO (1) WO2021111715A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025158775A1 (ja) * 2024-01-24 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 半導体パッケージ、半導体装置、および、半導体パッケージの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016129409A1 (ja) 2015-02-13 2016-08-18 ソニー株式会社 撮像素子、製造方法、および電子機器

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JPH0226080A (ja) * 1988-07-14 1990-01-29 Olympus Optical Co Ltd 半導体素子
JPH0321859A (ja) * 1989-06-20 1991-01-30 Nippondenso Co Ltd 酸素センサー
JPH085566Y2 (ja) * 1989-07-12 1996-02-14 オリンパス光学工業株式会社 固体撮像装置
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
TWI662670B (zh) * 2013-08-30 2019-06-11 Xintec Inc. 電子元件封裝體及其製造方法
CN106033753B (zh) * 2015-03-12 2019-07-12 恒劲科技股份有限公司 封装模块及其基板结构
US10763286B2 (en) * 2015-07-23 2020-09-01 Sony Corporation Semiconductor device, manufacturing method thereof, and electronic apparatus
KR102563860B1 (ko) 2015-12-02 2023-08-03 마이크로 모듈 테크놀로지 가부시키가이샤 광학 장치 및 광학 장치의 제조 방법
CN106571377A (zh) 2016-09-20 2017-04-19 苏州科阳光电科技有限公司 图像传感器模组及其制作方法
US10424540B2 (en) * 2016-10-06 2019-09-24 Xintec Inc. Chip package and method for forming the same
JP2018078274A (ja) 2016-11-10 2018-05-17 サムソン エレクトロ−メカニックス カンパニーリミテッド. イメージセンサー装置及びそれを含むイメージセンサーモジュール
KR102605618B1 (ko) * 2016-11-14 2023-11-23 삼성전자주식회사 이미지 센서 패키지
US12356737B2 (en) 2019-12-04 2025-07-08 Sony Semisconductor Solutions Corporation Imaging apparatus and manufacturing method of the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016129409A1 (ja) 2015-02-13 2016-08-18 ソニー株式会社 撮像素子、製造方法、および電子機器

Also Published As

Publication number Publication date
US20220415953A1 (en) 2022-12-29
JPWO2021111715A1 (https=) 2021-06-10
EP4071795A4 (en) 2023-01-11
US12356753B2 (en) 2025-07-08
EP4071795B1 (en) 2026-04-29
WO2021111715A1 (ja) 2021-06-10
EP4071795A1 (en) 2022-10-12

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