JP7731699B2 - ステージ装置、露光装置、及び物品の製造方法 - Google Patents

ステージ装置、露光装置、及び物品の製造方法

Info

Publication number
JP7731699B2
JP7731699B2 JP2021096623A JP2021096623A JP7731699B2 JP 7731699 B2 JP7731699 B2 JP 7731699B2 JP 2021096623 A JP2021096623 A JP 2021096623A JP 2021096623 A JP2021096623 A JP 2021096623A JP 7731699 B2 JP7731699 B2 JP 7731699B2
Authority
JP
Japan
Prior art keywords
stage
wavelength
measurement
measurement light
atmospheric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021096623A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022188520A5 (https=
JP2022188520A (ja
Inventor
祐司 小杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021096623A priority Critical patent/JP7731699B2/ja
Priority to KR1020220061730A priority patent/KR102910937B1/ko
Priority to CN202210626974.5A priority patent/CN115453824A/zh
Publication of JP2022188520A publication Critical patent/JP2022188520A/ja
Publication of JP2022188520A5 publication Critical patent/JP2022188520A5/ja
Application granted granted Critical
Publication of JP7731699B2 publication Critical patent/JP7731699B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
JP2021096623A 2021-06-09 2021-06-09 ステージ装置、露光装置、及び物品の製造方法 Active JP7731699B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021096623A JP7731699B2 (ja) 2021-06-09 2021-06-09 ステージ装置、露光装置、及び物品の製造方法
KR1020220061730A KR102910937B1 (ko) 2021-06-09 2022-05-20 스테이지 장치, 노광 장치, 및 물품의 제조 방법
CN202210626974.5A CN115453824A (zh) 2021-06-09 2022-06-06 载置台装置、曝光装置以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021096623A JP7731699B2 (ja) 2021-06-09 2021-06-09 ステージ装置、露光装置、及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2022188520A JP2022188520A (ja) 2022-12-21
JP2022188520A5 JP2022188520A5 (https=) 2024-06-07
JP7731699B2 true JP7731699B2 (ja) 2025-09-01

Family

ID=84296878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021096623A Active JP7731699B2 (ja) 2021-06-09 2021-06-09 ステージ装置、露光装置、及び物品の製造方法

Country Status (3)

Country Link
JP (1) JP7731699B2 (https=)
KR (1) KR102910937B1 (https=)
CN (1) CN115453824A (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238933A (ja) 2009-03-31 2010-10-21 Advanced Mask Inspection Technology Kk Ｘｙステージ装置
US20150013427A1 (en) 2013-07-10 2015-01-15 Carl Zeiss Sms Gmbh Method for calibrating a position-measuring system and position-measuring system
CN110553591A (zh) 2018-05-31 2019-12-10 上海微电子装备（集团）股份有限公司 一种位移测量系统和光刻机
JP2021012273A (ja) 2019-07-05 2021-02-04 キヤノン株式会社 測定装置、ステージ位置決め装置、露光装置、物品の製造方法及びコンピュータプログラム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03134503A (ja) * 1989-10-20 1991-06-07 Hitachi Ltd レーザ測長器及びそれにおける空気のゆらぎの補正方法
KR200211355Y1 (ko) * 1998-06-30 2001-04-02 김영환 스테이지 간섭계
US6417927B2 (en) 1999-04-28 2002-07-09 Zygo Corporation Method and apparatus for accurately compensating both long and short term fluctuations in the refractive index of air in an interferometer
JP2000331904A (ja) * 1999-05-17 2000-11-30 Canon Inc 露光装置およびデバイス製造方法
JP2003065712A (ja) * 2001-08-21 2003-03-05 Canon Inc レーザ干渉計測長器、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
US6842256B2 (en) * 2001-11-15 2005-01-11 Zygo Corporation Compensating for effects of variations in gas refractivity in interferometers
KR100578140B1 (ko) * 2004-10-07 2006-05-10 삼성전자주식회사 변위 측정을 위한 간섭계 시스템 및 이를 이용한 노광 장치
US7826063B2 (en) * 2005-04-29 2010-11-02 Zygo Corporation Compensation of effects of atmospheric perturbations in optical metrology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238933A (ja) 2009-03-31 2010-10-21 Advanced Mask Inspection Technology Kk Ｘｙステージ装置
US20150013427A1 (en) 2013-07-10 2015-01-15 Carl Zeiss Sms Gmbh Method for calibrating a position-measuring system and position-measuring system
CN110553591A (zh) 2018-05-31 2019-12-10 上海微电子装备（集团）股份有限公司 一种位移测量系统和光刻机
JP2021012273A (ja) 2019-07-05 2021-02-04 キヤノン株式会社 測定装置、ステージ位置決め装置、露光装置、物品の製造方法及びコンピュータプログラム

Also Published As

Publication number Publication date
KR102910937B1 (ko) 2026-01-12
CN115453824A (zh) 2022-12-09
KR20220166186A (ko) 2022-12-16
JP2022188520A (ja) 2022-12-21

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